Abstract: A method for driving low consumption LCD modules, the LCD modules having a multiplicity of display elements located at the intersections of a matrix having a plurality of row electrodes and a plurality of column electrodes, the method includes the phases of applying an M bit electrical digital signal to at least one row electrode at a time, subdivided in a plurality of time intervals equal to 2M?1, the electrical digital signal suitable for illuminating each of the display elements with a predefined luminosity level chosen from among 2M luminosity levels, each of the M bits is applied for a preset duration, then reducing the preset duration of each of the M bits in accordance with a predefined scale factor K and subdividing the M bits in (2M?1)/K plurality of time intervals.

Abstract: A method corrects the error in an output digital signal (Out) of an analog/digital converter (ADC) (100), in which the error is introduced by a multibit digital/analog converter (DAC) (125) incorporated in the ADC. The method calculates (905) coefficients (pi,piri) of a linear combination of vectors of a vector space representative of the error introduced by the DAC; calculates (910-1, . . . , 910-7) the correlation of a signal (Res1d) containing the error introduced by the DAC, to extract an estimation of each vector; calculates a linear combination representative of the estimation of the error introduced by the DAC, and uses the estimation of the error introduced by the DAC to correct the ADC output signal.

Abstract: An input stage includes switched capacitors for analog-digital converters. The stage comprises a first switched capacitor circuit structure suitable for sampling an analog signal in input to the converter with a preset sampling period, a buffer having in input the analog signal and that can be connected to the first circuit structure by means of a first and a second sampling switch of the first circuit structure coupled respectively with the output terminal and the input terminal of the buffer. The first and the second switch are controlled respectively by a first and a second signal to close respectively for a first interval of time and for a successive second interval of time of a first semi-sampling period of the analog signal.

Abstract: A method for detecting a null current condition in a PWM driven inductor connected between a voltage source node and a second circuit node of a line for outputting current to a load includes generating a derivative signal by time differentiating a voltage on the second node. The method further includes monitoring an instant when the derivative signal becomes negative, and signaling verification of the null current condition each time the derivative signal becomes negative.

Abstract: An in-situ deposition and doping method for polycrystalline silicon layers of semiconductor devices. A first intermediate layer of in-situ doped polycrystalline silicon is grown, and a second additional layer of polycrystalline silicon is grown with a lower doping level than that of the first intermediate layer of polycrystalline silicon. In one preferred method, the second doping level is substantially lower than the first doping level. Additionally, a semiconductor memory device of the type having a gate stack is provided. The memory device includes at least one gate layer of polycrystalline silicon, and the gate layer of polycrystalline silicon is formed from a first intermediate layer of polycrystalline silicon with a first doping level, and an overlaying second additional layer of polycrystalline silicon with a second doping level that is lower than the first doping level. In a preferred embodiment, the second doping level is substantially lower than the first doping level.

Abstract: A device integrated in a semiconductor substrate of a first type of conductivity being crowned by a semiconductor layer of a second type of conductivity comprising a voltage controlled resistive structure and an IGBT device, wherein the resistive structure comprises at least one substantially annular region of the first type of conductivity which surrounds a portion of the semiconductor layer.

Abstract: A logarithmic linear variable gain CMOS amplifier includes first and second differential pairs of transistors forming a differential input, with each differential pair of transistors including a common source node. A pair of diode-connected load transistors is connected to the first and second differential pairs of transistors, and a third differential pair of transistors is connected to the pair of diode-connected load transistors. The third differential pair of transistors include respective gates connected together and in parallel to gates of the first and second differential pairs of transistors. First and second current mirrors are respectively connected to the common source nodes of the first and second differential pairs of transistors for programmably injecting respective bias currents thereto, with a sum of the respective bias currents remaining constant.

Abstract: The method detects variations of the torque of a DC motor and is particularly suited for detecting an accidental block of the motor operation. The method includes generating a first signal representing the current flowing in the motor, multiplying the first signal with a pre-established function producing a product signal, generating a comparison signal to correspond to the slope of the product signal and signaling a torque variation if the comparison signal surpasses a certain threshold.

Abstract: A word line selector for selecting word lines of an array of semiconductor memory cells formed in a doped semiconductor region of a semiconductor substrate comprises a plurality of word line drivers responsive to word line selection signals. Each word line driver is associated with a respective word line for driving the word line to prescribed word line electric potentials, depending on an operation to be conducted on the array of memory cells, in accordance with the word line selection signal.

Abstract: A redundancy scheme for a memory integrated circuit having at least two memory sectors and, associated with each memory sector, a respective memory location selector for selecting memory locations within the memory sector according to an address. The redundancy scheme comprises at least one redundant memory sector adapted to functionally replace one of the at least two memory sectors, and a redundancy control circuitry for causing the functional replacement of a memory sector declared to be unusable by one of the at least one redundant memory sector; the redundancy control circuitry detects an access request to a memory location within the unusable memory sector and diverts the access request to a corresponding redundant memory location in the redundant memory sector. Associated with each memory location selector, respective power supply control means are provided adapted to selectively connect/disconnect the associated memory location selector to/from a power supply distribution line.

