Abstract: A method for manufacturing a semiconductor device includes cutting a resin sealing body into a plurality of pieces. The resin sealing body includes a plurality of semiconductor chips mounted on a wiring board, a heat spreader disposed above the plurality of the semiconductor chips, and sealing resin filled between the wiring board and the heat spreader. The cutting the resin sealing body includes shaving the resin sealing body from a side of the heat spreader and shaving the resin sealing body from a side of the wiring board. The method prevents the heat spreader from generation of burrs.

Abstract: To provide a semiconductor device in which an interval between first wells can be shortened by improving a separation breakdown voltage between the first wells and a method for manufacturing the same.

Abstract: According to an embodiment of the present invention, an interrupt control circuit that controls a plurality of interrupt requests for interrupt handling executed by a processor, includes: an interrupt control module unit as a detecting unit determining whether or not there is an interrupt request masked with interrupt handling executed by a processor during the interrupt handling; and an interrupt control circuit including a priority mask flag indicating whether or not there is the interrupt request. With such configuration, it is possible to simply determine whether or not there is another masked interrupt request.

Abstract: A non-volatile storage element 100 has a silicon substrate 102, a first memory region 106a composed of a first lower silicon oxide film 108a, a first silicon nitride film 110a, and a first upper layer silicon oxide film 112a provided in this order, a second memory region 106b composed of a second lower layer silicon oxide film 108b, a second silicon nitride film 110b, and a second upper layer silicon oxide film 112b provided in this order, and a first control gate 114 and a second control gate 116 arranged on the first memory region 106a and the second control gate 116, respectively, on the silicon substrate 102. The silicon nitride film 110 is provided so as to be horizontal in a direction within a substrate plane.

Abstract: Disclosed herewith is a semiconductor device, which includes a semiconductor chip; a lead device that includes an island for mounting the semiconductor chip and having an area smaller than that of the semiconductor chip at its contact surface, as well as plural hanging leads for supporting the island and coming in contact partially with the semiconductor chip; a mounting material provided on a contact surface between each of the island and hanging leads and the semiconductor chip so as to adhere the semiconductor chip to the island and the hanging leads; and sealing resin for sealing the semiconductor chip. The modulus of elasticity of the mounting material is lower than that of the sealing resin. The mounting material is further coated on the back surfaces of the contact surfaces of the island and the hanging leads.

Abstract: When a multi-layer structure is formed by forming the interconnect trenches or via holes having different patterns in a plurality of insulating films, an anti-reflective film and an upper resist film are stacked in this order over an insulating interlayer, and the anti-reflective film is etched through the upper resist film used as a mask, wherein the anti-reflective film is etched while varying a value of at least one etching condition correlative to ?(L2?L1), expressing dimensional shift of width L2 of opening of the recess formed in the insulating film, with respect to width L1 of opening of the upper resist film, so as to reduce the dimensional shift ?(L2?L1) as the aperture ratio of the opening to be formed in the upper resist film increases, depending on the aperture ratio.

Abstract: A device and a method that improve decoding characteristics of an LDPC decoder to which SPA where the equation for the computation of messages is approximated and the number of messages are reduced is applied. A received LDPC code is decoded by repeating the passing of messages between a plurality of check nodes and a plurality of bit nodes corresponding to a check matrix, and messages sent from one of the check nodes to one of the bit nodes out of messages sent from the one of bit nodes to the one of check nodes are weighted at the one of bit nodes so that the longer ago the messages are computed at the one of check nodes, the less influential they become.

Abstract: An electronic device substrate is formed of a thin-plate reinforcing substrate; an external connection wiring layer stacked on the reinforcing substrate, and comprising an electrical insulation provided on the reinforcing substrate, an opening formed in the electrical insulation, a first conductor pattern and a via-hole conductor provided in the opening and formed integrally with each other; and a second conductor pattern formed on the opposite side of the electrical insulation to the reinforcing substrate, and at least partially electrically connected to the via-hole conductor.

Abstract: A semiconductor device has a semiconductor substrate, a multi-layered wiring construction formed over the semiconductor device, and a metal-insulator-metal (MIM) capacitor arrangement established in the multi-layered wiring construction. The MIM capacitor arrangement includes first, second, third, fourth, fifth, and sixth electrode structures, which are arranged in order in parallel with each other at regular intervals. The first, second, fifth and sixth electrode structures are electrically connected to each other so as to define a first capacitor, and the third and fourth electrode structures are electrically connected to each other so as to define a second capacitor.

Abstract: A MOSFET has a base layer and a source layer in a cell surrounded by a trench gate formed in a semiconductor substrate. A trench contact is formed through the source layer and the base layer. The gate is polygonal such as square. The trench contact is thin and linear so as to increase embedding characteristics. Further, the trench contact is ring or cross shaped so as to reduce a source length.

