Abstract: Semiconductor device comprising a metal circuit with two parts wound into spirals which are formed such that the branches of one of the parts and the corresponding branches of the other part lie on either side of a median longitudinal region and are symmetrical with respect to this region. A common junction connects the inner ends of the parts and lies across the median longitudinal region and the intermediate junctions between the branches of one of the parts pass above or below the intermediate junctions between the branches of the other part. A common external connection is connected to the common junction and separate external connection are connected respectively to the outer ends of the wound parts. The wound parts constitute two symmetrical metal windings formed between the common connection and the separate connection, respectively, and constituting symmetrical inductors.

Abstract: Disclosed is a device to control a circuit for the vertical deflection of a spot scanning a screen, and more particularly a control device whose output amplifier stage works in class D mode at the rate of a switching signal called a first switching signal. The control device has an internal auxiliary supply to generate the overvoltage needed for the fast flyback of the spot. This auxiliary power supply is a switching voltage generation circuit whose switching signal, called a second switching signal, is synchronous with the first switching signal. The present invention has been shown to used advantageously in television screens and/or computer screens.

Abstract: A method for reducing disturbing effects of coupling between a first transmission/reception device and a second transmission/reception device that are each connected to a subscriber line. According to the method, a signal received on a reception path of the first device is delayed by a delay equal to p times the transmission period. A coupling signal relating to a transmission path of a second device and the reception path of the first device is estimated based on a signal transmitted over the transmission path of the second device, and the delayed signal is ridded of the estimated coupling signal. Additionally, a device for transmitting/receiving a signal is provided. The device includes a memory coupled to a reception path for temporarily storing p symbols, a subtraction circuit, and a coupling estimation block.

Abstract: A dynamic random access memory device includes a memory plane including at least one first matrix of memory cells, a read/write amplifier connected to the end of each column of the matrix, and at least one pair of input/output lines associated with the matrix. The dynamic random access memory device also includes at least one cache memory stage connected to each amplifier and is disposed in the immediate vicinity of this amplifier. The cache memory stage includes a static random access memory cell connected between the read/write amplifier and the pair of input/output lines.

Abstract: A method for controlling the position of an optical beam incident on a track of a rotationally mobile carrier of information, such as a disc, includes picking up a beam reflected by the disc using an optical pick-up and determining a positioning error of the beam with respect to the track. The pick-up may include several photodetectors each providing an elementary signal, and the positioning error may be determined from the elementary signals. More precisely, from the elementary signals two sampled secondary signals whose mutual time gap is representative of the positioning error of the beam with respect to the track may be formulated. Furthermore, successive current values of the mutual time gap may be determined at the sampling frequency by searching at the sampling frequency for a successive current maximum of the cross-correlation function between the two sampled secondary signals. The present invention may be particularly applicable to multifunction digital disc (e.g., DVD) readers, for example.

Abstract: A circuit for controlling the storage of data in a memory element including a bistable device having a first input for receiving an address input and a second input for receiving a clock signal and circuitry for receiving the output of the bistable device and the clock signal and providing a write enable signal for the memory, the circuitry being arranged so that the write enable signal is enabled in response to a first transition in the clock signal from a first state to a second state and disabled in response to the clock signal making the next transition back to the first state, the first and next transitions being in the same clock cycle.

Abstract: One embodiment of the invention is directed to a method of forming a metallization level of an integrated circuit including the steps of forming metal areas of a metallization level laterally separated by a first insulating layer, removing the first insulating layer, non-conformally depositing a second insulating layer so that gaps can form between neighboring metal areas, or to obtain a porous layer. The removal of the first insulating layer is performed through a mask, to leave in place guard areas of the first insulating layer around the portions of the metal areas intended for being contacted by a via crossing the second insulating layer.

Abstract: A circuit produces a voltage for the erasure or programming of a memory cell. The circuit includes a capacitor, and a discharge circuit connected to a first terminal of the capacitor. The discharge circuit includes a first transistor, a drain of which is connected to the first terminal of the capacitor. The first transistor activates the discharge circuit when a discharge signal is received by a gate of the first transistor. The discharge circuit includes a slow discharge arm and a fast discharge arm parallel-connected to the source of the first transistor. The discharge circuit produces a low discharge current or a high discharge current for discharging the capacitor as a function of an operating mode selection signal.

Abstract: A microprocessor includes a counter having a counting input and a reset input. The counting input is coupled to a first terminal of the microprocessor for the selection of an operating mode thereof by application of a predetermined number of pulses to the first terminal. The reset input of the counter is driven by a control signal present on a second terminal of the microprocessor. The control signal is maintained by default at a first logic value ensuring the maintaining at zero of the counter during the initialization period by a circuit internal or external the microprocessor. Immunity against electromagnetic perturbations causing the microprocessor to enter into the test mode is provided.

