Abstract: A clock signal filtering circuit includes a bistable flip-flop and a controller for controlling state changes of the flip-flop. A first activation circuit activates the controller by edges of non-filtered clock signal pulses when their duration exceeds a first threshold. The first threshold is equal to a half-period corresponding to an upper frequency limit of the clock signal. A second activation circuit activates the controller by edges of filtered clock signal pulses delayed by an amount equal to a half period corresponding to a lower frequency limit of the clock signal. The clock filtering circuit transmits a filtered clock signal at a frequency within a specification interval, and at a duty cycle equal to 0.5 for a variety of different circumstances.

Abstract: The decimator filter includes at least three identical undersampled filters out-of-phase with each other and connected in parallel, and an interpolator connected to the output of each filter. The decimator filter includes a triple integrator having an output connected to each of the filters. Each filter defines a channel that includes in sequence an undersampling circuit, a differentiator and a multiplier. The outputs of the multipliers are connected to an adder. The input signals to each of these channels are offset by a delay equal to one period of the oversampled frequency. Each undersampling circuit and each multiplier has a second input receiving a signal from a state machine. The decimator filter improves the required phase extraction time and the precision defined in the ISDN U interface specifications. By combining the decimation filter and the extraction functions, a device is produced in a small area, which consequently, consumes low power.

Abstract: A method for determining r error detection bits that can be associated with a word of m bits to be coded, including the step of calculating the product of a vector with m components representative of the word of m bits to be coded and of a parity control matrix of dimension r×m. The parity control matrix is such that each column of matrix includes an odd number of “1s” greater than or equal to three. The present invention also relates to a method for determining a syndrome.

Abstract: The forming of a contact with a deep region of a first conductivity type formed in a silicon substrate. The contact includes a doped silicon well region of the first conductivity type and an intermediary region connected between the deep layer and the well. This intermediary connection region is located under a trench. The manufacturing method enables forming of vertical devices, in particular fast bipolar transistors.

Abstract: A method for extracting binary data conveyed by an incident signal is provided in which the binary data is coded in the form of a pulsatile signal whose pulses have variable lengths which are multiples of a base pulse length 1T. The incident signal may include a succession of transitions whose spacings are representative of the lengths of the pulses. The method may include an initialization phase in which the value of a base distance corresponding to the base pulse length is determined from the contents of the incident signal, and an extraction phase in which a set of reference values corresponding respectively to various multiples of the determined base distance is formulated. For a calculated current distance, the values of the data corresponding to this current distance may be determined from a comparison between the reference values and a current corrected distance.

Abstract: A MOSFET transistor comprising a gate made of silicon-germanium alloy, formed on a single crystal silicon substrate by means of a thin insulating layer, and drain and source regions implanted in the substrate on each side of the gate, characterized in that the gate comprises side regions presenting an increasing germanium percentage towards the sides of the gate facing the drain and source regions. Advantage: compensation of the short channel effect by locally decreasing the work function of the gate material near the drain and source regions.

Abstract: Process for producing electrical-connections on a semiconductor package containing an integrated-circuit chip and with an external protective layer having apertures that least partly expose metal electrical-connection regions, and semiconductor package provided with such metal electrical-connections. The apertures having walls are filled with a metal electrical-connection layer covering at least their walls. A metal solder drop is soldered to the connection layer so that it is not in contact with the external protective layer.

Abstract: A process produces at a predetermined metallization level at least one metal track (7) within an intertrack dielectric material (1). The process includes the steps of etching the intertrack dielectric material (1) so as to form a cavity (4) at the position of the track, depositing a conducting barrier layer (5) in the cavity (4), filling the cavity (4) with copper, and depositing a silicon nitride layer (8) on the predetermined metallization level. Between the barrier layer deposition step and the copper filling step, titanium is deposited on at least part of the barrier layer. This titanium will be transformed into TiSi2 (60) during the diffusion of the silicon from the silicon nitride layer (8).

Abstract: A non-volatile memory includes a floating gate extending in a substrate between source and drain regions. A channel region may be confined by two insulating layers. The invention is particularly applicable to EPROM, EEPROM, Flash and single-electron memories using CMOS technology.

Abstract: A semiconductor device includes multiple layers of integrated electronic components, and at least one electrical connection strip defining a fusible strip in one of the layers. An end of the fusible strip is connected to an integrated electronic component. An intermediate electrical connection and heat dissipation structure and a screen are disposed between the fusible strip and the integrated electronic component.

Abstract: A CMOS active pixel for image sensors has a photosensitive element, a capacitive feedback element with a capacitance CF, and four transistors, namely a first transistor, two reset transistors and a transistor for the selection of the pixel. These transistors are laid out and controlled in such a way that the first transistor is mounted as an amplifier during the pixel reset phase and as a follower during the read phase.