Abstract: The calculation circuit comprises a subtracter having a first and a second input receiving a first and, respectively, a second input datum; a first output supplying a first output datum equal to the difference between the first and the second input datum; and a second output supplying a sign flag indicating the sign of the first output datum; an XOR logic gate having a first input receiving the sign flag, a second input receiving a first logic selection signal assuming a first level for the selection of the logical fuzzy union operation and a second level for the selection of the logical fuzzy intersection operation, and an output supplying a second logic selection signal; and a multiplexer having a first and a second datum input receiving the first and, respectively, the second input datum; a selection input receiving the second selection signal; and an output supplying a second output datum constituted by the first or the second input datum (A, B) as a function of the level assumed by the second selection s

Abstract: A circuit architecture and a method perform a page programming in non-volatile memory electronic devices equipped with a memory cell matrix and an SPI serial communication interface, as well as circuit portions associated to the cell matrix and responsible for the addressing, decoding, reading, writing and erasing of the memory cell content. Advantageously, a buffer memory bank is provided to store and output data during the page programming in the pseudo-serial mode through the interface. Data latching is performed one bit at a time and the following outputting occurs instead with at least two bytes at a time.

Abstract: An inertial sensor with failure threshold includes a first body and a second body, which can move relative to one another and are constrained by a plurality of elastic elements, and a sample element connected between the first body and the second body and shaped so as to be subjected to a stress when the second body is outside of a relative resting position with respect to the first body. The sample element has at least one weakened region. The sensor may also include additional sample elements connected between the first and second bodies.

Abstract: A device for generating synchronous numeric signals, including a first signal generator which supplies a numeric reference signal having a first frequency and a first period; and a second signal generator which generates an internal numeric signal having a second frequency and a second period, and a synchronized numeric signal. In addition, the second signal generator includes a predictor which generates, with a third period and a third frequency higher than the first frequency and the second frequency, estimated samples correlated to a current sample and to a predetermined number of former samples of the internal numeric signal. The predictor, in turn, includes a selection circuit controlled by the first signal generator for selecting one among the estimated samples in each reference period, the synchronized numeric signal being formed by the selected estimated samples.

Abstract: Method for detecting movements through a micro-electric-mechanical sensor, having a fixed body and a moving mass, forming at least one first and one second detection capacitor, connected to a common node and to a first, respectively a second detection node and having a common detection capacitance at rest and a capacitive unbalance in case of a movement. The method includes the steps of: feeding the common node with a constant detection voltage of predetermined duration; generating a feedback voltage to maintain the first and the second detection node at a constant common mode voltage; generating a compensation electric quantity, inversely proportional to the common detection capacitance at least in one predetermined range; supplying the compensating electric quantity to the common node; and detecting an output quantity related to the capacitive unbalance.

Abstract: A circuit for biasing an input node of a sense amplifier is proposed. The circuit includes a voltage regulator for keeping the input node at a pre-set operative voltage during a sensing operation. The circuit further includes a pulling device for pulling the input node from a starting voltage towards a power supply voltage, the operative voltage being comprised between the starting voltage and the power supply voltage. The circuit also includes a control device for disabling the pulling device before the input node reaches the operative voltage.

Abstract: A memory device is configured for communicating with one of two different serial protocols, respectively an LPC or an SPI protocol, as well as with a parallel communication protocol through a multi-protocol interface while requiring only a single additional pin as compared to a standard memory device accessible with a parallel communication protocol. This result is achieved by exploiting the same pin for providing a timing signal for serial mode communications or an address multiplexing signal for parallel mode communications. The additional pin is used for conveying a start signal of an A/AMUX parallel communication protocol. The interface includes logic circuits that generate an enable signal for the standard memory core of the memory device.

Abstract: A process for defining a chalcogenide material layer using a chlorine based plasma and a mask, wherein the portions of the chalcogenide material layer that are not covered by the mask are etched away. In a phase change memory cell having a stack of a chalcogenide material layer and an AlCu layer, the AlCu layer is etched first using a chlorine based plasma at a higher temperature; then the lateral walls of the AlCu layer are passivated; and then the chalcogenide material layer is etched at a lower temperature.

Abstract: A controlled switch of the switched capacitance type is disclosed. In one embodiment the controlled switch comprises a control circuit for the switch, in a first phase the controlled circuit closes the controlled switch, in a second phase the control circuit opens the controlled switch, the controlled switch comprises a MOS transistor having a source and a substrate, characterized in that in the first phase the substrate is coupled to ground and in the second phase the substrate is coupled to the source.

Abstract: A method for manufacturing electrically non-active structures for an electronic circuit integrated on a semiconductor substrate is provided, with the electronic circuit including first and second electrically active structures. The method includes inserting the electrically non-active structures in the electronic circuit to make uniform a surface above the semiconductor substrate. The inserting includes identifying, among the electrically non-active structures, a first group of electrically non-active structures to be adjacent the first and second electrically active structures, and identifying, among the electrically non-active structures, a second group of electrically non-active structures not adjacent to the first and second electrically active structures. The method further includes defining, on the semiconductor substrate, the first and second groups of electrically non-active structures through different photolithographic steps.