Abstract: A delay-locked loop circuit (DLL) includes a delay line with a delay which can be varied in a controlled manner to delay a periodic input signal having a period T, and a control circuit for controlling the delay line to lock the delay to the period T. The delay line supplies to the control circuit a plurality of periodic signals each delayed relative to the periodic input signal by a respective fraction of the delay. The control circuit includes a sequence-detector circuit which can periodically detect in the delayed signals characteristic sequences of digital values indicative of the delay. The control circuit can bring about a reduction or an increase in the delay for locking to the period T based upon the detected types of characteristic sequences.

Abstract: The present invention provides a system, method and an apparatus for a digital video processor comprising an error memory and a merge memory, a half pixel filter communicably coupled to the merge memory, a controller communicably coupled to the error memory, the merge memory and the half pixel filter. The present invention also including a sum unit communicably coupled to the error memory. The controller executing one or more instructions to provide motion compensation during video decoding.

Abstract: Relaying on a temporal correlation among successive pictures and using a hierarchical recursive motion estimation algorithm, the hardware complexity of video coders complying with the MPEG-2 standard can be significantly reduced without an appreciable loss of quality of the video images being transferred. Relaying on a temporal correlation among successive pictures is also performed on a spatial correlation of motion vectors of macroblocks of the currently processed picture.

Abstract: A memory device having an associative memory for the storage of data belonging to a plurality of classes. The associative memory has a plurality of memory locations aligned along rows and columns for the storage of data along the rows. Each memory row has a plurality of groups of memory locations, each storing a respective datum, wherein groups of memory locations adjacent along one and the same row store data belonging to different classes. Groups of memory locations adjacent in the direction of the columns and disposed on different rows store data belonging to one and the same class. Each class has data having a different maximum lengths. The device is particularly suitable for the storage of words belonging to a dictionary for automatic recognition of words in a written text.

Abstract: A configurable electronic circuit having configuration nodes is provided. Each of the configuration nodes is coupled to corresponding first circuitry that is non-modifiable during configuration and second circuitry that is modifiable during the configuration. The non-modifiable first circuitry selectively imposes one of at least a first potential and a second potential on the configuration node prior to configuration, and the modifiable second circuitry allows modification of the potential imposed on the configuration node by the non-modifiable first circuitry. In a preferred embodiment, the modifiable second circuitry includes at least one fuse that is in an intact state before configuration and that can be changed to a destroyed state after configuration. This enables a reduction in the number of fuses that have to be destroyed during the configuration of the circuit. Also provided is an information processing system that includes at least one configurable electronic circuit having configuration nodes.

Abstract: A digital clock generator circuit with built-in frequency and duty cycle control may include a pulse generator for generating a start pulse. The pulse generator may be connected to a ring oscillator to generate multiple signals having a specified frequency and programmable duty cycles. The oscillator may further be connected to a multiplexer which selectively connects one output of the ring oscillator to a final output to produce a signal of the specified frequency and specified duty cycle. The duty cycle may be adjustable over a wide range and across the full frequency band of operation.

Abstract: A solid state image sensor includes an array of pixels and a corresponding array of microlenses. The positions of the microlenses relative to their corresponding pixels may vary according to the distances of the pixels from a central optical axis of the image sensor to substantially eliminate vignetting of light collected by the microlenses.

Abstract: A random signal generator uses a folded MOS transistor, whose drain-source current includes a random component, as an electronic noise source. The random signal generator generates a random binary signal from the random component. The invention may be applied, in particular, to smart cards.

Abstract: The present invention relates to a method of vapor phase epitaxial deposition of silicon on a silicon substrate including areas containing dopants at high concentration among which is arsenic, while avoiding an autodoping of the epitaxial layer by arsenic, including the steps of performing a first thin epitaxial deposition, then an anneal; the conditions and the duration of the first epitaxial deposition and of the anneal being such that the arsenic diffusion length is much lower than the thickness of the layer formed in the first deposition; and performing a second epitaxial deposition for a chosen duration to obtain a desired total thickness.

Abstract: The present invention concerns a bootstrap circuit in DC/DC static converters comprising first current generator means controlled to close in function of a first signal and a recharge circuit of a capacitor. The bootstrap circuit has the characteristic of comprising second current generator means controlled to close with a second signal synchronous with the first signal, the second signal has times and modalities such to send to the capacitor recharge currents such to compensate the discharge of the capacitor itself.

Abstract: A method for fabricating an integrated circuit. According to the method, a second dielectric layer is formed above a first dielectric layer, and holes and/or trenches are etched in the first and second dielectric layers. The holes and/or trenches are filled with metal in order to form electrical connection elements, and at least a third dielectric layer is formed. Holes and/or trenches are selectively etched in the third dielectric layer and the second dielectric layer with respect to the first dielectric layer and the elements, in order to control the depth of the etch. Additionally, there is provided an integrated circuit of the type having metallization levels separated by dielectric layers and metallized vias connecting lines of different metallization levels. The integrated circuit includes first and second metallization levels, first and second superposed dielectric layers located above the first metallization level, and a third dielectric layer located above the first and second dielectric layers.

