Abstract: Access control is achieved in consideration of write training. Masters issue access requests including a read request and a write request. A memory controller accesses memory in response to the access requests issued by the maters. A central bus-control system controls the output of the access requests issued by the masters to the memory controller. A training circuit conducts training on the memory while the access to the memory is stopped. The central bus-control system further controls the execution of the training on the memory. During the training, the central bus-control system suppresses the output of the read request to the memory controller from among the access requests issued by the masters.

Abstract: Apparatuses and methods for adjusting a power capability of a system is described. In an example, a system can include an antenna array and a beamformer connected to the antenna array. The beamformer can include a communication channel. The system can further include a first power converter that can be configured to convert a supply voltage to a first regulated voltage. The first power converter can apply the first regulated voltage to the beamformer. The system can further include a second power converter that can be configured to convert the supply voltage to a second regulated voltage different from the first regulated voltage. The second power converter can apply the second regulated voltage to a power amplifier in the communication channel to adjust a maximum power capability of the power amplifier.

Abstract: A method of manufacturing a semiconductor device includes forming an interlayer insulating film over a main surface of a semiconductor substrate, forming a first conductive film pattern for a first pad and a second conductive film pattern for a second pad over the interlayer insulating film, forming an insulating film over the interlayer insulating film such that the insulating film covers the first and the second conductive film patterns, forming a first opening portion for the first pad, the first opening portion exposing a portion of the first conductive film pattern, and a second opening portion for the second pad, the second opening portion exposing a portion of the second conductive film pattern, in the insulating film, and forming a first plated layer by plating over the portion of the first conductive film pattern exposed in the first opening portion, and a second plated layer.

Abstract: A semiconductor device performs a software lock-step. The semiconductor device includes a first circuit group including a first Intellectual Property (IP) to be operated in a first address space, a first bus, and a first memory, a second circuit group including a second IP to be operated in a second address space, a second bus, and a second memory, a third bus connectable to a third memory, and a transfer control circuit coupled to the first to third buses. when the software lock-step is performed, the second circuit group converts an access address from the second IP to the second memory such that an address assigned to the second memory in the second address space is a same as an address assigned to the first memory in the first address space.

Abstract: A communications network controller module for storing media data in memory is disclosed. The module comprises a media access controller and a message handler. The message handler is configured, in response to receiving a frame comprising frame data from the media access controller, to identify a frame type for the frame, to identify a target queue in dependence upon the frame type, the target queue comprising a series of data areas in memory reserved for storing frames of the frame type, to obtain a current descriptor address of a current descriptor for the target queue, the current descriptor comprising a descriptor type field, a descriptor pointer field and a descriptor data size field, and to obtain an address in the series of data areas, to store a part of the frame data at the data area address.

Abstract: In a method of manufacturing a semiconductor device according to one embodiment, after a semiconductor wafer including a non-volatile memory, a bonding pad and an insulating film comprised of an organic material is provided, a probe needle is contacted to a surface of the bonding pad located in a second region, and a data is written to the non-volatile memory. Here, the insulating film is formed by performing a first heat treatment to the organic material. Also, after a second heat treatment is performed to the semiconductor wafer, and the non-volatile memory to which the data is written is checked, a barrier layer and a first solder material are formed on the surface of the bonding pad located in a first region by using an electroplating method. Further, a bump electrode is formed in the first region by performing a third heat treatment to the first solder material.

Abstract: A semiconductor device for controlling a three-phase motor with double windings, includes a first inverter that drives a first winding of the three-phase motor, a second inverter that drives a second winding of the three-phase motor and a communication line between the first and second inverters. The first and second inverters, through the communication line, notify a respective operation state each other.

Abstract: An electronic system device includes a semiconductor device and a power generating device for generating a power supply voltage. The semiconductor device includes a control circuit coupled with the power generating device via a power supply node, and a substrate-biased control circuit coupled with the control circuit. The electronic system device includes a DC-DC converter, and a switch arranged between the power supply nodes and the DC-DC converter. The control circuit sets the switch to an ON state after receiving the power supply voltage. The DC-DC converter receives the power supply voltage after the switch is controlled to the ON state. The substrate bias control circuit supplies a substrate bias voltage to the control circuit before the DC-DC converter receives the power supply voltage.

Abstract: A method of operating a hysteretic synthetic current-mode switching regulator is disclosed. In the switching regulator, PWM pulses (PWM) are generated by a PWM generator (20; FIG. 7) in dependence upon a ramp voltage (VR) which oscillates between upper and lower window voltages (VW+, VW?). The ramp voltage depends on a control voltage (VC) which depends on current (IL) through an inductor (6). The method comprise determining whether a period (T) equal to or greater than a given period (TREFRESH) has elapsed without a PWM pulse being generated, upon a positive determination, causing the ramp voltage to be pulled up to or above the upper window voltage (VW+) for a given duration (?T) and when said given duration has elapsed, causing the ramp voltage to decrease until a rising edge of a PWM pulse is generated.

Abstract: An object of the present invention is to provide an information input device capable of realizing high-precision touch operations. The information input device includes a first surface for displaying input request information, a second surface for inputting input request information, a viewpoint calculator for calculating a viewpoint direction of an input person, and a coordinate corrector for correcting a position input to the second surface into a second position in response to the viewpoint direction of the input person and inputs the input request information on the first surface corresponding to the second position. The information input device further provides a storage device for holding distance information on distance between the first surface and the second surface.

