Abstract: A method for manufacturing electrically non-active structures for an electronic circuit integrated on a semiconductor substrate is provided, with the electronic circuit including first and second electrically active structures. The method includes inserting the electrically non-active structures in the electronic circuit to make uniform a surface above the semiconductor substrate. The inserting includes identifying, among the electrically non-active structures, a first group of electrically non-active structures to be adjacent the first and second electrically active structures, and identifying, among the electrically non-active structures, a second group of electrically non-active structures not adjacent to the first and second electrically active structures. The method further includes defining, on the semiconductor substrate, the first and second groups of electrically non-active structures through different photolithographic steps.

Abstract: An electronic torque control and distribution system is provided for a hybrid propulsion vehicle. The drive thrust of the hybrid propulsion vehicle is distributed between an electric engine and an internal combustion engine through a transmission system. The transmission system delivers the torque of both engines to the vehicle wheels. The electronic torque control and distribution system is slaved to a control unit, and includes a controller for incorporating a fuzzy logic processor to predict through soft computing techniques the torque contributions of the electric engine and of the internal combustion engine. A sensor estimates the vehicle polluting emissions. The controller and the sensor are both connected to the control unit.

Abstract: A read control circuit and a reading method for an electronic memory device integrated on a semiconductor includes a non-volatile memory matrix with associated row and column decoders connected to respective outputs of an address counter. An address transition detect (ATD) circuit detects an input transition as the memory device is being accessed, and read amplifiers and attendant registers transfer the data read from the memory matrix to the output. The read control circuit includes a detection circuit to which is input a clock signal and a logic signal to enable reading in the burst mode. A burst read mode control logic circuit is connected downstream of the detection circuit. The method includes accessing the memory matrix in a random read mode, detecting a request for access in the burst read mode, and executing the parallel reading of a plurality of memory words during a single period of time clocked by the clock signal.

Abstract: An electronic memory circuit comprises a matrix of EEPROM memory cells. Each memory cell includes a MOS floating gate transistor and a selection transistor. The matrix includes a plurality of rows and columns, with each row being provided with a word line and each column comprising a bit line organized in line groups so as to group the matrix cells in bytes, each of which has an associated control gate line. A pair of cells have a common source region, and each cell symmetrically provided with respect to this common source region has a common control gate region.

Abstract: A method for amplifying a digital signal representative of data to be transmitted by a line driver with pre-emphasis over an output line is provided. The gain of the line driver is varied between an upper value to coincide with switching of the digital signal and a lower value in absence of the digital signal switching. In particular, the varying includes amplifying the digital signal with a first gain for generating an amplified digital signal, delaying the digital signal with a predetermined delay for generating a delayed digital signal, and amplifying the delayed digital signal with a second gain for generating a delayed and amplified digital signal. An ouput signal corresponding to a difference between the amplified digital signal and the delayed and amplified digital signal is output over the output line.

Abstract: A method is described for controlling fuel injection in an spontaneous ignition engine equipped with an electronically controlled fuel injection system and with an electronic control unit receiving engine quantities comprising the pressure in the combustion changer of the engine and closed-loop controlling the fuel injection system on the basis of the pressure in the combustion chamber, in which the pressure in the combustion chamber is determined as a function of engine kinematic quantities such as the engine speed and the crank angle and of the fuel injection law, which is defined by the quantity of fuel injected and by the crank angle at the start of injection.

Abstract: A process for manufacturing a memory device having selector bipolar transistors for storage elements, includes the steps of: in a semiconductor body, forming at least a selector transistor, having at least an embedded conductive region, and forming at least a storage element, stacked on and electrically connected to the selector transistor; moreover, the step of forming at least a selector transistor includes forming at least a raised conductive region located on and electrically connected to the embedded conductive region.

Abstract: A stop and release circuit of a sync signal, to temporarily suspend or interrupt the sync signal, the input sync signal having a plurality of leading edges and a plurality of trailing edges, the circuit including a first divider that receives the input sync signal and supplies a first signal made up of the sync signal divided by two starting from a leading edge, a second divider that receives the inverse input sync signal and supplies a second signal made up of the sync signal divided by two starting from a trailing edge, an exclusive OR circuit that receives the first signal and the second signal and that supplies an output sync signal, a stop circuit for the first divider and the second divider, and an asynchronous command signal generated by the stop circuit for the temporary interruption of the output sync signal.

Abstract: The present invention relates to a new light emitters that exploit the use of semiconducting single walled carbon nanotubes (SWNTs). Experimental evidences are given on how it is possible, within the standard silicon technology, to devise light emitting diodes (LEDs) emitting in the infrared IR where light emission results from a radiative recombination of electron and holes on semiconducting single walled carbon nanotubes (SWNTs-LED). We will also show how it is possible to implement these SWNTs-LED in order to build up a laser source based on the emission properties of SWNTs. A description of the manufacturing process of such devices is also given.

