Abstract: The semiconductor device has an optical waveguide formed on a substrate, a first conductor film formed in the same layer as the optical waveguide, an insulating film formed on the first conductor film, a second conductor film formed on the insulating film, and a first interlayer insulating film formed on the substrate so as to cover the optical waveguide and the second conductor film. The semiconductor device includes a first contact hole reaching the first conductor film, a second contact hole reaching the second conductor film, a first contact plug formed in the first contact hole, and a second contact plug formed in the second contact hole. The first conductor film is disposed between the first contact plugs and the board, but the second conductor film is not disposed between the first contact plugs and the board.

Abstract: The method of the present invention improves quality and reliability of resin mold-type semiconductor devices. The method includes the steps of placing a lead frame such that cavities of a mold match with device formation regions of the lead frame, respectively, and forming encapsulation bodies that encapsulate semiconductor chips by flowing encapsulating resin into the cavities. The mold with an upper mold half and a lower mold half clamped together has a plurality of first gates that allow the cavities to communicate with a runner, and a dummy-cavity gate that allows a dummy cavity to communicate with the runner. During a resin molding process, from the time when the resin starts flowing into the mold to the time when the encapsulation bodies are formed, an orifice of each cavity gate is larger in size than an orifice of the dummy-cavity gate.

Abstract: An object of the present invention is to increase a writing speed to a flash memory while suppressing an increase in noise. In the high-speed write mode, the memory controller simultaneously performs a first write operation with a second write current having a current value smaller than the first write current with respect to a second number of memory cells having a larger number than the first write current. At the completion of the first write operation, the memory controller simultaneously performs the second write operation by the third write current having a larger current value than the second write current with respect to the memory cell determined by the sense amplifier to have not completed the write operation in the determination process.

Abstract: A semiconductor device includes an insulating layer, an optical waveguide formed on the insulating layer, a multilayer wiring layer formed on the insulating layer such that the multilayer wiring layer covers the optical waveguide, and a first inductor formed in the multilayer wiring layer.

Abstract: A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an automated tool, and for facilitating a power shutdown control inside a chip. In the semiconductor integrated circuit device, power shutdown priorities are provided by independent power domains (Area A to Area I). A method for preventing a power domain having a lower priority from being turned OFF when a circuit having a high priority is turned ON is also provided.

Abstract: A MOS transistor is allowed to recover from BTI degradation even when an operation mode signal is inactive. A semiconductor device includes a drive circuit coupled to a controlled circuit via a delay element. The drive circuit includes first and second MOS transistors coupled in series to each other. The first MOS transistor is controlled to be in an OFF state when the operation mode signal is active. When the operation mode signal is inactive, the first MOS transistor is controlled to be in the OFF state at least temporarily while the second MOS transistor is controlled to be in the OFF.

Abstract: Exemplary embodiments may include a method of applying a charging pulse to an output capacitor, detecting satisfaction of a charging threshold, ending the charging pulse in response to the detecting the satisfaction of the charging threshold, and discharging the sampling capacitor in response to the detecting the satisfaction of the charging threshold. In some embodiments, once a sampling capacitor voltage drops below a discharging threshold, a charging pulse is applied. Exemplary embodiments may also include an apparatus with a controller coupled to an input node, a timer coupled to the controller, an inductive charger coupled to the controller, to an input node, and to an output node, and a sensor coupled to the controller and the output node. Exemplary embodiments may further include an apparatus where a sensor with a sampling capacitor has a first terminal coupled to the output node and a second terminal coupled to the controller and the inductive charger.

Abstract: A semiconductor memory device includes a memory array including a plurality of memory blocks, an address allocation information storage unit which stores address allocation information, a block selection circuit which selects one memory block which corresponds to an input address which is input on the basis of the address allocation information and a refresh control circuit which controls a refreshing operation. One of the memory blocks is allotted to a surplus memory block. The refresh control circuit transfers data which is stored in one memory block which is a refreshing object to the surplus memory block and thereafter allocates address information of the memory block which was the refreshing object to the surplus memory block to which the data is transferred and newly allots the memory block which was the refreshing object to the surplus memory block.

Abstract: An IGBT with improved switching characteristics is disclosed. The contact hole CH1 in which the emitter potential electrode EE is buried is formed at a position overlapping with the trench T 1 in which the gate electrode G 1 is buried in plan view. The upper surface of gate electrode G1 in trench T1 is retracted, and an interlayer insulating film IL2 is formed on the top of trench T1. Since the bottom of the contact hole CH1 is located on the interlayer insulating film IL2 in the trench T 1 and in the base region PB, the emitter potential electrode EE is not in contact with the gate electrode G 1.

