Abstract: A device and a method for refreshing the voltage of a circuit line that provides the capability of bringing the circuit line to a ground voltage or to a first voltage. The method provides storing the circuit line voltage in a capacitor; and controlling, by means of the stored voltage, a switch connecting the circuit line to a second voltage of absolute value greater than the first voltage, whereby the circuit line is set to the second voltage if, during the step of storing, the circuit line was at the first voltage.

Abstract: A receiver for a digital data transmission device for receiving a digital signal and comprising a free sampler physically taking samples rk of a received signal r(t) at a frequency at least equal to twice the received signal spectrum maximum frequency. A digital interpolator allows to derive a sequence of samples Xk calculated from said physical samples, according to a tuning parameter &tgr;. An equalizer adjustable to a set of equalization parameters e allows to process said interpolator output samples Xk. A computing unit simultaneously provides, in a single processing, values of &tgr; to the digital interpolator and values of the equalization parameters e to the digital equalizer. The invention also provides a method for digitally processing a received signal in a digital transmission device.

Abstract: The invention relates to a process for treating a portion of the surface of a substrate according to a first and second surface treatments which are different from each other and are intended respectively for a first group of regions and for a second group of regions of the surface portion, the two groups of regions being mutually complementary with respect to the surface portion, the process making it possible to use only a single operation of positioning a mask which differentiates the regions of the first and second groups of regions, using the same protective materials for the regions of each group of regions against the effects of the treatment intended for the regions of the other group of regions. Application to the fabrication of semiconductor products.

Abstract: The amount of charge passing through a measurement resistor connected to a rechargeable battery is measured by integrating in an analog manner an overall current. This overall current is equal to the sum of the resistor current and of a reference current that selectively takes one of two opposite values. The results of the integration are compared with a reference voltage, and one of two opposite values of the reference current is selected depending on each result of the comparison. The number of times where the positive opposite value of the reference current is selected furnishes an indication on the amount of charge during the integration time.

Abstract: A method of fabricating an integrated circuit including a monocrystalline silicon substrate, a layer of polycrystalline silicon on the top surface of the substrate and doped with at least two dopants with different rates of diffusion, in which method annealing is performed at a temperature and for a time such that a first dopant diffuses into a first zone and a second dopant diffuses into a second zone larger than the first zone.

Abstract: An indium-implanted transistor is provided. The transistor has a silicon channel region that includes a buried layer of an Si1−xGex alloy into which indium is implanted, with 10−5≦x≦4×10−1. A first method for fabricating an indium-implanted transistor is also provided. A multilayer composite film is produced on at least one region of a surface of a silicon substrate where a channel region of the transistor is to be formed. The multilayer composite film includes at least one Si1−xGex alloy layer, in which 10−5≦x≦4×10−1, and an external silicon layer. Indium is implanted into the Si1−xGex alloy layer, and fabrication of the transistor is completed so as to produce the transistor with a channel region that includes a buried Si1−xGex alloy layer. Additionally, a second method for fabricating an indium-implanted transistor is provided.

Abstract: The present invention relates to a one-time programmable (OTP) device including three fuses connected in parallel to a logic element which determines that the device is programmed when at least one of the fuses open. The present invention comprises a one-time programmable device that, before the one-time programmable device is programmed, provides, in response to a test signal, a simulation output signal that simulates an output signal that the one-time programmable device provides if the one-time programmable device is programmed.

Abstract: An analog-to-digital converter including a first module of the type having a series of processor stages, each of the stages performing two conversions of the signal output by the preceding stage, firstly an analog-to-digital conversion and secondly a digital-to-analog conversion, followed by subtracting the signal obtained from the output signal of the preceding stage to provide the analog output signal of the stage. The first module further assembles together the signals digitized by each stage (S1, . . . , Si) so as to provide an assembled digital signal (SN(nT) which represents the input signal (e(nT) of the converter in digital form.

Abstract: A method of manufacturing a bipolar transistor in an N-type semiconductor substrate, including the steps of depositing a first base contact polysilicon layer and doping it; depositing a second silicon oxide layer; forming in the first and second layers an opening; annealing to form a third thin oxide layer and harden the second oxide layer; implanting a P-type dopant; depositing a fourth silicon nitride layer; depositing a fifth silicon oxide layer and etching it; anisotropically etching the fifth, fourth, and third layers; performing cleanings during which the fifth layer is reetched and takes a flared profile; depositing a sixth polysilicon layer; and implanting an N-type dopant.

Abstract: A filtering circuit includes circuits for delivering first and second ramp-shaped signals when a logic signal to be filtered changes values, and includes logic circuits each with a switching threshold, for receiving the ramp-shaped signals. A memory unit delivers an output signal having a first value when outputs of the logic circuits have a first pair of values, and delivers a second value when the outputs of the logic circuits have a second pair of values. The filtering circuit may be applied to the filtering of an external clock signal in serial type memory devices.

