Abstract: A method for managing bad memory blocks of a nonvolatile-memory device, in which the available memory blocks are divided into a first set, formed by addressable memory blocks that are to be used by a user, and a second set, formed by spare memory blocks that are to replace bad addressable memory blocks, and in which the bad addressable memory blocks are re-mapped into corresponding spare memory blocks. The re-mapping of the bad addressable memory blocks envisages: seeking bad spare memory blocks; storing the logic address of each bad spare memory block in a re-directing vector in a position corresponding to that of the bad spare memory block in the respective set; seeking bad addressable memory blocks; and storing the logic address of each bad addressable memory block in a free position in the re-directing vector.

Abstract: A method controls operation of a network wherein at least one coded information stream is delivered to at least one user via at least one link exposed to variable operating conditions. The method includes the steps of: monitoring the operating conditions of the at least one link, and selectively transcoding the at least one coded information stream by selectively varying at least one transcoding parameter as a function of the operating conditions monitored. The monitoring operating conditions of the at least one link includes evaluating a set of cost functions related to an available bit rate and to complexity of said coded information stream and the selective variation of at least one transcoding parameter includes selecting among a plurality of transcoding levels associated to different values of quantization, resolution and frame rate.

Abstract: The electric charge transferred in a charge transfer phase from the pump capacitor to the tank capacitor is diminished by reducing the amplitude of the voltage swing on the transfer capacitor proportionally to the current to be supplied. This is done by limiting the maximum voltage on the pump capacitor to a certain value. This maximum value is calculated to make the voltage on the transfer capacitor reach a certain minimum voltage at the end of the charge transfer phase. A charge pump generator includes a driving circuit that isolates the pump capacitor when the voltage on it reaches the maximum value.

Abstract: A content addressable memory cell for a non-volatile content addressable memory, including a non-volatile storage element for storing a content digit, a selection input for selecting the memory cell, a search input for receiving a search digit, and a comparison circuit arrangement for comparing the search digit to the content digit and for driving a match output of the memory cell so as to signal a match between the content digit and the search digit. The non-volatile storage element include at least one phase-change memory element for storing in a non-volatile way the respective content digit.

Abstract: A process for manufacturing an array of cells, including: implanting, in a body of semiconductor material of a first conductivity type, a common conduction region of the first conductivity type; forming, in the body, above the common conduction region, a plurality of active area regions of a second conductivity type and a first doping level; forming, on top of the body, an insulating layer having first and second openings; implanting first portions of the active area regions through the first openings with a doping agent of the first conductivity type, thereby forming, in the active area regions, second conduction regions of the first conductivity type; implanting second portions of the active area regions through the second openings with a doping agent of the second conductivity type, thereby forming control contact regions of the second conductivity type and a second doping level, higher than the first doping level; forming, on top of the body, a plurality of storage components, each storage component havin

Abstract: A switching circuit is for switching an output thereof to one of a plurality of N input clock signals which are delayed relative to one another. The switching circuit includes at least one circuit responding to a control signal to enable the transmission, on an output signal, of a new signal of the plurality of input signals. The new signal is advanced or delayed relative to a current signal of the plurality of input signals which is currently transmitted on the output signal. The at least one circuit enables the transmission of the new signal before disabling the transmission of the current signal on the output signal. This substantially prevents the production of false signals during the switching of the output signal from one of the clock signals to another.

Abstract: The memory device of the invention outputs the read data in a time starting from the rising edge of the external clock that is shorter than that of other known devices, because the output buffer has an array of master-slave pairs of flip-flops synchronized by respective timing signals derived from the internal clock signal. The array receives data from the state machine through the second internal bus and provides the data to be output to the output stage of the buffer enabled by the state machine. A logic circuit generates timing signals for the master-slave flip-flops, respectively as logic NAND and logic AND of the internal clock signal and of an enabling signal of the output stage of the buffer generated by the state machine. Moreover, the memory device includes a circuit, synchronized by the internal clock signal, that introduces a delay of the enabling signal of the output stage of the buffer equivalent to a period of the internal clock signal.

Abstract: For each color channel, the process includes gathering Bayer pattern pixel values by pairs, each pair being composed by two successive pixels belonging to the channel along the scanning direction of the pixels of the image, thus each pair of values representing a current input vector, and calculating a predictor vector of the input vector in terms of the differences between the values defining the input vector and a pair of prediction values generated according to a certain criterion, for representing a prediction error. The process further includes quantizing each so calculated predictor vector according to a heavier or lighter degree of quantization depending on whether the predictor vector is representative of an area of relatively uniform color of the image or of an area of relatively abrupt changes of colors of the image, and generating a multibit code representative of the quantized predictor vector of the input vector according to a certain compression ratio.

Abstract: A method realizes a sensor device suitable for detecting the presence of chemical substances and comprises, as detection element, an active film of metallic nanoparticles able to interact with the chemical substances to determine a variation of the global electric conductivity of the film. The method includes preparing an ink comprising a solution of metallic nanoparticles, and depositing the obtained ink on a supporting substrate by ink-jet printing so as to form the active film.

Abstract: A process for converting signals in the form of digital data, such as various types of video/audio/data signals for example, between an original format, in which each data item includes a certain number of digits, and a compressed format, in which each data item includes a smaller number of digits. The process includes the operation of associating the data with a configuration including: a first field identifying the number of sub-blocks into which the said certain number of digits are subdivided, a second field that identifies, within the said sub-blocks, respective sections, each one including a given number of digits, and a third field that identifies, for each these sections, one of a plurality of applicable modes (average, compression, transmission “as is”, etc.) that can be adopted for converting the digits in the section between the original format and the compressed format.

