Abstract: A semiconductor device includes a temperature sensor, a scan control circuit which generates scan chain selection information in accordance with a measurement result of the temperature sensor, a clock control circuit which generates one or more scan chain clock signals based on an external clock signal and the scan chain selection information, a pattern generation circuit which generates a test pattern, and a logic circuit which includes a plurality of scan chains and which receives the scan chain clock signals and the test pattern. The clock control circuit generates the scan chain clock signal in association with each scan chain. During a burn-in test, the logic circuit captures the test pattern into the scan chain associated with the scan chain clock signal.

Abstract: Example implementations include a method of reducing current overshoot in a power regulator device, by detecting a change in an input current of an inductive charger device in response to a change in load on the inductive charger device, modifying an operating state of the inductive charger device in accordance with a first input current limit parameter based on a total input current limit parameter and a current division parameter, in response to the detecting the change in the input current, operating the inductive charger device in accordance with the first input current limit during a current limit period subsequent to the detecting the change in the input current, modifying the operating state of the inductive charger device in accordance with a second input current limit parameter based on the total input current limit parameter and the current division parameter, subsequent to the current limit period, and operating the inductive charger device in accordance with the second input current limit subseque

Abstract: An apparatus includes a plurality of registers and a host interface comprising a plurality of pins. One of the plurality of registers may be a power state entry register configured to control entry to a low power state. One of the plurality of pins may be an enable pin. The apparatus may be configured to enter the low power state in response to setting the power state entry register to a first value and providing the enable pin a signal with a first level. The apparatus may be configured to exit the low power state in response to providing the enable pin the signal with a second level. The apparatus may enter an idle state after exiting the low power state. The low power state may consume less power than the idle state. The enable pin is implemented as an input configured to control a status of a plurality of regulators.

Abstract: An image processing device includes a three-dimensional graphics processor that generates three-dimensional drawing data based on a three-dimensional drawing command, a command converter that converts the three-dimensional drawing command into a two-dimensional drawing command, a two-dimensional graphics processor that generates two-dimensional drawing data based on the converted two-dimensional drawing command and a display controller that displays the two-dimensional drawing data in place of the three-dimensional drawing data when a load of the three-dimensional graphics processor is high.

Abstract: Systems and methods for controlling data transaction between master and slave devices are described. A master device can be connected to multiple slave devices that can operate under one of a first, a second, and a third operation modes. The first operation mode can cause the master device to perform data transactions with the multiple slave devices via a network element and the multiple slave devices can be connected to one another via the network element. The second operation mode can disconnect the master device from the multiple slave devices, and multiple agents connected to the multiple slave devices can fulfill the data transactions. The third operation mode can cause the master device to perform data transactions with a first subset of the multiple slave devices via the network element, and can cause the master device to be disconnected from a second subset of the multiple slave devices.

Abstract: The present invention provides an electrode device, semiconductor device and a semiconductor system capable of accuracy detecting an object to be detected. According to one embodiment, the electrode device 11 is used for detecting the capacitance of the mutual capacitance system, and includes a reception electrode PR1, a transmission electrode PX1 arranged to face the reception electrode PR1, a transmission electrode PX2 arranged to face the reception electrode PR1 with the transmission electrode PX1 interposed therebetween, and a dielectric board 101 provided between the transmission electrode PX1 and the transmission electrode PX2 to fix the distance and the dielectric constant between the transmission electrode PX1 and the transmission electrode PX2.

Abstract: A semiconductor device includes an operation resource which performs a plurality of ECU functions, a peripheral resource which is shared by the plurality of ECU functions and a control mechanism which controls a period in which one of the ECU functions uses the peripheral resource. The control mechanism calculates, based on a budget value which is given in advance and is a performance allocation, a use prohibition period in which the one of the ECU functions is prohibited from using the peripheral resource within the predetermined unit time.

Abstract: One or more embodiments relate to a current limit mode control circuit for a buck-boost converter which can provide a stable switching of the converter by operating the converter in a current limit mode during an overcurrent condition, performing fewer state transitions while in the current limit mode, and/or by clamping (reducing to a lower value) the output of an error amplifier in the current limit mode for controlling a pulse width modulation (PWM) signal that drives the switching transistors.

Abstract: A CPU needs to perform reset operation when a secondary arithmetic processing unit controlled by the CPU controls a signal processing circuit. CPU A controls module A. CPU B controls module B. Module A and module B control a signal processing circuit. CPU A and CPU B issue a reset request to the signal processing circuit. The signal processing circuit performs a reset process based on the reset request accepted from the CPU and a control origin identification signal that identifies a CPU as an origin of controlling the module having started a signal processing section.

Abstract: A semiconductor device according to an embodiment comprises: a cell portion in which a vertical type MOSFET is formed; and a termination portion arranged adjacent to the cell portion. The termination portion includes a connection trench gate provided along a first direction. The cell portion includes: a plurality of first column regions provided along a second direction intersecting the first direction; and a plurality of trench gates provided along the second direction such that two trench gates are arranged between the two adjacent first column regions. The plurality of trench gates extend from the cell portion to the termination portion and are connected to the connection trench gate. The plurality of first column regions extend from the cell portion to the termination portion, and the termination portion includes a plurality of second column regions different from the plurality of first column regions.

