Abstract: A circuit verifies and substitutes a defective reference cell of a memory device that includes at least one reference current path including the reference cell and a decoding transistor connected in series. The circuit includes at least one redundant reference current path identical to the at least one reference current path and in parallel therewith. A connection circuit connects in a mutually exclusive way control terminals of the decoding transistor and reference cell of the at least one reference current path to a node or control terminals of the decoding transistor and reference cell of the at least one redundant reference current path to the node. The connecting is based upon a logic signal. A window comparator is coupled to the reference current path for comparing a current therein with a pair of upper and lower thresholds, and outputs the logic signal for the connection circuit based upon the comparison.

Abstract: A method for canceling interference at a wireless code division multiple access (CDMA) communication receiver is provided. The wireless CDMA communication system receiver receives a stream of chips generated by spreading data symbols formed by grouping bits of information at a wireless CDMA communication transmitter which are broadcast at a certain chip-rate. The received chips are de-spread and symbols pertaining to respective users are reconstructed. The method includes formatting the stream of chips into blocks of chips, and performing an iterative block decision feedback equalization in a frequency domain at the chip-rate of the broadcast stream of chips to remove inter-symbol interference by defining a transfer function. The transfer function is defined based upon iteration cycles as a function of data detected in a preceding iteration cycle. The chips generated are interleaved by spreading each data symbol being transmitted before broadcasting the stream of interleaved chips in distinct blocks of chips.

Abstract: A sense amplifier for reading a non-volatile memory cell includes a bitline current path connected to a non-volatile memory cell to be read, and a reference current path connected to a reference memory cell. A current mirror includes an input transistor and a corresponding input node, and an output transistor and a corresponding output node. The current mirror converts currents in the reference current path and the bitline current path to respective voltages on the input and output nodes. An equalization circuit equalizes the voltages on the input and output nodes of the current mirror and is activated by a command signal. The equalization circuit includes a switch controlled by the command signal, and a diode-connected load transistor connected in parallel to the output transistor of the current mirror and connected to the output node thereof through the switch.

Abstract: An autotesting method of a cells matrix of a memory device includes the steps of reading the values contained in a plurality of the memory cells, comparing the read values with reference values, signaling mismatch of the read values with the reference values as an error situation, and storing the error situations. In the autotesting method, the reading, comparing, signaling, and storing steps are repeated for all the memory cells in a matrix column. The autotesting method further includes the steps of storing the positions of any columns having at least one error situation, and repeating all of the preceding steps for all the matrix columns.

Abstract: A memory cell comprises a first and a second inverters connected in a latch configuration. The inverters have respective first and second means for receiving a first and a second voltage supplies, respectively. The cell also comprises means, responsive to a memory cell selection signal, for selectively connecting an input of at least one of the first and second inverter to at least one respective input/output data line, carrying an input datum to be written in the memory cell in a memory cell write operation and an output datum read from the memory cell in a memory cell read operation. For flash-clearing the memory cell, means are provided for switching at least one of the first and second voltage supply receiving means of at least one of the first and second inverters between the first voltage supply and the second voltage supply. The memory cell is particularly adapted to implement a flash-clear function in a memory device.

Abstract: A fractional-type phase-locked loop circuit, for synthesizing an output signal multiplying a frequency of a reference signal by a selected fractional conversion factor, includes a frequency divider for generating a feedback signal dividing the frequency of the output signal by a frequency division factor selectable among at least two different integer-value division factors, and frequency divider control means for causing the frequency division factor to vary between the at least two integer-value division factors in a pre-defined number of cycles, thereby an average frequency division factor over said pre-defined number of cycles has a fractional value. Means are provided for compensating a phase error introduced by the frequency divider on the basis of a value indicative of the phase error obtained from said frequency divider control means.

Abstract: A circuit for detecting a logic transition is proposed.

Abstract: A method for defining geometries in a semiconductor wafer supported on a plate electrode in a processing chamber includes forming a reusable refractory coated laminar mask. The reusable refractory coated laminar mask is formed by defining the geometries in a laminar mask substrate, forming apertures through the laminar mask substrate, and forming a layer of refractory material over at least one surface of the laminar mask substrate. The reusable refractory coated laminar mask is positioned over the semiconductor wafer. Treating of the semiconductor wafer is performed through the apertures of the reusable refractory coated laminar mask. The treating may be plasma etching or ion etching.

Abstract: A process for fabricating a dual charge storage location, electrically programmable memory cell, comprising: forming a first dielectric layer over a semiconductor material layer of a first conductivity type; forming a charge trapping material layer over the first dielectric layer; selectively removing the charge trapping material layer from over a central channel region of the semiconductor material layer, thereby leaving two charge trapping material layer portions at sides of the central channel region; masking the central channel region and selectively implanting dopants of a second conductivity type into the semiconductor material layer to form memory cell source/drain regions at sides of the two charge trapping material layer portions; forming a second dielectric layer over the charge trapping material layer; and forming a polysilicon gate over the second dielectric layer, the polysilicon gate being superimposed over the central channel region and the two charge trapping material layer portions.

