Abstract: A read only memory integrated semiconductor device includes at least one memory cell. The memory cell includes a storage transistor made within a semiconductor substrate and whose source is connected to ground. A word line is connected to the gate of the transistor. Only one of several bit lines may be connected to the drain of the transistor at a time.

Abstract: The device for the comparison of the levels of two input signals MI, PI includes a first comparator COMP1, the switching of the comparator being expressed by a change-over of the output OUT1 of the comparator from a first logic state into a second logic state, the change-over of the output OUT1 from one logic state “0” into the other state “1” being faster than the change-over in the other direction. The device also includes a second comparator COMP2 with an identical structure, to whose input the signals to be compared are applied invertedly so that the switching operations in the comparators are inverted. The output of each comparator is applied to an associated logic circuit 1, 2 capable of accelerating the inverse switching in the other comparator for a change in the output corresponding to the fastest change-over.

Abstract: A signature generator circuit is provided for generating a signature word relating to a plurality of words. The signature generator circuit includes a logic gate that receives the plurality of words in series at one input, and a shift register that has a data input, a clock input, and a register output. The clock input receives a clock signal that sets the rate of the plurality of words, the data input is coupled to the output of the logic gate, and the register output is coupled to another input of the logic gate. In a preferred embodiment, the shift register also has a parallel output for outputting the contents of the shift register. Also provided is a method for generating a signature relating to a plurality of words using a logic gate and a shift register. The contents of the shift register are reset. One of the words is supplied in series to the logic gate, at least one of the bits in the shift register is also supplied to the logic gate, and the output of the logic gate is stored in the shift register.

Abstract: The present invention relates to a method of manufacturing an electrically programmable memory cell with a lateral floating gate with respect to the control gate, including the steps of forming an insulated control gate on an active area; forming a thin insulating layer around the control gate; successively depositing a thin layer of a conductive material and a layer of an insulating material; anisotropically etching the insulating material to form spacers of this material; and removing the portions of the thin conductive layer which are not coated with the spacers.

Abstract: A method of vapor phase epitaxy deposition of silicon on a silicon substrate on or in which exist areas containing dopants at high concentration, among which is boron, while avoiding a selfdoping of the epitaxial layer by boron, including the step of introducing a chlorinated gas, before the epitaxial deposition step, to etch the substrate across a thickness smaller than 100 nm.

Abstract: A pseudo-random number generator includes a first generator for producing a sawtooth waveform signal having a first frequency, and a second generator for producing a pulse signal having a second frequency. A sampling circuit samples the sawtooth waveform signal and the pulse signal for generating a sample signal of the sawtooth waveform signal at the second frequency. A coding circuit codes the amplitude of the sample signal to supply binary values. The pseudo-random number generator has applications in integrated circuits which are used in contact type or contactless IC cards.

Abstract: A circuit of electric arc generation from an A.C. voltage, includes circuitry for making the electric arc frequency substantially independent from possible amplitude variations of the A.C. voltage.

Abstract: A device for the programming of cells of an electrically programmable non-volatile memory. The device comprising a first reference input for receiving an erase signal for erasing one or more memory cells in the non-volatile memory and a second reference input for receiving an programming signal for programming one or more memory cells in the non-volatile memory. A regulation circuit coupled to the first reference input and coupled to the second reference input for regulating the magnitude of an erasure signal and for regulating the magnitude of a programming signal so that an electric field of approximate equal absolute magnitude is created on the floating gate of one or more memory cells during an erase type operation and an programming type operation.

Abstract: A device for the regeneration of a clock signal from an external serial bus includes a ring oscillator and counter. The ring oscillator provides n phases of a clock signal. Of these n phases, one phase is used as a reference and is applied to the counter. It is thus possible to count the number of entire reference clock signal periods between a first pulse and a second pulse received from the bus. In reading the state of the phases in the oscillator upon reception of the second pulse, a determination is made for a current phase corresponding to the phase delay between the reference clock signal and the second pulse of the bus. By using a regeneration device that also includes a ring oscillator and a counter, it is possible to regenerate the clock signal of the bus with high precision.

Abstract: A serial input/output memory is able to read data in the memory upon reception of a partial read address in which there are N least significant bits lacking to form a complete address. The read-ahead step includes: simultaneously reading the P first bits of M words of the memory having the same partial address; when the received address is complete, selecting the P first bits of the word designated by the complete address and delivering these bits at the serial output of the memory; reading P following bits of the word designated by the complete address during the delivery of P previous bits and delivering these bits at the serial output of the memory when the P previous bits are delivered.

