Abstract: In an embodiment, an apparatus is disclosed that includes a duty cycle controller. The duty cycle controller includes a tuning circuit comprising a first field-effect transistor. The first field-effect transistor is configured to implement a capacitor. The duty cycle controller further includes an edge delay circuit. The edge delay circuit includes a second field-effect transistor that, when activated by an input clock signal of the duty cycle controller, is configured to connect a voltage source to an output clock signal of the duty cycle controller. The edge delay circuit further includes a third field-effect transistor that, when activated, is configured to connect the first field-effect transistor of the tuning circuit to the output clock signal.

Abstract: A semiconductor device includes: a constant current generating circuit unit; a first current mirror circuit unit having a constant current as an input current and generating a first mirror current as a mirror current; a level shift circuit unit including a clamp transistor between whose drain and source a first mirror current flows and to whose base a power supply voltage of the constant current generating circuit unit is applied, and a transistor that is connected in series to the clamp transistor and through which the first mirror current flows; a second current mirror circuit unit having as an input stage a transistor and having as an output stage a transistor through which a second mirror current replicating the first mirror current flows; and an error absorption circuit unit connected to a terminal for outputting the second mirror current of the output-stage transistor in the second current mirror circuit unit.

Abstract: A video image encoding device includes: an image encoding unit that performs predictive encoding by obtaining a difference between a divided image included in a frame as a target of predictive encoding and a prediction image; local decode generation unit that decodes an encoding result of the divided image by the image encoding unit to generate a reference image; a first buffer that stores pixel data generated by the local decode generation unit; a compression unit that refers to the first buffer to compress the reference image and generates compressed data; an allowable data amount setting unit that presets an allowable data amount to be stored in the memory for each predetermined area of the frame as the target of the predictive encoding; and a reference image storage determination unit that determines whether the compressed data is store in the memory based on the allowable data amount, and stores the compressed data in the memory based on a determination result of storing the compressed data in the memory

Abstract: In an embodiment, an apparatus is disclosed that comprises a voltage regulator and a regulator booster. The voltage regulator is supplied by an input and is configured to generate a regulated output. The regulated output has a voltage corresponding to an operating point of the voltage regulator. The regulator booster is connected to the voltage regulator and, when activated, is configured to boost the voltage of the regulated output by a target amount. The target amount is at least a portion of a magnitude of a voltage droop relative to the operating point that is caused by a change in a current load on the regulated output.

Abstract: In some embodiments, a method of operating a gas sensor includes setting power to a heater in contact with a MOx sensor to provide a temperature that is below a threshold temperature; holding the temperature below the threshold temperature for a period of time to reduce ozone concentration in a gas sample in contact with the MOx sensor; increasing power to the heater to increase the temperature of the MOx sensor to an operating temperature; acquiring resistance data from the MOx sensor at the operating temperature; and processing the resistance data to provide a result related the gas sample.

Abstract: A semiconductor device performs sequential comparison of an analog input signal and a reference voltage to digitally convert the analog input signal. The semiconductor device includes an upper DAC generating a high-voltage region of the reference voltage based on a predetermined code, a lower DAC generating a low-voltage region of the reference voltage based on the code, and an injection DAC having the same configuration as that of the lower DAC and adjusting the low-voltage region of the reference voltage.

Abstract: A data processing device includes a first CPU (Central Processing Unit), a first memory, a CAN (Controller Area Network) controller and a system bus coupled to the first CPU, the first memory and the CAN controller, wherein the CAN controller comprises a receive buffer that stores a plurality of messages each of which has a different ID, and a DMA (Direct Memory Access) controller that selects the latest message among messages having a fist ID stored in the receive buffer and transfers the selected latest message to the first memory, wherein the message is one of CAN, CAN FD and CAN XL messages.

Abstract: To provide a semiconductor device which can be stably operated while achieving a reduction of the power consumption. A semiconductor device includes a CPU, a system controller which designates an operation speed of the CPU, P-type SOTB transistors, and N-type SOTB transistors. The semiconductor device is provided with an SRAM which is connected to the CPU, and a substrate bias circuit which is connected to the system controller and is capable of supplying substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors. Here, when the system controller designates a low speed mode to operate the CPU at a low speed, the substrate bias circuit supplies the substrate bias voltages to the P-type SOTB transistors and the N-type SOTB transistors.

Abstract: A semiconductor device includes: a plurality of cores configured to receive power from a power supply; a plurality of power switch circuits provided for each core and configured to control the power supplied to the corresponding cores; a compare circuit configured to receive power from the power supply and compare output data of the plurality of cores; and a core voltage monitor circuit configured to monitor a voltage of a node that connects the power supply and the compare circuit.

