Abstract: An electronic circuit is for optimizing or reducing switching losses in current-driven power devices and includes a switching power device connected to an electric load. The power devices has at least one control terminal arranged to receive a predetermined drive current value produced by a first current generator. The control terminal also receives an additional drive current portion produced by a second independent current generator. Advantageously, the electronic circuit includes a control circuit for controlling a switch connected between the second current generator and the control terminal of the switching power device during the turn-on and turn-off phases of the power device.

Abstract: A temperature control system and method for integrated circuits, particularly those having a plurality of channels or power devices. The temperature control system for an integrated circuit includes at least a heat generating device; a sensor element providing a signal correlated to the working conditions of said the heat generating device such as a signal proportional to the dissipated power of the heat generating device; an elaboration circuit of the signal correlated to the working conditions of the heat generating device; and a turning off circuit of said at least a heat generating device responsively to a signal of said elaboration circuit.

Abstract: Through a comparison of the values of pixels of a first candidate predictor macroblock having pixels in homologous positions to those of a reference macroblock of identical position on the frame to that of the macroblock being estimated on a reference frame of the present sequence of picture frames, a pre-established cost function is evaluated for each comparison. The best predictor is the one producing the minimum value of cost function. The comparison may even include the summing to each predictor candidate of an update vector of smaller dimensions than the macroblocks, chosen among a plurality of pre-established update vectors, for accelerating the convergence process of the comparison.

Abstract: A Flash EEPROM having negative voltage generator means for generating a negative voltage to be supplied to control gate electrodes of memory cells for erasing the memory cells. The Flash EEPROM also has first positive voltage generator means for generating a first positive voltage, independent from an external power supply of the Flash EEPROM, to be supplied to source regions of the memory cells during erasing.

Abstract: The present invention relates to method to improve RF measurements accuracy on an automatic testing equipment (ATE) for IC wafers by implementing a test board de-embedding phase, wherein each wafer includes a device under test located on a wafer die plane and being contacted by probecard needles of a probecard that is coupled to a configuration board through a probe interface board (PIB), the method including the following phases: performing an automatic calibration phase of the testing equipment up to an internal plane located inside the automatic testing equipment; performing a calibration plane transfer up to a plane of the configuration board using a predetermined number of calibration standard loads realized on the wafer; performing a test boards de-embedding phase up to the wafer die plane.

Abstract: The boost device comprises a charge pump circuit having an input and a main output between which an input stage, an intermediate stage and a main output stage are cascade connected. The charge pump circuit also comprises a stand-by output stage having an input node connected to an output node of said intermediate stage and an output node connected to a stand-by output of the charge pump circuit. The boost device further comprises a phase generator stage having a signal input receiving a suitable clock signal generated by a clock generator stage and output terminals generating phase signals supplied to phase inputs of the charge pump circuit.

Abstract: The compression and coding of digital data pertaining to video sequences of pictures including motion estimation for removing temporal redundance are provided by recognizing the occurrence of a change of a scene to control the prediction computation of the pictures. This control is provided using a forward motion estimation for pictures preceding the change of scene, and using a backward motion estimation for pictures subsequent the change of scene of a given sequence. A change of a scene is reliably detected by checking two distinct indexes. These indexes are based on an average value of a smoothness index of the preestablished number of last processed pictures. The smoothness index of a motion field of each picture is calculated by analyzing the motion vectors for all the macroblocks of a subdivision of the picture, except for the peripheral macroblocks. Spurious detections in the event of noisy pictures, zooming and other situations that may adversely affect either one of the indexes are prevented.

Abstract: A method of identifying fingerprints, the method including the steps of acquiring a test image formed by a number of test points characterized by different grey levels defining a test surface; determining significant points in the test image; and verifying the similarity between regions surrounding the significant points and corresponding regions of a reference image whose points present different grey levels defining a reference surface. The similarity between the regions is verified by computing the integral norm of portions of the test and reference surfaces; and the integral norm is computed using flash cells programmed with a threshold value correlated to the value of the grey levels in the reference region, by biasing the flash cells with a voltage value correlated to the grey level in the test region, and measuring the charge flowing through the flash cells.

Abstract: A circuit for reading a non-volatile memory cell has an output terminal for providing an output current, and a control terminal for receiving a voltage for controlling the output current. The reading circuit includes a feedback circuit which can be connected electrically to the output terminal and to the control terminal to generate the control voltage from a reference signal and from the output current. The feedback circuit also includes a current-amplification circuit having a first terminal for receiving a current-error signal derived from the reference signal and from the output current, and a second terminal for supplying an amplified current.

Abstract: A simplified DSCP process makes non-self-aligned floating gate semiconductor memory cells of the FLOTOX EEPROM type as incorporated to a cell matrix having control circuitry associated therewith, wherein each cell has a selection transistor associated therewith. The process includes at least the following steps: growing or depositing a gate dielectric layer of the selection transistor and the cell; tunnel masking to define the tunnel area with a dedicated etching step for cleaning the semiconductor surface; growing the tunnel oxide; depositing and doping the first polysilicon layer poly1.

