Abstract: An integrated circuit electrically is supplied with a voltage and includes an output MOS transistor having a gate driven by an output of a logic circuit and a circuit for biasing the gate of the output MOS transistor. The circuit for biasing the gate is provided for lowering a gate-source bias voltage of the output MOS transistor in a conductive state in relation to the gate-source bias voltage that would otherwise be provided by the output of the logic circuit. The present invention is particularly applicable to output stages for I2C buses.

Abstract: A process for making a DRAM-type cell includes growing layers of silicon germanium and layers of silicon, by epitaxy from a silicon substrate; superposing a first layer of N+ doped silicon and a second layer of P doped silicon; and forming a transistor on the silicon substrate. The method also includes etching a trench in the extension of the transistor to provide an access to the silicon germanium layers relative to the silicon layers over a pre-set depth to form lateral cavities, and forming a capacitor in the trench and in the lateral cavities.

Abstract: A generator producing a clock signal whose frequency depends on a control voltage includes a comparator for comparing a period of the clock signal with a desired period, and for providing at least one first control signal based upon the comparison. The generator includes a sampler circuit for sampling the first control signal, and for producing a first sampled control signal. The generator also includes a voltage generator for providing the variable control voltage as a function of the first sampled control signal.

Abstract: A pair of complementary current sources includes a reference current source, and two complementary current mirrors having the same number of branches provided with bipolar mirror transistors. The bases of the mirror transistors of the complementary mirrors are connected to a common node. One of the complementary mirrors is connected to the reference source. An intermediate current mirror includes a first slave branch connected to the other complementary current mirror, a second slave branch connected to the reference source, and a master branch connected to the output of a trimming circuit for trimming the complementary currents for substantially equalizing the base currents of the mirror transistors of the complementary current mirrors. The input of the trimming circuit is connected to the common node.

Abstract: The compressed data of an auxiliary stream of data, defining an auxiliary image, is decoded on the fly during the display of each main image into which this auxiliary image is to be inset. The data is decoded to deliver luminance and chrominance values intended to be mixed with the luminance and chrominance values of the counterpart pixels of the main image being displayed, in succession during each decoding of the auxiliary image and for the successive pixels of this auxiliary image.

Abstract: An integrated circuit is provided that includes a first internal circuit using a first internal clock signal whose first edges are active. The first internal circuit includes a test cell having an input and an output, a first transmission line connected to the input of the test cell, and a second transmission line connected to the output of the test cell. The test cell includes first and second latches and a selection circuit. The first latch stores either information on the first transmission line or information received from another test cell, and the second latch selectively receives the information stored in the first latch. The selection circuit provides to the second transmission line either the information on the first transmission line or the information stored in the second latch. The test cell also includes means for storing the information on the first transmission line in the second latch during second edges of the first internal clock signal when the test cell is not in test mode.

Abstract: A high voltage switching device includes a switching circuit for switching a high voltage to an output line and for providing a control signal. The high voltage switching device also includes a switching transistor connected to the switching circuit for switching a low voltage to the output line based upon the control signal. The output signal is controlled by a control circuit that sets up a control loop between the drop in the gate voltage level of the switching transistor and the voltage level of the output line that is controlled by the switching circuit.

Abstract: A configurable electronic circuit having configuration nodes is provided. Each of the configuration nodes is coupled to corresponding first circuitry that is non-modifiable during configuration and second circuitry that is modifiable during the configuration. The non-modifiable first circuitry selectively imposes one of at least a first potential and a second potential on the configuration node prior to configuration, and the modifiable second circuitry allows modification of the potential imposed on the configuration node by the non-modifiable first circuitry. In a preferred embodiment, the modifiable second circuitry includes at least one fuse that is in an intact state before configuration and that can be changed to a destroyed state after configuration. This enables a reduction in the number of fuses that have to be destroyed during the configuration of the circuit. Also provided is an information processing system that includes at least one configurable electronic circuit having configuration nodes.

Abstract: A random signal generator uses a folded MOS transistor, whose drain-source current includes a random component, as an electronic noise source. The random signal generator generates a random binary signal from the random component. The invention may be applied, in particular, to smart cards.

Abstract: The disclosure relates to detectors of the level of supply voltage in an integrated circuit. The disclosed detector is designed to detect the crossing of low levels of supply voltage. It comprises a first arm to define a first reference voltage and a second arm to define a second reference voltage, these two reference voltages varying differently as a function of the supply voltage and their curves of variation intersecting for a value of the supply voltage located close to a desired threshold. A comparator receives the two reference voltages. The first arm has a resistive divider bridge, an intermediate connector of which constitutes the first reference voltage. The second arm comprises a resistor series-connected with a native P type MOS transistor, the point of junction of this resistor and this transistor constituting the second reference voltage. A non-linear element may be parallel-connected to the resistor which constitutes the first reference voltage.

Abstract: A method for fabricating an integrated circuit. According to the method, a second dielectric layer is formed above a first dielectric layer, and holes and/or trenches are etched in the first and second dielectric layers. The holes and/or trenches are filled with metal in order to form electrical connection elements, and at least a third dielectric layer is formed. Holes and/or trenches are selectively etched in the third dielectric layer and the second dielectric layer with respect to the first dielectric layer and the elements, in order to control the depth of the etch. Additionally, there is provided an integrated circuit of the type having metallization levels separated by dielectric layers and metallized vias connecting lines of different metallization levels. The integrated circuit includes first and second metallization levels, first and second superposed dielectric layers located above the first metallization level, and a third dielectric layer located above the first and second dielectric layers.

