Abstract: An electric connection structure connecting a first silicon body to conductive regions provided on the surface of a second silicon body arranged on the first body. The electric connection structure includes at least one plug region of silicon, which extends through the second body; at least one insulation region laterally surrounding the plug region; and at least one conductive electromechanical connection region arranged between the first body and the second body, and in electrical contact with the plug region and with conductive regions of the first body. To form the plug region, trenches are dug in a first wafer and are filled, at least partially, with insulating material. The plug region is fixed to a metal region provided on a second wafer, by performing a low-temperature heat treatment which causes a chemical reaction between the metal and the silicon. The first wafer is thinned until the trenches and electrical connections are formed on the free face of the first wafer.

Abstract: A method for designing a new prunable S-random interleaver class to be used as a constituent part of turbo codes. With respect to previously proposed solutions the method has the advantage of being prunable to different block sizes while exhibiting at the same time, for any considered block size, performance comparable with the optimized “ad hoc” S-random interleavers. Another advantage is that, as for every S-random interleaver, the design rules are independent of the constituent codes and of the puncturing rate applied to the turbo code. Therefore, these interleavers potentially can find applications in any turbo code scheme that requires interleaver size flexibility and code rate versatility, thanks to the advantage of requiring a single law storage (i e., one ROM storage instead of several ROMs) from which all the others are obtained by pruning, without compromising the overall error rate performance.

Abstract: Sensing circuitry for reading and verifying the contents of electrically programmable and erasable non-volatile memory cells, comprises a sense amplifier having a first sensing circuit portion connected to a cell to be read and provided with an output terminal for connection to a first input terminal of a comparator, and having a second reference circuit portion connected to a reference current generator and provided with an output terminal for connection to a second input terminal of said comparator, characterized in that said first and said second circuit portions comprise a series of first and second transistors, respectively, being connected between a first voltage reference and a second voltage reference and having respective points of interconnection connected to said output terminals of said first and second circuit portions.

Abstract: The circuit for generating reference voltages for reading a multilevel memory cell includes the following: a first memory cell and a second memory cell respectively having a first reference programming level and a second reference programming level; a first reference circuit and a second reference circuit respectively connected to said first and said second memory cells and having respective output terminals which respectively supply a first reference voltage and a second reference voltage; and a voltage divider having a first connection node and a second connection node respectively connected to the output terminals of the first reference circuit and of the second reference circuit to receive, respectively, the first reference voltage and the second reference voltage, and a plurality of intermediate nodes supplying respective third reference voltages at equal distances apart.

Abstract: Three-dimensional analysis of surface defects and microdefects of an object is performed by correlating two images of the surface of the object based upon a stereoscopic view thereof. Analyzing surface defects may be implemented by integrating, in a single monolithic component made using VLSI CMOS technology, an optical sensor with a cellular neural network. The optical sensor includes a matrix of cells configured as analog processors.

Abstract: The present invention refers to a fully differential operational amplifier of the folded cascode type. In one embodiment the fully differential operational amplifier comprises: a differential input stage able to drive a differential output stage; said differential output stage includes a first branch having at least a first and a second transistor, and a second branch having at least a third and a fourth transistor; said first and second branch are coupled to a first and a second voltage source; a feedback circuit of said first, second, third and fourth transistors that is constituted by a single amplifier having four inputs and four outputs, said four inputs taking the voltages present on a terminal of said first, second, third and fourth transistors, and providing voltages to the control elements of said first, second, third and fourth transistors, which voltages depend on the input voltages of said four inputs.

Abstract: A method enhances selectivity between a film of a light-sensitive material and a layer to be subjected to etching in the course of fabrication processes of an electronic semiconductor device starting from a semiconductor material wafer. The method includes radiating the wafer with an ion beam subsequently to depositing the layer to be etched and defining a circuit pattern on the film of light-sensitive material. An alternative method exposes the wafer to a non-reactive gas medium under plasma rather than radiating the wafer with an ion beam.

Abstract: A read and analog-to-digital data conversion channel includes an input circuit receiving an input data stream, and a time interleaved analog-to-digital converter connected to the input circuit. The time interleaved analog-to-digital converter includes a pair of analog-to-digital converters functioning in parallel and at half the clock frequency. A signal path through the time interleaved analog-to-digital converter is subdivided into two parallel paths through the pair of analog-to-digital converters. There is a first path for even bits and a second path for odd bits. A digital post-processing circuit is connected to the two parallel paths of the time interleaved analog-to-digital converter, and has an output providing a reconstructed data stream. At least one adjusting digital-to-analog converter is connected between the digital post-processing circuit and the input circuit for control thereof.

Abstract: An electronic power device is integrated monolithically in a semiconductor substrate. The device includes a power region, itself having at least one P/N junction provided therein which comprises a first semiconductor region with a first type of conductivity extending into the substrate from the top surface of the device and being diffused into a second semiconductor region with the opposite conductivity from the first; and an edge protection structure of substantial thickness and limited planar size incorporating at least one trench filled with dielectric material.

Abstract: The high-gain photodetector is formed in a semiconductor-material body which houses a PN junction and a sensitive region that is doped with rare earths, for example erbium. The PN junction forms an acceleration and gain region separate from the sensitive region. The PN junction is reverse-biased and generates an extensive depletion region accommodating the sensitive region. Thereby, the incident photon having a frequency equal to the absorption frequency of the used rare earth crosses the PN junction, which is transparent to light, can be captured by an erbium ion in the sensitive region, so as to generate a primary electron, which is accelerated towards the PN junction by the electric field present, and can, in turn, generate secondary electrons by impact, according to an avalanche process. Thereby, a single photon can give rise to a cascade of electrons, thus considerably increasing detection efficiency.

