Abstract: The invention relates to a process for manufacturing a light sensor device in a standard CMOS process, including at least the following phases: implanting active areas on a semiconductor substrate to obtain at least a first, a second and a third integrated region of corresponding photosensors; forming a stack of layers of different thickness and refractive index layers over the photosensors to provide an interferential filter for said photosensors. The stack is obtained by a deposition of a first oxide stack including a first, a second and a third oxide layer over at least one photosensor; moreover, this third oxide layer is obtained by a deposition step of an protecting undoped premetal dielectric layer.

Abstract: Method for manufacturing an SOI wafer. On a monocrystalline silicon wafer, forming protective regions having the shape of an overturned U, made of an oxidation resistant material, the protective regions covering first wafer portions. Forming deep trenches in the wafer which extend between, and laterally delimit the first wafer portions, completely oxidizing the first wafer portions except their upper areas which are covered by the protective regions, to form at least one continuous region of covered oxide overlaid by the non-oxidized upper portions. Removing the protective regions, and epitaxially growing a crystalline semiconductor material layer from the non-oxidized upper portions.

Abstract: Integrated circuit including a power component with vertical current flow and at least one low or medium voltage component, the at least one low or medium voltage component formed in a first semiconductor layer separated from a second semiconductor layer by an insulating material layer. The power component with vertical current flow is formed in the second semiconductor layer, and excavations are formed in the insulating material layer which extend from a free surface of the first semiconductor layer to the second semiconductor layer, said excavations having lateral walls of insulating material and being filled up with a conductor material in order to electrically contact active regions of the power component in the second semiconductor layer by electrodes placed on the free surface of the first semiconductor layer.

Abstract: The invention relates to a MOS transistors substitutive circuit having a transformer/data interface function, in particular for ISDN networks, comprising first (11a) and second (11b) power supply/transmitter blocks, the first power supply/transmitter block (11a) being connected between a voltage reference (V) and a first data interface (RX), and the second power supply/transmitter block (11b) being connected between a ground potential reference (GND) and a second data interface (TX), both power supply/transmitter blocks being connected to a supply voltage reference (VDD). The MOS transistors substitutive circuit according to the invention comprises first (12) and second (12′) MOS transistor pairs connected to the voltage reference (V), the MOS transistors being diode configured and held in their saturation range, so as to have a high A.C. impedance and virtually zero D.C. impedance, thereby minimizing power dissipation through the substitutive circuit.

Abstract: A voltage regulator having a comparator with an output terminal that is the output of the regulator, terminals for connection to a voltage supply, a source of a reference voltage connected to an input terminal of the comparator, and a feedback circuit connected between the output terminal and the other input terminal of the comparator. To prevent transients upon the transition from the standby state to the active state, there is provided a second reference-voltage source that provides a reference voltage substantially equal to that of the first source, a switch for connecting the second source to the other input terminal of the comparator, and a control circuit that can activate the supply of the regulator and can close the switch for a predetermined period of time when the supply of the regulator is activated.

Abstract: A charge pump having a phase-generator circuit generating phase signals and an oscillator circuit supplying a clock signal, a current-limitation circuit to limit the current flowing in the oscillator circuit, and a control circuit supplying on an output a control signal supplied to the current-limitation circuit. The control circuit has a first current mirror connected to a ground line, a second current mirror connected to a supply line, a cascode structure arranged between the first and the second current mirrors and connected to the output of the control circuit to compensate the effects on the control signal caused by sharp relative variations between the potential of the supply line and the potential of the ground line, and a compensation circuit to compensate the effects on the control signal caused by sharp relative variations between the potential of the supply line and the potential of the ground line and by slow variations in temperature.

Abstract: A pull-up circuit for input/output terminals of electronic appliances is disclosed. The circuit is arranged between an input/output terminal and a supply voltage terminal and includes a first transistor and a resistance serially connected and coupled between the input/output terminal and the supply-voltage terminal and circuitry suitable for driving the transistor so as to switch it on or off depending on whether the values achieved by the voltage of the input/output terminal belong or do not belong to a set range of voltage values within the supply-voltage value.

Abstract: A switched capacitor circuit comprising an operational amplifier, having first and second input terminals and an output terminal, the first input terminal being connected to a first reference potential. The operational amplifier is provided with a negative feedback network including a first capacitive element which is connected between the second input terminal and the output terminal of the operational amplifier, a second capacitive element which has a first terminal alternately connected to the second input terminal of the operational amplifier and to a reference potential, and a second terminal connected to a first circuit node which is alternately connected to a signal input terminal and said first output terminal of the operational amplifier. The circuit further includes a third capacitive element connected between the circuit node and a reference potential.

Abstract: Presented is an EEPROM circuit comprising: a program array of a matrix of EEPROM cells arranged in columns and rows, a data array of a matrix of EEPROM cells arranged in columns and rows, the cells of the program and data array capable of being written, read, and erased; a reference voltage circuit coupled to the program array capable of producing voltages used to write to and erase data from the program array; a current generation circuit coupled to the program array for supplying current to the program array in operation. Advantageously according to the invention, the reference voltage circuit and the current generation circuit are additionally coupled to the data array. Moreover, the EEPROM circuit further comprises means for selectively connecting at least one of the rows of the program array to one of the rows of the data array, and for selectively connecting at least one of the columns of the program array to one of the columns of the data array.

