Abstract: The present application relates to a reinforcing structure (1, 2) for reinforcing a stack of layers (100) in a semiconductor component, wherein at least one reinforcing element (110, 118) having at least one integrated anchor-like part (110a, 110b), is provided. The basic idea is to reinforce bond pad structures by providing a better mechanical connection between the layers below an advanced underbump metallization (BUMA, UBM) by providing reinforcing elements under the UBM and/or BUMA layer.

Abstract: The present invention provides a driving circuit (100) in particular for driving a laser diode (700) or a modulator, at data speed in the order of Gb/s. The driving circuit (10) has a low-voltage, high-speed output stage capable of driving efficiently a laser diode (700) or a modulator The driver circuit (10) comprises a chain of circuits, said chain comprising a slew-rate control circuit, at least one translinear amplifier (200, 201, 202), a push/pull stage (300), and an output stage (400) for driving the load current. Due to its versatility, the driver can be used in other applications e.g. line drivers, cable drivers, high-speed serial interfaces for back-plane interconnect, etc. The driver can work at low supply voltages, e.g. 3.3V nominal down to 2.7V, with high power efficiency. One major clue is to use entirely the large signal current produced by the output stage, e.g. in the driven laser diode, without wasting current in supply lines.

Abstract: Devices comprising switching amplifiers such as class D amplifiers and comprising loads such as loud speakers are provided with controllers for controlling switching circuits for in respective four states introducing respective four voltage signals across the loads, which four voltage signals are different from each other. The controllers control the switching circuits for pulse width modulating the voltage signals in dependence of input signals and control the switching circuits for in fifth states introducing fifth voltage signals across the loads.

Abstract: The strength of adhesion between two layers is evaluated by applying a series of laser shocks directly to the surface of one of the layers. Adhesion strength is determined based on the wavelength and energy of the laser pulse creating the shock which causes rupture of the interface between the two layers.

Abstract: A metal interconnects structure, comprises a substrate (11), a dielectric layer (12) lying above the substrate, a stop layer (13) for metal etching lying above the dielectric layer, a metal layer (15?) lying above the stop layer, said metal layer being patterned according to a desired pattern.

Abstract: A light sensor is used to detect ambient light conditions. According to an example embodiment, a light sensor (112) detects color temperature and, in some instances, intensity characteristics of ambient light (120, 130, 140) in an environment and uses these detected characteristics (116) to determine the location of the sensor relative to natural and artificial light sources. This location determination is used to selectively operate circuits in a device such as a hand-held telephone, computer device or personal data assistant (PDA).

Abstract: A device, e.g., a hearing aid, has an electronic circuit for wireless communication of a digital signal. The circuit has a driver driving an RLC tank. The driver has a plurality of inverters whose outputs are coupled to a node of the coil via a respective one of multiple capacitors in the tank. The circuit has a controller that selectively drives one or more of the inverters with the digital signal and connects the inputs of the other inverters to a supply voltage or ground. The tank has a further plurality of series arrangements of a further capacitor and a high-voltage switch connected between the node and ground. The controller is configured for controlling the high-voltage switches.

Abstract: A channel encoding method of calculating, using a programmable processor, a code identical with a code obtained with a hardware channel encoder. The method comprises:—a first step (112, 120; 222) of reading the result of a first sub-system of parallel XOR operations between shifted bits in a first pre-computed lookup table at a memory address determined from the value of the inputted bits, the first pre-computed lookup table storing any possible result of the first sub-system at respective memory addresses, and—at least a step (116, 124; 226) of carrying out an XOR operation between the read result and the result of a second sub-system of parallel XOR operations using an XOR instruction of the programmable processor.

Abstract: An electronic circuit has a multi-way Doherty amplifier. The multi-way Doherty amplifier comprises a two-way Doherty amplifier with a main stage and a first peak stage that are integrated in a semiconductor device; and at least one further peak stage implemented with a discrete power transistor.

Abstract: An electric device has a resistor including a phase change material changeable between a first phase and a second phase within a switching zone. The resistor has a first resistance when the phase change material is in the first phase and a different second resistance, when the phase change material is in the second phase. The resistor may conduct a first current. The device has a heating element that may conduct a second current for enabling a transition of the phase change material from the first to the second phase. At the position of the switching zone, the resistor is arranged as a first line and the heating element is arranged as a second line. The first and second line may conduct the first current and the second current respectively, wherein the first line and the second line cross at the position of the switching zone.

Abstract: The invention relates to a tamper-resistant semiconductor device comprising a substrate (5) comprising an electronic circuit arranged on a first side thereof. An electrically-conductive protection layer (50, 50a, 50b) is arranged on a second side of the substrate (5) opposite to the first side. At least three through-substrate electrically-conductive connections (45) extend from the first side of the substrate (5) into the substrate (5) and in electrical contact with the electrically-conductive protection layer (50, 50a, 50b) on the second side of the substrate (5). A security circuit is arranged on the first side connected to the through-substrate electrically-conductive connections (45) and is arranged for measuring at least two resistance values (R12, R23, R34, R14, R13, R24) of the electrically-conductive protection layer (50, 50a, 50b) through the through-substrate electrically-conductive connections (45).

