Abstract: For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed.

Abstract: A semiconductor substrate has a surface and a convex portion projecting upward from the surface. An n-type drift region has a portion located in the convex portion. The n?-type drain region has a higher n-type impurity concentration than the n-type drift region, and is arranged in the convex portion and on the n-type drift region such that the n?-type drain region and a gate electrode sandwich the n-type drift region in plan view.

Abstract: An interlayer insulating film has via holes. A sidewall conductive layer is arranged along a sidewall surface of one via hole and contains one or more kinds selected from a group including tungsten, titanium, titanium nitride, tantalum and molybdenum. A second metal wiring layer is embedded in one via hole and contains aluminum. A plug layer is embedded in the other via hole and contains one or more kinds selected from the group including tungsten, titanium, titanium nitride, tantalum and molybdenum.

Abstract: An upper surface of a plug (PL1) is formed so as to be higher than an upper surface of an interlayer insulating film (PIL) by forming the interlayer insulating film (PIL) on a semiconductor substrate (1S), completing a CMP method for forming the plug (PL1) inside the interlayer insulating film (PIL), and then, making the upper surface of the interlayer insulating film (PIL) to recede. In this manner, reliability of connection between the plug (PL1) and a wiring (W1) in a vertical direction can be ensured. Also, the wiring (W1) can be formed so as not to be embedded inside the interlayer insulating film (PIL), or a formed amount by the embedding can be reduced.

Abstract: The master interface generates copy data by copying the first data, and generates an error detection code based on the copy data. The protocol conversion unit generates the second data by converting the first data from the first protocol to the second protocol. The slave interface detects errors in the copy data based on the error detection code. The slave interface also generates the first verification data by performing a conversion from one of the first protocol or the second protocol to the other for one of the second data or copy data. In addition, the slave interface compares the second verification data with the first verification data, using the other of the second data or copy as the second verification data.

Abstract: Methods and apparatuses for controlling an apparatus comprising a controller integrated in a first slave device. In an example, the controller can detect a sensed current of the first slave device. The controller can receive a voltage signal associated with a second slave device connected to the first slave device. The controller can generate a correction current based on the sensed current of the first slave device and the voltage signal. The controller can modulate a pulse width modulation (PWM) signal received by the first slave device using the correction current. The controller can control a power converter using the modulated PWM signal.

Abstract: A DC-DC converter includes a high-side switch coupled between a first power supply and an output terminal, a low-side switch coupled between a second power supply and the output terminal, an inductor coupled to the output terminal, and a reverse current monitoring circuit that determines that a reverse current from the inductor to the output terminal occurs when the output terminal becomes a high voltage during a state in which the high-side switch and the low-side switch are in a dead time.

Abstract: A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature.

Abstract: A method for detecting a phase shift in an output signal of an inductive position sensor by calculating the phase spectrum of the position signal based on a Fast Fourier Transformation of the position signal and comparing the calculated phase spectrums over time to detect changes in the phase spectrums.

Abstract: Apparatuses, systems, and methods for implementing a multi-driver architecture are described. The multi-driver architecture may include a first driver and a second driver configured to receive an input voltage. A predriver logic circuit may select one of the first driver and the second driver to convert the input voltage into an output voltage. A controller may be connected to the first driver and the second driver, and a switch may be connected between an output terminal of the first driver and the controller. The controller may be configured to control an internal resistance of the switch. In response to the first driver being selected by the predriver logic circuit, the first driver may output the output voltage at a constant impedance level.

Abstract: A semiconductor device includes a memory array arranged in a matrix, a plurality of word lines provided corresponding to memory cell rows, a word driver for driving one of the plurality of word lines, a plurality of row select lines connected to the word driver, and a row decoder for outputting a row select signal to the plurality of row select lines based on input row address information. According to the embodiment, the semiconductor device can detect a failure of the address decoder in a simple method.

Abstract: A processing system includes a receiving circuit 1 for receiving an input signal from an externally connected sensor, an expected signal generating circuit 4 for automatically generating a teaching signal for use in the learning circuit 5, a learning circuit 5 for calculating a weight value, a bias value, and the like of the neural network model to form an expected signal from the teaching signal generated by the expected signal generating circuit 4 and the signal from the receiving circuit 1, an inference circuit 2 for performing signal processing based on a learned model of the neural network model generated by the learning circuit 5, and a validity verification circuit 3? for performing similarity calculation between an output signal of the inference circuit 2 and an expected signal for comparison.

