Abstract: A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched away. In a phase change memory cell having a stack of a chalcogenide material layer and an AlCu layer, the AlCu layer is etched first using a chlorine based plasma at a higher temperature; then the lateral walls of the AlCu layer are passivated; and then the chalcogenide material layer is etched at a lower temperature.

Abstract: Protecting the devices of a charge pump includes the connection of a high-voltage transistor between the output node of the charge pump and the load being supplied, and in controlling this transistor with a fraction of the output voltage of the charge pump. This control is accomplished by connecting the control node of the high-voltage transistor to a node of connection between two stages of the multi-stage charge pump onto which a fraction of the controlled output voltage of the multi-stage charge pump is produced. The high-voltage output transistor protects the low voltage devices of the multi-stage charge pump, by preventing the controlled output voltage from undergoing excessively abrupt variations, that could damage the transistors of the last stage of the charge pump.

Abstract: A micro-electro-mechanical variable capacitor has a first and a second electrode, and a dielectric region arranged on the first electrode. An intermediate electrode is arranged on the dielectric region. The first electrode is fixed and anchored to a substrate, and the second electrode includes a membrane movable with respect to the first electrode according to an external actuation, in particular an electrostatic force due to an actuation voltage applied between an actuation electrode and the first electrode. The second electrode is suspended over the intermediate electrode in a first operating condition, and contacts the intermediate electrode in a second operating condition; in particular, in the second operating condition, a short-circuit is established between the second electrode and the intermediate electrode.

Abstract: A non-volatile memory electronic device integrated on a semiconductor substrate includes non-volatile memory cells organized in a matrix, and circuitry associated therewith. Each memory cell includes a gate electrode projecting from the semiconductor substrate. Source and drain regions are formed in the semiconductor substrate and aligned with the gate electrodes. At least one portion of the gate electrodes are insulated from each other by air-gaps which are closed on top by a third non-conforming dielectric layer.

Abstract: A process and a system is described for generating an MPEG output bitstream starting from an MPEG input bitstream. The output bitstream has a resolution modified with respect to the resolution of the input bitstream. In the input bitstream, first portions that substantially do not affect and second portions that do affect resolution variation are distinguished. The second portions are then subjected to a function of modification of the resolution obtained by filtering the second portions in a domain of the discrete cosine transform, and then are transferred to the output bitstream. A corresponding computer program product is also provided.

Abstract: A bit-line selection circuit for a memory device includes a decoding line and a dummy line: The decoding line is between a regulated voltage node, and a programming voltage node generating a programming voltage for a cell in the memory device. The decoding line includes at least one input transistor connected to the regulated voltage node, and is controlled by an enable/disable signal. The dummy line is identical to the decoding line, and is controlled by the enable/disable signal. An equalization circuit is connected between the decoding and dummy lines for setting a current in the dummy line equal to a current in the decoding line. A regulating circuit regulates the programming voltage generated at the programming voltage node in the decoding line. The regulating circuit has a first input for receiving a reference voltage, a second input for receiving a sensed voltage on the programming voltage node in the dummy line, and an output for providing the enable/disable signal.

Abstract: A planar inertial sensor includes a first region and a second region of semiconductor material. The second region is capacitively coupled, and mobile with respect to the first region. The second region extends in a plane and has second portions, which face respective first portions of the first region. Movement of the second region, relative to the first region, in any direction belonging to the plane modifies the distance between the second portions and the first portions, which in turn modifies a value of the capacitive coupling.

Abstract: The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH4) and dichlorosilane (SiH2Cl2) at 10-90 sccm—standard cube centimeters per minute—for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H2/N2 plasma at 200-800 sccm, for 10-90 s, preferably about 40 s.

Abstract: A method of diagnosing misfire or partial combustion conditions in an internal combustion engine without using a phonic wheel discriminates the combustion conditions with soft-computing techniques directly exploiting a combustion pressure signal generated by a common pressure sensor installed in the cylinder. There exists an exploitably close correlation between the instantaneous values of the internal cylinder pressure and the occurrence of misfire or partial combustion conditions, and thus the cylinder pressure signal may be reliably used for diagnosing misfires or partial combustions in functioning conditions of the engine.

Abstract: A microfluidic system through which a solution of at least an oxidable compound is fed to a feed manifold of an energy converting electrochemical device includes a flow connector. The flow connector includes a silicon platform having a bottom side and an opposing top side, and through holes extending therethough. The silicon platform includes first and second channels defined on the bottom side for communicating with the through holes. The second channel forms an inlet for the feed manifold of the energy converting electrochemical device when the bottom side of the silicon platform is coupled to a flat coupling area of the device. A micropump module is coupled to the top side of the silicon platform for communicating with the through holes in the first and second channels. First and second supply cartridges are coupled to the top side of the silicon platform for communicating with the through holes in the first channel.

