Abstract: A resistance wiring and a judgement circuit for judging a potential in a middle of a path of the resistance wiring are provided on a periphery of a semiconductor chip. One end of the resistance wiring is connected to a power supply and the other end thereof is grounded. Connection points of the resistance wiring to the power supply and the ground are disposed at a corner on the periphery of the semiconductor chip, while a connection point of the resistance wiring to the judgement circuit is disposed at a corner diagonal to the corner on the periphery. When breakages such as chipping and peeling of an interlayer insulating film is caused on the periphery, resistance of the resistance wiring changes.

Abstract: Provided is a multiphase clock generation circuit (1) including: a phase-locked loop circuit (10) for generating multiphase clock signals based on a reference clock signal; a frequency profile holding circuit (20) for holding a frequency profile of each of the multiphase clock signals, starting output of the frequency profile in response to a start signal, and for updating the frequency profile with a predetermined cycle based on the reference clock signal; and a clock selection circuit (30) for selecting a clock signal with an arbitrary phase from among the multiphase clock signals based on the frequency profile, and for feeding back the selected clock signal to the phase-locked loop circuit (10).

Abstract: A nonvolatile memory semiconductor device and a method for manufacturing thereof are provided to avoid deterioration of the tunnel insulating film to increase frequency of writing data on the nonvolatile memory semiconductor device and erasing thereof. Concentration of atomic nitrogen in a tunnel insulating film 151 of a nonvolatile memory semiconductor device 1 is 0.1 to 5 atomic %. In addition, larger amount of atomic nitrogen in the tunnel insulating film 151 is distributed primarily in the interface layer of the tunnel insulating film 151, and concentration of atomic nitrogen in the interface layer is 10 times or more higher than concentration of atomic nitrogen in other portion of the tunnel insulating film 151. Further, density per unit area of atomic nitrogen in the surface of the tunnel insulating film 151 contacting with the floating gate is equal to or lower than 4×1014 atoms/cm2.

Abstract: Disclosed is a differential amplifier which comprises a differential pair comprising depletion-type first and second N-channel MOS transistors, a first current source that supplies a current for the differential pair, a current mirror circuit formed by transistor pairs connected in cascode fashion in two stages, for connecting an output pair of the differential pair in folded connection, second and third current sources connected to an input terminal of the current mirror circuit and an output terminal of the current circuit, respectively, and a buffer amplifier with that has an input terminal connected to the output terminal of the current mirror circuit and has an output terminal connected to an output terminal of the differential amplifier.

Abstract: A sense amplifier comprises: a differential amplifier circuit configured to generate an amplified signal depending on a difference in voltage between bit lines; an output circuit receiving the amplified signal; and a load. The differential amplifier circuit comprises: a first output node supplying the amplified signal to the output circuit; and a second output node symmetrically placed with respect to the first output node and connected to the load. The output circuit comprises an output terminal for outputting an output signal generated based on the amplified signal.

Abstract: In a method of manufacturing a semiconductor device, a substrate having first electrodes on a main surface thereof and a semiconductor chip having second electrodes on a first main surface thereof are arranged such that the main surface of the substrate and the first main surface of the semiconductor chip oppose to each other, and the first electrodes and the second electrodes are connected so as to electrically connect the substrate and the semiconductor chip. The semiconductor chip is made thin by grinding a second main surface opposing to the first main surface of the semiconductor chip which is connected with the substrate. Side surfaces and the second main surface of the semiconductor chip made thin are sealed with resin.

Abstract: An array type processor comprises a data path unit to execute processing, and a state management unit to control the state of the data path unit in accordance with a command that specifies processing on the data. An input DMA circuit reads from a memory information and data to be processed including a command corresponding to the data. The input DMA circuit first transfers the command to the state management unit, and then transfers the data to be processed to the data path unit.

Abstract: In a method for manufacturing a semiconductor device, insulation resistance of the porous film is stabilized, and leakage current between adjacent interconnects provides an improved reliability in signal propagation therethrough. The method includes: sequentially forming over a semiconductor substrate a porous film and a patterned resist film; forming a concave exposed surface of the substrate; forming a non-porous film covering the interior wall of the concave portion and the porous film; selectively removing the non-porous film from the bottom of the concave portion and the non-porous film by anisotropic etch; forming a barrier metal film covering the porous film and the interior wall; and forming a metallic film on the barrier metal film to fill the concave portion. The anisotropic etch process uses an etching gas with mixing ratio MR, 45?MR?100, where MR=((gaseous “nitrogen” containing compound)+(inert gas))/(gaseous “fluorine” containing compound).

Abstract: A semiconductor integrated circuit includes S PLLs (S is an integer satisfying S?2), and the (k?1)th PLL 12(k-1) (k is an integer satisfying 2?k?S) is connected to the kth PLL 12k in the test mode. In this manner, the examination of S PLLs can be performed in a single test, and thereby it can reduce the time needed to examine PLLs in the semiconductor integrated circuit having a plurality of PLLs.

Abstract: A carrier tape according to the present invention includes a plurality of tape carrier packages provided at a regular interval on a lengthy insulating tape, a first and a second integrated circuit device respectively and mounted to each of the plurality of tape carrier packages. Further, a connecting line electrically short-circuits only between one of terminals for the first integrated circuit device and one of terminals for the second integrated circuit device. This configuration prevents the integrated circuit devices from being damaged by discharged static electricity as well as allows to conduct a performance test on the integrated circuit devices such as checking for input/output of a signal by applying a probe pin to an input or output pin.