Abstract: An epitaxial layer is formed on an n+ semiconductor substrate by epitaxial growth. A gate trench is formed to the surface of gate trench so that the bottom of gate trench reaches middle of the epitaxial layer. A gate insulator is formed on the inner wall of gate trench and a polysilicon is formed in the gate trench with the gate insulator interposed therebetween. An HTO film is formed on the surface of the polysilicon and the n? epitaxial layer. At this time, an ion plantation is performed to the epitaxial layer through the HTO film. Hence, a p diffused base layer, an n+ diffused source layer, an n+ diffused source layer is formed. A CVD oxide film is formed on the HTO film. After a BPSG having flowability is deposited on the CVD oxide film, the BPSG film is planarized with a heat treatment of 900-1100 degree Celsius.

Abstract: A data processing apparatus includes a memory, an error detection circuit, a timing adjustment circuit and a terminal. The error detection circuit detects an error based on an output of the memory to output an error detection signal. The timing adjustment circuit enlarges a pulse width of a pulse signal which is generated at first after a start of a predetermined operation among pulse signals included in the error detection signal. The terminal outputs an output of the timing adjustment circuit when a test for the memory is performed. It is possible to report an occurrence of an error reliably without increasing the number of output terminals, test patterns or test time.

Abstract: A positioning method includes performing a first positioning by carrying out information communication with an external part of an positioning apparatus to obtain a first information indicating a position of an object to which the method is applied, displaying a first map representing the position of the object indicated by the first information, performing a second positioning by carrying out information communication with an external part of the positioning apparatus before displaying the first map to obtain a second information indicating the position of the object more precisely than the first information, and displaying a second map representing the position of the positioning apparatus indicated by the second information without responding to another instruction from the user of the positioning after the displaying the first map.

Abstract: A circuit design program product to cause a computer to execute a circuit design process based on a test point insertion, includes: a step for making reference to a netlist to extract a plurality of equivalent faults fj; a step for searching a number n(fj) of test point required for a number of the equivalent fault keeping equivalent relation with a search object equivalent fault fj with each of a plurality of equivalent faults as the search object equivalent fault to become a predetermined number and a insertion position G(fj); a step for calculating probability p(fj) of a single stuck-at fault being included in a set of equivalent faults including at least a search object equivalent fault fj at an occasion when the relevant stuck-at fault takes place in the circuit; a step for calculating a parameter e(fj) derived by an equation: e(fj)=p(fj)/n(fj) on each pattern of an insertion position G(fj); and a step for determining the insertion position G(fmax) giving the maximum value among the calculated parameters

Abstract: The present invention provides a method and a circuit for driving a color liquid crystal display in a normal driving mode and a power saving mode, wherein in the normal driving mode, voltages corresponding to image display data are applied to data electrodes of the color liquid crystal display, and wherein in the power saving mode, voltages corresponding to highly significant bit signals of the image display data are applied as display data signals to the data electrodes.

Abstract: A semiconductor device includes a substrate, a metal layer, an alloy layer and a Sn—Ag—Cu-based solder ball. The metal layer is configured to be formed on the substrate. The alloy layer is configured to be formed on the metal layer. The Sn—Ag—Cu-based solder ball is configured to be placed on the alloy layer. The alloy layer includes Ni and Zn as essential elements.

Abstract: Inspection wire is formed along at least a portion of the outer periphery of, and preferably along the entire perimeter of, a chip area enclosed by scribe areas, using an arbitrary wiring layer, conductive material, or diffusion layer of the semiconductor chip, and the opposite ends of the inspection wire are connected, via a wiring layer and contact plugs, to pads on the semiconductor chip, either directly or via prescribed switching means. By measuring the resistance of the inspection wire before and after dicing using the pads, chips and cracks occurring during dicing of the semiconductor chip, as well as chipping which progresses in subsequent packaging and assembly processes, or due to the application of stress, shocks, thermal cycles or similar after incorporation into products, can be detected.

Abstract: To improve a depletion transistor provided between a control terminal of an output transistor and an output terminal coupled to a load not to enter a conductive state when the output transistor is in the conductive state. The output transistor is served as a source follower. Control voltages which controlling the conductive state/nonconductive state of the depletion transistor are supplied to both a control terminal (gate) and a substrate terminal (back gate) of the depletion transistor.

Abstract: The semiconductor device according to an aspect of the invention includes: an internal circuit area having an internal circuit; an I/O circuit area positioned outside the internal circuit area; and an electrode pad placed across an outer edge of the I/O circuit area. In the electrode pad, an area outside the outer edge of the I/O circuit area is a bonding area, and an area inside the outer edge is a probe area.

Abstract: There are provided with a wiring structure and a method for manufacturing the same wherein in a wiring structure of multi-layered wiring in which a metal wiring is formed on a substrate forming a semiconductor element thereby obtaining connection of the element, no damage to insulation property between the abutting wirings by occurrence of leakage current and no deterioration of insulation resistance property between the abutting wirings are achieved in case that fine metal wiring is formed in a porous insulation film. The insulation barrier layer 413 is formed between an interlayer insulation film and the metal wiring, in the metal wiring structure on the substrate forming the semiconductor element. The insulation barrier layer enables to reduce leakage current between the abutting wirings and to elevate the insulation credibility.