Abstract: The power line communication device detects inverter noise from the voltage waveforms of the power line, and executes the output of the transmission signal in a period in which it is determined that the signal amplitude of the transmission signal in the transmission processing unit exceeds a predetermined value from the output amplitude of the inverter noise, and stops the output of the transmission signal in other periods.

Abstract: An image sensor including an ADC circuit receiving pixel data to be supplied in parallel from the a pixel array, outputting a reference signal in accordance with a digital code, comparing the reference signal and the pixel data, and outputting the digital code at which the reference signal and the pixel data have a predetermined relation, the ADC circuit including a ramp-signal generating circuit outputting a ramp signal having a gradient with respect to change of the digital code, the gradient being different between when the digital code is in a first range and when the digital code is in a second range different from the first range and an attenuator receiving the ramp signal to be supplied and outputting the reference signal having a gradient being the same between when the digital code is in the first range and when the digital code is in the second range.

Abstract: Apparatuses including multiple selectable circuit elements are described. In an example, an apparatus may include a power supply configured to output a voltage. The apparatus may further include a controller connected to the power supply and a transmission unit connected to the controller. The transmission unit may be configured to output power. The transmission unit may include comprising an inverter connected to the power supply. The inverter may include a high-side switching element. The transmission unit may further include a circuit element a circuit connected to the power supply. The circuit may be configured to select the circuit element. The circuit may include a switch connected between the inverter and the circuit element. The switch and the high-side switching element may be configured to be driven by the voltage outputted by power supply. The controller may be configured to control the power being outputted by the transmission unit.

Abstract: The semiconductor device 1 comprises a processor 2, a memory connected to the processor and a control circuit, and comprises an active operation mode and a standby operation mode. The memory comprises a normal mode and a RS mode lower power consumption than the normal mode. The memory comprises SRAMs 7_0 to 7_5 which includes a mode terminal RS_T supplied with mode instruction signals RS1_0 to RS1_5 specifying the normal mode or the RS mode, respectively. The control circuit supplies the mode instruction signals specifying the normal mode to the mode terminal of the SRAMs 7_0 to 7_2 in transition period which the semiconductor device transitions from the standby operation mode to the active operation mode. And the control circuit supplies the mode instruction signals specifying the normal mode to the mode terminal of the SRAMs 7_3 to 7_5 after transition to the active operation mode.

Abstract: A wafer having a semiconductor substrate including a peripheral region and a central region, an insulating layer and a semiconductor layer is prepared first. Next, a plurality of trenches penetrating through the semiconductor layer and the insulating layer and reaching an inside of the semiconductor substrate are formed. Next, an inside of each of the plurality of trenches is filled with an insulating film, so that a plurality of element isolating portions is formed. Next, in the central region, the semiconductor layer exposed from a resist pattern is removed. The end portion closest to the outer edge of the semiconductor substrate among ends of the resist pattern used for removing the semiconductor layer in the central region is formed so as to be positioned closer to the outer edge of the semiconductor substrate than a position of the end portion closest to the outer edge of the semiconductor substrate among ends of the resist pattern used for forming the trenches.

Abstract: A method for manufacturing a semiconductor device to provide a Metal Insulator Semiconductor Field Effect Transistor (MISFET) in a first region of a semiconductor substrate includes forming a first gate insulating film on the semiconductor substrate in the first region, forming a first gate electrode containing silicon on the first gate insulating film, forming first impurity regions inside the semiconductor substrate so as to sandwich the first gate electrode in the first region, the first impurity regions configuring a part of a first source region and a part of a first drain region, forming a first silicide layer on the first impurity region, forming a first insulating film on the semiconductor substrate so as to cover the first gate electrode and the first silicide layer, polishing the first insulating film so as to expose the first gate electrode, and forming a second silicide layer on the first gate electrode.

Abstract: An abnormality detection apparatus including a feature extraction circuit configured to extract a feature point and a feature value of a first image, and a feature point and a feature value of a second image, a flow calculation circuit configured to calculate, based on the feature value of the first image, a first abnormality detection circuit configured to detect an abnormality in the first image based on a first optical flow, and to detect an abnormality in the second image based on a third optical flow, and a second abnormality detection circuit configured to detect an abnormality in the first or second image based on a result of a comparison between the second optical flow and a fourth optical flow.

Abstract: Methods and system for clock alignment are described. In an example, a timing device can distribute a clock signal to a line card via a trace of a backplane. The timing device can further send a pulse to the line card at a first time via the trace. The timing device can further receive a return pulse from the line card at a second time via the trace. The timing device can determine a time difference between the first time and the second time. The time difference can indicate a propagation delay associated with the line card and the trace. The timing device can send the time difference to the line card. The line card can adjust a phase delay offset of the line card using the time difference.