Abstract: An amplifier stage for a buffer with negative feedback includes an input stage having an input terminal, an output terminal, a first and a second supply terminal, a biasing branch, a first and a second balancing branch each comprising an active transistor for supplying, at the output terminal, a current depending on the current difference in the first and second balancing branches. The biasing branch and the first and second balancing branches are connected in parallel between the first and second supply terminals. The input terminal divides the biasing branch into two input branches having a constant-current generator. Each active transistor is connected to a corresponding current generator for receiving a control voltage correlated with a voltage at the terminals of the current generator.

Abstract: A semiconductor power device with an insulated control circuit is formed in a chip of semiconductor material having predominantly a first type of conductivity. The device includes a region having a second type of conductivity, buried in the semiconductor material, and at least one insulated region of semiconductor material, containing at least part of the control circuit, disposed between the front surface of the chip and the buried region. The device also includes electrical contacts for the buried region and the semiconductor material. To eliminate the effects of parasitic components, the insulated region is delimited, at least partially, by an insulating dielectric material.

Abstract: A control device for a focusing system of a compact disk (CD) reader is provided. The control device uses fuzzy logic incorporated to the audio data processing system of the CD reader which is adapted to detect and segregate a light beam reflected by the surface of the compact disk from an incident light beam to the surface. The fuzzy logic control device receives a focus error signal and a derivative of the focus error. It then calculates, using appropriate membership functions, output signals to provide to a focusing servo-system of the CD reader to adjust the distance of the focal plane from the light beam detecting circuitry.

Abstract: A circuit for selectively enabling one circuit from among a plurality of circuit alternatives of an integrated circuit, comprising selection circuit means for selecting one among said circuit alternatives. The selection means are controlled by bistable circuit means having a preferred state. Disactivatable forcing means associated to said bistable means are provided for forcing said bistable means in a state opposite than said preferred state, so that when said forcing means are disactivated the bistable circuit means automatically switch to said preferred state.

Abstract: A circuit and method for programming a multilevel nonvolatile memory are disclosed. The circuit uses one or more address pins as one or more synchronization signals during a programming operation. The circuit includes a counter, controlled by the one or more address pins, for selecting a programming voltage to apply to an addressed memory cell. The circuit further includes compare circuitry for comparing the data value stored in the addressed memory cell with a desired data value. The counter is selectively incremented to apply a higher voltage for further programming of the addressed memory cell, based up the comparison.

Abstract: The voltage applied to the gate terminals of the charging transistors and charge-transfer transistors of two parallel pumping branches forming a charge pump is a boosted voltage generated internally and supplied in a crosswise manner. In particular, for driving the charge pump, first and second driving signals are generated respectively for the first and for the second pumping branch via a first and respectively a second driving circuit; the first and second driving signals are also supplied respectively to a first and to a second auxiliary charge pump to obtain respectively first and second voltage-boosted signals; and the first and second boosted voltages are respectively supplied to the second and to the first driving circuit.

Abstract: A high-speed, wide dynamic range, digital accumulator includes a first adder stage in which an input addend is added to a value of a least significant part of an output of an accumulator from a preceding clock period. The accumulator also includes at least one second stage having incrementer/decrementer means for performing an increment, decrement or identity operation on a most significant part of the output of the accumulator. The incrementer/decrementer means includes logic means for triggering the increment, a decrement or identity operation on the most significant part of the accumulator output based on a decision made on results obtained at the previous clock period.

Abstract: An interface for translating data of different voltages includes an input terminal structured to accept an input from a circuit supplied by a power supply having a first voltage level, as well as an output terminal structured to provide an output from the interface a first circuit portion powered by a power supply having the first voltage level, a second circuit portion is powered by a power supply having a second voltage level, and a power supply detection circuit structured to accept a detection signal and to maintain a correct output at the output terminal even after the power supply having the first voltage level no longer supplies the first voltage level to the interface.

Abstract: The invention relates to a method of producing a multi-level memory of the ROM type in a CMOS process of the dual gate type. Specifically, some of the transistors of the ROM cells have their polysilicon layers masked and the ROM cells are then implanted by a first dopant species in the active areas of the exposed transistors. Then the masks are removed from the polysilicon layer, and a second dopant species is implanted in said previously covered layer.

Abstract: A method for automatically calibrating a phase locked loop (PLL) system includes estimating a frequency value of an input signal applied to the system. Based on the estimated frequency value, a driving signal is generated for a plurality of internal switches in the PLL system. A PLL system may also implement this automatic calibration method.

Abstract: A process that includes the steps of forming, in a wafer of monocrystalline silicon, first trenches extending between portions of the wafer; etching the substrate to remove the silicon around the first trenches and forming cavities in the substrate; covering the walls of the cavities with an epitaxial growth inhibiting layer; growing a monocrystalline epitaxial layer on top of the substrate and the cavities so as to obtain a monocrystalline wafer embedding buried cavities completely surrounded by silicon; forming second trenches extending in the epitaxial layer as far as the cavities; removing the epitaxial growth inhibiting layer; oxidizing the cavities, forming at least one continuous region of buried oxide; depositing a polysilicon layer on the entire surface of the wafer and inside the second trenches; removing the polysilicon layer on the surface and leaving filling regions inside the second trenches; and oxidizing, on the top, portions of said filling regions so as to form field oxide regions.