Abstract: A drive circuit for controlled edge power elements is described. In one embodiment the drive circuit for controlled edge power elements comprises: a first integrating circuit having a first input suitable for receiving in input a first drive signal; an integrating capacitor coupled to said integrating circuit; a first power element driven by said first integrating circuit and suitable for driving a load, said load having a first terminal. The said first integrating circuit includes a first current amplifier and said integrating capacitor is coupled between said first input and a predetermined reference voltage.

Abstract: A method for correction of errors in a word stored in multi-bit memory cells includes associating a full error code, which includes bit error codes and a set error code, for each set of bits of the word stored in a single memory cell. The method includes associating, with each single error, a bit error code which is not associated with other errors and which is indicative of a position of the bit in the word. The set error code is computed based on the bit error codes associated with the bits in the set. The method also checks to make sure that the full error code for the set has not already been associated with other errors. If the error code has already been used for another error, then the method changes both the set error code and at least one of the bit error codes.

Abstract: A frequency multiplier circuit and a controlling method thereof, which measures a period of a waveform by counting cycles of a fixed frequency timing signal, and reproduces the period by adding a number of prefixed length subperiods of the fixed frequency to the cycle count, making it as equal as possible to the period, so to minimize the reproduction error.

Abstract: A method for coding video data according to the MPEG-2 standard is provided. Non-Intra fields are identified among Intra fields and various coding options exist for the non-Intra fields, including removal of temporal redundancy using a motion estimation algorithm and identification of predictor macroblocks for providing approximation according to a prediction mode selectable among respective predicting modes of the different types of non-Intra fields. The method includes calculating a discrete cosine transform (DCT) for blocks of data of the predictor macroblocks according to a frame mode of decomposition with the blocks being composed of lines of data belonging to even lines semifield and to odd lines semifield, or in a field mode of decomposition with the blocks being composed of lines of data belonging to the same semifield. The data resulting from the DCT carried out by blocks of data to be stored is quantized and coded.

Abstract: A method for manipulating MEMS devices integrated on a semiconductor wafer and intended to be diced one from the other includes bonding of the semiconductor wafer including the MEMS devices on a support with interposition of a bonding sheet. The method may also include completely cutting or dicing of the semiconductor wafer into a plurality of independent MEMS devices, and processing the MEMS devices diced and bonded on the support in a treatment environment for semiconductor wafers. A support for manipulating MEMS devices is also included.

Abstract: A method is for low-dielectric-constant film deposition on a surface of a semiconductor substrate. The deposition may be by chemical vapor deposition (CVD) techniques and may include a wide class of precursor monomeric compounds, namely organosilanes.

Abstract: A final stage for a high-speed comparator, and a method of driving an electric load having a capacitive component are disclosed. The final stage comprises a first or pull-up component and a second or pull-down component which are connected in series with each other between a first or supply voltage reference and a second voltage reference. A dynamic drive device and a separate static drive device are coupled to each component of the output stage. Each component of the final stage is driven separately according to whether it is in a static or a dynamic load condition.

Abstract: A manufacturing process providing a zener diode formed in an N-type well housing a first N-type conductive region and having a doping level higher than the well, and a second P-type conductive region arranged contiguous to the first conductive region. The first conductive region is connected, through a third N-type conductive region having the same doping level as the first conductive region, to a conductive material layer overlying the gate oxide layer to be protected. The third conductive region, the well, and the substrate form an N+/N/P diode that protects the gate oxide layer during manufacture of the integrated device from the deposition of the polycrystalline silicon layer that forms the gate regions of the MOS elements.

Abstract: It is described a circuit generating a stable reference voltage with respect to temperature, which circuit is connected between first and second voltage references and comprises at least one current generating circuit adapted to inject a reference current into a resistive element connected between a base terminal of a bipolar transistor and an additional voltage reference. The bipolar transistor is connected between the first and second voltage references and to an output terminal of the generator circuit whereat the stable reference voltage with respect to temperature is. The generator circuit further comprises at least another resistive element, feedback connected between the output terminal of the generator circuit and the base terminal of the bipolar transistor to enable injecting additional current, having reverse dependence on temperature from the reference current, into the resistive element.

Abstract: The column multiplexer is for a memory matrix having memory cells arranged in rows and columns. The multiplexer includes input lines for input signals, a plurality of output lines for electrical connection to the columns of the matrix, a selective connection device for selecting, in a first operation mode, at least one output line of the plurality of output lines in such a way as to connect it selectively to the input lines. In the first operation mode, the selective connection device selects a first group of output lines among the plurality of output lines, including at least three first lines.

Abstract: A process including the steps of: carrying out a directional etching in a semiconductor material body to form trenches having a first width; carrying out an isotropic etching of the semiconductor material body under the trenches to form cavities having a width larger than the trenches; covering the walls of the cavities with dielectric material; depositing non-conducting material different from thermal oxide to fill the cavities at least partially, so as to form a single-crystal island separated from the rest of the semiconductor material body. The isotropic etching permits the formation of at least two adjacent cavities separated by a support region of semiconductor material, which is oxidized together with the walls of the cavities to provide a support to the island prior to filling with non-conducting material.