Abstract: A probe electrode structure on a substrate is described, comprising a first probe electrode and a neighboring second probe electrode on a layer sequence that generally includes, in a direction from the substrate to the probe electrodes, an electrically conductive bottom layer, an electrically insulating center layer and a electrically conductive top layer. The probe-electrode structure of the invention provides a means to detect an undercutting of the first probe electrode in an etching step that aims at removing the top layer from regions outside the first probe electrode. An undercutting that exceeds an admissible distance from the first edge of the first electrode will remove the first top-layer probe section in the first probe opening, which causes a detectable change of the electrical resistance between the first and second probe electrodes.

Abstract: A Microprocessor (1) in a security-sensitive computing system for processing an operand according to an instruction is for improving its security provided with a modulo-based check hardware (2) to perform operations in parallel to the microprocessor (1) and for comparing both results regarding congruence.

Abstract: The present invention relates to a stress buffering package (49) for a semiconductor component, with a semiconductor substrate (52); an I/O pad (54), electrically connected to the semiconductor substrate (52); a stress buffering element (74) for absorbing stresses, electrically connected to the I/O pad (54); an underbump metallization (70), electrically connected to the stress buffering element (74); a solder ball (60), electrically connected to the underbump metallization (70); a metal element (61) between the solder ball (60) and the semiconductor substrate (52); a passivation layer (56, 58), which protects the semiconductor substrate (52) and the metal element (61) and which at least partially exposes the I/O pad (54); characterized in that a roughness of an interface between the stress buffering element (74) and the passivation layer (56, 58) is lower than a roughness of an interface between the metal element (61) and the passivation layer (56, 58).

Abstract: An integrated circuit comprises a plurality of clock domains (10, 12). Test data is shifted into the integrated circuit through a scan chain (100, 14, 104). In a test mode a connection is interrupted between a functional output of a first clock domain (10) and a functional input of a second clock domain (12). Test data is applied from the scan chain (100, 14, 104) to the functional input and a test response is captured into from the functional output. A delay circuit (24, 28) is used to delay transfer of the test result from the scan cell (21) to the functional input when the test result is captured in the scan cell (21), to ensure that timing differences between the clock domains do not affect the test. Subsequently the test result is shifted through the scan chain.

Abstract: A fuse structure (106) includes a patterned conductor disposed over a passivation layer (302), which is disposed over a substrate (110), such as, for example, an inter-layer dielectric layer of an integrated circuit. A second passivation layer (112) is formed over the integrated circuit including over the fuse structure (106), and then patterned to open a window (108) through the second passivation layer (112) at a location over the fuse structure (106), with the window (108) fully landed by the underlying passivation layer (302). In various aspects of the present invention, the fuse (106) may be programmed either before or after the photoresist layer used in the patterning of the second passivation layer (112) is removed.

Abstract: Phase trackers (7) for tracking phases of received data are provided with interpolators (20), error detectors (21,22), combiners (25) and indicator generators (26) for generating at least two streams of interpolated samples, for generating error signals per stream, and for generating an indicator signal for adjusting the interpolation, to avoid the use of sync words for phase tracking. The indicator generator (26) converts combined error signals into indicator signals for adjusting the interpolation through shifting sampling phases of interpolated samples.

Abstract: A circuit arrangement and method utilize a variable threshold, multi-stage pulse shaping circuit to pulse shape a signal output by a crystal oscillator circuit. Each stage of the pulse shaping circuit includes a Schmitt trigger that drives an input of a latch, and that has a programmable trip point controlled to reject distorted pulses generated by the crystal oscillator circuit. A variable threshold, multi-stage pulse shaping circuit may be used, for example, to generate a clock signal for an electronic circuit that is more resistant to noise and other environmental effects, thereby reducing the likelihood of clock-related errors in the electronic circuit.

Abstract: A computer is disclosed comprising a processor able to support multithreading and concurrently programmed in at least two threads with respective GPS signal processing programs which are each capable of processing GPS signal samples outputted from the same source.

Abstract: The present invention provides a method for manufacturing a floating gate type semiconductor device on a substrate having a surface (2), and a device thus manufactured. The method comprises:—forming, on the substrate surface, a stack comprising an insulating film (4), a first layer of floating gate material (6) and a layer of sacrificial material (8),—forming at least one isolation zone (18) through the stack and into the substrate (2), the first layer of floating gate material (6) thereby having a top surface and side walls (26),—removing the sacrificial material (8), thus leaving a cavity (20) defined by the isolation zones (18) and the top surface of the first layer of floating gate material (6), and filling the cavity (20) with a second layer of floating gate material (22), the first layer of floating gate material (6) and the second layer of floating gate material (22) thus forming together a floating-gate (24).