Abstract: The semiconductor device includes a transmitting-side hierarchical block, a receiving-side hierarchical block and an inter-block circuit. The transmitting-side hierarchical block includes a first logic circuit and an output control circuit connected to the first logic circuit and controlling an output signal of the transmitting-side hierarchical block. The receiving-side hierarchical block includes a second logic circuit being scan test target and operating by receiving the output signal of the transmitting-side hierarchical block, and a test control circuit controlling the scan test of the second logic circuit. The inter-block circuit transmits the output signal of the transmitting-side hierarchical block to the receiving-side hierarchical block.

Abstract: A stacked-layer body including a gate insulating film and a control gate electrode is formed in a product region and a scribe region. Next, a gate insulating film and a conductive film are so formed that the stacked-layer body is covered. Next, an etching process is so performed to the conductive film that an upper surface of the conductive film is lower than that of an upper surface of the stacked-layer body, thereby forming a measurement pattern in the scribe region. Next, a memory gate electrode is formed by patterning the conductive film in the product region. Next, a silicide layer is formed on an upper surface of the memory gate electrode in the product region in a state where an upper surface of the measurement pattern is covered by an insulating film. Next, a resistance value of the measurement pattern covered by the insulating film is measured.

Abstract: One or more embodiments relate to a switch-mode power supply control circuit that can be used to provide power to regular single phase or three phase energy meter, while also offering a simple low cost method to detect a magnetic tampering event that usually occurs on energy meter. In one example, the switch-mode power supply for the energy meter is a flyback type switch mode power supply comprising a power switch, a switching controller, and a slew rate based magnetic field detection circuit which is configured to enable a magnetic tampering detection signal that can be communicated to the switching controller. Upon detection of a magnetic tampering event, the power supply and the supporting circuitry can raise the switching frequency of the power switch in order to provide more power to the output or cutoff power to the consumer's power outlet and even report the tampering event to the power station.

Abstract: A semiconductor device including an SRAM capable of sensing a defective memory cell that does not satisfy desired characteristics is provided. The semiconductor device includes a memory cell, a bit line pair being coupled to the memory cell and having a voltage changed towards a power-supply voltage and a ground voltage in accordance with data of the memory cell in a read mode, and a specifying circuit for specifying a bit line out of the bit line pair. In the semiconductor device, a wiring capacitance is coupled to the bit line specified by the specifying circuit and a voltage of the specified bit line is set to a voltage between a power voltage and a ground voltage in a test mode.

Abstract: In a semiconductor device having MONOS memories configured by fin-type MISFETs, an increase in parasitic capacitance between wirings accompanying miniaturization of the semiconductor device is prevented, and the reliability of the semiconductor device is improved. In a memory cell array in which a plurality of MONOS type memory cells formed on fins are arranged, source regions formed on the plurality of fins arranged in a short direction of the fin are electrically connected to each other by one epitaxial layer straddling the fins.

Abstract: A microcomputer performs a power supply operation to a wireless communication module at a first time interval set based on a power generation amount at a lowest day power generation amount of a temperature differential power generation module. In addition, the microcomputer performs the power supply operation to a sensor at a second time interval set based on the power generation amount at the lowest day power generation amount of the temperature differential power generation module.

Abstract: Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

Abstract: A semiconductor apparatus includes a mounting board, a system on chip (SOC) package and a memory package which are provided on the mounting board. The SOC package includes a semiconductor chip and a package substrate on which the semiconductor chip is mounted. The semiconductor apparatus further includes a signal wiring line through which a signal between the semiconductor chip and the memory package is transmitted, being provided on the package substrate and in the mounting board and a measurement terminal connected to the signal wiring line on main surface of the package substrate.

Abstract: A radial inductive position sensor, high-resolution position sensor system and a torque sensor system for detecting a rotational movement are disclosed. The radial inductive position sensor includes at least one transmitter coil, at least one receiver coil pair with a first receiver coil and a second receiver coil, and a moving conductive target, which is connected or connectable to a rotating shaft, wherein the at least one transmitter coil and the at least one receiver coil pair are arranged on a substrate, wherein the substrate has a radial configuration for at least partially surrounding the moving conductive target and/or the rotating shaft.

Abstract: In an embodiment, an apparatus an apparatus including a memory module is described. The memory module can include a plurality of memory ranks and a register clock driver (RCD) coupled to the plurality of memory ranks. The RCD can include a receiver configured to receive a chip select signal for selecting one or more memory ranks. The RCD can further include a logic circuit coupled to the receiver, and an output driver coupled to the logic circuit. The RCD can further include a loopback circuit configured to sample the chip select signal from one or more of a first sampling point between the receiver and the logic circuit and a second sampling point between the logic circuit and the output driver.

Abstract: Systems and methods for designing receiving coils of an inductive position sensor are described. A processor may receive input data indicating a shape of a target of the inductive position sensor. The processor may identify an overlapping region between the target and a transmitting coil of the inductive position sensor. The processor may determine a shape of a receiving coil cell based on the identified overlapping region. The processor may generate a model of the receiving coils of the inductive position sensor based on the shape of the receiving coil cell.