Abstract: A system-on-chip (SOC) includes a power down circuit. Within the SOC are several circuit blocks, each of them operating responsive to a local clock signal. A system clock is coupled to the circuit blocks for providing a system clock signal that functions as the local clock signal for selected circuit blocks. A power control manager provides a signal that at least partially determines whether the system clock will act as the local clock for some of the circuit blocks. Within the circuit blocks is a shutdown circuit that selectively prevents the system clock signal from functioning as the local clock signal in those circuit blocks that receive the shutdown signal, but the shutdown circuit only operates after both the signal to shutdown is received from the power control manager and after the circuit block has, in fact, shutdown.

Abstract: A device is described for the correction of the power factor in power supply units with forced switching operating in transition mode. Said device comprises a converter and a control device coupled with said converter so as to obtain a regulated voltage on the output terminal from an alternating network input voltage. The converter comprises a power transistor whilst the control device comprises a pilot circuit suitable for determining the switch-on time and the switch-off time of the power transistor. The control device furthermore comprises control means coupled with said pilot circuit and with said converter and capable of prolonging the switch-on time of the power transistor at the instants of time wherein the alternating network voltage substantially takes on the value zero.

Abstract: A method and system for correcting errors in multilevel memories is based upon using a combination of a BCH correction code and a Hamming correction code. The BCH correction code is used for correcting multiple errors, and the Hamming correction code is used for correcting single errors. The Hamming correction code reduces the use of the decoding blocks for the BCH correction codes, which are computationally intensive.

Abstract: The invention is directed to a microdevice for containing electrically coupled cells while allowing their growth that allows the addition or removal of cells from their containment by providing an actuatable gate. When the gate is actuated, for example with electric current, the cells may be added or removed from their containment. The invention may be applied to a neurochip or any device for growing cells in a defined spatial arrangement. This Abstract is provided to comply with rules requiring an Abstract that allows a searcher or other reader to quickly ascertain subject matter of the technical disclosure. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims, 37 CFR 1.72(b).

Abstract: A system for decoding digital signals subjected to block coding includes a post-processor that corrects the codewords affected by error, identifying them with the most likely sequence that is a channel sequence and that satisfies a syndrome check. The post-processor is a finite-state machine described by a graph that represents the set of error events. The post-processor evolves in steps through subsequent transition matrices, deleting at each step the paths that accumulate an invalid number of error events or an excessive number of wrong bits, paths that accumulate a total reliability higher than a given threshold, paths with an invalid check on the received sequence, and paths that reveal an invalid syndrome after having reached a maximum number of events.

Abstract: An integrated device in emitter-switching configuration is described. The device is integrated in a chip of semiconductor material of a first conductivity type which has a first surface and a second surface opposite to each other. The device comprises a first transistor having a base region, an emitter region and a collector region, a second transistor having a not drivable terminal for collecting charges which is connected with the emitter terminal of the first transistor, a quenching element of the first transistor which discharges current therefrom when the second transistor is turned off. The quenching element comprises at least one Zener diode made in polysilicon which is coupled with the base terminal of the first transistor and with the other not drivable terminal of the second transistor.

Abstract: A circuit for sensing a ferroelectric non-volatile information storage unit comprises a pre-charge circuit for applying a prescribed pre-charge voltage to a storage capacitor of the information storage unit. The pre-charge voltage causes a variation in a polarization charge of the storage capacitor, depending on an initial polarization state of the storage capacitor. A charge integration circuit integrates an electric charge proportional to the variation in polarization charge experienced by the storage capacitor. The charge integration circuit thus provides an output voltage depending on the polarization state of the storage capacitor.

Abstract: The programming method includes the following steps: sequentially receiving a plurality of data words; temporarily storing each data word after its reception; and simultaneously writing in parallel the plurality of stored data words in a memory array. After reception and temporary storage of each data word, the memory increments an address counter and sends a “ready” signal. Upon reception of each new data word, the memory verifies whether the address associated thereto is in the same sector as the initial data word and whether n data words have already been stored. If the sector is different, blind-programming step is terminated and the verifying is carried out; if the sector is the same but n data words have already been stored temporarily, the memory writes the temporarily stored words in the memory array, updates the address counter, and then sends the “ready” signal.

Abstract: A process for manufacturing a microfluidic device, including the steps of: forming at least one channel in a semiconductor material body; forming a dielectric diaphragm above the channel, for closing the channel; and forming heating elements for providing thermal energy inside the channel. The heating elements are formed directly on said dielectric diaphragm.

Abstract: A color image processing pipeline performs an interpolation on color data to generate triplets located at distinct pixel locations. The pipeline includes defect correction and image enhancement blocks having a first color interpolation block for generating RGB information for each pixel of an input image pixel pattern, and a second color interpolation block for receiving the RGB information to provide enhanced RGB pattern pixels. Dedicated line memories and delay circuits associated with the defect correction and image enhancement blocks permit real-time processing of pixel data. First and second read/write buffers store a subset or pixel block of the image data, and invert a scanning mode of pixel data being fed to the dedicated line memories and delay circuits associated to at least the first color interpolation block, from row-wise to column-wise, for each subset of data to be stored therein.