Abstract: Exemplary implementations include dynamically compensating a system voltage by determining an actual load current based on a sense voltage across a sense resistor and a resistance of the sense resistor, the sense resistor being operatively coupled to a system node, generating a gain current based on the actual load current and a predetermined load current, determining a gain voltage based on a system gain and the gain current, and generating a compensation voltage based on a predetermined system voltage at a system node, an actual system voltage at the system node, and the gain voltage.

Abstract: To suppress the occurrence of system shutdown after long term storage of batteries. A semiconductor device comprises a control unit that controls charging and discharging of a battery cell, and a ROM that stores a power supply capability value which specifies a power supply capacity of the battery cell that can be stably supplied to an application system in which the battery pack is provided. After the battery pack returns from the sleep mode and before the transmission request of the power supply capability value is received from the system, the control [unit performs a power supply capability value updating process of updating the power supply capability value in the ROM to a value smaller than the power supply capability value before the sleep mode.

Abstract: An ultrasonic flow measurement system may include a signal generator configured to generate a first excitation signal for a first ultrasonic transducer and a second excitation signal for a second, different ultrasonic transducer. The system may further include a phase differentiator configured to generate a differential phase angle signal indicative of a difference in phase angle between first and second receive signals received from the first and second transducers which is indicative of flow rate.

Abstract: The data processing apparatus includes a memory protection setting storage unit capable of storing a plurality of address sections as memory protection setting targets, a plurality of first determination units provided for each of the address sections stored in the memory protection setting storage unit and provisionally determining whether or not an access request is permitted based on whether or not an access destination address specified by the access request corresponds to the address section acquired from the memory protection setting storage unit, and a second determination unit finally determining whether or not the access request is permitted based on the classification information and the results of provisional determinations by the first determination unit.

Abstract: One or more embodiments are directed to a battery charger that can support multiple battery applications with a single USB type-C port. The architecture can be easily extended to support more applications such as those including two or more USB Type-C ports by adding additional voltage regulators. Additionally, the architecture can easily be extended to support additional batteries by adding corresponding battery chargers. Some embodiments enable supplying two or more system voltages and charging two or more batteries simultaneously using a single adapter and/or port. Other embodiments enable supplying voltage to On the Go devices from two or more batteries simultaneously.

Abstract: A technique which improves the reliability in coupling between a bump electrode of a semiconductor chip and wiring of a mounting substrate, more particularly a technique which guarantees the flatness of a bump electrode even when wiring lies in a top wiring layer under the bump electrode, thereby improving the reliability in coupling between the bump electrode and the wiring formed on a glass substrate. Wiring, comprised of a power line or signal line, and a dummy pattern are formed in a top wiring layer beneath a non-overlap region of a bump electrode. The dummy pattern is located to fill the space between wirings to reduce irregularities caused by the wirings and space in the top wiring layer. A surface protection film formed to cover the top wiring layer is flattened by CMP.

Abstract: To provide a semiconductor device having improved reliability. The semiconductor device has, on a SOI substrate thereof having a semiconductor substrate, an insulating layer, and a semiconductor layer, a gate insulating film having an insulating film and a high dielectric constant film. The high dielectric constant film has a higher dielectric constant than a silicon oxide film and includes a first metal and a second metal. In the high dielectric constant film, the ratio of the number of atoms of the first metal to the total number of atoms of the first metal and the second metal is equal to or more than 75%, and less than 100%.

Abstract: A data processing device has an instruction decoder, a control logic unit, and ALU. The instruction decoder decodes instruction codes of an arithmetic instruction. The control logic unit detects the effective data width of operation data to be processed according to the decode result from the instruction decoder and determines the number of cycles for the instruction execution corresponding to the effective, data width. The ALU executes the instruction with the number of cycles of the instruction execution determined by the control logic unit.

Abstract: A semiconductor device includes a semiconductor substrate, an insulating layer, a semiconductor layers and a silicide layer. The insulating layer is formed on the semiconductor substrate. The semiconductor layer is formed on the insulating layer and includes a polycrystalline silicon. The silicide layer is formed on the semiconductor layer. The semiconductor layer has a first semiconductor part and a second semiconductor part. The first semiconductor part includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type. The second semiconductor part is adjacent the second semiconductor region. In a width direction of the first semiconductor part, a second length of the second semiconductor part is greater than a first length of the first semiconductor part. A distance between the first and second semiconductor regions is 100 nm or more in an extension direction in which the first semiconductor region extends.

Abstract: The CPU includes a plurality of CPU cores. The temperature determination unit determines whether or not the temperature indicated by the acquired temperature information is equal to or higher than a threshold value. When it is determined that the temperature indicated by the temperature data is equal to or higher than the threshold value, the thermal generation control unit performs thermal generation control on the CPU. The group data includes high-priority group information specifying a CPU core of a first group to which execute of a high-priority application is allocated in the CPU, and low-priority group information specifying a CPU core of a low-priority group to which execution of a low-priority application is allocated in the CPU. Based on the group data, the control target determining unit determines a CPU core to be subjected to thermal generation control from among the CPU cores of the low priority group.