Abstract: The device can be used for generating, in the framework of a CDMA communications terminal, both Walsh-Hadamard channeling codes and OVSF channeling codes. The device comprises a code generator preferably configured for generating Walsh-Hadamard codes. When the device is used for generating Walsh-Hadamard codes, the corresponding index values, applied to an input of the device, are sent to the input of the code generator. Generation of OVSF codes envisages, instead, that the corresponding indices, sent to an input of the device, undergo mapping, which enables generation, starting from the OVSF code, of the corresponding index identifying a string of symbols that is identical within the Walsh-Hadamard code. In this way each string of OVSF code symbols is generated, so producing, by means of the code generator, the generation of the identical string of symbols included in the Walsh-Hadamard code.

Abstract: A circuit architecture and a method for performing a trimming operation directly on an application board, or after the operation of packaging integrated electronic devices. The circuit architecture includes at least one non-volatile memory unit (3) having non-volatile memory elements (5) and a circuit (17,19) for modifying the state of the memory elements (5), a first multifunctional input pin (8) whereon a sequence (25) of trimming data is received, a second multifunctional input pin (9) whereon a timing signal of the trimming operations is received, and an additional access pin (7) for switching the circuit architecture operation from a normal mode over to a trimming mode.

Abstract: A high voltage switching device includes a switching circuit for switching a high voltage to an output line and for providing a control signal. The high voltage switching device also includes a switching transistor connected to the switching circuit for switching a low voltage to the output line based upon the control signal. The output signal is controlled by a control circuit that sets up a control loop between the drop in the gate voltage level of the switching transistor and the voltage level of the output line that is controlled by the switching circuit.

Abstract: A method and apparatus are disclosed for controlling the operation of a multiphase motor, and particular to spinning the motor from an inactive state to an operable state. The method and apparatus include initially sensing an electrical characteristic of one or more phase windings, such as performing an inductive sense operation. Having sensed values of the electrical characteristic, a determination is made as to whether or not the motor's rotor is spinning. Upon a determination that the rotor is not spinning, a spin-up operation is performed to bring the spin of the rotor to operable spin speeds. On the other hand, upon a determination that the rotor is spinning, a resynchronization operation is performed to synchronize the application of drive signals for the phase windings of the motor to the dynamic position of the rotor.

Abstract: The disclosure relates to detectors of the level of supply voltage in an integrated circuit. The disclosed detector is designed to detect the crossing of low levels of supply voltage. It comprises a first arm to define a first reference voltage and a second arm to define a second reference voltage, these two reference voltages varying differently as a function of the supply voltage and their curves of variation intersecting for a value of the supply voltage located close to a desired threshold. A comparator receives the two reference voltages. The first arm has a resistive divider bridge, an intermediate connector of which constitutes the first reference voltage. The second arm comprises a resistor series-connected with a native P type MOS transistor, the point of junction of this resistor and this transistor constituting the second reference voltage. A non-linear element may be parallel-connected to the resistor which constitutes the first reference voltage.

Abstract: A circuit for the speed recovery of a direct current motor comprises an output stage, that includes a first couple of transistors and a second couple of transistors, and first means, for detecting a current circulating in said motor. The circuit has the characteristic of comprising second means, suitable for activating said second couple of transistors of said output stage for a determined first time period so as to short-circuit said motor, and at the end of said first time period said second means being suitable for unbalancing said output stage so as to force the maximum current circulating for a determined second time period in function of the value detected by said first means during said first time period so as to stop said motor.

Abstract: A method of making an integrated circuit that is resistant to an unauthorized duplication through reverse engineering includes forming a plurality of false contacts and/or false interconnection vias in the integrated circuit. These false contacts and/or false interconnection vias are connected as true contacts and true interconnection vias by lines patterned in a metallization layer deposited over an insulating dielectric layer or multilayer through which the true contacts and/or the true interconnection vias are formed. False contacts and false vias extend in the respective dielectric layers or multilayers to a depth insufficient to reach the active areas of a semiconductor substrate for false contacts, or to a depth insufficient to reach a layer of conductive material below the dielectric layers or multilayers for interconnection vias.

Abstract: A method for adjusting a duration of an internal timing signal in an integrated circuit with a value close to a typical value of the duration may include activating the internal timing signal in the integrated circuit and sequentially sending calibration values to an input of the integrated circuit. The expiration of the internal timing signal may determine the last calibration value received or being received, and the calibration data may be applied to a device for adjusting the duration of the internal timing signal.

Abstract: A process for the manufacturing of an integrated circuit including a low operating voltage, high-performance logic circuitry and an embedded memory device having a high operating voltage higher than the low operating voltage of the logic circuitry, providing for: on first portions of a semiconductor substrate, forming a first gate oxide layer for first transistors operating at the high operating voltage; on second portions of the semiconductor substrate, forming a second gate oxide layer for memory cells of the memory device; on the first and second gate oxide layers, forming from a first polysilicon layer gate electrodes for the first transistors, and floating-gate electrodes for the memory cells; forming over the floating-gate electrodes of the memory cells a dielectric layer; on third portions of the semiconductor substrate, forming a third gate oxide layer for second transistors operating at the low operating voltage; on the dielectric layer and on the third portions of the semiconductor substrate, formin