Abstract: The present invention relates to a method of vapor phase epitaxial deposition of silicon on a silicon substrate including areas containing dopants at high concentration among which is arsenic, while avoiding an autodoping of the epitaxial layer by arsenic, including the steps of performing a first thin epitaxial deposition, then an anneal; the conditions and the duration of the first epitaxial deposition and of the anneal being such that the arsenic diffusion length is much lower than the thickness of the layer formed in the first deposition; and performing a second epitaxial deposition for a chosen duration to obtain a desired total thickness.

Abstract: A method for adjusting a duration of an internal timing signal in an integrated circuit with a value close to a typical value of the duration may include activating the internal timing signal in the integrated circuit and sequentially sending calibration values to an input of the integrated circuit. The expiration of the internal timing signal may determine the last calibration value received or being received, and the calibration data may be applied to a device for adjusting the duration of the internal timing signal.

Abstract: The control device includes an output amplifier stage ETS supplied by a main supply for controlling the vertical scan of the spot, and an auxiliary supply capable of delivering an overvoltage and a first two-way switch connected to the output stage and controllable to allow the overvoltage to be delivered to the vertical deflection circuit for flyback of the spot. The output stage is a stage having at least two transistors which are capable of operating in alternating switching mode, at least for control of the vertical scan of the spot, this stage being associated with a smoothing filter connected to the common terminal of the two transistors. The device includes a second two-way switch connected between a first transistor of the output stage and a first terminal of the main supply and controllable to prevent delivery of the overvoltage during control of the vertical scan of the spot.

Abstract: A process for forming an electrical resistance in an integrated MOS transistor includes applying a first voltage to the source and gate of the MOS transistor, and applying a second voltage to the drain of the MOS transistor. A prebiasing voltage is applied to the substrate of the MOS transistor to make the base/emitter junction of a parasitic bipolar transistor of the MOS transistor conduct. The first and second voltages are capable of initiating a breakdown of the MOS transistor by an avalanche of the drain/substrate junction, an irreversible breakdown of the drain/substrate junction, and a short circuit between the drain and the source.

Abstract: A circuit to detect and record the occurrence of a surge in the supply voltage applied to an integrated circuit includes a detection circuit for providing a control signal if a voltage surge is detected. The circuit also includes a high voltage circuit, which produces a high programming voltage from the supply voltage if a voltage surge is detected, and a memory cell. The detection circuit may include a capacitor divider bridge, a voltage source, and a comparator. The circuit is particularly advantageous for use with electrically programmable memories.

Abstract: A method of manufacturing an integrated circuit is provided. According to the method, first and second stop layers are deposited on a first dielectric layer that covers a first metallization level. The second stop layer is selectively etched with respect to the first stop layer, and the first stop layer is selectively etched with respect to the first dielectric layer. A second dielectric layer and a third stop layer are deposited. The third stop layer is selectively etched with respect to the second dielectric layer, and the first and second dielectric layers are selectively etched with respect to the stop layers so as to form trenches in the second dielectric layer and holes in the first dielectric layer. Additionally, an integrated circuit is provided that includes first and second metallization levels. A dielectric layer is located between the metallization levels, and a first stop layer is located between the dielectric layer and the second metallization level.

Abstract: Processes are provided for fabricating a substrate having a silicon-on-insulator (SOI) or silicon-on-nothing (SON) architecture, which are applicable to the manufacture of semiconductor devices, especially transistors such as those of the MOS, CMOS, BICMOS, and HCMOS types. In the fabrication processes, a multilayer stack is grown on a substrate by non-selective full-wafer epitaxy. The multilayer stack includes a silicon layer on a Ge or SiGe layer. Active regions are defined and masked, and insulating pads are formed so as to be located around the perimeter of each of the active regions at predetermined intervals and placed against the sidewalls of the active regions. The insulating trenches are etched, and the SiGe or Ge layer is laterally etched so as to form an empty tunnel under the silicon layer. The trenches are filled with a dielectric. In the case of an SOI archiutecture, the tunnel is filled with a dielectric.

Abstract: An electronic device for computing a Fourier transform having a pipeline architecture includes at least one processing stage with a radix equal to 4. Each processing stage includes elementary processing for performing process operations for Fourier transforms of size equal to 4 on data blocks. Each processing stage also includes an elementary storage that includes a random access memory. In particular, the random access memory is a single-access memory with a storage capacity equal to 3N/4 data bits. The size of the data block processed by this stage is equal to N.

Abstract: A circuit for providing a reference voltage, including a first transistor of bipolar type, the emitter of which provides the reference voltage and the collector of which is connected to a first supply pole, a second MOS-type transistor, the drain of which is connected to the base of the first transistor and the source of which is connected to a second supply pole, a control block, an output of which is connected to the gate of the second transistor and an input of which is connected to the emitter of the first transistor, a capacitor connected to the output of the control block and coupled to the first supply pole via a first impedance, and a second impedance connected on the one hand to the second transistor and on the other hand to the connection point between the capacitor and the first impedance.