Abstract: In a method for the display of teletext headers on a television receiver screen during a search for a teletext page, the teletext service uses a first group of characters comprising fixed characters and locations to receive variable characters and a second group of sets of characters, each set of characters being proper to a language and being designed to be introduced selectively at the locations of variable characters of said first group. The set of characters to be introduced into the first set is selected as soon as the first data packet enabling it to be identified is received by the TV receiver in such a way that the headers are displayed properly.

Abstract: A configurable electronic circuit having configuration nodes is provided. Each of the configuration nodes is coupled to corresponding first circuitry that is non-modifiable during configuration and second circuitry that is modifiable during the configuration. The non-modifiable first circuitry selectively imposes one of at least a first potential and a second potential on the configuration node prior to configuration, and the modifiable second circuitry allows modification of the potential imposed on the configuration node by the non-modifiable first circuitry. In a preferred embodiment, the modifiable second circuitry includes at least one fuse that is in an intact state before configuration and that can be changed to a destroyed state after configuration. This enables a reduction in the number of fuses that have to be destroyed during the configuration of the circuit. Also provided is an information processing system that includes at least one configurable electronic circuit having configuration nodes.

Abstract: A circuit for generating a pulse-width-modulated signal comprises a phase-locked loop (PLL) having a duty-cycle-insensitive phase comparator and a Sigma-Delta pulse width modulation circuit suitable for providing the voltage-controlled oscillator function of the PLL. Thereby, frequency of the signal generated is synchronized by the PLL to the specified frequency of a synchronization signal, and is thus independent of the duty cycle.

Abstract: The FAMOS memory location comprises a single floating gate (GR) overlapping an active surface of a semiconductor substrate according to at least two asymmetrical overlap profiles (PF1, PF2) so as to define at least two electrodes in the active region. Memory location programming means (MC, SW) are capable of selectively applying different predetermined sets of bias voltages to the electrodes so as to confer at least three programming logic levels on the memory location.

Abstract: A device for automatically converting a digital sample sequence X(n) inputted at a first frequency fe and converted into an output digital sample sequence Y(m) at a second frequency fs which is smaller than fe. An interpolator-decimator assembly having a decimation rate equal to &ggr;, selected so as to correspond to the frequency offset fe/fs is based on a polyphased filter having p tables of q elements each, said filter being designed such that samples X(n) are input at the fe frequency and table components are activated according to clocking of a second clock derived from the fe clock and wherein one clock pulse is removed.

Abstract: A current source with low temperature dependence includes a reference current source and a current mirror for copying the reference source current to at least one output branch. The reference current source and the current mirror may have opposite coefficients of temperature dependence and the current mirror may be a weighted mirror. The present invention is particularly applicable to the manufacture of integrated circuits.

Abstract: A storage device is provided. The storage device includes at least one memory having a parallel data bus and a parallel address bus; a first k-bit latch circuit having a parallel input and a parallel output, with the parallel input being connected to the data bus; a first k-bit shift register having a parallel input and a series output, with the parallel input being connected to the output of the first latch circuit; a second k-bit latch circuit having a parallel input and a parallel output, with the parallel output being connected to the data bus; and a second k-bit shift register having a series input and a parallel output, with the parallel output being connected to the input of the second latch circuit. In a preferred embodiment, a control circuit is coupled to the address bus, with the control circuit including address registers for storing as many address pointers as the number of k-bit shift registers.

Abstract: An analog voltage pulse generator, including a first break-over component of Shockley diode type to activate a rising edge of a pulse on an output terminal and a second component of thyristor type to block the first component and deactivate the pulse.

Abstract: A pair of complementary current sources includes a reference current source, and two complementary current mirrors having the same number of branches provided with bipolar mirror transistors. The bases of the mirror transistors of the complementary mirrors are connected to a common node. One of the complementary mirrors is connected to the reference source. An intermediate current mirror includes a first slave branch connected to the other complementary current mirror, a second slave branch connected to the reference source, and a master branch connected to the output of a trimming circuit for trimming the complementary currents for substantially equalizing the base currents of the mirror transistors of the complementary current mirrors. The input of the trimming circuit is connected to the common node.

Abstract: A voltage regulating device includes a comparison circuit for comparing a voltage proportional to an output voltage to a fixed reference voltage. The fixed reference voltage is received on a first input and the voltage proportional to an output voltage is received on a second input. The voltage regulating device further includes a variable resistance-forming circuit controlled by the output of the comparison circuit and disposed so that the output voltage remains substantially constant. The voltage regulating device may be supplied with a variable input voltage. The voltage regulating device further includes a second comparison circuit so that the output voltage remains substantially constant if the input voltage is greater than a threshold, and substantially equal to the input voltage if the input voltage is less than the threshold.

Abstract: Each memory cell of a memory device is connected to a bit line of a memory array and is associated with a read/rewrite amplifier connected between the bit line and a reference bit line. The bit line and the reference bit line are precharged to a predetermined precharge voltage. The content of a selected memory cell is read and refreshed based upon an associated read/rewrite amplifier. Between the precharging and the reading and refreshing, two capacitors previously charged to a charging voltage greater than the precharge voltage are respectively connected to the bit line and to the reference bit line.

