Abstract: A method and a corresponding decoder for decoding a Manchester encoded binary data signal includes receiving the Manchester encoded binary data signal having a first sequence of central bit transitions and a second sequence of initial bit transitions. A local clock signal is generated, and the central bit transitions of the Manchester encoded binary data signal are determined. Determination of the central bit transitions includes measuring the time interval elapsing between a pair adjacent central bit transitions, expressed as a number N of cycles of the local clock signal, and selecting each successive central bit transition based upon the time interval N measured between the pair of central bit transitions which immediately precede the successive central bit transition.

Abstract: A device for measuring the relative angular position of two bodies with respect to a point is provided with a first measuring element and a second measuring element, relatively movable with respect to one another and connectable to a first body and a second body, respectively; the first measuring element includes a first inclination sensor, which has a first detection axis and supplies a first inclination signal, correlated to a first angle of inclination of the first detection axis with respect to a reference axis, and the second measuring element includes a second inclination sensor, which has a second detection axis and supplies a second inclination signal, correlated to a second angle of inclination of the second detection axis with respect to the reference axis.

Abstract: A process manufactures an interpoly dielectric layer for non-volatile memory cells of a semiconductor device with an interpoly dielectric layer. The process begins with forming the tunnel oxide, and hence the amorphous or polycrystalline silicon layer, using conventional techniques. After the amorphous or polycrystalline silicon layer is surface cleansed and passivated, the surface of the polycrystalline layer is nitrided directly by using radical nitrogen. This is followed by the formation of the interpoly dielectric, either as an ONO layer or a single silicon layer, by means of the CVD technique. Masking to define the floating gate may be performed immediately before or after the direct nitridation step is carried out. The equivalent electrical thickness of the interpoly dielectric, obtained by combining the nitride oxide layer and by the following dielectric, does not exceed 130 Angstroms in either the ONO layer or the single silicon layer embodiment.

Abstract: An image generating pipeline (IGP) includes a digital signal processor for implementing processing blocks connected in cascade for processing an input image that includes an array of raw pixel values to generated a color image that includes an array of reconstructed pixel values. A memory is coupled to the digital signal processor for storing the raw pixel values and the array of reconstructed pixel values. The digital signal processor includes a data cache, and the raw pixel values of the input image are processed through the processing blocks in sub-arrays having fractional dimensions of the pixel-dimensions of the whole image array. The sub-arrays include an input sub-array of pixel values being loaded from the memory for defining a working window.

Abstract: A process for manufacturing a MOS device is described. The process comprising: providing a body of semiconductor material having a surface; forming a stack on the surface of the body, the stack including a first polysilicon region, an intermediate dielectric region arranged on top of the first polysilicon region, and a second polysilicon region arranged on top of the intermediate dielectric region; depositing a passivation layer on top of and laterally to the stack; and forming at least one electrical connection region in direct electrical contact with the first and second polysilicon regions, wherein the electrical connection region is formed laterally with respect to both the first and second polysilicon regions.

Abstract: A protection device protects a driving device of an electric motor with at least three phases and at least three windings and the driving device comprises a power stage suitable for driving directly said at least three windings. The driving device is suitable for actuating a motor brake operating phase and comprises detectors suitable for detecting the currents that run in the windings of the motor. The protection device comprises selectors suitable for selecting the currents having a single direction between said detected currents and a deactuator suitable for deactuating the power stage during said motor brake operating phase when the sum of the currents having a single direction is greater than a reference current.

Abstract: A method for simultaneously programming a pre-established number of memory cells includes setting an initial number of memory cells to be simultaneously programmed equal to the pre-established number, and subdividing the initial number of memory cells to be programmed into subsets of memory cells. A program operation for simultaneously programming all the memory cells of each subset of memory cells is executed by forcing a current through all the memory cells of each subset of memory cells. The current has a program voltage associated therewith. The program voltage is compared to a threshold voltage during execution of the program operation. The method further includes stopping execution of the program operation if the threshold voltage is surpassed, reducing the initial number of memory cells to be simultaneously programmed, and restarting from the subdividing.

Abstract: An integrated power device includes a semiconductor body of a first conductivity type comprising a first region accommodating a start-up structure, and a second region accommodating a power structure. The two structures are separated from one another by an edge structure and are arranged in a mirror configuration with respect to a symmetry line of the edge structure. Both the start-up structure and the power structure are obtained using MOSFET devices. Both MOSFET devices are multi-drain MOSFET devices, having mesh regions, source regions and gate regions separated from one another. In addition, both MOSFET devices have drain regions delimited by columns that repeat periodically at a fixed distance. Between the two MOSFET devices there is an electrical insulation of at least 25 V.

Abstract: A device calibrates the frequency of an oscillator. The oscillator has first and second inputs and generates an output frequency responsive to a first voltage signal at the first input. The calibration device generates a calibration signal applied at the second input of the oscillator for calibrating its output frequency and comprises a counter. The counter has a first input frequency proportional to a reference frequency and a second input frequency proportional to the output frequency. The counter counts the time window number given by the ratio of the second to first frequencies. The device comprises a comparator that compares the counted time window number with a prefixed time window number. The calibration device changes the value of the calibration signal if the counted time window number is different from the prefixed time window number and until the counted time window number is equal to the prefixed time window number.