Abstract: An integrated circuit memory includes a FLASH memory including a circuit for recording a word presented on its input without the possibility of recording simultaneously several words in parallel. The integrated circuit memory may include a buffer memory with a sufficient capacity to store a plurality of words, the output of which is coupled to the input of the FLASH memory. A circuit is also included for recording into the buffer memory a series of words to be recorded into the FLASH memory and recording into the FLASH memory the words first recorded into the buffer memory.

Abstract: The present invention relates to a circuit for supplying a load from an approximately D.C. voltage obtained by rectifying an A.C. voltage, including means for extracting from the rectified A.C. voltage an information depending on a phase angle variation of the A.C. voltage, and a means for making the approximately D.C. load supply voltage independent from the phase angle variation of the A.C. voltage.

Abstract: A digital signal processing system, including an analog-to-digital converter adapted to provide at least n-bit samples to a processor, and range selection circuitry for stepwise adjusting the range of the analog-to-digital converter to the amplitude of an input signal and for shifting the position of the n-bit samples on the processor bus according to the selected range.

Abstract: The method is for forming porous silicon in a silicon substrate, in particular for improving the quality factor of an inductive circuit produced on a silicon semiconductor wafer which also incorporates integrated transistors. The rear face of the wafer, already incorporating the transistors and the inductive circuit on its front face, is placed in contact with an acid electrolyte containing hydrofluoric acid and at least one other acid. An anodic oxidation of the silicon of the wafer at the rear face is carried out so as to convert this silicon into porous silicon over a predetermined height from the rear face which is in contact with the electrolyte.

Abstract: The present invention relates to a digital filter for a phase-locked loop receiving at least one input signal having a predetermined period, including an element of accumulation of frequency values receiving the output of a phase detector; and an element of accumulation of phase values receiving a weighted sum of the output of the phase detector and of the content of the element of accumulation of frequency values. Each of the accumulation elements includes several frequency or phase value storage locations, circuitry being provided for successively making operative the storage locations in the phase-locked loop during a period of the input signal.

Abstract: A diaphragm-support disc for a polishing machine of the type in which a work piece to be polished is sandwiched between a radial front face of a diaphragm and a polishing surface or cloth. The diaphragm is extended across and wrapped around the peripheral edge of a radial front face of the disc, and a radial rear face of the diaphragm is subjected to pressure from a fluid. The diaphragm-support disc includes a main annular part that projects from the radial front face of the disc and is located in a peripheral region of the radial front face of the disc a predetermined distance from the peripheral edge of the radial front face of the disc. The main annular part can act on the work piece through the diaphragm so as to press the work piece onto the polishing surface or cloth by an axial displacement of the disc with respect to the polishing surface or cloth.

Abstract: A semiconductor device of the type having an integrated circuit with connection terminals connected to metal pads by connecting wires is provided. The integrated circuit includes a substrate-on-insulator type semiconductor substrate having a lower portion on top of which there is an upper insulating layer. A first semiconductor block and a second semiconductor block are produced in the upper insulating layer, and decoupling means are arranged in the upper insulating layer between the first and second semiconductor blocks. The first semiconductor block defines a first capacitor with the lower portion of the substrate, the second semiconductor block defines a second capacitor with the lower portion of the substrate, and the decoupling means includes at least one semiconductor well that defines a decoupling capacitor with the lower portion of the substrate. The capacitance of the decoupling capacitor is higher than the capacitance of each of the first and second capacitors.

Abstract: An integrated circuit electrically is supplied with a voltage and includes an output MOS transistor having a gate driven by an output of a logic circuit and a circuit for biasing the gate of the output MOS transistor. The circuit for biasing the gate is provided for lowering a gate-source bias voltage of the output MOS transistor in a conductive state in relation to the gate-source bias voltage that would otherwise be provided by the output of the logic circuit. The present invention is particularly applicable to output stages for I2C buses.

Abstract: A process for forming a low resistivity titanium silicide layer on the surface of a silicon semiconductor substrate. In the process, an effective amount of a metallic element such as indium, gallium, tin, or lead is implanted or deposited on the surface of the silicon substrate. A titanium layer is deposited on the surface of the silicon substrate, and a rapid thermal annealing of the titanium-coated silicon substrate is performed to form low resistivity titanium silicide. In preferred processes, the metallic element is indium or gallium, and more preferably the metallic element is indium. A semiconductor device that has a titanium silicide layer on the surface of a silicon substrate is also provided.

Abstract: Disclosed are a self-catalytic bath and a method for the deposition of Ni—P alloy on a substrate. The bath comprises nickel sulfate, sodium hypophosphite as a reducing agent, acetic acid as a buffer and traces of lead as a stabilizer. It also includes a citrate used as a complexing agent associated with a gluconate used both as a catalyst and a stabilizer. The disclosed bath makes it possible to tolerate large quantities of hypophosphite and is relatively long-lived. Furthermore, it can be used to prepare large quantities of Ni—P alloy per liter of solution.