Abstract: In a junction isolated integrated circuit including power DMOS transistors formed in respective well regions or in an isolated epitaxial region on a substrate of opposite type of conductivity, circuits are formed in a distinct isolated region sensitive to oversupply and/or belowground effects. These effects are caused by respective power DMOS transistors coupled to the supply rail or ground. These effects are alternatively controllable by specifically shaped layout arrangements, and may be effectively protected from both effects. This is achieved by interposing between the region of sensitive circuits and the region containing the power DMOS transistors for which the alternatively implementable circuital arrangements are not formed, the region containing the power DMOS transistors coupled to the supply rail or to a ground rail for which the alternatively implementable arrangements are formed.

Abstract: A redundancy UPROM cell includes at least one memory element of EPROM or Flash type, having a control terminal and a conduction terminal to be biased, an inverter register connected to the memory element by at least one MOS transistor. Such cell also includes a pass transistor which connects said conduction terminal to a data line and a pull-up transistor which connects the data line to a supply voltage reference. The UPROM cell has the great advantage to result in smaller dimensions in comparison with the cells of known type, at equal final functions and performances being assumed.

Abstract: An integrated circuit sample package is provided for checking electrical functionality and alignment of a checking device. The checking device includes a contactor and equipment for checking mechanical and electrical features of at least one integrated circuit device. The integrated circuit sample package substantially reproduces the external envelope of the integrated circuit device and is manufactured from an electrical conducting material that is resistant to mechanical wear. In one preferred embodiment, the integrated circuit sample package includes a body that substantially reproduces the external envelope of the body of the integrated circuit device, and offshoots that substantially reproduce the external envelope of the terminals of the integrated circuit device. A method for checking electrical functionality and alignment of a checking device is also provided.

Abstract: A transconductor includes a differential stage formed by a pair of input transistors, and a resistive line of degeneration connecting the sources of the input transistors. A bias current generator is coupled between the source of each input transistor and ground. The resistive line of degeneration is formed by one or more transistors connected in series, the gates of which are coupled to a voltage reference. The voltage reference is at least equal to the common mode voltage of the differential stage. The one or more transistors forming the resistive line of degeneration are sized to operate in the triode region.

Abstract: A semiconductor power device comprising an insulated gate bipolar transistor, of the type which comprises a semiconductor substrate with a first type of conductivity and an overlying epitaxial layer with a second type of conductivity, opposite from the first, and whose junction to the substrate forms the base/emitter junction of the bipolar transistor, has the junction formed by a layer of semiconductor material with conductivity of the second type but a higher concentration of dopant than that of the epitaxial layer. Furthermore, the device has the epitaxial layer with conductivity of the second type provided with at least two zones at different dopant concentrations, namely a first lower zone being part of the junction and having a higher dopant concentration, and a second upper zone having a lower concentration.

Abstract: A low noise adaptive bias circuit is provided for a low noise bipolar junction input transistor having an emitter degeneration inductance, of an integrated high frequency functional circuit driven by the collector current of the input transistor. The bias circuit includes a shunt line connecting the base node of the input transistor to a first supply node of opposite sign of that of a second supply node to which is coupled, through the degeneration inductance, to the emitter of the input transistor. The shunt line includes a bias current generator dependent, in an inversely proportional manner, on the current gain of the input transistor, and a resistance dependent, in a directly proportional manner, on the current gain of the input transistor.

Abstract: A digital image color correction device and method employing fuzzy logic, for correcting a facial tone image portion of a digital video image is provided.

Abstract: Embodiments of the invention provide a circuit for generating a trapezoidal signal with controlled wavefronts, particularly for a converter for a satellite receiver, comprising a first oscillator suitable to generate a square-wave signal and a second oscillator which is cascade-connected to the first oscillator, wherein the second oscillator is synchronized with the first oscillator and is suitable to generate a voltage signal which is amplitude-modulated with a trapezoidal modulating signal.

Abstract: A structure of electronic devices integrated in a semiconductor substrate with a first type of conductivity comprising at least a first HV transistor and at least a second LV transistor, each having a corresponding gate region. Said first HV transistor has lightly doped drain and source regions with a second type of conductivity, and said second LV transistor has respective drain and source regions with the second type of conductivity, each including a lightly doped portion adjacent to the respective gate region and a second portion which is more heavily doped and comprises a silicide layer.

Abstract: A neural network including a number of synaptic weighting elements, and a neuron stage; each of the synaptic weighting elements having a respective synaptic input connection supplied with a respective input signal; and the neuron stage having inputs connected to the synaptic weighting elements, and being connected to an output of the neural network supplying a digital output signal. The accumulated weighted inputs are represented as conductances, and a conductance-mode neuron is used to apply nonlinearity and produce an output. The synaptic weighting elements are formed by memory cells programmable to different threshold voltage levels, so that each presents a respective programmable conductance; and the neuron stage provides for measuring conductance on the basis of the current through the memory cells, and for generating a binary output signal on the basis of the total conductance of the synaptic elements.

