Abstract: A sense amplifier structure for multi-level non-volatile memories reads the contents of the memory cells. In particular, a current drawn by a memory cell to be read is compared to a current drawn by a reference cell through a sense amplifier that has one input terminal connected to a circuit node to which said currents are led. Advantageously, the currents are compared at both inputs of the sense amplifier by connecting a second input of said amplifier to a circuit node to which said currents are led, with opposite signs. The method enhances the read precision of the sense amplifier for a given data acquisition time by doubling the differential input voltage.

Abstract: A method manages lamp fault conditions in electronic ballasts for one or more gas discharge lamps. The method for fault management of electronic ballast for at least one gas discharge lamp includes the steps of: preheating the lamp filaments applying a low current for a predetermined time; igniting the lamp by increasing at a predetermined rate the voltage applied up to a predetermined strike value; monitoring the lamp current; repeating the steps of igniting the lamp and monitoring the lamp current for a predetermined numbers of times if the lamp current is over a predetermined threshold; and powering the lamp at normal operating conditions.

Abstract: A method and a circuit are for regulating the source terminal voltage of a non-volatile memory cell during the cell programming and/or reading phases. The method includes a phase of locally regulating the voltage value and includes comparing the source current of the cell array with a reference current. A fraction of the source current is converted to a voltage and compared with a voltage generated from a memory cell acting as a reference and being programmed to the distribution with the highest current levels. The comparison may be used for controlling a current generator to inject, into the source terminal, the current necessary to keep the predetermined voltage thereof at a constant value.

Abstract: A method for calibrating a frequency of a sigma—delta modulator having a go path that includes, in series, a resonator circuit and of an analog to digital conversion block, and a feedback path including a digital to analog conversion block, including the steps: a) applying an input pulse to the resonator circuit; b) measuring the oscillating frequency of the output signal from the resonator circuit in response to the pulse, while the feedback path of the sigma—delta modulator is opened; c) comparing the oscillating frequency of the resonator circuit with a selected frequency; d) modifying the oscillating frequency proportionately as a function of the comparison step. The resonator circuit includes an integrator filter with a variable gain amplifier in its feedback path, the variable gain configured to be modified as a function of the comparison, performed while the modulator feedback path is opened.

Abstract: A process is disclosed for forming, on a common semiconductor substrate, CMOS transistors and vertical or lateral MOS transistors on at least first and second portions, respectively, of the substrate. A first dielectric layer is formed on the substrate. A first semiconductor material layer is then formed on the first dielectric layer, in the first portion. A stack structure comprising a second dielectric layer, second semiconductor layer, and low-resistance layer is then formed over the substrate. First ports are defined in the second semiconductor layer and the low-resistance layer to provide gate regions of the vertical or lateral MOS transistors. The second semiconductor layer and the low-resistance layer are then removed from the first portion of the substrate by using the second dielectric layer as a screen. Second ports in the second dielectric layer and the second semiconductor layer are then defined to provide gate regions for the CMOS transistors.

Abstract: A phase change memory has an array formed by a plurality of cells, each including a memory element of calcogenic material and a selection element connected in series to the memory element; a plurality of address lines connected to the cells; a write stage and a reading stage connected to the array. The write stage is formed by current generators, which supply preset currents to the selected cells so as to modify the resistance of the memory element. Reading takes place in voltage, by appropriately biasing the selected cell and comparing the current flowing therein with a reference value.

Abstract: A microcontroller device in which complex processing procedures to be executed iteratively are implemented in a hardware manner by finite state machines, the deice including a module for managing the processing procedures and an interrupt managing module, and a set of registers for enabling interruption of execution in the module, for managing the processing procedures and transfer of control to the interrupt manager, as well as for enabling restoration of the control to the manager of the processing procedures. The registers store information regarding the type of interrupt and the state on which it intervenes. Selection information is derived from the contents of the registers to establish whether the interrupt operates on a standard instruction or else on an iterative procedure, and in order to command operation of the control unit accordingly.

Abstract: A dynamically reconfigurable processing unit includes a microprocessor, and an embedded Flash memory for non-volatile storage of code, data and bit-streams. The embedded Flash includes a field programmable gate array (FPGA) port. The reconfigurable processing unit further includes a direct memory access (DMA) channel, and an S-RAM embedded FPGA for FPGA reconfigurations. The S-RAM embedded FPGA has an FPGA programming interface connected to the FPGA port of the Flash memory through the DMA channel. The microprocessor, the embedded Flash memory, the DMA channel and the S-RAM embedded FPGA are integrated as a single chip.

Abstract: A method of forming buried cavities in a wafer of monocrystalline semiconductor material with at least one cavity formed in a substrate of monocrystalline semiconductor material by timed TMAH etching silicon; covering the cavity with a material inhibiting epitaxial growth; and growing a monocrystalline epitaxial layer above the substrate and the cavities. Thereby, the cavity is completely surrounded by monocrystalline material. Starting from this wafer, it is possible to form a thin membrane. The original wafer must have a plurality of elongate cavities or channels, parallel and adjacent to one another. Trenches are then excavated in the epitaxial layer as far as the channels, and the dividers between the channels are removed by timed TMAH etching.

