Abstract: A data processing system includes a plurality of processors, each processor configured to execute instructions, including a message send instruction, and a message filtering unit. The message filtering system is configured to receive messages from one or more of the plurality of processors in response to execution of message send instructions, each message indicating a message type and a message payload. The message filtering unit is configured to determined, for each received message, a recipient processor indicated by the message payload. The message filtering system is further configured to, in response to receiving, within a predetermined interval of time, at least two messages having a same recipient processor and indicating a same message type, delivering a single interrupt request indicated by the same message type to the same recipient processor, wherein the single interrupt request is representative of the at least two messages.

Abstract: A method of implementing inter-component function calls. The method comprises generating a lower tier indirection data structure comprising an entry indicating a location in memory of a function within a first software component, a higher tier indirection data structure comprising an entry indicating a location in memory of the lower tier indirection data structure, and a configuration data structure comprising an entry defining an active version of the first software component. The method further comprises implementing executable computer program code for an inter-component function call by referencing entries within the configuration data structure, the higher tier indirection data structure and the lower tier indirection data structure.

Abstract: An automatically configurable smart card comprises—a generic data structure provided for containing smart card specific data, and—a smart card operating system being adapted to automatically detect the generic data structure and to migrate the generic data structure.

Abstract: A wafer level packaging method entails providing electronic devices and providing a platform structure having cavities extending through the platform structure. The platform structure is mounted to a temporary support. One or more electronic devices are placed in the cavities with an active side of each electronic device facing the temporary support. The platform structure and the electronic devices are encapsulated in an encapsulation material to produce a panel assembly. Redistribution layers may be formed over the panel assembly, after which the panel assembly may be separated into a plurality of integrated electronic packages. The platform structure may be formed from a semiconductor material, and platform segments within each package provide a fan-out region for conductive interconnects, as well as provide a platform for a metallization layer and/or for forming through silicon vias.

Abstract: A differential magnetic field sensor system (10) is provided, in which offset cancelling for differential semiconductor structures in magnetic field sensors arranged close to each other is realized. The system (10) comprises a first, a second and a third magnetic field sensor (100, 200, 300), each of which is layouted substantially identically and comprises a, preferably silicon-on-insulator (SOI), surface layer portion (102) provided as a surface portion on a, preferably SOI, wafer and having a surface (104).

Abstract: An apparatus for restricting execution of software is disclosed. The apparatus includes a telecommunication device configured to communicate with a wireless device (e.g., an RFID device) using a first wireless communication protocol. The telecommunication device is configured to determine whether or not the telecommunication device is located in an authorized wireless environment, based on wireless devices detected by the telecommunication device. The telecommunication device is also configured to execute a program in response to determining that it is located in an authorized wireless environment. Conversely, the telecommunication device is also configured to inhibit execution of the program in response to determining that it is not located in an authorized wireless environment.

Abstract: A two-way Doherty amplifier for amplifying a modulated or non-modulated carrier signal, said carrier signal having a carrier frequency; wherein the Doherty amplifier comprises a first amplifier having a first amplifier output node, a second amplifier having a second amplifier output node, a combining node connected or connectable to a load, a first amplifier output line connecting the first amplifier output node to the combining node, and a second amplifier output line connecting the second amplifier output node to the combining node, and wherein the first amplifier output line has an electrical length of substantially one quarter wavelength of the carrier signal and the second amplifier output line has an electrical length of substantially one half wavelength of the carrier signal.

Abstract: A system controlled by firmware includes a memory and a processor. The memory includes a first memory block for storing non-programmable code used for performing key functions, and second and third memory blocks for storing programmable code used for performing normal functions. During operation, one of the second and third memory blocks in which the programmable code is being executed is an active memory block. After receiving new programmable code, the processor identifies the inactive memory block, stores the new programmable code therein, and switches to execute the new programmable code while continuing to perform the key functions using the non-programmable code.

Abstract: A circuit includes a first driver to provide a first driver signal at an output. The first driver signal corresponds to a voltage operatively coupled to a VSS terminal of the first driver when driving a logic low. A first capacitor includes a first terminal coupled to the VSS terminal of the first driver. A boost circuit includes a first input coupled to the output of the first driver and a first output coupled to a second terminal of the first capacitor. The boost circuit is configured to cause the first capacitor to provide a boosted voltage at the VSS terminal.

Abstract: A low semiconductor area impact mechanism for patching operations stored in a boot memory area is provided, thereby providing flexibility to such code. In this manner, current flash memory manager SCRAM, which is used for memory operations when the flash memory is unavailable can be replaced with a significantly smaller register area (e.g., a flip flop array) that provides a small patch space, variable storage, and stack. Embodiments provide such space saving without modification to the CPU core, but instead focus on the external flash memory manager. Patch code can be copied into a designated register space. Since such code used during flash memory inaccessibility is typically small, patching is provided for just a small area of the possible flash memory map, and program flow is controlled by presenting the CPU core's own address to redirect the program counter to the patch area.