Abstract: A process for the fabrication of an inertial sensor with failure threshold includes the step of forming, on top of a substrate of a semiconductor wafer, a sample element embedded in a sacrificial region, the sample element configured to break under a preselected strain. The process further includes forming, on top of the sacrificial region, a body connected to the sample element and etching the sacrificial region so as to free the body and the sample element. The process may also include forming, on the substrate, additional sample elements connected to the body.

Abstract: An injection control method for controlling a “common rail” fuel injection system in a diesel engine is described. The method includes the following steps: an initializing step for acquiring engine control parameters; and a main adjustment cycle for adjusting operational variables of the engine. The injection control method also includes an interrupting step for adjusting an injection procedure proper of the injection system by variation of all the characteristic parameters of the injection procedure. Also described is an injection control system for a diesel engine based on the above method.

Abstract: An application-specific embeddable flash memory having three content-specific I/O ports and delivering a peak read throughput of 1.2 GB/s. The memory is combined with a special automatic programming gate voltage ramp generator circuit having a programming rate of 1 Mbyte/s for non-volatile storage of code, data, and embedded FPGA bit stream configurations. The test chip uses a NOR-type 0.18 ?m flash embedded technology with 1.8V power supply, two poly, six metal and memory cell size of 0.35 ?m2.

Abstract: An OLED (organic light-emitting diode) passive-matrix display includes a display portion and a driver portion. The display portion includes a matrix of OLEDs for displaying information. The driver portion includes a monitor circuit and a voltage adjusting circuit. The voltage adjusting circuit has a power-up portion that generates a supply voltage based on a reference voltage. In response to an indication to switch modes, the voltage adjusting circuit switches to an operational mode wherein the supply voltage is generated based on the maximum voltage drop read across the OLEDs.

Abstract: A process for forming a tapered trench in a dielectric material includes the steps of forming a dielectric layer on a semiconductor wafer, and plasma etching the dielectric layer; during the plasma etch, the dielectric layer is chemically and physically etched simultaneously.

Abstract: A memory, particularly but not limitatively a flash memory, comprises at least one data storage area comprising a plurality of data storage locations, and an access circuitry for accessing the data storage locations for either retrieving or altering a data content thereof, depending for example on a memory user request. The memory includes at least one first user-configurable flag element and a second user-configurable flag element. Both the at least one first and the second flag elements are used by a user to set a protected state of the respective data storage area against alteration of the content of the data storage locations thereof. The protected state defined by setting the first flag element is user-removable, i.e., it can be removed by request from the user, so as to enable again the alteration of the content of the data storage area.

Abstract: A two-phase charge pump is provided that is controlled by first and second clock signals in phase-opposition. The charge pump has a sequence of cascade-connected stages. Each stage includes a capacitive element driven by one clock signal such that capacitive elements of adjacent stages are driven by different clock signals, a pass transistor that transfers electric charge to the capacitive element from the capacitive element of a previous stage, a first biasing circuit that enables the pass transistor during a first phase of the one clock signal, and a second biasing circuit that disables the pass transistor during a second phase of the one clock signal. Also provided is a two-phase charge pump having two branches that each include a sequence of such cascade-connected stages, with each stage of one branch having a corresponding stage in the other branch. A method of operating two-phase charge pumps is also provided.

Abstract: A method to determine a back electromotive force induced in a coil of a voice-coil motor by its motion. The motor is driven in a discontinuous mode by commanding alternating on-phases and off-phases (tristate). A drive current flowing in the coil or a drive voltage on the coil at an end of an on-phase is sensed. An amplitude of a voltage disturbance induced in the coil by mutual induction between a permanent magnet of the voice-coil motor and the moving coil as a function of the sensed drive current or drive voltage is estimated. Voltage on the coil is sensed during a following off-phase with no current flowing in the coil. The back electromotive force induced in the moving coil is determined as a difference between the sensed voltage and the estimated amplitude of the voltage disturbance.

Abstract: An integrated device including a functional circuitry and a built-in self testing circuit for executing a structured test on the functional circuitry is proposed. The functional circuitry includes means for receiving input test values from the built-in self testing circuit and returning output test values to the built-in self testing circuit. In the solution of the invention, the built-in self testing circuit includes a memory for storing starting test values and expected test values, means for generating the input test values according to the starting test values, and means for determining a result of the structured test according to a comparison between the output test values and the expected test values.

Abstract: A silicon bipolar VCO implementing a double-coupled transformer is disclosed. The VCO circuit, which is suitable in the field of integrated RF circuits, has been integrated into a universal LNB having a down-converter block and PLL merged into a single die and implemented in silicon bipolar technology. The integrated transformer is formed by three turns of stacked metal layers, where the topmost metal layer is employed for the resonator inductance. The VCO is missing conventional biasing resistors and decoupling capacitors, thus improving phase noise and tuning range performance.