Abstract: A semiconductor apparatus capable of simply detecting a crack generated in plural semiconductor chips while the design freedom is improved, includes a first semiconductor chip and a second semiconductor chip that is laminated on the first semiconductor chip, in which a first wiring that is formed along the outer periphery of the first semiconductor chip and a second wiring that is formed along the outer periphery of the second semiconductor chip are connected in series.

Abstract: A PLL circuit includes a phase comparing section, a low pass filter, a digital VCO circuit, and a frequency divider. The phase comparing section compares an inputted clock signal and a frequency-divided clock signal in phase to detect a phase difference. The low pass filter averages the phase difference outputted from the phase comparing section to output the averaged result as a frequency control input. The digital VCO circuit operates in synchronism with a reference clock signal, and generates a sync clock signal based on the frequency control input while a phase of the sync clock signal is controlled in units of predetermined resolution values. The predetermined resolution value is a 1/K (K is a natural number more than 1) of a period of the reference clock signal. The frequency divider frequency-divides the synch clock signal to generate the frequency-divided clock signal.

Abstract: A synchronization signal detector includes a horizontal synchronization level detector, a synchronization signal extractor, a first filter circuit, and a synchronous separator. The horizontal synchronization level detector detects a horizontal synchronization detection level HL for detecting a horizontal synchronization signal from a video signal Din. The synchronization signal extractor outputs a limited signal D1 obtained by extracting only a signal within a limit range (HL?n) to (HL+m) that is set based on the horizontal synchronization detection level HL from the video signal Din. The first filter circuit removes a high frequency component of the limited signal D1 and outputs it. The synchronous separator detects a horizontal synchronization signal HS from the output signal of the first filter circuit.

Abstract: A semiconductor integrated device has a wire layout structure such that SL1?SL2<SL3 wherein a minimum wiring space in a location where both of neighboring wires are fine wires is SL1, a minimum wiring space in a location where at least one of neighboring wires is a wide wire and the neighboring wires are at an equal potential is SL2, and a minimum wiring space in a location where at least one of neighboring wires is a wide wire and the neighboring wires are at an unequal potential is SL3.

Abstract: The semiconductor device, in which a flaking of a layer or an element is prevented, is provided. A bonding pad section 13 of a semiconductor device 1 includes a polysilicon film 131, a barrier metal film 133 provided on the polysilicon film 131 and a metallic electrode 134 provided on the barrier metal film 133. The surface roughness of the surface of the polysilicon film 131 in the side of the barrier metal film 133 is equal to or larger than 3 nm. Further, the polysilicon film 131 contains substantially no phosphorus.

Abstract: A semiconductor device includes a semiconductor substrate, a fuse which comprises a conductive material and is formed on a semiconductor substrate, a contacting target conductor region which is placed around the fuse on the semiconductor substrate and formed so as to make electrical contact with the fuse through the conductive material constituting the fuse when a process for cutting the fuse is carried out, and a determination unit which detects whether or not the fuse is electrically disconnected, and detects whether or not the contacting target conductor region and the fuse are electrically connected, and determines that the fuse is in a cut state when electrical disconnection of said fuse is detected or electrical connection between said contacting target conductor region and said fuse is detected.

Abstract: A semiconductor integrated circuit includes a memory, a BIST main circuit and a BIST sub circuit. The BIST sub circuit is to generate a row address pattern or a column address pattern of the memory and includes a boundary address generation circuit for alternately generating a top address and a bottom address of the memory for at least one of the row address pattern and the column address pattern. The BIST main circuit is provided in common with a plurality of memories and the BIST sub circuit is individually provided corresponding to the memories. The boundary address generation circuit includes a top address memory unit for storing the top address and a top/bottom address generation unit for reading out the top address and alternately outputting the top address and the bottom address.

Abstract: In a layout design method of a semiconductor integrated circuit, an IR drop data is calculated to indicate a voltage drop for every local area, and a virtual arrangement library is generated which stores data of a circuit cell to be arranged based on the IR drop data for every circuit module. A virtual arrangement net list is generated by converting the circuit cell contained in a net list into a virtual arrangement cell which is registered on the virtual arrangement library. The circuit module is automatically arranged based on the virtual arrangement net list; and the virtual arrangement cell contained in the automatically arranged circuit module is replaced with the circuit cell contained in the net list.

Abstract: A semiconductor device is proposed in which signal delay due to compensation capacitance elements in peripheral circuit element regions is eliminated. The semiconductor device includes: a first region including memory cells; a second region 10 including a functional circuit; cell capacitors formed in the first region; and compensation capacitance elements 36 to 38 formed in the second region 10, wherein the compensation capacitance elements 36 to 38 each include a lower electrode 36, a capacitance insulating film 37, and an upper electrode 38, the lower electrode 36, capacitance insulating film 37, and upper electrode 38 being the same as those of the cell capacitors, and wherein the compensation capacitance elements are formed over an upper layer of the second region 10 excluding upper layer portions of drain diffusion layers 44, 46 or gate electrodes 32 of transistors in the functional circuit.

Abstract: Provided is voltage/current conversion circuit including: first and second capacitors; first and second resistors each connected to input terminal; first and second current sources; third and fourth resistors connected to current sources; differential amplifier for controlling the current sources; control unit for performing control, in first state, the input terminal is connected to the first and second capacitors; one input of the differential amplifier is connected to the first resistor and output of the first current source; the other input of the differential amplifier is connected to the second resistor and output of the second current source, and in second state, the second capacitor is connected between the output of the first current source and the one input of the differential amplifier, the first capacitor is connected between the output of the second current source and the other input of the differential amplifier.