Abstract: Performance of a semiconductor device is improved. In one embodiment, for example, deposition time is increased from 4.6 sec to 6.9 sec. In other words, in one embodiment, thickness of a tantalum nitride film is increased by increasing the deposition time. Specifically, in one embodiment, deposition time is increased such that a tantalum nitride film provided on the bottom of a connection hole to be coupled to a wide interconnection has a thickness within a range from 5 to 10 nm.

Abstract: In a semiconductor device according to the related art, unfortunately, a non-safety unit mounted on the same device as a safety unit is modified with low flexibility. According to one embodiment, a first semiconductor chip and a second semiconductor chip each have space domain separation hardware for limiting access to hardware resources in a functional safety system. Safety unit software and space domain and time domain separation software are executed in a time sharing manner. Based on a timer installed on the semiconductor chip, the space domain and time domain separation software performs separation for intermittently executing the safety unit software in a predetermined cycle, self-diagnosis for examining an operation of the safety unit software, and mutual diagnosis made between the first semiconductor chip and the second semiconductor chip to mutually diagnose the operation of the space domain and time domain separation software for performing the separation and the self-diagnosis.

Abstract: A resistance element includes a conductor, the conductor having a repeating pattern of: a first conductive layer formed on a first interlayer insulating layer on a semiconductor substrate; a second conductive layer formed on a second interlayer insulating layer different from the first interlayer insulating layer; and an interlayer conductive layer connecting the first conductive layer and the second conductive layer, and the second conductive layer has a resistance-value fluctuation characteristic opposite to a resistance-value fluctuation characteristic of the first conductive layer after a heat treatment.

Abstract: In an embodiment, an apparatus is disclosed that includes a plurality of resistors arranged as a reverse bridge and configured to convert an input voltage to a scaled output voltage. The scaled output voltage is scaled to a target format based at least in part on a range of the input voltage and a fixed value of the plurality of resistors. The input voltage is generated based at least in part on at least one signal generated by a sensor based at least in part on a measurement of a property of a measurement target.

Abstract: A semiconductor device includes a semiconductor substrate, first and second trench electrodes formed on the semiconductor substrate, a floating layer of a first conductivity type formed around the first and second trench electrodes, a floating separation layer of a second conductivity type formed between the first and second trench electrodes and contacted with the floating layer of the first conductivity type and a floating layer control gate disposed on the floating separation layer of the second conductivity type.

Abstract: A semiconductor device has a position estimation part calculating an estimated position of a mobile at a scheduled time to project a message image, based on movement information of the mobile, a reference image signal output part deciding a reference area being an area to project a reference image, based on a relative positional relation between the mobile at the estimated position and the projection area, and outputting a reference image signal being a signal of the reference image, a test image signal acquisition part acquiring a test image signal being a signal of an image obtained by imaging the reference area with the reference image projected thereon, and an image adjustment part adjusting the message image signal, based on the reference image signal and the test image signal.

Abstract: An apparatus includes an amplifier circuit and a protection circuit. The amplifier circuit may be configured to generate an output signal by amplifying an input signal received at an input port. The input signal may be a radio-frequency signal. The protection circuit may be configured to (i) generate a detection signal by detecting when a level of the input signal exceeds a corresponding threshold, where the level is a power level, a voltage level or both, (ii) route the input signal away from the input port of the amplifier circuit and disable the amplifier circuit both in response to the detection signal being continuously active at least a first time duration and (iii) route the input signal to the input port of the amplifier circuit and enable the amplifier circuit both in response to the detection signal being continuously inactive at least a second time duration.

Abstract: According to semiconductor device includes a domain converter for converting a digitized resolver signal from a time-domain to a frequency-domain, a spectrum analyzer for analyzing a spectrum of the resolver signal converted to a frequency-domain by the domain converter, and an error detector for detecting an error related to the resolver signal based on an output signal from the spectrum analyzer.

Abstract: A gate drive semiconductor device includes: external terminals to which PWM control signals are supplied; external terminals outputting a drive signal for driving a three-phase BLDC motor; external terminals to which the counter electromotive voltage generated by driving the three-phase BLDC motor is supplied; a zero-cross determination unit generating an interrupt signal indicating timing at which the counter electromotive voltage intersects with a midpoint potential of the three-phase BLDC motor based on the PWM control signal and the counter electromotive voltage; and an external terminal outputting the interrupt signal.

Abstract: A semiconductor device includes: a semiconductor chip including a field effect transistor for switching; a die pad on which the semiconductor chip is mounted via a first bonding material; a lead electrically connected to a pad for source of the semiconductor chip through a metal plate; a lead coupling portion formed integrally with the lead; and a sealing portion for sealing them. A back surface electrode for drain of the semiconductor chip and the die pad are bonded via the first bonding material, the metal plate and the pad for source of the semiconductor chip are bonded via a second bonding material, and the metal plate and the lead coupling portion are bonded via a third bonding material. The first, second, and third bonding materials have conductivity, and an elastic modulus of each of the first and second bonding materials is lower than that of the third bonding material.