Abstract: A system and method of transmitting power according to some embodiments includes sequentially pinging each of a plurality of transmit coils to locate a receiver; determining one or more active coils from the plurality of transmit coils based on the location of the receiver; activating the one or more active coils in a full-bridge mode to transfer power to the receiver; determining a base efficiency based on the one or more active coils; monitoring non-active ones of the plurality of transmit coils; determining if the receiver has moved based on the monitoring; if the receiver has moved to a new position, determining secondary coils according to the new position, and transitioning power to provide power from a new active coil configuration.

Abstract: A roadside radio device includes a first radio unit which receives a radio data packet from an in-vehicle radio device, and a first application unit which processes application data. The first radio unit includes a radio data processing unit including a correlation processing unit which compares a data string of vehicle identification information with a data string of communication type information to determine whether there is a correlation in the radio data packet. When the correlation processing unit determines that there is the correlation in the radio data packet, the first radio unit outputs the application data included in the radio data packet to the first application unit. When the correlation processing unit determines that there is no correlation in the radio data packet, the first radio unit treats the radio data packet as invalid data.

Abstract: According to an embodiment, a semiconductor device 1 includes a semiconductor substrate 50 including an upper surface, a trench electrode 22 provided inside a trench 20 formed on the upper surface, and a trench insulating film 21 provided between the trench electrode 22 and the semiconductor substrate 50. The semiconductor substrate 50 includes a first semiconductor layer of a first conductivity type, a lower end of the trench electrode 22 reaching the first semiconductor layer, a deep layer 19 of a second conductivity type partially provided on the first semiconductor layer in contact with the trench insulating film 21, a second semiconductor layer of the second conductivity type provided on the first semiconductor layer and on the deep layer 19 in contact with the trench insulating film 21, and a third semiconductor layer of the first conductivity type provided on the second semiconductor layer above the deep layer 19.

Abstract: An image processing device includes an application execution unit which executes an image processing application, an image processing circuit which performs image processing, a memory control circuit which is capable of accessing a plurality of memories and a memory allocation determination unit which determines a memory allocation of the image data on the basis of memory address management information, operation unit-specific information and application information. The application execution unit distributedly stores the image data in the plurality of memories on the basis of the memory allocation determined by the memory allocation determination unit.

Abstract: An inductive position sensor including at least one transmit coil, an absolute position receive coil pair, a high-resolution position receive coil pair and a conductive moving target, the absolute position receive coil pair and the high-resolution receive coil pair together define a measurement area of the inductive position sensor and the moving target can move in this measurement area, the absolute position coil pair has a first sine receive coil and a first cosine receive coil, both having one period over the measurement area of the inductive position sensor, the high-resolution position receive coil pair has a second sine receive coil and a second cosine receive coil, both having at least two periods over the measurement area of the inductive position sensor, the absolute position receive coil pair and the high-resolution position receive coil pair are arranged in the same area of a printed-circuit board of the inductive position sensor.

Abstract: A measuring device and measuring system which accurately measure a pulse wave propagation velocity. The measuring instrument includes: a fixing part attachable to and detachable from a subject; a first piezoelectric sensor fixed to the fixing part; a second piezoelectric sensor fixed to the fixing part at a prescribed distance from the first piezoelectric sensor; and an analyzing part for calculating a pulse wave propagation velocity in the subject according to time difference between time of detection of peak voltage by the first piezoelectric sensor and time of detection of peak voltage by the second piezoelectric sensor, and the prescribed distance.

Abstract: The data transfer has room for improvement of reduction in the operating electric current flowing on the signal bus and correct acquisition of the large amount of data. Each of data, a first clock signal and a second clock signal, a phase of which shifts by a predetermined amount from the first clock signal, has an amplitude that is smaller than an amplitude of a power supply voltage, and each of a semiconductor device and a memory device takes input of data in synchronization with rise edges of first and second clock signals.

Abstract: When a plurality of write data is merged to generate a code for protecting data stored in the main memory, the write data is protected in the memory controller. A first code generation unit generates a first code based on the write data stored in a first sub memory, and stores the generated first code in a second sub memory. The sub memory controller reads the write data to be merged from the first sub memory, and verifies whether the read write data includes an error by using the first code stored in the second sub memory. When the read write data does not include an error, the sub memory controller merges valid data of the write data read from the first sub memory, and outputs the merged data to a second code generation unit. The second code generation unit generates a second code based on the merged data.

Abstract: A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au—Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au—Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au—Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.

Abstract: In accordance with some embodiments of the present invention, a wireless power receiver that ramps an ASK impedance is presented. A method of amplitude shift key (ASK) modulation in a wireless power receiver includes initiating transition of an ASK impedance from a first state to a second state, the ASK impedance being coupled to a resonant circuit that includes a wireless power receive coil that receives a time-varying magnetic field; transitioning the ASK impedance from the first state to the second state according to the transition over a plurality of switching cycles of the time-varying magnetic field; and holding the second state.