Abstract: A boosted sampling circuit that is relatively straightforward to form is provided, as well as a corresponding method for driving the same. The input voltage applied to the boosted sampling circuit may be equal to a supply voltage or may be greater than a maximum voltage level allowed by the prior art circuits. This result is attained by connecting the control nodes of a plurality of switches to the input node while a first control phase is active, and by connecting a current terminal of another switch to a biasing voltage for protecting it from breakdowns.

Abstract: A device for driving electric motors includes a power stage with a variable duty-cycle coupled to a supply voltage. The power stage is suitable for driving an electric motor. The driving device includes a circuit that is capable of raising the value of the input voltage of the power stage above the induced counter electromotive voltage of the motor in certain periods of time and a control device capable of activating the circuit in reply to values of the induced counter electromotive voltage being greater than or comparable with the supply voltage.

Abstract: A method for providing apertures having sublithographic dimensions in substrates, its particularity consisting in that it comprises the steps of: arranging a layer of resist on a wafer; by using a mask provided with an aperture, exposing the resist layer to a light source for a first time, which is shorter than a time after which the resist undergoes a modification of its characteristics; shifting the mask laterally by a chosen length; reexposing the wafer to the light source for a second time, such that the sum of the first and second exposure times is greater than the exposure time after which the layer of resist undergoes a modification of its characteristics, so as to form a region having sublithographic dimensions in which the resulting exposure time is equal to the sum of the first and second exposure times.

Abstract: A circuit is proposed for driving a memory line controlling at least one memory cell of a non-volatile memory device, the circuit being responsive to a first and a second selection signals, each one suitable to assume a first logic value or a second logic value, wherein the circuit includes a first level shifter for converting the first selection signal into a first operative signal and a second level shifter for converting the second selection signal into a second operative signal, each level shifter including first shifting means for shifting one of the logic values of the corresponding selection signal to a first bias voltage, and a selector for applying the first operative signal or a second bias voltage to the memory line according to the second operative signal; in the circuit of the invention each level shifter further includes second shifting means for shifting another of the logic values of the corresponding selection signal to the second bias voltage.

Abstract: A semiconductor integrated circuit for processing a plurality of received broadcast signals, such as GPS signals, is operable in two modes: acquisition and tracking. In an acquisition mode, a separate acquisition engine is used which includes a sample reducer for combining samples of a received signal for correlation with a locally generated version of a GPS code. A serial to parallel converter converts the reduced samples to parallel words which are correlated in parallel with locally generated words of the GPS code.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: A process for selectively sealing a capacitive element incorporated in a non-volatile memory cell integrated in a semiconductor substrate, the cell including a MOS transistor. The process includes: forming the MOS transistor on the semiconductor substrate; depositing an insulating layer over the substrate and MOS transistor; depositing a first metal layer to form, using a photolithographic technique, a lower electrode of the capacitive element; depositing a dielectric layer onto the first metal layer; depositing a second metal layer onto the dielectric layer; depositing a layer of a sealing material onto the second metal layer, the sealing material being impermeable to hydrogen; and defining the dielectric layer, second metal layer, and sealing layer by a single photolithographic defining step, so to form an upper electrode in the second metal layer and concurrently pattern the dielectric layer and seal the capacitive element.

Abstract: An image-detecting device including: a body housing a sensor; a first supporting element, rigidly coupled with the body and defining a seat; and an objective including at least one optical unit having an optical axis. The seat forms a guide portion engaging directly and slidably an alignment portion formed by said optical unit to keep the optical axis orthogonal to the sensor.

Abstract: A telephone comprises an acoustic alarm, conversation members, first control means for the acoustic alarm, second control means for the conversation members, first supply means and second supply means for absorbing energy from a telephone line, the first supply means and the second supply means supplying the first control means in a call condition and the second control means in a conversation condition, respectively, wherein the first supply means further supplying the second control means in the call condition.

Abstract: A codifying and storing method for membership functions representing a membership degree of fuzzy variables defined within a universe of discourse which is discretized into a finite number of points is provided. The membership functions are quantized into a finite number of levels corresponding to a finite number of membership degrees and are stored by means of a characteristic value of each sub-set of values of fuzzy variables having for their image the same value of the membership degree corresponding to one of said levels. Also provided is a method for calculating the value of the membership degree of a fuzzy variable defined within a universe of discourse discretized into a finite number of points with reference to a membership function thereof, as well as to a circuit for calculating the membership degree of a fuzzy variable with reference to a membership function thereof.

Abstract: A new memory controller for use in a display, such as a liquid crystal display of the type comprising a set of first drivers, a set of second drivers, a portion of which can be converted to the first drivers, and a RAM memory structured to accept data at an input and output the data to the sets of first and second drivers when a master clock signal is received at the RAM memory. The memory controller includes a clock signal generator structured to generate the master clock signal; and a control signal generator circuit structured to generate control signals for the RAM memory and the sets of first and second drivers.