Abstract: An electrically programmable and erasable memory includes memory cells, with each memory cell including a floating gate transistor and an access transistor. The floating gate transistor has a first terminal connected to the access transistor. The memory includes circuitry for respectively applying during an erasing phase a first signal, and a second signal on the control gate and on a second terminal of the floating gate transistors of the memory cells to be erased. The circuitry also applies to the gates of the corresponding access transistors of the memory cells to be erased a signal having a voltage that is different from a voltage of the first signal and has a low or zero potential difference with respect to a voltage of the second signal. The memory is protected against the effects from a breakdown of the gate oxide of an access transistor.

Abstract: There is provided an integrated circuit having active components including junctions formed in a monocrystalline substrate doped locally, and at least one passive component situated above the active components. The integrated circuit includes a first insulating layer separating the active components and abase of the passive component, and a metal terminal for electrically connecting the passive component with at least one of the active components. The metal terminal is formed in the thickness of the first insulating layer and has a contact surface that projects from the limits of a junction of the one active component. In a preferred embodiment, the passive component is a capacitor. Also provided is a method of fabricating an integrated circuit that includes MOS transistors and an onboard memory plane of DRAM cells in a matrix.

Abstract: A &Dgr;&Sgr; modulator including a corrector unit for measuring an error due to differences in the operating parameters of individual components of an internal D/A converter, the corrector unit applying a correction of the error measured in this way to a digital signal, the modulator being characterized in that the internal D/A converter includes a number of individual components greater than the number necessary for internal conversion, and in that the corrector unit is suitable for extracting from the internal conversion process, in alternation, on each occasion a different component from the various individual components in order to measure the operating parameter error of the extracted component, while leaving a number of components in action that is sufficient for internal conversion.

Abstract: The present invention relates to a method of manufacturing an electrically programmable memory cell with a lateral floating gate with respect to the control gate, including the steps of forming an insulated control gate on an active area; forming a thin insulating layer around the control gate; successively depositing a thin layer of a conductive material and a layer of an insulating material; anisotropically etching the insulating material to form spacers of this material; and removing the portions of the thin conductive layer which are not coated with the spacers.

Abstract: The invention relates to a process for making a copper connection with a copper connection element in an integrated circuit comprising a damascene structure, with the connection element being covered successively with an encapsulation layer and at least one layer of dielectric material with a very low dielectric constant. The process includes the steps of etching the layer of dielectric material until the encapsulation layer is reached in order to obtain a connection hole opposite the connection element. A protective layer is then formed on the walls of the connection hole, with the protective layer preventing contamination of the dielectric layer from diffusion of copper. The protective and encapsulation layers are then etched at the bottom of the connection hole in such a way as to reveal the connection element. The connection hole is then filled with copper.

Abstract: The transistor includes an emitter region 17 disposed in a first isolating well 11, 150 formed in a semiconductor bulk. An extrinsic collector region 16 is disposed in a second isolating well 3, 150 formed in the semiconductor bulk SB and separated laterally from the first well by a bulk separator area 20. An intrinsic collector region is situated in the bulk separator area 20 in contact with the extrinsic collector region. An intrinsic base region 100 is formed which is thinner laterally than vertically and in contact with the intrinsic collector region and in contact with the emitter region through bearing on a vertical flank of the first isolating well facing a vertical flank of the second isolating well. An extrinsic base region 60 is formed which is substantially perpendicular to the intrinsic base region in the top part of the bulk separator area, and contact terminals C, B, E respectively in contact with the extrinsic collector region, the extrinsic base region, and the emitter region.

Abstract: A semiconductor package is provided that includes a flat leadframe having front and rear faces. The leadframe includes a central platform and elongate electrical connection leads distributed around this platform. Electrical connection wires connect the chip to the front face of the leads, and encapsulation means encapsulates the chip such that the rear face of the leadframe is visible. The electrical connection leads include an inner end part and an outer end part, the rear faces of the inner and outer end parts lie in the plane of the rear face of the leadframe, and the inner and outer end parts are connected by a branch whose rear face is set back with respect to the plane of the rear face of the leadframe so as to define a rear recess. The electrical connection wires are connected to the leads on the front face of their inner end part.

Abstract: A device for reading from a capacitive memory cell, including a comparator of the voltage stored in the memory cell with respect to a reference value, which exhibits a high input impedance; a refreshment means distinct from the comparator, the refreshment means having a low output impedance and being controlled by the comparator to impose a refreshment voltage to the memory cell; and means for controllably connecting the refreshment means to the memory cell.

Abstract: An integrated circuit includes an adjustment resistor, and at least one control transistor connected to a first voltage reference. An adjustment element is connected in parallel with the adjustment resistor for adjusting a combined electrical resistance of the adjustment element and the resistor. The adjustment element is connected to the control transistor, and includes a substrate, and a MOS transistor having a source, a drain, and a gate on the substrate. The MOS transistor defines a parasitic bipolar transistor with the substrate. The adjustment element further includes a first resistor connected between the substrate and the source, and a second resistor is connected between the substrate and the drain. A diode is connected in series with the second resistor between the substrate and the drain. The gate and the source of the MOS transistor are connected together with the MOS transistor being broken down so that the adjustable element forms an electrical resistance.