Abstract: The embodiments described herein provide inverse class F (class F?1) amplifiers. In general, the inverse class F amplifiers are implemented with a transistor, an output inductance and a transmission line configured to approximate inverse class F voltage and current output waveforms by compensating the effects of the transistor's intrinsic output capacitance for some even harmonic signals while providing a low impedance for some odd harmonic signals. Specifically, the transistor is configured with the output inductance and transmission line to form a parallel LC circuit that resonates at the second harmonic frequency. The parallel LC circuit effectively creates high impedance for the second harmonic signals, thus blocking the capacitive reactance path to ground for those harmonic signals that the intrinsic output capacitance would otherwise provide. This facilitates the operation of the amplifier as an effective, high efficiency, inverse class F amplifier.

Abstract: A balun includes a dielectric layer having first and second sides, an electrically conductive plate on the second side of the dielectric layer, a first electrically conductive line on the first side and comprising a first end electrically connected to a first terminal and a second end, a second electrically conductive line on the second side and comprising a third end electrically coupled to a second terminal and a fourth end connected to an unbalanced terminal and a micro strip line comprising a fifth end electrically connected to the third end and a sixth end. The first electrically conductive line overlaps the second electrically conductive line. The second and the sixth ends are electrically coupled to the electrically conductive plate. The electrically conductive plate is hollowed in at least a region corresponding to an overlap area of the first electrically conductive line and second electrically conductive line.

Abstract: A memory array with RAM and embedded ROM including multiple RAM cells, a ROM cell, and a ROM enable circuit. Each RAM cell has a RAM cell structure with a first and second power terminals and configured to operate as a RAM cell when the memory array is in a RAM mode. The ROM cell has the same RAM cell structure in which at least one transistor is modified to cause the ROM cell to have a predetermined logic state. The ROM enable circuit enables bit lines of the ROM cell to control supply voltages provided to the power terminals of the RAM cells so that they settle to predetermined logic states in a ROM mode. The modified transistor has a pseudo transistor structure having a modified substrate that operates as a resistance, such as a doping region in the substrate having the same polarity type as the substrate.

Abstract: An apparatus for system design verification has a test case module for compiling a test case in a scripting language (such as TCL) and a testbench including the design under test and operating with a Hardware Descriptor Language (such as SystemVerilog). A stimulus generated by the test case module is applied to the testbench through an interface gasket based on ‘C’.

Abstract: Disclosed is a ROM memory including a first bitcell including a transistor to store two bits and first and second bit lines to read data stored in the bitcell, a second bitcell including a second transistor connected to the first transistor and sharing the first and second bit lines, and a virtual ground line adjacent the bit lines configured to ground the bitcells.

Abstract: A battery equalization circuit is provided, including: a positive battery node connecting to a positive node of a battery cell in a battery circuit with a plurality of other battery cells; a negative battery node connected to a negative node of the battery cell; a transformer winding receiving an AC voltage, the transformer winding having an upper transformer node and a lower transformer node; an upper triac connected between the positive battery node and the upper transformer node; a lower triac connected between the negative battery node and the lower transformer node; a control circuit for controlling the upper triac and the lower triac based on a measured cell voltage between the positive battery node and the negative battery node, and a total battery voltage of the battery circuit; and an isolation element connected between the control circuit and a data bus.

Abstract: Embodiments of RF amplifiers and packaged RF amplifier devices each include a transistor, an impedance matching circuit, and a video bandwidth circuit. The impedance matching circuit is coupled between the transistor and an RF I/O (e.g., an input or output lead). The video bandwidth circuit is coupled between a connection node of the impedance matching circuit and a ground reference node. The video bandwidth circuit includes a plurality of components, which includes an envelope inductor and an envelope capacitor coupled in series between the connection node and the ground reference node. The video bandwidth circuit further includes a first bypass capacitor coupled in parallel across one or more of the plurality of components of the video bandwidth circuit.

Abstract: A method of fabricating a plurality of semiconductor devices includes attaching a plurality of integrated circuit (IC) die to a substrate including forming electric connections between contacts on the IC die and contacts on the substrate. After the IC die is attached to the substrate, a first encapsulating material is placed over stress-sensitive areas of the IC die. The first encapsulating material includes thirty percent or less of filler particles greater than a specified size. A second encapsulating material is placed over the first encapsulating material. The second encapsulating material includes sixty percent or more of filler particles.

Abstract: An embedded component package includes an embedded component substrate. The embedded component substrate includes an electronic component having an active surface including bond pads and a package body encapsulating the electronic component. The package body includes a principle surface coplanar with the active surface. A localized redistribution layer (RDL) dielectric layer is on the active surface. A localized RDL conductive layer is on the localized RDL dielectric layer and is coupled to the bond pads through openings in localized RDL dielectric layer. A primary RDL dielectric layer encloses the entire embedded component substrate and directly contacts the localized RDL dielectric layer, the localized RDL conductive layer, and the principal surface of the package body. The localized RDL conductive layer provides additional space for routing of additional interconnects while the localized RDL dielectric layer acts as a stress buffer.

Abstract: A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate and spaced from one another along a first lateral dimension, and a drift region in the semiconductor substrate and through which charge carriers drift during operation upon application of a bias voltage between the source and drain regions. The drift region has a notched dopant profile in a second lateral dimension along an interface between the drift region and the drain region.