Abstract: A semiconductor device 100 includes a silicon substrate 102, an N-type MOSFET 118 including a first high dielectric constant film 111 and a polycrystalline silicon film 114 on the silicon substrate 102, and a P-type MOSFET 120 including a second high dielectric constant film 12 and a polycrystalline silicon film 114 juxtaposed to N-type MOSFET 118 on the silicon substrate 102. The second high dielectric constant film 112 is formed to have the film thickness thinner than the film thickness of the first high dielectric constant film 111. The first high dielectric constant film 111 and the second high dielectric constant film 112 contains one or more element(s) selected from Hf and Zr.

Abstract: The real number counter subtracts the positive integer C if the count value RC is equal to or larger than 0, or adds (the positive integer B-C) and outputs a Carry if the count value RC is negative. The first integer counter for generating the first clock f1 calculates (the count value IC1+the Carry+the positive integer A). The second integer counter 150 for generating the second clock f2 (f2=f1*G) calculates (the count value IC2+the Carry+the positive integer A+the offset value) at each input clock. The correction circuit outputs the offset value so that the second integer counter counts “the maximum count value*(f2/f1?1)*D” times more than the first integer counter with respect to each cycle D having a synchronization cycle length of the first clock f1 and the second clock f2.

Abstract: An insulating layer 12 is formed as a surface layer of electronic circuit chip 10. A conductor interconnect 14 is formed in the insulating layer 12. The conductor interconnect 14 is exposed in the surface of the insulating layer 12. A solder wetting metallic film 16 (a metallic film) is formed on a portion of the conductor interconnect 14 to be exposed in the surface of the insulating layer 12. Typical metallic material (second metallic material) available for composing the solder wetting metallic film 16 includes a material that requires higher free energy for forming an oxide thereof, as compared with a free energy required for forming an oxide of the metallic material composing the conductor interconnect 14.

Abstract: A method is provided for driving a display device including first to p-th pixels associated with different colors with p being integers equal to or more than three. The method is composed of a step of time-divisionally driving the first to p-th pixels. In the time-divisionally driving, the pixel associated with the color exhibiting the lowest spectral luminous efficacy among the colors is firstly driven.

Abstract: A clock switching circuit comprises PLL circuits into which external clocks CLKT, CLKB are respectively input, a multiplexer for selecting and outputting either an output PLB of one PLL circuit or an inverted signal of an output PLT of the other PLL circuit, and a clock control circuit for subjecting the multiplexer to switching control on the basis of a Lock determination signal that is asynchronous with CLKB and PLB. When the Lock determination signal is input into the clock control circuit, the clock control circuit switches the output of the multiplexer in synchronization with an offset clock PLQB that is offset from the phase of PLB by a predetermined value.

Abstract: A semiconductor wafer 1 has first scribe lines 31 in two mutually perpendicular directions which have a first width and divide the semiconductor wafer 1 into a plurality of areas; second scribe lines 32 which have a second width smaller than the first width and divide the area into a plurality of semiconductor chip areas 2; an electrode pad 5 formed along the edge of the semiconductor chip area 2; and a metal-containing accessory pattern 4 disposed in the scribe lines. In the second scribe lines 32, the accessory pattern 4 is absent in at least the outermost surface in an area adjacent to the edge having the electrode pad 5 in the chip area 2.

Abstract: A multiphase clock with high resolution is generated. A first clock generator circuit (120) includes n level converters BUFs that conduct level conversion on two input signals, and generate a pair of pulse signals that switch the levels with reference to a crossing point at which the two signal are identical in level with each other. An i-th BUF in the first clock generator circuit (120) inputs a one-side output pair that is respective one-side outputs of the differential outputs of two i-th (1?i?n) and (i+1)-th (1 when i=n) differential circuits in a ring oscillator 110 in which n differential circuits DCELs having differential inputs and outputs are connected in a ring configuration. The one-side output pair is two one-side outputs that are input to the noninverting terminal of the next differential circuit, or the two one-side outputs that are input to the inverting terminal of the next differential circuit.

Abstract: Aimed at stably forming sheared surfaces of leads of semiconductor devices, and at raising ratio of formation of plated layers onto the sheared surfaces of the leads, a lead cutter has a die 106, and a cutting punch 110 having a cutting edge at least on the surface facing the die, wherein clearance T between the die 106 and the cutting punch 110 is set within the range from not smaller than 2.3% and smaller than 14.0% of the total thickness of the leads to be cut and plated layers formed on the upper and the lower surfaces thereof.

Abstract: In conventional semiconductor devices, an insufficient supply of the resin to the end portions of the components that should be encapsulated is caused, resulting in an insufficient permeation of the resin into gaps between the components and the substrate, causing a spreading resin-wet. A semiconductor device 1 includes a mounting interconnect substrate 10, a semiconductor chip 20 mounted on the mounting interconnect substrate 10, an underfill resin 30 provided in a gap between the mounting interconnect substrate 10 and the semiconductor chip 20 and a flow-inducing section 40 provided in vicinity of the semiconductor chip 20 on the mounting interconnect substrate 10 and being capable of inducing a flow of the underfill resin 30 to the gap.