Abstract: A method for the determination of a bias current of a quartz oscillator that includes the phases of: defining a series of bias currents of prefixed values; supplying to said quartz oscillator a bias current value not yet used; verifying the presence of an oscillation signal at the output of said quartz oscillator; supplying in the negative case to said quartz oscillator a bias current value not yet used and repeating the preceding phase; verifying the presence of the correct oscillation frequency; supplying in the negative case a bias current not yet used to said quartz oscillator and repeating the phase of verifying the presence of an oscillation signal at the output of said quartz oscillator; storing, in the positive case, that the supplied current is valid; repeating the preceding phases up to the exhaustion of said series of values of bias currents; fixing as a bias current of said quartz oscillator the algebraic average of the currents regarded as valid.

Abstract: A decoding structure for a memory device with a control code is used in a memory including a matrix of memory cells grouped into pages to each of which a block of control information is associated, and a plurality of reading elements for reading a plurality of pages in parallel. The decoding structure selectively connects each reading element to a plurality of memory cells, and selectively connects each memory cell to a plurality of reading elements.

Abstract: The circuit comprises a first ring oscillator comprising an odd number of inverting elements, a delay element and an output terminal; the delay element responds to a pulse at its input with a predetermined time delay with respect to a predetermined edge of the input pulse and substantially without time delay with respect to the other edge of the input pulse. With a view to avoiding start-up transients and generating pulses with a duty cycle that can be easily modified, the circuit comprises a second ring oscillator, having an output terminal connected to the output terminal of the first oscillator, and a bistable logic circuit having an output terminal connected to the common output of the first and the second oscillator. At least one of the inverting elements of the first oscillator and at least one of the inverting elements of the second oscillator form part of the bistable logic circuit.

Abstract: An integrated device for nucleic acid analysis having a support and a first tank for introducing a raw biological specimen includes at least one pre-treatment channel, a buried amplification chamber, and a detection chamber carried by the support and in fluid connection with one another and with the tank. The device can be used for all types of biological analyses.

Abstract: A CAM memory cellintegrated on a semiconductor substrateincludes a plurality of floating gate memory cells, matrix-organized in rows, called word lines, and columns, called bit lines. The cells belonging to a same row and have floating gate electrodes are short-circuited with each other in order to form a single floating gate electrodefor the CAM memory cell. Advantageously, the single floating gate electrodeis equipped with at least a cavity manufactured in at least a side wall of the single floating gate electrode. A process for manufacturing CAM memory cellsintegrated on a semiconductor substrateis also described.

Abstract: The described analog-digital converter comprises quantization means having an input for receiving an analog quantity to be converted, a register having an output for providing a digital quantity corresponding to the analog quantity, a timing pulse generator and logic means connected to the quantization means, the register and the timing pulse generator and capable of responding to a conversion request signal by activating the quantization means in such a manner as to make them carry out predetermined operations timed by the timing pulses and load into the register the digital quantity to be provided at the output.

Abstract: A device for timing random reading of a memory device with a data access time, in which reading is performed by a succession of consecutive operations, the timing device being designed to generate, for each operation, a corresponding timing signal such as to cause, whatever the operating condition of the memory device, the corresponding operation to last for a time equal to a respective fixed duration, which is determined so as to guarantee completion of the operation in the worst operating condition of the memory device within the fixed duration; the sum of the fixed durations being equal to the data access time of the memory device.

Abstract: A circuit (115,145,150), for programming a non-volatile memory device (100) having a plurality of memory cells (105), includes a plurality of driving elements (115) each one for applying a program pulse to a selected memory cell to be programmed. The driving elements are suitable to be supplied by a power supply unit (120,125), and a control means (145,150) controls the driving elements (115). The control means (145,150) includes means (150,205) for determining a residual capacity of the power supply unit, and a selecting means (145) selectively enables the driving elements (115) according to the residual capacity. A method of programming, an integrated circuit, and a computer system are also disclosed.

Abstract: The device can be used for generating, in the framework of a CDMA communications terminal, both Walsh-Hadamard channeling codes and OVSF channeling codes. The device comprises a code generator preferably configured for generating Walsh-Hadamard codes. When the device is used for generating Walsh-Hadamard codes, the corresponding index values, applied to an input of the device, are sent to the input of the code generator. Generation of OVSF codes envisages, instead, that the corresponding indices, sent to an input of the device, undergo mapping, which enables generation, starting from the OVSF code, of the corresponding index identifying a string of symbols that is identical within the Walsh-Hadamard code. In this way each string of OVSF code symbols is generated, so producing, by means of the code generator, the generation of the identical string of symbols included in the Walsh-Hadamard code.

Abstract: In order to perform, according to a received signal (r), a channel-estimation procedure and a cell-search procedure in cellular communication systems, there are executed at least one first operation of correlation of said received signal (r) with secondary synchronization codes (SSC) and a second operation of correlation of said received signal (r) with known midamble codes (mid, MPL, MPS), whilst said channel-estimation procedure comprises a third operation of correlation of at least part of said received signal (r) with known midamble codes (mid, MPL, MPS), said first, second, and third correlation operation being executed by sending at least part (emidamble) of said received signal (r) to an input of a correlation bank.

Abstract: A nonvolatile memory with a memory array arranged in rows and columns of memory cells in NOR configuration, the memory cells arranged on a same column being connected to one of a plurality of bit lines and a column decoder. The column decoder comprises a plurality of selection stages, each of which is connected to respective bit lines and receives first bit line addressing signals. The selection stages comprise word programming selectors controlled by the first bit line addressing signals and supplying a programming voltage to only one of the bit lines of each selection stage. Each selection stage moreover comprises a string programming selection circuit controlled by second bit line addressing signals thereby simultaneously supplying the programming voltage to a plurality of the bit lines of each selection stage.