Abstract: The present invention provides a semiconductor device capable of detecting illegal data in secret data communications. A semiconductor device that transmits and receives data includes a specific bit extraction block that extracts first data from transmission data in accordance with a first rule, another specific bit extraction block that extracts second data from reception data in accordance with a second rule, and a bit pattern accumulation buffer that accumulates the first data and the second data. A scramble pattern used when scrambling the transmission data is generated by a combination of the first data and the second data accumulated in the bit pattern accumulation buffer.

Abstract: The subject in the past is that there are a large number of data wirings in a semiconductor device including multiple memory cell arrays and that the area occupied by the data wirings is large. In a selected memory cell array among multiple memory cell arrays, a data wiring functions as a local wiring that transmits the data of the selected memory cell. In a memory cell array that is not selected among the memory cell arrays and is located between a data circuit and the selected memory cell array, the data wiring functions as a global wiring that transmits the data of a memory cell of the selected memory cell array.

Abstract: In a memory, multiple pieces of entry data sorted in ascending or descending order are stored associated with addresses. With whole addresses for storing the multiple pieces of entry data as an initial search area, the search circuit repeatedly performs a search operation for comparing entry data stored in a central address of the search area with the search data, outputting the address as a search result in the case of a match, and narrowing the search area for the next search based on a magnitude comparison result in the case of a mismatch.

Abstract: According to one embodiment, a semiconductor device includes an ECC decoder which performs diagnosis on data using an error detection code for the data, an ECC encoder which generates an error detection code for a first data piece equivalent to a bit range accounting for a part of plural bits configuring the data and generates an error detection code for a second data piece equivalent to a bit range accounting for a remaining part of the bits, and a diagnosis circuit which, when no error in the data has been detected by the ECC decoder, compares a part of the data corresponding to the first data piece with the first data piece used in generating the first error detection code and compares a part of the data corresponding to the second data piece with the second data piece used in generating the second error detection code.

Abstract: A semiconductor-product testing device that supplies a test pattern for testing a semiconductor product to the semiconductor product includes a pattern memory that stores a part of the test pattern. The pattern memory is rewritten during a time when the semiconductor product is tested by a part of the test pattern stored in the pattern memory included in the semiconductor-product testing device.

Abstract: Improve semiconductor device performance. The wiring WL1A on which the semiconductor chip CHP1 in which the semiconductor lasers LD is formed is mounted has a stub STB2 in the vicinity of the mounting area of the semiconductor chip CHP1.

Abstract: A semiconductor device has a coil and wirings under the coil. In addition, a distance between the upper face of the wirings and the bottom face of the coil is 7 ?m or larger, and the wirings have a plurality of linear wiring parts each wiring width of which is 1 ?m or smaller. In addition, the linear wiring parts do not configure a loop wiring, and the coil and the linear wiring parts are overlapped with each other in planar view.

Abstract: To provide a semiconductor device having improved reliability. The semiconductor device has, on a SOI substrate thereof having a semiconductor substrate, an insulating layer, and a semiconductor layer, a gate insulating film having an insulating film and a high dielectric constant film. The high dielectric constant film has a higher dielectric constant than a silicon oxide film and includes a first metal and a second metal. In the high dielectric constant film, the ratio of the number of atoms of the first metal to the total number of atoms of the first metal and the second metal is equal to or more than 75%, and less than 100%.

Abstract: A semiconductor device, a semiconductor system, and a control method of a semiconductor device are capable of accurately monitoring the lowest operating voltage of a circuit to be monitored. According to one embodiment, a monitor unit of a semiconductor system includes a voltage monitor that is driven by a second power supply voltage different from a first power supply voltage supplied to an internal circuit that is a circuit to be monitored and monitors the first power supply voltage, and a delay monitor that is driven by the first power supply voltage and monitors the signal propagation period of time of a critical path in the internal circuit.

Abstract: A semiconductor device includes a common resource commonly used by plural processes executed on a processor, a semaphore controlling the possessory right of the common resource, and a semaphore management unit performing a process of acquiring the possessory right of the common resource to the semaphore in response to a request of a process performed on the processor. When a request to acquire the possessory right of the common resource is received from a first process in the plural processes and the possessory right cannot be obtained, the semaphore management unit switches the process executed on the processor to a second process, repeatedly performs a process of acquiring the possessory right requested by the first process to the semaphore and, when the possessory right requested by the first process is obtained, switches the process on the processor from the second process to the first process.

Abstract: A semiconductor device has a first semiconducting layer including an optical waveguide, a dielectric layer formed on the optical waveguide, and a conductive layer formed on the dielectric layer. A refractive index of a material of the conductive layer is smaller than a refractive index of a material of the first semiconductor layer.