Abstract: A semiconductor circuit that includes components and registration features that are electrically isolated from the components. The registration features form projecting parts that are uniformly distributed in the form of a matrix over at least part of the external surface of the circuit so as to define adjacent registration areas. In a preferred embodiment, the semiconductor circuit also includes metal registration features that are produced in at least one metallization level of the circuit. Also provided is a method of adjusting a tool so as to put it into a particular position with respect to the surface of a semiconductor circuit that has registration features defining adjacent registration areas. According to the method, an at least partial topographic record of the registration features on the surface of the semiconductor circuit is produced, and the registration features of the topographic record are brought into coincidence with reference features of a reference drawing.

Abstract: The integrated circuit comprises a semiconductor substrate SB supporting a memory cell PM of the DRAM type comprising an access transistor T and a storage capacitor TRC. The access transistor is made on the substrate, and the substrate includes a capacitive trench TRC buried beneath the transistor and forming the storage capacitor, the capacitive trench being in contact with one of the source and drain regions of the transistor.

Abstract: Processes are provided for fabricating a substrate having a silicon-on-insulator (SOI) or silicon-on-nothing (SON) architecture, which are applicable to the manufacture of semiconductor devices, especially transistors such as those of the MOS, CMOS, BICMOS, and HCMOS types. In the fabrication processes, a multilayer stack is grown on a substrate by non-selective full-wafer epitaxy. The multilayer stack includes a silicon layer on a Ge or SiGe layer. Active regions are defined and masked, and insulating pads are formed so as to be located around the perimeter of each of the active regions at predetermined intervals and placed against the sidewalls of the active regions. The insulating trenches are etched, and the SiGe or Ge layer is laterally etched so as to form an empty tunnel under the silicon layer. The trenches are filled with a dielectric. In the case of an SOI archiutecture, the tunnel is filled with a dielectric.

Abstract: In a memory integrated circuit comprising an internal circuit for the generation of a programming high voltage and comprising a first pad designed to receive a main logic supply voltage below five volts, a second specific supply pad is designed to supply the high voltage generation circuit. This enables the by application of a specific logic supply voltage with a voltage level greater than that of the main logic supply voltage in test mode or in application mode.

Abstract: A memory device includes a plurality of memory cells arranged as a matrix. Each memory cell includes a transistor and a capacitor connected in series. Each memory cell is linked to a bit line that connects the memory cells of a column. Each memory cell is also linked to a word line and to a third line. A gate of the transistor of a memory cell is linked to the word line, with each word line being linked to the gates of the transistors in a respective column. A third line is linked to the sources of the transistors of a row of memory cells. A bit line is linked to the capacitors of the transistors of a column. The voltage between the gate and the source of a transistor can thus be controlled via the word column and the third line.

Abstract: The component, fully integrated onto a monolithic substrate, includes a tuner, a demodulator, and a channel decoder. The overall filtering is carried out in two parts, a baseband analog filtering and a digital Nyquist filtering removing the information of adjacent channels. It outputs a stream of MPEG data.

Abstract: A method is for controlling reading of a dynamic random access memory (DRAM) including memory cells connected to a bit line of a memory plane of the DRAM and associated with a main reference cell connected to a reference bit line. The method may include reading and refreshing the contents of the memory cell and pre-charging the bit line, the reference bit line and the main reference cell for a subsequent read access. During reading and refreshing the memory cell, the main reference cell and a secondary reference cell connected to the bit line may be activated and, after having deactivated the two reference cells, they are pre-charged to a final pre-charge voltage. The final pre-charge voltage may be chosen to be less than or greater than (as a function of the NMOS or PMOS technology used, respectively) half the sum of a high-state storage voltage and a low-state storage voltage.

Abstract: The present invention relates to an amplifier having a fan-out which varies according to the time spent between an edge of a propagation signal and an edge of a logic input signal, the amplifier including several identical blocks, each block having an output stage connected between a data input and a data output, the data input and output being respectively connected to the data inputs and outputs of the other blocks; a delay element, the delay elements of all blocks being connected in series, the delay element of the first block receiving the synchronization signal; an edge detector, the input of which is connected to the input of the output stage; and means for inhibiting the propagation of the synchronization signal through the delay element when the signal generated by the edge detector of the preceding block is active and for activating the output stage and the edge detector when the signal generated by the delay element of the preceding block is active.

Abstract: A process for making a DRAM-type cell includes growing layers of silicon germanium and layers of silicon, by epitaxy from a silicon substrate; superposing a first layer of N+ doped silicon and a second layer of P doped silicon; and forming a transistor on the silicon substrate. The method also includes etching a trench in the extension of the transistor to provide an access to the silicon germanium layers relative to the silicon layers over a pre-set depth to form lateral cavities, and forming a capacitor in the trench and in the lateral cavities.