Abstract: A rotation detection device includes a rotation detection circuit, a step-up power supply circuit, a step-down power supply circuit, a first power supply path, and a second power supply path. The rotation detection circuit is configured to detect a rotation number of a motor that generates a torque applied to a steering mechanism of a vehicle, based on an electric signal. The electric signal is generated according to a rotation angle of the motor that is acquired through an in-vehicle sensor.

Abstract: Amplification device and processes capable of miniaturization in a device for performing linear amplification and switching amplification operations on incoming signals are provided. The amplifying device includes a first amplifying unit for amplifying an input signal and outputting a first output signal, the input switch unit connected in parallel with the first amplifying unit for performing a switching operation by an input signal and outputting a switch output signal, and a second amplifying unit for amplifying a first output signal or a switch output signal and outputting a second output signal, and the first amplifying unit or the input switch unit operates based on the type of the input signal.

Abstract: A hardware circuit in which integer numbers are used to represent fixed-point numbers having an integer part and a fractional part is disclosed. The hardware circuit comprises a multiply-accumulate unit configured to perform convolution operations using input data and weights and, in dependence thereon, to generate an intermediate result. The hardware circuit comprises a bias bit shifter configured to shift a bias value bitwise by a bias shift value so as to provide a bit-shifted bias value, a carry bit shifter configured to shift a carry value bitwise by a carry shift value so as to provide a bit-shifted carry value, an adder tree configured to add the intermediate result, the bit-shifted bias value and the bit-shifted carry value so as to provide a multiple-accumulate result and a multiply-accumulate bit shifter configured to shift the multiple-accumulate result bitwise by a multiply-accumulate shift value) to provide a bit-shifted multiply-accumulate result.

Abstract: A semiconductor device having an IE-type IGBT structure comprises a stripe-shaped trench gate and a stripe-shaped trench emitter arranged to face the trench gate formed in a semiconductor substrate. The semiconductor device further comprises an N-type emitter layer and a P-type base layer both surrounded by the trench gate and the trench emitter formed in the semiconductor substrate. The semiconductor device also comprises a P-type base contact layer arranged on one side of the trench emitter and formed in the semiconductor substrate. The p-type base contact layer, the emitter layer, and the trench emitter are commonly connected with an emitter electrode. The trench emitter is formed deeper than the trench gate in a thickness direction of the semiconductor substrate.

Abstract: A semiconductor device has a split-gate type MONOS structure using a FinFET, and it includes a source and a drain each formed of an n-type impurity diffusion layer, a first channel forming layer which is formed under a control gate and is formed of a semiconductor layer doped with a p-type impurity, and a second channel forming layer which is formed under a memory gate and is formed of a semiconductor layer doped with an n-type impurity. Further, the semiconductor device includes a p-type semiconductor layer which is formed under the second channel forming layer and has an impurity concentration higher than an impurity concentration of a semiconductor substrate.

Abstract: To make an excessive power receiving request by a sink when a USB Type-C legacy cable is used. An electronic device includes a first and second terminals connected to a cable, a detection circuit for detecting the voltage of the first and second terminals, and a first or second terminal detected by the detection circuit. It is provided with a controller that determines the type of cable based on the terminal voltage and confirms the power supply capacity of the external electronic device connected via the cable according to the type of cable.

Abstract: A semiconductor device includes a package substrate, a semiconductor chip and a solder bump. The semiconductor chip is disposed on the package substrate. The package substrate includes a first electrode pad, and a first insulating film formed such that the first insulating film exposes a first portion of a surface of the first electrode pad. The semiconductor chip includes a second electrode pad and a second insulating film formed such that the second insulating film exposes a second portion of a surface of the second electrode pad. The second electrode pad is formed on the first electrode pad through the solder bump. L2/L1 is 0.63 or more in a cross section passing through the first electrode pad, the solder bump and the second electrode pad. A first length of the first portion and a second length of the second portion are defined as L1 and L2, respectively.

Abstract: Methods and apparatuses for controlling a rectified voltage outputted by a rectifier circuit is described. In response to an occurrence of an overvoltage condition, an apparatus can regulate a gate-source voltage of a low-side switching element of the rectifier circuit to control the rectified voltage. The apparatus can include an operational amplifier that can compare a reference voltage and with a scaled voltage measured at a node between the low-side switching element and a high-side switching element of the rectifier circuit. The operational amplifier can output a voltage to regulate a gate-source voltage of a low-side switching element. The apparatus can further include a current sensor configured to sense current flowing through the low-side switching element. A power dissipation of the low-side switching element can be controlled based on the current being sensed by the current sensor.

Abstract: A semiconductor device includes a semiconductor substrate, an insulating film, a ferroelectric film, a first seed layer and a control gate electrode. The semiconductor substrate includes a source region and a drain region which are formed on a main surface of the semiconductor substrate. The insulating film is formed on the main surface of the semiconductor substrate such that the insulating film is positioned between the source region and the drain region in a plan view. The ferroelectric film is formed on the insulating film and includes hafnium and oxygen. The first seed layer is formed on the ferroelectric film. The control gate electrode is formed on the ferroelectric film. A material of the first seed layer includes at least one material of the ferroelectric film and at least one material of the first conductive film.

Abstract: A semiconductor device includes a master circuit which outputs a first write request signal for requesting to write data, a bus which receives the data and the first write request signal, a bus control unit which is arranged on the bus, generates an error detection code for the data and generates a second write request signal which includes second address information corresponding to first address information included in the first write request signal and memory controllers which each write the data into a storage area of an address designated by the first write request signal and writes the error detection code into a storage area of an address designated by the second write request signal in the storage areas of memories.