Abstract: The invention includes a multichip integrated circuit package having at least two chips electrically isolated from one another. Within the multichip integrated circuit package is a slug that is directly coupled to at least two chips, without any intervening insulating layers. The slug is physically separated at an appropriate place between the two chips, so that electrical interference between the two chips is effectively eliminated. Making the integrated circuit package begins with directly attaching the two chips to a heat dissipating slug. The heat dissipating slug can have a pre-cut groove running between the chips. Once the chips are attached to the slug, the slug is molded into the multichip integrated circuit package. Then, the slug is physically separated into two pieces from the underside, the separation running along the pre-cut groove. Usually the slug would be separated by being cut by a saw.

Abstract: A PWM power amplifier having at least one PCM/PWM converter fed by PCM digital input signals and producing PWM digital output signals, and at least one power amplification final stage of the PWM digital output signals. At least one PCM/PWM converterincludes a counter fed with at least one clock signal produced by a clock generator device and having a digital comparator suitable for comparing the PCM digital input signals of at least one PCM/PWM converter with a digital comparison signal produced by the counter and producing in output the PWM digital signals. The clock generator device includes a pulse generator device and an oscillator; the pulse generator device receives a signal at a frequency that is equal to the frequency of the PCM digital input signals of the at least one PCM/PWM converter and produces in output reset pulses. The reset pulses are sent in input to the oscillator, which produces in output the at least one clock signal.

Abstract: A method is for forming an intermediate dielectric layer to optimize the planarity of electronic devices integrated on a semiconductor which incorporate non-volatile memories. The insulating dielectric is deposited from a liquid state source comprising silicon oxides and organics of the resist type. The liquid dielectric layer is evenly spread by a spinning technique providing good levels of planarity. Solidification, referred to as polymerization, is achieved through a low-temperature thermal cycle. Since this dielectric layer cannot be used as such to isolate the semiconductor substrate from the overlying metallization plane on account of the presence of organics forming a source of impurities, it is arranged for the layer to be encapsulated between two dielectric layers of silicon oxide as deposited from a plasma.

Abstract: A reading circuit having an array branch connected via an array bit line to an array memory cell, the content of which is to be read; a reference branch connected via a reference bit line to a current generator stage supplying a reference current; a current/voltage converter stage connected to the array branch and to the reference branch, and supplying at an array node and at a reference node respectively an array potential and a reference potential, which are correlated to the currents flowing respectively in the array branch and in the reference branch; a comparator stage connected to the array node and the reference node for comparing the array and reference potentials; a sample and hold stage arranged between the array node and the comparator stage and selectively operable to sample and hold the array potential; and a switching off stage for switching off the array branch.

Abstract: The voltage converter circuit has first and second input terminals, and first and second output nodes, and comprises: a first power switch connected between the first input terminal and the first output node; a second power switch connected between the first output node and the second input terminal; a first delay circuit having first and second terminals connected between the first input terminal and a control terminal of the first power switch; and a second delay circuit having first and second terminals connected between the first output terminal and a control terminal of the second power switch. Each delay circuit detects a variation in the voltage supplied on the respective first terminal and detects an operating condition of the respective power switch on the second terminal, and supplies to the control terminal of the respective power switch a switching on delay signal.

Abstract: A redundancy architecture for a memory includes an array of memory cells divided into at least a pair of semi-arrays that are singularly addressable. Each semi-array is organized into rows and columns. The redundancy architecture includes a number of packets each including redundancy columns. The packets are divided into two subsets of packets. Each packet is addressable independently from the other by respective address circuits. Each packet also provides redundancy columns exclusively for a respective semi-array.

Abstract: Non-volatile, electrically alterable semiconductor memory, including at least one two-dimensional array of memory cells with a plurality of rows and a plurality of columns, column selection circuitry for selecting columns among the plurality of columns, and a write circuit for simultaneously writing a first number of memory cells. A plurality of doped semiconductor regions is provided, extending transversally to the rows and subdividing a set of memory cells of each row in a corresponding plurality of subsets of memory cells, each subset of memory cells including memory cells of the row formed in a respective doped semiconductor region distinct from the remaining doped semiconductor regions and defining an elementary memory block that can be individually erased.