Abstract: A high-efficiency electronic circuit generates and regulates a supply voltage and includes a charge-pump voltage multiplier which is associated with an oscillator and has an output connected to a voltage regulator in order to ultimately output said supply voltage. Advantageously, the circuit comprises a first hysteresis comparator having as inputs the regulator output and the multiplier output, and comprises a second hysteresis comparator having as inputs a reference potential and a partition of the voltage presented on the regulator output. The comparators are structurally and functionally independent of each other, and their outputs are coupled to the oscillator through a logic circuit to modulate the oscillator operation.

Abstract: A CMOS voltage translator having a differential cell circuit portion connected between first and second supply voltage references, and including first and second transistor pairs connected together in series between the supply voltage references. A first divider of the first supply voltage reference for producing a first reduced supply voltage reference on a first internal circuit node, and a second divider of the first supply voltage reference for producing a second reduced supply voltage reference on a second internal circuit node is included, as well as a multiplexer circuit portion connected between the first and second reduced supply voltage references to supply first and second reference voltages to the differential cell circuit portion, respectively on third and fourth internal circuit nodes.

Abstract: The boosted switch device comprises an input terminal and an output terminal; a supply line set to a supply potential; a ground line set to a ground potential; a transistor connected between the input and output terminals; a capacitor; and a switch device connecting the capacitor between the supply line and the ground line, when the transistor is off, and between the input terminal and the control terminal of the transistor, when the transistor is on.

Abstract: A method of modifying the threshold voltages of a plurality of non-volatile memory cells, for example, flash EEPROM memory cells, after an erasure operation, is described. In order to perform the equalization quickly and to optimize the use of the voltage supplies for biasing the columns, the method provides for the following steps: connecting all of the column lines to a voltage supply, monitoring the supply voltage, and applying, to all of the row lines, a voltage variable from a predetermined minimum value to a predetermined maximum value, the rate of change being regulated to maintain the supply voltage of the column lines at a substantially constant, predetermined value. The same method can be used for reliable and quick programming of a memory of the flash EEPROM type, or of another type.

Abstract: A metal frame patterned by die stamping has the outermost end portion of each patterned pin extending freely, without constraints, from a line of metal bridge connections (dam bar). The end face of each pin is also covered, as well as other surfaces of the frame, by a coating layer or multilayer of metals different from the metal of the die stamped frame. The coating layer or multilayer contains at least on its outer surface, a noble metal such as palladium or gold. The tip of the pins are not subject to cutting and/or trimming after plating the die stamped frame. The pins are not even cut or trimmed during separation of the patterned frame from the surrounding metal at the end of the encapsulation process, when the pins are then eventually bent into shape.

Abstract: A MOS-type power device having a drain terminal, a source terminal, and a gate terminal; and a protection circuit having a first conduction terminal connected to the gate terminal, via a diffused resistor, and a second conduction terminal connected to the source terminal. The protection circuit has a resistance variable between a first value and a second value according to the operating condition of the power device. In a first embodiment of the protection circuit, an ON-OFF switch made by means of a horizontal MOS transistor has a control terminal connected to the drain terminal of the power device. In a second embodiment of the protection circuit, the ON-OFF switch is replaced with a gradual-intervention switch made by means of a P-channel JFET transistor having a control terminal connected to the gate terminal of the power device.

Abstract: The amplifier circuit includes at least one amplification branch having an input transistor, an output transistor, having a source terminal connected to the input terminal and a drain terminal connected to a first output terminal, and a gain raising stage, having an input and an output connected to the source terminal and, respectively, to a gate terminal of the output transistor. The amplifier circuit includes, moreover, a compensation capacitor connected between the gate terminal and the drain terminal of the output transistor.

Abstract: A receiver in a data read channel has an input terminal for receiving an input signal provided by a transmitter of the data read channel, and produces an output signal at an output terminal. The receiver includes a finite impulse response (FIR) filter coupled to the input terminal and having filter coefficients capable of being adapted, an interpolated timing-recovery circuit coupled to an output of the FIR filter, the timing-recovery circuit having an output signal coupled to the output terminal of the receiver, and a timer circuit coupled to the output terminal and feedback connected to the timing-recovery circuit, wherein the coefficients of the timing-recovery circuit are dynamically adapted using a cost weighted function through a signal power spectrum of the data read channel.

Abstract: An oversampling electromechanical modulator, including a micro-electromechanical sensor which has a first sensing capacitance and a second sensing capacitance and supplies an analog quantity correlated to the first sensing capacitance and to the second sensing capacitance; a converter stage, which supplies a first numeric signal and a second numeric signal that are correlated to the analog quantity; and a first feedback control circuit for controlling the micro-electromechanical sensor, which supplies an electrical actuation quantity correlated to the second numeric signal.