Abstract: A process forms a structure incorporating at least one circuitry transistor and at least one non-volatile memory cell of the EEPROM type with two self-aligned polysilicon levels having a storage transistor and an associated selection transistor in a substrate of semiconductor material including field oxide regions bounding active area regions. The process comprises the steps of, in the active area regions, forming a gate oxide layer and defining a tunnel oxide region included in the gate oxide layer; depositing and partly defining a first polysilicon layer; forming an interpoly dielectric layer and removing the interpoly dielectric layer at least at the circuitry transistor; depositing a second polysilicon layer; selectively etching away, through a first mask, at least the second polysilicon layer at the cell, and the first and second polysilicon layers at the circuitry transistor; and selectively etching away, through a second mask, the interpoly dielectric layer and the first polysilicon layer at the cell.

Abstract: Presented is a low-drop type of voltage regulator formed with BiCMOS/CMOS technology. The regulator includes an input terminal that receives a stable voltage reference connected to one input of an operational amplifier through a switch controlled by a power-on enable signal. A supply voltage reference powers the operational amplifier. The regulator includes an output transistor connected to an output of the amplifier to generate a regulated voltage value to be fed back to the amplifier input. A second transistor is connected in series between the output transistor and the supply voltage reference. The regulator uses a control circuit portion connected between the control terminal of the second transistor and the supply voltage reference to prevent the breakdown of the output transistor from occurring.

Abstract: A waveform track-and-hold circuit receives an analog input signal and generates an analog output signal. The waveform track-and-hold circuit includes a differential separating input stage, a differential separating output stage, first and second charge storage means, and switch means. The first and second charge storage means are coupled between the differential separating input stage and the differential separating output stage, and the switch means are controlled by a logic control signal so as to selectively isolate the first and second charge storage means from the analog input signal. Additionally, the differential separating input stage includes a push-pull input stage connected to the switch means and receiving the analog input signal. In a preferred embodiment, the analog input signal is supplied to the emitters of transistors that form the push-pull input stage, the collectors of the transistors are connected to the switch means, and the transistors are part of current mirror circuits.

Abstract: A process-independent thermal protection circuit for microelectronic circuits is disclosed, including a thermal ramp generator suitable to generate a first thermal ramp signal and a second thermal ramp signal, a differentiator suitable to determine the difference between the first and second thermal ramp signals in order to generate a difference voltage signal, and a comparator suitable to compare the difference voltage signal with a reference voltage signal in order to assert a thermal protection signal when the difference voltage signal drops below the reference voltage signal.

Abstract: An ESD protection network protects a CMOS circuit structure integrated in a semiconductor substrate. The circuit structure includes discrete circuit blocks formed in respective substrate portions which are electrically isolated from one another and independently powered from at least one primary voltage supply having a respective primary ground, and from at least one secondary voltage supply having a respective secondary ground. This network includes a first ESD protection element for an input stage of the circuit structure; a second ESD protection element for an output stage of the circuit structure, the first and second protection elements having an input/output pad of the integrated circuit structure in common; a first ESD protection element between the primary supply and the primary ground; and a second ESD protection element between the secondary supply and the secondary ground.

Abstract: An integrated power operational amplifier can alternatively be operated in a master or a slave mode, such that a master amplifier can be connected in parallel with one or more slave amplifiers. This arrangement allows very low impedance loads to be driven, as well as allowing the heat dissipation to be distributed over a number of operational amplifiers, thereby raising the maximum dissipation limits of integrated power systems. In addition by eliminating the ballast resistors, more power can be delivered by the system, for the same supply voltage, and less power is dissipated.

Abstract: A protective structure having a plurality of protection regions extending along closed lines arranged inside each other. Each intermediate protective region is tangent to two different adjacent protective regions, at different areas, so as to form a connection in series with the adjacent protective regions. The protective structure can be of resistive material, such as to form a series of resistors, or it can include doped portions alternately of P- and N-type, such as to form a plurality of anti-series arranged diodes. The structure can be made of polycrystalline silicon extending on the substrate surface, or can be integrated (implanted or diffused) inside the substrate.

Abstract: A fabrication process and an integrated MOS device having multi-crystal silicon resisters are described. The process includes depositing a multi-crystal silicon layer on top of a single-crystal silicon body; forming silicon oxide regions on top of the multi-crystal silicon layer in zones where resistors are to be produced; depositing a metal silicide layer on top of and in contact with the multi-crystal silicon layer so as to form a double conductive layer; and shaping the conductive layer to form gate regions, of MOS transistors. During etching of the double conductive layer, the metal silicide layer on top of the silicon oxide regions is removed and the silicon oxide regions form masking regions for the multi-crystal silicon underneath, so as to form resistive regions having a greater resistivity than the gate regions.

Abstract: A circuit assembly for an operational amplifier has an input stage with first and second input terminals and an output terminal. An output stage has a first input terminal coupled to the output terminal of the input stage, a second input terminal, and an output terminal. A feedback circuit is coupled between the output terminal of the output stage and the second input terminal of the input stage. An interconnection circuit is coupled to the first and second input terminals and the output terminal of the output stage and to a reference voltage source. The interconnection circuit has first, second, and third modes, such that the second input terminal of the output stage is coupled to the reference voltage source when the interconnection circuit is in the first mode.

Abstract: The cell is formed of a selection transistor, a detection transistor and a tunnel condenser. The detection Transistor has its own control gate formed with an n+ diffusion which is closed and isolated from those of the other cells of the same memory.