Abstract: Described herein is a method for constructing a multipurpose error-control code for multilevel memory cells operating with a variable number of storage levels, in particular for memory cells the storage levels of which can assume the values of the set {ba1, baaa2, . . . , ba1a2. . . ah}, with b, a1, . . . , ah positive integers; the error-control code encoding information words, formed by k q-ary symbols, i.e., belonging to an alphabet containing q different symbols, with q&egr;{ba1, ba1a2, . . . , ba1a2ah}, in corresponding code words formed by n q-ary symbols, with q=ba1a2ah, and having an error-correction capacity t, each code word being generated through an operation of multiplication between the corresponding information word and a generating matrix. The construction method comprises the steps of: acquiring the values of k, t, ba1, ba1a2, . . . , ba1a2. . .

Abstract: A method of controlling the quantity and uniformity of distribution of bonded oxygen atoms at the interface between the polysilicon and the monocrystalline silicon includes carrying out, after having loaded the wafer inside the heated chamber of the reactor and evacuated the chamber of the LPCVD reactor under nitrogen atmosphere, a treatment of the wafer with hydrogen at a temperature generally between 500 and 1200° C. and at a vacuum generally between 0.1 Pa and 60000 Pa. The treatment is performed at a time generally between 0.1 and 120 minutes, to remove any and all the oxygen that may have combined with the silicon on the surface of the monocrystalline silicon during the loading inside the heated chamber of the reactor even if it is done under a nitrogen flux. After such a hydrogen treatment, another treatment is carried out substantially under the same vacuum conditions and at a temperature generally between 700 and 1000° C. with nitrogen protoxide (N2O) for a time generally between 0.

Abstract: A chaotic signal generator includes a set of elements connected together for generating chaotic signals. The connection scheme may correspond to the circuit generally referred to as Chua's circuit, particularly when implemented as a cellular neural network. Interposed in the connection scheme is at least one switch, such as a MOS transistor. Opening and closing of the switch causes variation in the chaotic dynamics of the generated signals. A command signal applied to the switch may correspond to a modulating signal for transmission on a channel, such as a high noise channel. The modulating signal may be a binary signal, and the command signal may be a switching signal having a frequency that increases or decreases depending on the logic level of the binary signal.

Abstract: A rectifying integrator of an input signal with full output dynamics, relative to a voltage reference intermediate with respect to the dynamics of the input signal, includes a first line of integration having at least one integrator for integrating that portion of the input signal that exceeds the voltage reference, and includes a hold capacitor coupled in cascade to the integrator. The rectifying integrator includes a second line of integration, identical to the first line of integration, for integrating that portion of the input signal that remains below the voltage reference. An adder output stage generates an output signal equal to the difference between the voltages existing on the hold capacitors of the first and second lines of integration.

Abstract: A pre-charging circuit for the output node of an output buffer of an integrated digital system generates a first pulse for enabling the output of new data and a second pulse having a shorter duration than the first pulse for loading the new data in an output data register. The output data register is coupled to the input of the output buffer. A capacitor is connected in parallel to the load capacitance of the output node of the buffer by a pass-gate. The pass-gate is enabled by a pre-charge command corresponding to the logic AND of the second pulse and of the logic XOR of the new data and the data currently present on the output node. A driver is disabled by the first pulse for charging the capacitor to a voltage corresponding to the logic level of data belonging to the group that includes the new data and a logic inversion of the current data.

Abstract: A method for arbitrating interrupt priorities among peripherals in a microprocessor-based system includes providing a bus which connects a central processing unit (CPU) to a plurality of peripherals and for transmitting a current priority value of the CPU thereon. The method further includes waiting-for activation of an interrupt line connecting all the peripherals and the CPU by the peripherals having a CPU interrupt request priority which is at least equal to, or greater than, the priority of the CPU. The highest priority among the CPU interrupt requests is determined, and the bus is provided with the value of the corresponding interrupt request.

