Abstract: A ROM including columns of memory cells connected by columns to respective bit lines; a reference bit line; charge transistors controllable by a common charge line and respectively connecting the bit lines and the reference bit line to a high supply potential. The reference bit line is associated with a column of unprogrammed cells, and the memory includes means for activating the charge line before activation of a word line, the duration between the activation of the charge line and the activation of the word line, and the features of the charge transistors, being chosen so that the level variation of the bit lines is low as compared to the level of the high supply potential.

Abstract: A device for detecting the application of a high voltage signal to an internal node of an integrated circuit includes a high-voltage divider circuit and a threshold detection circuit. The threshold detection circuit receives a signal given by the output of the divider circuit, and provides a threshold crossing detection signal at an output thereof based upon the signal crossing a threshold. The detection circuit is connected between the logic supply voltage and ground, and further includes a negative feedback loop. The negative feedback loop is connected to the output of the divider circuit to limit the voltage build-up of the high voltage signal at the output thereof after the crossing of the detection threshold by the signal.

Abstract: A Pfield operation defined according to the Montgomery method by Pfield(A, B)N=A*B*I mod N, where I is a determinable error, is implemented in a processor. The least significant word of the data elements A and N which are stored in elementary sub-registers are shifted twice. This eliminates delay cells in a processor used for executing the Pfield operation.

Abstract: In a EEPROM memory architecture organized into word columns that includes n memory cells per word column, there is, for each word of the column, one diffusion line to connect sources of the memory cells to a ground connection transistor using a source line. A word read access includes simultaneously selecting the word accessed in a read mode in a first group of memory cells, and an additional word in the second group of memory cells. Each column has n bit lines ranked 0 to n−1, each connected to the same ranked cells in the first group of memory cells.

Abstract: A method and device decode a compressed image, and in particular, an image compressed according to the MPEG standards, especially a bidirectional image. To perform two successive decodings of a bidirectional image, the address of the data packet containing the start-of-image identifier of the bidirectional image is tagged, and the temporal reference of this image is stored. After the first decoding, the stored address of the memory is again pointed to and a second decoding is performed after a new detection of the temporal reference of the image.

Abstract: A device for the regeneration of a clock signal uses a reference clock signal given by an internal oscillator to measure the number of reference clock pulses between the first two synchronization pulses sent by an external serial bus or USB at the beginning of each transaction. Thus a rough measurement N is obtained of the USB clock signal to be regenerated. The delay of each of these two synchronization pulses with respect to the previous pulse of the reference clock signal is measured. This delay is computed with respect to an internally defined time unit. On the basis of the measurement of these two delays, and the measurement of the number of reference clock periods, and knowing the measurement n of the period of the reference clock signal in the time unit, the period of the USB clock signal to be regenerated is computed with precision.

Abstract: The protection device for an interconnection line of an integrated circuit includes a charge flow-off device connected between the interconnection line to be protected and the substrate of the integrated circuit. The protection device also includes a dummy interconnection line ANT to activate the flow-off device. The protection device is active throughout the manufacture of the integrated circuit.

Abstract: An integrated circuit fuse includes a substantially bar-shaped central region and zones having electrical contacts. The central region includes a thinned zone forming a weak point facilitating fusing of the fuse by increasing the local current density as compared to standard fusing conditions. The thinned zone is preferably obtained by proximity optical effect between the fuse and adjacent dummy elements.

Abstract: A structure of electronic devices integrated in a semiconductor substrate with a first type of conductivity comprising at least a first HV transistor and at least a second LV transistor, each having a corresponding gate region. Said first HV transistor has lightly doped drain and source regions with a second type of conductivity, and said second LV transistor has respective drain and source regions with the second type of conductivity, each including a lightly doped portion adjacent to the respective gate region and a second portion which is more heavily doped and comprises a silicide layer.

Abstract: In a method of communications between a host system and a memory card with an asynchronous transmission protocol, a message from the card is sent out in response to a control instruction comprising a character or a sequence of several characters in a predetermined format. The protocol is modified so as to have the dispatch of each message or of each character of a message preceded by a detection, by the card, of a response request instruction sent out by the host system.

Abstract: The collector of a vertical bipolar transistor is selectively doped by a first implantation of dopants before the epitaxy of the base, and is selectivly doped by a second implantation of dopants through the epitaxial base. Two implanted zones with different widths are obtained. The base of the vertical bipolar transistor is thinned and the collector resistance is optimized.

Abstract: The memory (MM) is addressed, depending on the format, with address words (MDC) formed at least from the high-order bits of the identifier (ID) of each cue, and possibly padded out with check or selection words (MS) making it possible either to designate consecutive addresses or to select some of the latter from each memory cell (CM) depending on the low-order bits of the identifier. This allows continuous addressing of the memory irrespective of the format used, thereby optimizing the memory size and avoiding a structural or software modification of the addressing system with each change of format.