Abstract: A method of re-programming an array of non-volatile memory cells after an erase operation is provided where a re-program operation is executed to restore a threshold voltage of the memory cells to a higher value than a depletion verify voltage value. The method may include identifying a first value of the depletion verify voltage, executing the re-program operation using the value of the depletion verify voltage, and verifying the array of re-programmed cells for reliability in a read mode. If the outcome of the verifying step is favorable, the re-program operation is terminated as successful. Otherwise, the value of the depletion verify voltage is modified, and the re-program operation is again executed using the modified value of the depletion verify voltage as adjusted for the actual operating conditions of the memory array.

Abstract: An electronic power device is integrated on a semiconductor substrate having a first conductivity type, on which an epitaxial layer of the same conductivity type is grown. The power device comprises a power stage and a control stage, this latter enclosed in an isolated region having a second conductivity type. The power stage comprises a first buried area having the second conductivity type and a second buried area, partially overlapping the first buried area and having the first conductivity type. The control stage comprises a third buried area, having the second conductivity type, and a fourth buried area, partially overlapped to the third buried area and having the first conductivity type. Said first, second, third and fourth buried areas are formed in the epitaxial layers at a depth sufficient to allow the power stage and the control stage to be entirely formed in the epitaxial layer.

Abstract: A reading circuit for a memory includes a current detector for each bit line of the memory, a reference voltage generator, and a comparator that compares the reference voltage with the voltage of a reading terminal of the current detector. Each current detector includes a first transistor whose gate is selectively connected to the reading terminal, and whose drain-source path is in series with a respective bit line. An input of a first inverter stage is connected to the source of the first transistor, and an output thereof is connected to the gate of the first transistor. The circuit has a very short reading time based upon each of the current detectors including a first resistor between the source of the first transistor and the bit line, along with second and third transistors having their drain-source paths connected in series with the respective bit line, and along with second and third inverters connected to the respective bit line.

Abstract: High density MOS technology power device structure, including body regions of a first conductivity type formed in a semiconductor layer of a second conductivity type, wherein the body regions include at least one plurality of substantially rectilinear and substantially parallel body stripes each joined at its ends to adjacent body stripes by junction regions, so that the at least one plurality of body stripes and the junction regions form a continuous, serpentine-shaped body region.

Abstract: Process for forming salicide on active areas of MOS transistors, each MOS transistor comprising a gate and respective source and drain regions, the source and drain regions each comprising a first lightly doped sub-region adjacent the gate and a second highly doped sub-region spaced apart from the gate. The salicide is formed selectively at least over the second highly doped sub-regions of the source and drain regions of the MOS transistors, and not over the first lightly doped sub-region.

Abstract: A method and circuit computes a Discrete Cosine Transform in a more efficient manner for improving the computation speed, thereby reducing the computation time and allowing a higher number of digital samples to be processed. The circuit provides a microcontroller that includes a parallel accumulation multiplier for performing a first transform of the input data. A further quantization step is then performed on the transformed data. Likewise, the method includes the first transform being computed by the parallel accumulation multiplier. A further quantization step is performed on the transformed data. In this respect, the method and circuit provides good performance in terms of compression rate.

Abstract: A circuit system suitable for codifying NRZ type binary signals into CMI type binary signals includes a plurality of bistable means, an EXOR type logical gate, a presynchronization device and a combinatory logic device capable of creating a CMI type binary signal by codifying with an identical circuit path the “1” bits and “0” bits, sequence of bit present in the NRZ type binary signals.

Abstract: A circuit device for performing hierarchic row decoding in semiconductor memory devices of the non-volatile type, which memory devices include an array of memory cells with column-ordered sectors, wherein each sector has a respective group of local wordlines linked to a main wordline. The circuit device includes a main wordline driver provided at each main wordline, and a local decoder provided at each local wordline. This circuit device further comprises, for each main wordline, a dedicated path connected between the main wordline and the local decoders of the associated local wordlines and connected to an external terminal arranged to receive a read/program voltage, the dedicated path enabling transfer of the read/program voltage to the local decoders.

Abstract: The multilevel memory device has a memory section containing cells that can be programmed with a predetermined number of levels greater than two, i.e., a multilevel array, and a memory section containing cells that can be programmed with two levels, i.e., a bilevel array. The multilevel array is used for storing high-density data, for which speed of reading is not essential, for example for storing the operation code of the system including the memory device. On the other hand, the bilevel array is used for storing data for which high speed and reliability of reading is essential, such as the BIOS of personal computers, and the data to be stored in a cache memory. The circuitry parts dedicated to programming, writing of test instructions, and all the functions necessary for the operation of the memory device, can be common to both arrays.

Abstract: A noise compensating device in a discrete time control system, such as a R/W system for hard disks, including: a control loop generating a first timing signal, a signal indicative of a quantity to be controlled, and a control signal, which have a first frequency; and an open loop control line which generates a compensation signal synchronous with the control signal and includes a sensor. The sensor includes a sensing element, generating an analog signal, an acquisition stage, connected to the sensing element and generating a disturbance measure signal correlated to the analog signal and synchronous with the control signal, and a synchronization stage. The synchronization stage includes a frequency generator having an input receiving the first timing signal and a first and a second output connected to the acquisition stage and generating, respectively, a second timing signal and a third timing signal.