Abstract: A semiconductor memory includes a plurality of memory cells connected to one another to form a matrix of memory cells. A charge pump is connected to the matrix of memory cells. A plurality of controllable connection elements are provided, with each controllable connection element connected between an output terminal of the charge pump and a respective column line. Connected to the output of the charge pump is the series connection of a first element equivalent to a controllable connection element, and a second element equivalent to a memory cell in a predetermined biasing condition. A voltage regulator is connected between the second equivalent element and the input terminal of the charge pump for regulating the output voltage therefrom based upon a voltage present between terminals of the second equivalent element.

Abstract: A system for controlling and driving an electromagnetic actuator includes a unique operational amplifier in the regulation loop for driving the electromagnetic actuator and for monitoring, during different phases of operation, the current in the actuator and the back electromotive force. The new architecture allows for a considerable reduction of the area of integration of the system as a whole.

Abstract: The present invention relates to a start up circuit for commutation power supplies (PWM) or DC/DC converters and to a commutation type power supply comprising such a start up circuit.

Abstract: A nonvolatile memory having a NOR architecture has a memory array including a plurality of memory cells arranged in rows and columns in NOR configuration, the memory cells arranged on a same column being connected to one of a plurality of bit lines; and a column decoder. The column decoder comprises a plurality of selection stages, each of which is connected to respective bit lines and receives first bit line addressing signals. The selection stages comprise word programming selectors controlled by the first bit line addressing signals and supplying a programming voltage to only one of the bit lines of each selection stage. Each selection stage moreover comprises a string programming selection circuit controlled by second bit line addressing signals thereby simultaneously supplying the programming voltage to a plurality of the bit lines of each selection stage.

Abstract: A method for forming an conductive interconnection in an electronic semiconductor device includes forming a layer of insulating material on a substrate of semiconductor material having a contact region therein, and forming a first opening through the layer of insulating material to expose the contact region. The first opening is filled with a material to form a first connection element. A first layer comprising a first removable conductive material is formed adjacent the layer of insulating material and the first connection element. The method further includes forming a second opening in the first layer to expose the first connection element, and filling the second opening with the material to form a second connection element. The first removable conductive material is removed except for a portion underlying the second connection element to expose the layer of insulating material. The areas left free after removing the first removable conductive material are filled with a dielectric material.

Abstract: The integrated device comprises a PMOS transistor and a voltage selector having an output connected to the bulk terminal of the PMOS transistor. The voltage selector comprises an input stage supplying a supply voltage or a programming voltage according to whether the device is in a reading step or in a programming step; a comparator connected to the output of the input stage, receiving a boosted voltage, and generating a first control signal, the state whereof depends upon the comparison of the voltages at the inputs of the comparator; a logic circuit connected to the output of the comparator and generating a second control signal, the state whereof depends upon the state of the first control signal and of a third-level signal; and a switching circuit controlled by the first control signal, by the second control signal, and by the third-level signal and supplying each time the highest among the supply voltage, the boosted voltage, and the programming voltage.

Abstract: Bandgap type reference voltage source using an operational transimpedance amplifier. The bandgap stage is formed by a first and a second bandgap branch parallel-connected; the first bandgap branch comprises a first diode and a transistor, series-connected and forming a first output node; the second bandgap branch comprises a second diode and a second transistor series-connected and forming a second output node. The operational amplifier has inputs connected to the output nodes of the bandgap stage. An amplifier current detecting stage is connected to the outputs of the operational amplifier and supplies a current related to the current drawn by the operational amplifier. A diode current detecting stage is connected to the output of the amplifier current detecting stage and to an output of the operational amplifier and supplies a current related to the current flowing in the first diode. An output stage transforms this current into a stabilized voltage.

Abstract: A process of fabricating a floating-gate memory device, the process including the steps of: forming a stack of superimposed layers including a floating gate region, a dielectric region, and a control gate region; and forming an insulating layer of oxynitride to the side of the floating gate region to completely seal the floating gate region outwards and improve the retention characteristics of the memory device. The insulating layer is formed during reoxidation of the sides of the floating gate region, after self-align etching the stack of layers and implanting the source/drain of the cell.

Abstract: The integrated inductor comprises a coil of metal which is formed in the second metal level. The coil is supported by a bracket extending above spaced from a semiconductor material body by an air gap obtained by removing a sacrificial region formed in the first metal level. The bracket is carried by the semiconductor material body through support regions which are arranged peripherally on the bracket and are separated from one another by through apertures which are connected to the air gap. A thick oxide region extends above the semiconductor material body, below the air gap, to reduce the capacitive coupling between the inductor and the semiconductor material body. The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

Abstract: Regulation of the output voltage of a power supply employing a flyback-type self-oscillating DC—DC converter employing a transformer. The primary winding circuit of the transformer senses a current recirculation loop for discharging the energy cyclically stored in an auxiliary winding of the self-oscillation loop of the converter such as to represent a replica of the circuit of the secondary winding of the transformer and by summing a signal representative of the level of the energy stored in the auxiliary winding with a drive signal on a control node of a driver of the power switch of the converter.