Abstract: A user controlled device, movable into a plurality of positions of a three-dimensional space, includes a MEMS acceleration sensor to detect 3D movements of the user controlled device. The device, such as a mouse, sends control signals correlated to the detected positions to an electrical appliance, such as a computer system. A microcontroller processes the output signals of the MEMS acceleration sensor to generate the control signals, such as screen pointer position signals and “clicking” functions.

Abstract: A method for implementing one-to-one binary functions defined on the Galois field GF(28) is very useful for forming fast and low power hardware devices regardless of the binary function. The method includes decoding an input byte for generating at least one bit string that contains only one active bit, and logically combining the bits of the bit string according to the binary function for generating a 256-bit string representing a corresponding output byte. The 256-bit string is then encoded in a byte for obtaining the output byte.

Abstract: An analog multiplier for multiplying a first analog voltage signal at a first frequency by a second analog voltage signal at a second frequency, comprising a first stage for converting the first analog voltage signal into a first and a second current signals, and a second stage comprising a first and a second cross-coupled current-switching pairs, driven by the second voltage signal, the first and second current-switching pairs having respective current inputs for receiving the first and the second current signals, respectively. Parasitic capacitances are inherently associated with each current input of the current-switching pairs. A compensation circuit is coupled to the current inputs of the current-switching pairs for compensating the parasitic capacitances.

Abstract: Integrated microreactor, formed in a monolithic body and including a semiconductor material region and an insulating layer; a buried channel extending in the semiconductor material region; a first and a second access trench extending in the semiconductor material region and in the insulating layer, and in communication with the buried channel; a first and a second reservoir formed on top of the insulating layer and in communication with the first and the second access trench; a suspended diaphragm formed by the insulating layer, laterally to the buried channel; and a detection electrode, supported by the suspended diaphragm, above the insulating layer, and inside the second reservoir.

Abstract: A parallel sense amplifier includes a measuring branch for receiving an input current to be measured, a plurality of reference branches each one for receiving a reference current, and a plurality of comparators each one for comparing a voltage at a measuring node along the measuring branch with a voltage at a reference node along a corresponding reference branch; the amplifier further includes a multiple current mirror for mirroring the input current into each reference branch.

Abstract: A method and a relative test structure for measuring the coupling capacitance between two interconnect lines exploits the so-called cross-talk effect and keeps an interconnect line at a constant reference voltage. This approach addresses the problem of short-circuit currents that affect known test structures, and allows a direct measurement of the coupling capacitance between the two interconnect lines. Capacitance measurements may also be used for determining points of interruption of interconnect lines. When a line is interrupted, the measured coupling capacitance is the capacitance of a single conducting branch. The position of points of interruption of an interconnect line is determined by measuring the coupling capacitance of all segments of the line with a second conducting line.

Abstract: A charge pump for negative voltages, having at least one stage including a high-voltage terminal and a low-voltage terminal; a first branch and a second branch, which are symmetrical and are connected between the high-voltage terminal and the low-voltage terminal and each of which comprises a respective first transistor and a respective second transistor. The first and the second transistors are all triple-well MOS transistors of one and the same polarity type.

Abstract: A driving circuit is provided for a control terminal of a bipolar transistor in an emitter-switching configuration. The emitter-switching configuration is between a resonant load and a voltage reference. The driving circuit includes at least one capacitor between the control terminal of the bipolar transistor and the voltage reference. The driving circuit further includes an additional resonance capacitor between a collector terminal of the bipolar transistor and a circuit node, a first diode between the circuit node and the control terminal, and a second diode between the circuit node and the voltage reference.

Abstract: A method for generating sequences of memory addresses for a memory buffer having N*M locations includes making a first address and a last address of every sequence respectively equal to 0 and to N*M−1, assigning a first sequence of addresses, and each address but a last address of another sequence of addresses is generated by multiplying a corresponding address of a previous sequence by N, and performing a modular reduction of this product with respect to N*M−1. The method further includes calculating a greatest bit length of every address, and calculating an auxiliary constant as the modular reduction with respect to N*M−1 of the power of two raised to twice the greatest bit length.

Abstract: The invention relates to a method for pinpointing erase-failed memory cells and to a relevant integrated non-volatile memory device, of the programmable and electrically erasable type comprising a sectored array of memory cells arranged in rows and columns, with at least one row-decoding circuit portion per sector being supplied positive and negative voltages. This method becomes operative upon a negative erase algorithm issue, and comprises the following steps: forcing the read condition of a sector that has not been completely erased; scanning the rows of said sector to check for the presence of a spurious current indicating a failed state; finding the failed row and electrically isolating it for re-addressing the same to a redundant row provided in the same sector.

Abstract: In a first step, slot synchronization may be obtained by setting in correlation the received signal with a primary sequence, which represents the primary channel, and storing the received signal. During a second step, the correlator may be re-used for correlating the received signal with a secondary sequence corresponding to the secondary synchronization codes. The correlator may include a first filter and a second filter connected in series, which receive a first secondary sequence and a second secondary sequence, which may include Golay sequences. Architectures of parallel and serial types, as well as architectures designed for re-using further circuit parts are also disclosed. The invention is particularly application in mobile communication systems based upon standards such as UMTS, CDMA2000, IS95, and WBCDMA.