Abstract: A semiconductor device includes a plurality of wiring patterns arranged in a first wiring layer of the semiconductor device and extending in a first direction, and a plurality of dummy patterns arranged in the first wiring layer and extending in a second direction different from the first direction, wherein each of the plurality of dummy patterns is arranged spaced apart from each of the plurality of wiring patterns and includes one or more dummy lands formed by separating a part of the dummy pattern opposed to the wiring pattern, from the rest part of the dummy pattern.

Abstract: There is provided a current detection circuit capable of preventing an excessive voltage from being applied to an input terminal of a differential amplifier, without resulting in reduction in current detection accuracy. The current detection circuit includes a power MOSFET 1 (a first semiconductor switching device), a sense MOSFET 2 (a second semiconductor switching device), a differential amplifier 3, a Zener diode 33 (a first voltage clamp device), a Zener diode 34 (a second voltage clamp device), an MOSFET 6 (a variable resistance device), a depletion type MOSFET 31 (a first MOSFET), and a depletion type MOSFET 32 (a second MOSFET).

Abstract: Aiming at adjusting the height of bump electrodes connected to lands on a substrate, a semiconductor device 100 has a first interconnect substrate 103 and a second interconnect substrate 101. On one surface of these substrates, first lands 111 and second lands 113 are provided. The plane geometry of the second lands 113 is a polygon characterized by the inscribed circle thereof having an area smaller than the area of the inscribed circle of the first land.

Abstract: According to an aspect of the invention, there is provided a drive circuit for driving a capacitive load. The drive circuit comprises an amplification circuit for amplifying an input signal and outputting the amplified signal to the capacitive load and an operation state detection circuit for detecting an operation state of output operation to the capacitive load in the amplification circuit. A variable resistor is connected between the amplification circuit and the capacitive load and changes the resistance value according to the detected operation state.

Abstract: An intermittent driving system includes a control target circuit to determine and notify a switching timing of ON/OFF of a power supply, and a control circuit to send a power supply ON signal for turning on the power supply or a power supply OFF signal for turning off the power supply of the control target circuit based on the switching timing decided by the control target circuit. The control target circuit is an in-vehicle monitoring circuit including a monitoring camera to monitor a in-vehicle and the control target circuit determines the switching timing based on a monitoring result of the monitoring camera.

Abstract: A semiconductor device including: a semiconductor member having thereon a plurality of interconnect pads: and a mounting member having a plurality of electrode terminals electrically and mechanically connected to the respective interconnect pads for mounting the semiconductor chip on the mounting member, the electrode terminals forming a plurality of I/O cells each having part of the electrode terminals, the part of electrode terminals including signal terminals, the I/O cells forming a first group of the I/O cells and a second group of I/O cells disposed on an inner position of the mounting member with respect to the first group. The higher integration of the semiconductor device having the higher performances can be realized because the interconnect lines can be drawn to the outer periphery of the chip from the interconnect pads corresponding to each of the I/O cells when the chip is miniaturized or the number of the ball electrodes is increased.

Abstract: A semiconductor device has: a pull-up circuit connectable to an internal terminal; a pull-down circuit connectable to the internal terminal; and an operation mode switch circuit. The operation mode switch circuit switches an operation mode based on a potential of the internal terminal when the pull-up circuit is connected to the internal terminal and a potential of the internal terminal when the pull-down circuit is connected to the internal terminal.

Abstract: A splitter circuit improves isolation between output ports. The splitter circuit comprises input port 1, output port 2, output port 3, FET 6, FET 11 and an impedance circuit. FET 6 is provided between input port 1 and output port 2 and adapted to amplify a signal at input port 1 to output an amplified signal to output port 2. FET 11 is provided between the input port 1 and the output port 3 and adapted to amplify a signal at input port 1 to output an amplified signal to the output port 3. The impedance circuit couples the output ports 2 and 3, and includes a first series circuit including inductor 15 and diode 17, series connected to each other, a second series circuit including inductor 16 and diode 18, series connected to each other, and resistor 19. The first series circuit has one end connected to output port 2 and the second series circuit has one end connected to output port 3. The resistor is connected between the other ends of the first and second series circuits and the ground.

Abstract: The high-frequency IC according to an embodiment of the invention includes a mixer down-converting the RF signal into an IF signal with a given center frequency lower than that of the RF signal, a first-order low-pass filter with a pass band set narrower than a bandwidth of the IF signal down-converted by the mixer, and an active low-pass filter removing a signal outside the bandwidth of the IF signal.

Abstract: There is provided a PLL circuit 15, a voltage follower 19, and an output terminal 23, and a control voltage V1 of a voltage controlled oscillator circuit in the PLL circuit 15 is outputted to the output terminal 23 via the voltage follower 19.

Abstract: A semiconductor device includes a first copper-containing conductive film formed on a substrate, insulating films formed on the first copper-containing conductive film with a concave portion reaching the first copper-containing conductive film, a second barrier insulating film formed to cover the side wall of the concave portion of these insulating films, a second adhesive alloy film made of copper and a dissimilar element other than copper, and coming in contact with the first copper-containing conductive film at the bottom surface of the concave portion and in contact with the second barrier insulating film at the side wall of the concave portion to cover the inside wall of the concave portion, and a second copper-containing conductive film containing copper as a main component, and formed on the second adhesive alloy film in contact with the second adhesive alloy film to fill the concave portion.