Abstract: A transconductance stage includes at least one principal bipolar transistor having a base linked to an input terminal, a collector linked to an output terminal, and an emitter linked to a supply terminal through a resistor. At least one bipolar compensation transistor is connected in parallel to the principal transistor and linked without going through the resistor to the supply terminal. The value RE of the resistance is chosen so that RE*I0>VT/2, where VT is the thermal voltage and I0 is the quiescent current of the principal transistor.

Abstract: A MOS transistor with a drain extension includes an isolation block on the upper surface of a semiconductor substrate. The isolation block has a first sidewall next to the gate of the transistor, and a second sidewall that is substantially parallel to the first sidewall. The isolation block further includes a drain extension zone in the substrate under the isolation block, and a drain region in contact with the drain extension zone. The drain region is in the substrate but is not covered by the isolation block.

Abstract: An integrated memory location structure includes an isolated semiconductor layer between the source region and the drain region of a transistor, and between the channel region and the control gate of the transistor. The isolated semiconductor layer includes two potential well zones separated by a potential barrier zone under the control gate of the transistor. A write circuit biases the memory location structure to confine charge carriers selectively in one of the two potential well zones. A read circuit biases the memory location structure to measure the drain current of the transistor and determine therefrom the stored logic state imposed by the position of the charges in one of the potential well zones.

Abstract: Several peripheral entities are provided, with each peripheral entity being clocked by its own internal clock signal and being able to access a single-access memory. A priority entity is defined from among the peripheral entities, and the other peripheral entities are defined as auxiliary entities. A repetitive time frame is formulated, regulated by the internal clock signal of the priority entity, and subdivided into several groups of time windows that are allocated to the peripheral entities. One of the peripheral entities is a microprocessor that is disabled for a fixed duration after each memory access request.

Abstract: A device includes a capacitive structure including an input node and n output nodes, r integrated capacitors connected in series between two adjacent nodes, an integrated capacitor connected between the input node and ground, an integrated capacitor connected between the nth output node and ground, and r capacitive branches connected in parallel between ground and each node of the capacitive structure including the first output node and the (n−1)th output node. Each branch may include r+1 series-connected integrated capacitors. Furthermore, the integrated capacitors of the capacitive structure are theoretically identical. The device may also include a charge source for charging each node of the capacitive structure. Additionally, a measurement circuit may measure the charge at each of the nodes of the structure, and a comparison circuit may compare each measured nodal charge value with a theoretical nodal charge value while taking into account a predetermined nodal tolerance.

Abstract: A method of writing in page mode in an electrically erasable and programmable non-volatile memory includes an initialization phase of writing an information element for the selection of the page in a storage latch associated with a column of the non-volatile memory array, and the writing in a temporary memory of each of the data bits to be written in the page. A write phase includes the selection of rows of the non-volatile memory array according to the contents of the temporary memory. A page mode write circuit includes one latch per column of the non-volatile memory array to contain a page selection information element, and a control logic circuit to give the row selection signals as a function of the contents of the temporary memory in a phase for writing the column of the non-volatile memory array.

Abstract: Several audio/video streams are recorded in an interleaved manner on logical tracks of variable sizes. These audio/video streams are selected on the basis of an allocation table contained in a random access memory, and which describes the state of occupancy of the logical tracks. The logical tracks include elementary storage portions formed of integer numbers of sectors of the disk. A chaining of the various portions is performed during recording using the index numbers of the preceding and succeeding portions, as well as indications of unknown relationships which will be updated subsequently.

Abstract: A device for the comparison of two resistors is based upon analog information carried by currents. The device includes a measurement circuit for extracting the currents from the two resistors to be compared, and copies the currents to a parallel analog-digital converter that carries out the division of the extracted currents. The device converts the ratio of the extracted currents into a digital code that is the image of the ratio of the two resistors. The ratio is constantly re-updated as a function of environmental parameters of the circuit, such as the operating temperature. Also disclosed is a system for correcting the value of integrated compensated resistors. The system implements a device of this kind that does not use a reference voltage generator.

Abstract: A bias circuit integrated on a silicon wafer includes first, second and third branches. The first branch includes a first PMOS transistor in series with a first NMOS transistor. The second branch includes a second PMOS transistor, a second NMOS transistor and an electric resistor in series. The gate of the first NMOS transistor is connected to the gate of the second NMOS transistor. The first branch and the second branch are arranged as a current mirror. The third branch includes a third PMOS transistor in series with a third NMOS transistor. The third PMOS and NMOS transistors are arranged to maintain a drain voltage of the first PMOS transistor that is substantially identical to a drain voltage of the second PMOS transistor.

Abstract: An integrated circuit on a silicon substrate includes at least one polysilicon line and at least one antistatic contact connecting the polysilicon line to the silicon substrate. The antistatic contact includes a thin oxide layer between the polysilicon line and the silicon substrate. The thin oxide layer is of a sufficiently small thickness so that a current flows across it by the tunnel effect when the polysilicon line is brought, relatively to the substrate, to a voltage greater or less than determined thresholds.