Abstract: One or more embodiments relate to a multi-phase voltage regulator with AVP or droop configured to implement a non-linear load line. According to certain aspects, the non-linear load line can have a non-linear or zero slope in a first current/voltage region and a constant non-zero slope in second current/voltage region. In embodiments, the non-linear or zero slope region can specify that for any value of output current in that region, the output voltage will be the same predetermined value. The non-zero slope region can specify that for any value of the output current in that region, output current will be multiplied by a constant non-zero droop resistance value.

Abstract: An electronic device comprises a switching regulator. Here, the switching regulator has a first wiring portion (including a parasitic inductance) coupling the high-side element and the low-side element, and a second wiring portion (including a parasitic inductance) coupled with the low-side element. Also, the switching regulator has a first region in where the first wiring portion and the second wiring portion are lined up with each other. As a result, the performance of the electronic device can be improved.

Abstract: Systems and methods for routing communication among a plurality of devices are described. In an example, a controller can detect a communication initiated from a first device to a target device among a second device and a third device. The controller can identify the second device as the target device. The controller can, in response to identifying the second device as the target device, activate a direct communication path between the first device and the second device to allow the first device to communicate with the second device using direct communication mode. The controller can, in response to identifying the second device as the target device, activate redriver path between the first device and the third device to allow the first device to communicate with the third device using redriver mode.

Abstract: A semiconductor device has a timer unit and a processing unit. The timer unit includes a binary counter, a first converter that converts a first count value output from the binary counter to a gray code to output as first gray code data. The processing unit includes a first synchronizer that captures the first gray code data transferred from the timer unit in synchronization with the system clock signal and outputs the captured first gray code data as second gray code data, and a fault detection unit that generates a data for fault detection based on the first gray code data transferred from the timer unit and compares a second count value based on the second gray code data with a third counter value based on the data for fault detection.

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor layer, a first insulating film, and a conductive film. The semiconductor layer is formed on the semiconductor substrate. A first trench reaching the semiconductor substrate is formed within the semiconductor layer. The first insulating film is formed on the inner side surface of the first trench such that a portion of the semiconductor substrate is exposed in the first trench. The conductive film is electrically connected with the semiconductor substrate and formed on the inner side surface of the first trench through the first insulating film. In plan view, a first length of the first trench in an extending direction of the first trench is greater than a second length of the first trench in a width direction perpendicular to the extending direction, and equal to or less than 30 ?m.

Abstract: A data processor capable of suppressing variation in latency during a bus access is provided. The data processor according to one embodiment includes a ring bus through which a plurality of relay circuits, being coupled to a plurality of bus masters and a plurality of slaves, are coupled in the shape of a ring. Each of the relay circuits includes: an arbitration circuit which arbitrates an adjacent request packet of an adjacent relay circuit and a bus request packet of a nearest bus master with use of priority of these request packets, and outputs the request packet after arbitration to a next relay circuit; and a priority adjustment circuit which adjusts priority of the bus request packet according to the number of relay circuits through which the bus request packet passes before reaching its destination.

Abstract: According to some embodiments, a wireless power transmitter is disclosed. The wireless power transmitter can include a plurality of transmission coils arranged to cover a charging area and coupled with a ferrite; a plurality of local power controllers, each of the plurality of local power controllers coupled to drive a subset of the plurality of transmission coils, each subset of the plurality of transmission coils including a plurality of the plurality of transmission coils; and a microcontroller unit (MCU) coupled to the plurality of local power controllers, the microcontroller unit including a MCU processor executing instructions to designate states of each of the plurality of transmission coils, the states including active, de-active, and selected for receiver detection, and executing instructions to transmit instructions to each of the plurality of local power controllers in accordance with the state designations.

Abstract: A semiconductor device includes: a sensor detecting electric capacitance of a touch key group comprising a plurality of touch keys arranged in a matrix; and a control device configured to perform character recognition based on a change in the electric capacitance of the plurality of touch keys detected by the sensor and on a sampling pattern that is time-series data of a loci.

Abstract: A semiconductor device includes m power transistors (m is an integer of 2 or more) coupled in parallel each of which has a sense source terminal, a Kelvin terminal and a source terminal, a first average circuit that connects the first resistor and the second resistor in order between the sense source terminal and the Kelvin terminal and generates first to fourth average voltages and an arithmetic circuit that measures a first current value flowing through the sense source terminal from the first and second average voltages, measures a second current value flowing through the sense source terminal from the third and fourth average voltages and measures a current value flowing through the source terminal from the first to fourth average voltages and the first and second current values.

Abstract: Example implementations include a system of secure decryption by virtualization and translation of physical encryption keys, the system having a key translation memory operable to store at least one physical mapping address corresponding to at least one virtual key address, a physical key memory operable to store at least one physical encryption key at a physical memory address thereof; and a key security engine operable generate at least one key address translation index, obtain, from the key translation memory, the physical mapping address based on the key address translation index and the virtual key address, and retrieve, from the physical key memory, the physical encryption key stored at the physical memory address.