Abstract: A power amplification device includes an input for receiving a signal having a desired frequency band. The signal also has a transfer function associated therewith. The power amplification device further includes power amplification circuitry having an order greater than or equal to one, and signal amplifiers connected between the input and the power amplification circuitry. Each signal amplifier has a predetermined gain so that zeros of the transfer function are outside the desired frequency band.

Abstract: A memory device formed by an array of memory cells extending in rows and columns. The device is formed by a plurality of N-type wells extending parallel to the rows; each N-type well houses a plurality of P-type wells extending in a direction transverse to the rows. A plurality of main bitlines extend along the columns. Each P-type well is associated to a set of local bitlines that extend along the respective P-type well and are coupled to the drain terminals of the cells accommodated in the respective P-type well. Local-bitlines managing circuits are provided for each P-type well and are located between the main bitlines and a respective set of local bitlines for controllably connecting each local bitline to a respective main bitline.

Abstract: An apparatus for washing quartz parts, particularly for process equipment used in semiconductor industries, includes a process unit that is suitable to perform washing, a unit for managing washing and rinsing fluids, and a control unit, the units being mutually separate, the process unit having a bell-shaped element that is suitable to enclose hermetically the quartz parts to be washed, the quartz parts being inserted vertically in the bell-shaped element.

Abstract: A method regulates the time constant matching of a DC/DC converter phase, further to a variation of a load applied to an output of said phase. Such phase being associated with a coil network, with a series RL circuit and a reading network 10, with a series RC circuit connected in parallel to the coil network. The method includes an acquisition step, suitable to acquire the trend of a voltage detected across the capacitance CD of the reading network 10, transforming it into a current trend, a detection step suitable to identify a variation above a certain threshold value of said current trend, an identification step, enabled by said detection step, suitable to determine a slope of said current trend and a regulation step suitable to adapt the value of said resistance RD based on said slope determined by said identification step.

Abstract: An electronic power device of improved structure is fabricated with MOS technology to have a gate finger region and corresponding source regions on either sides of the gate region. This device has a first-level metal layer arranged to independently contact the gate region and source regions, and has a protective passivation layer arranged to cover the gate region. Advantageously, a wettable metal layer, deposited onto the passivation layer and the first-level metal layer, overlies said source regions. In this way, the additional wettable metal layer is made to act as a second-level metal.

Abstract: A method is described for manufacturing non-volatile memory cells on a semiconductive substrate having active areas bounded by portions of an insulating layer. A thin layer of tunnel oxide is formed and a first layer of conductive material is then deposited. A plurality of floating gate regions are defined by forming stripes of shielding material only above pairs of alternated active areas. Spacers of a selective material are defined with respect to the shielding material and of small width at will in the shelter of the side walls of the stripes thus defined. A shielding material is also deposited on the active areas which lacked it. The formation of the floating gate is completed by leaving the definition of the distance between the floating gate regions to the spacers.

Abstract: A semiconductor substrate has active areas bounded by portions of an insulating layer. A thin layer of tunnel oxide is formed on the substrate and a first layer of conductive material is then deposited. Non-volatile memory cells are manufactured thereon by defining floating gate regions. The definition of these floating gate regions involves defining the first layer of conductive material in order to form a plurality of alternated stripes above pairs of active areas alternated by active areas lacking stripes. Spacers are then formed in the shelter of the side walls of the alternated stripes. A second layer of conductive material is then deposited together with the first layer of conductive material. The spacers are then selectively removed.

Abstract: A semiconductor electronic device is described comprising a die of semiconductor material having a plurality of contact pads electrically connected to a support for example through interposition of contact wires, said plurality of contact pads comprising signal pads and power pads, the device being characterized in that said signal pads are implemented on the die of semiconductor material with a mutual pitch lower than the pitch between said power pads.

Abstract: A device integrated in a semiconductor substrate of a first type of conductivity being crowned by a semiconductor layer of a second type of conductivity comprising a voltage controlled resistive structure and an IGBT device, wherein the resistive structure comprises at least one substantially annular region of the first type of conductivity which surrounds a portion of the semiconductor layer.

Abstract: The amount of fuel to be injected in each cylinder of a multi-cylinder spark ignition internal combustion engine may be determined with enhanced precision if the fuel injection durations are determined as a function of the sensed mass air flow in all the cylinders of the engine, instead of considering only the air flow in the same cylinder. This finding has led to the realization of a more efficient method of controlling a multi-cylinder spark ignition internal combustion engine and a feedforward control system.

Abstract: A Darlington differential amplifier includes a differential pair of Darlington transistors, with each pair including a first transistor and a second transistor connected in cascade to the first transistor. The first transistor is controlled by an externally generated voltage and drives the second transistor. The first and second transistors each include first and second conducting terminals, with the first conducting terminals being connected together and forming an output node of the amplifier. A first degeneration impedance is connected between the second conduction terminals of the second transistors in the pair of Darlington transistors. A second degeneration impedance is connected between the second conduction terminals of the first transistors in the pair of Darlington transistors for reducing harmonic distortion of the amplifier.