Abstract: A method for removing residues of molding material from metal parts of plastic packages of semiconductor devices includes applying first and second pulsed laser radiations to at least one surface region of a metal part covered with residues of molding material. The first pulsed laser radiation has a first wavelength that is absorbed by residues of molding material having a thickness greater than a prescribed thickness. The intensity and the duration of the first pulsed laser radiation causes the residues to be directly attacked. The second pulsed laser radiation has a second wavelength so that residues of molding material having a thickness less than the prescribed value are at least partially transparent and the metal parts are at least partially absorbent. The intensity and the duration of the second pulsed laser radiation causes the formation of plasma at the point of impact with the metal part.

Abstract: An integrated device comprises an epitaxial layer forming a first and a second region separated by at least one air gap. The first region forms, for example, a suspended mass of an accelerometer. A bridge element extends on the air gap and has a suspended electrical connection line electrically connecting the first and the second region and a protective structure of etch-resistant material, which surrounds the electrical connection line on all sides. The protective structure is formed by a lower portion of silicon nitride and an upper portion of silicon carbide, the silicon carbide surrounding the electrical connection line at the upper and lateral sides.

Abstract: The optimized soft programming method is used in a memory consisting of a plurality of cells that are grouped into sectors. The cells that belong to a single sector have gate terminals connected to a plurality of word lines, and drain terminals connected to a plurality of local bit lines. The soft programming method consists of selecting at least one local bit line in the sector, and simultaneously selecting all the word lines in the same sector. A corresponding gate voltage is applied to all the word lines, whereas a constant drain voltage, with a pre-determined value is applied to the local bit line.

Abstract: An interleaved memory having an interleaved data path includes an array of memory cells divided into a first bank of memory cells and a second bank of memory cells, first and second arrays of sense amplifiers respectively coupled to the first and second bank of memory cells, and first and second read registers respectively coupled to the first and second arrays of sense amplifiers. A control and timing circuit is connected to the first and second arrays of sense amplifiers and has inputs for receiving externally generated command signals, and outputs for providing path selection signals and a control signal. A third register is connected to the first and second read registers and has inputs for receiving read data therein as a function of the path selection signals. An array of pass-gates are connected to the third register and are controlled in common by the control signal for enabling a transfer of the read data stored in the third register to an array of output buffers.

Abstract: It is described a programming method for a multilevel memory cell able to store a plurality of bits in a plurality of levels. The method comprises the phases of: initially programming a cell threshold value to a first set of levels [0;(m−1)] being m a submultiple of the plurality of levels of the multilevel cell; reprogramming without erasing another set of levels [m;(2m−1)] containing the same number m of levels as the first set; reiterating the reprogramming without erasing phase until the levels of the multilevel cell are exhausted. It is also described a multilevel memory device of the type comprising a plurality of multilevel memory cells organized into sectors, the sectors being themselves split into a plurality of data units wherein a data updating operation is performed in parallel, the data units being programmed by means of the programming method.

Abstract: The method for reading a memory cell includes supplying the cell with a first charge quantity through a capacitive integration element and reintegrating the first charge quantity through a plurality of second charge quantities supplied alternately and in succession to the capacitive integration element. In a first embodiment, the second charge quantities are initially stored in a plurality of capacitive charge-regeneration elements connected alternately and in succession to the capacitive integration element; the second charge quantities are then shared between the capacitive integration element and the capacitive charge-regeneration elements.

Abstract: A process for converting signals in the form of digital data, such as various types of video/audio/data signals for example, between an original format, in which each data item includes a certain number of digits, and a compressed format, in which each data item includes a smaller number of digits. The process includes the operation of associating the data with a configuration including: a first field identifying the number of sub-blocks into which the said certain number of digits are subdivided, a second field that identifies, within the said sub-blocks, respective sections, each one including a given number of digits, and a third field that identifies, for each these sections, one of a plurality of applicable modes (average, compression, transmission “as is”, etc.) that can be adopted for converting the digits in the section between the original format and the compressed format.