Abstract: A method for manufacturing a DRAM cell including two active word lines having a drain region and distinct source regions, including, after the forming of insulated conductive lines, the steps of: depositing a first, then a second selectively etchable insulating layers; etching the second insulating layer to only maintain it above conductive lines; depositing and leveling a third insulating layer selectively etchable with respect to at least the second insulating layer; opening the first and third insulating layers to expose the drain region and an insulating trench; filling the previously-formed opening with a conductive material; polishing the entire structure; and depositing a fourth insulating layer, selectively etchable with respect to the third insulating layer.

Abstract: A voltage regulator having an output terminal provided for being connected to a load, including an amplifier having its inverting input connected to a reference voltage, and its non-inverting input connected to the output terminal, a charge capacitor arranged between the output terminal and a first supply voltage, first and second voltage-controlled switches each arranged to connect a second supply voltage and the output terminal, and a control means adapted to providing a voltage depending on the output voltage of the amplifier, on the one hand, to the gate of the first switch and, on the other hand, when the current flowing through the first switch reaches a predetermined threshold, to the gate of the second switch.

Abstract: A method of manufacturing an integrated circuit is provided. According to the method, first and second stop layers are deposited on a first dielectric layer that covers a first metallization level. The second stop layer is selectively etched with respect to the first stop layer, and the first stop layer is selectively etched with respect to the first dielectric layer. A second dielectric layer and a third stop layer are deposited. The third stop layer is selectively etched with respect to the second dielectric layer, and the first and second dielectric layers are selectively etched with respect to the stop layers so as to form trenches in the second dielectric layer and holes in the first dielectric layer. Additionally, an integrated circuit is provided that includes first and second metallization levels. A dielectric layer is located between the metallization levels, and a first stop layer is located between the dielectric layer and the second metallization level.

Abstract: A memory implementing an incremental address counter is sequentially read. An address jump includes detecting an address jump signal, incrementing the incremental address counter, and reading the content of the memory at the incremented address. The content read at the incremented address is transferred into the incremental address counter, and the content of the memory is read at the address contained in the incremental address counter.

Abstract: A device for regulating the amplitude of a chrominance signal includes a variable gain amplifier having an input receiving a sub-carrier signal, and an output providing a regulated sub-carrier signal. The gain of the amplifier is controlled by two regulation loops. The first regulation loop operates during the duration of the reference burst. The second regulation loop operates during the visible line. Each of these loops include an up/down counter controlled by a clock. A digital-analog converter has an input receiving the output signals from the first and second up/down counters. An output signal from the digital-analog converter is connected to the gain control of the amplifier. The digital-analog amplifier is controlled by another clock.

Abstract: A processor includes a program memory containing program instructions, and a processor core including several processing units and a central unit. The central unit, upon receipt of a program instruction, issues corresponding instructions to the various processing units. The processor core is clocked by a clock signal. A branching instruction received by the central unit, in the course of a current cycle, is processed in the course of the current cycle.

Abstract: A structure of protection of an area of a semiconductor wafer including a lightly-doped substrate of a first conductivity type against high-frequency noise likely to be injected from components formed in the upper portion of a second area of the wafer. The structure includes a very heavily-doped wall of the first conductivity type having substantially the depth of the upper portion. The wall is divided into segments, each of which is connected to a ground plane.

Abstract: Before a predetermined processing sequence, the integrated circuit detects the state of at least one timer. The circuit controls the activation of the timer if it is not activated, and disables itself if the timer is activated.

Abstract: A linear regulator of the type including a power MOS transistor of a first channel type, controlled by an amplifier having an output stage including, between two supply terminals, a resistor and a first MOS control transistor of a second channel type. The regulator further includes a start-up circuit having a switchable resistor in parallel on said first resistor.

Abstract: The present invention relates to a surge current limiting circuit of a filament lamp, meant to be connected in series between the filament and a switch that supplies an a.c. voltage, including at least one controllable active element, for limiting the current to a predetermined threshold value.

Abstract: The integrated circuit comprises a semiconductor substrate SB supporting a memory cell PM of the DRAM type comprising an access transistor T and a storage capacitor TRC. The access transistor is made on the substrate, and the substrate includes a capacitive trench TRC buried beneath the transistor and forming the storage capacitor, the capacitive trench being in contact with one of the source and drain regions of the transistor.