Abstract: A semiconductor device 1 includes: a first oscillator 11_RC1 configured to operate at a detected voltage, the first oscillator having first temperature dependency; a second oscillator 11_RC4 configured to operate at the detected voltage, the second oscillator having second temperature dependency; a count unit configured to count an output of the first oscillator and an output of the second oscillator, the output of the first oscillator and the output of the second oscillator being supplied to the count unit; an arithmetic unit configured to calculate a count value CNT (T1) of the first oscillator and a count value CNT (T4) of the second oscillator, the count values of the first and second oscillators being counted by the count unit; and a determining unit configured to compare an output of the arithmetic unit with a threshold value to output a detected result signal corresponding to a result of the comparison.

Abstract: To improve an on-resistance of a semiconductor device. A plurality of collector regions are formed at a predetermined interval on a bottom surface of a drift layer made of SiC. Next, on the bottom surface of the drift layer, both of the drift layer and a collector region via a silicide layer are connected to a collector electrode.

Abstract: A semiconductor device with improved reliability is provided. The semiconductor device is characterized by its embodiments in that sloped portions are formed on connection parts between a pad and a lead-out wiring portion, respectively. This feature suppresses crack formation in a coating area where a part of the pad is covered with a surface protective film.

Abstract: A system for and a method of generating an ordered list of instructions comprising a list of pixel coordinates which are vertices of triangles in a strip of a reference input image in a source coordinate system such that transformation of the vertices to a corresponding output image in a destination coordinate system causes the triangles to be mapped to a block of image data which maps to a block of line memory (or “texture cache”). The method comprises dividing the reference output image into a plurality of tiled sections in the destination coordinate system. The method comprises, for each section, defining first and second boundaries of an array of strips of pixels in the section by dividing the section into blocks of line memory.

Abstract: A semiconductor device includes a semiconductor substrate having a main surface, a gate electrode formed on the main surface of the semiconductor substrate, a side-wall oxide film formed on a side wall of the gate electrode, a first insulating layer formed on the gate electrode and containing silicon nitride, and a second insulating layer formed between the gate electrode and the first insulating layer and containing silicon oxide.

Abstract: To allow a metal oxide film composed mainly of O and at least one of Hf and Zr to exhibit ferroelectric properties. After deposition of a hafnium oxide film on a semiconductor substrate via an insulating film, the semiconductor substrate is exposed to microwaves to selectively heat the hafnium oxide film. This makes it possible to form a larger number of orthorhombic crystals in the crystals of the hafnium oxide film. The hafnium oxide film thus obtained can therefore exhibit ferroelectric properties without adding, thereto, an impurity such as Si. This means that the hafnium oxide film having a reverse size effect can be used as a ferroelectric film of a ferroelectric memory cell and contributes to the manufacture of a miniaturized ferroelectric memory cell.

Abstract: Apparatuses for controlling data transaction between master and slave devices are described. A master port connected to a master device can include a voltage regulator, a bridging circuit connected to a network element, and a redriver circuit. In response to a data transaction corresponding to a first type of data transaction, the master port can activate the voltage regulator and deactivate the redriver circuit to support a first operation mode causing the master device to perform the data transaction with a slave device via the network element. In response to the data transaction corresponding to a second type of data transaction, the master port can deactivate the voltage regulator and activate the redriver circuit to support a second operation mode causing the master port to disconnect from a slave port connected to the slave device and the data transaction is fulfilled by a circuit connected to the slave device.

Abstract: A semiconductor device includes an external terminal, an input buffer having an input terminal connected to the external terminal, a voltage generating circuit configured to generate a test voltage supplied to the input terminal, and a control circuit configured to determine whether the input buffer is deteriorated based on the test voltage supplied to the input terminal and an output level of the input buffer responding to the test voltage.

Abstract: Exemplary embodiments may include a method of applying a charging pulse to an output capacitor, detecting satisfaction of a charging threshold, ending the charging pulse in response to the detecting the satisfaction of the charging threshold, and discharging the sampling capacitor in response to the detecting the satisfaction of the charging threshold. In some embodiments, once a sampling capacitor voltage drops below a discharging threshold, a charging pulse is applied. Exemplary embodiments may also include an apparatus with a controller coupled to an input node, a timer coupled to the controller, an inductive charger coupled to the controller, to an input node, and to an output node, and a sensor coupled to the controller and the output node. Exemplary embodiments may further include an apparatus where a sensor with a sampling capacitor has a first terminal coupled to the output node and a second terminal coupled to the controller and the inductive charger.

Abstract: A semiconductor device includes an image recognition device having a convolution arithmetic processing circuit. The convolution arithmetic processing circuit includes a coefficient register where coefficients of an integration coefficient table are set, a product calculation circuit that calculates products of an input image and the coefficients, a channel register where a channel number of the integration coefficient table is set, a channel selection circuit that selects an output destination of a cumulative addition arithmetic operation on the basis of the channel number, and a plurality of output registers that store a result of the cumulative addition arithmetic operation. The integration coefficient table is a table where a plurality of input coefficient tables are integrated and the integration coefficient table has a size of N×N. The product calculation circuit can calculate data of N×N all at once.