Abstract: The present invention relates to a method of formation of a conductive line on integrated circuits including the steps of etching a first insulator layer to create therein openings of predetermined width at the locations where the conductive line is to be formed; depositing and etching a first interconnection layer of a first thickness; and depositing and etching a second interconnection layer of a second thickness; the predetermined width being higher than twice the greatest of the two thicknesses, and lower than twice the sum of the thicknesses.

Abstract: A process for polishing, on a polishing machine and under defined polishing conditions, the external surface of at least one wafer of integrated circuits comprising a projecting feature covered over the entire surface of the wafer with an external layer of a material, consisting in calculating a main equivalent thickness equal to the main surface density of the projecting feature multiplied by the thickness of the latter; in polishing, under the defined polishing conditions, a reference wafer comprising an external layer of the material, having a uniform thickness and covering the surface of this reference wafer, so as to determine the rate of removal by the polishing machine corresponding to the ratio of the thickness removed to the polishing time elapsed; in calculating a polishing time equal to the ratio of the aforementioned equivalent thickness to the aforementioned rate of removal; in calculating a total equivalent thickness equal to the sum of the main equivalent thickness and of a complementary thickn

Abstract: The process for fabricating a network of nanometric lines made of single-crystal silicon on an isolating substrate includes the production of a substrate comprising a silicon body having a lateral isolation defining a central part in the body. A recess is formed in the central part having a bottom wall made of dielectric material, a first pair of opposed parallel sidewalls made of dielectric material, and a second pair of opposed parallel sidewalls. At least one of the opposed parallel sidewalls of the second pair being formed from single-crystal silicon. The method further includes the epitaxial growth in the recess, from the sidewall made of single-crystal silicon of the recess, of an alternating network of parallel lines made of single-crystal SiGe alloy and of single-crystal silicon. Also, the lines made of single-crystal SiGe alloy are etched to form in the recess a network of parallel lines made of single-crystal silicon insulated from each other.

Abstract: A voltage regulator with a current limiter includes a voltage regulating circuit including an amplifier circuit and a feedback circuit. The amplifier circuit includes a ballast or pass resistor and the feedback circuit supplies a first feedback voltage to the amplifier circuit, which is compared to a reference voltage. The voltage regulator further includes a current limiter circuit including a current limiter transistor in series with the ballast transistor and an output of the voltage regulator and a feedback circuit supplying a second feedback voltage to a controller for controlling the current limiter transistor. The controller causes the current limiter transistor to operate between saturation and blocking conditions depending on whether the second feedback voltage, which is representative of the output of the voltage regulator, is above or below a predetermined threshold voltage.

Abstract: A circuit for measuring a propagation time of an edge of a signal between an input and an output of a logic cell. The circuit includes a plurality of logic cells of a first type that are electrically coupled in a series, and a plurality of multiplexers, each having a selection input, first and second data inputs, and an output. Each of the plurality of logic cells has a first input and an output, the output of each logic cell in the series being respectively electrically coupled to the first input of a next logic cell in the series. The output of a last logic cell in the series is electrically coupled to the first input of a first logic cell in the series to form a ring. The selection input of each multiplexer of the plurality of multiplexers is electrically coupled to the output of one logic cell in the series, with the output of each multiplexer being electrically coupled to the first input of the next logic cell in the series.

Abstract: An integrated control and regulation circuit for a power stage of a regulated power supply, includes a current generator which, when the power supply is switched on, charges a decoupling capacitor to decouple a power stage of the power supply, through a first switch. The output from a logic circuit controls this first switch, and opens it when the regulated output voltage from the power stage reaches its nominal value. Preferably, a second switch controlled by the same output from the logic circuit deactivates a regulation loop of the power stage during the start up phase and in the case of a short circuit.

Abstract: The present invention relates to an integrated circuit including at least one logic circuit, able to operate at a first operating frequency, and a clock distribution circuit, the clock distribution circuit receiving a first clock signal and providing to the logic circuit a second clock signal, generated from the first clock signal, the frequency of the second clock signal being substantially equal to the first operating frequency. The clock distribution circuit includes a frequency multiplying circuit for generating the second clock signal, so that the frequency of the first clock signal may be lower than the first operating frequency to reduce or minimize the power consumed by the clock distribution circuit.

Abstract: A one-way switching circuit of the type including a gate tun-off thyristor biased to be normally on, further includes, between the gate and a supply line, a capacitor and a controllable switch connected in parallel.