Abstract: A circuit for the measurement of time intervals includes a generator providing primary periodic pulses, a frequency divider capable of transmitting secondary periodic pulses for scaling down the frequency of the primary periodic pulses, and a counter for counting the secondary periodic pulses transmitted during the measured time interval. The frequency divider is programmable by a digital factor which determines the frequency division. The circuit further includes a self-calibration circuit for modifying the digital factor as a function of the number of pulses counted by the counter during a previous time interval measurement.

Abstract: The load pump booster device with transfer and recovery of the charge including a charge pump circuit with an output terminal connected to a load capacitor by means of a load node. In turn, the charge pump circuit includes a plurality of transfer transistors connected to one another in series, and define a plurality of transfer nodes. Each transfer node is connected to a storage capacitor. The booster device also includes a plurality of controlled switches interposed between the load node and a respective transfer node, in order to connect to the load node a single one of the transfer nodes. By this means, between the load capacitor and the storage capacitors there takes place a phase of transfer of charge followed by a phase of recovery of charge, from the storage capacitors to the load capacitor. FIG. 1.

Abstract: A semiconductor memory architecture having two memory banks each containing respective memory locations, and for each memory bank, respective circuits for selecting the locations of the bank and respective circuits for reading the data contained in the selected locations of the bank, a structure for the transfer of the data read by the reading circuits associated with the memory banks to data output terminals of the memory, there being a single data-transfer structure assigned selectively to one memory bank at a time and which includes storage for storing the most recent datum read by the reading circuits, and output driver circuits activated selectively in order to transfer the contents of the registers to the data output terminals of the memory, an addressing structure having, for each memory bank, and a respective circuit for the sequential scanning of the memory locations of the bank, operatively connected to the respective circuits for selecting the locations of the memory bank.

Abstract: A timing and control structure for a memory, including the timing and control structure includes a first circuit that can recognize, on the basis of control signals supplied to the memory from the exterior, whether a random-access reading is to be executed, the control signals including a first control signal indicative of the presence of an address supplied to the memory from the exterior, and a second control signal that, upon switching edges of a first type, supplies to the control and timing structure a time base for the execution of the random-access readings and, upon switching edges of a second type, supplies a time base for the execution of the sequential readings, a second circuit controlled by the first circuit and upon a random-access reading, generates a first synchronism signal in response to a transition of the first type in the second control signal, a third circuit sensitive to transitions of the second type in the second control signal and which can generate a second synchronism signal upon t

Abstract: An analog-to-digital converter (500) for sampling high speed video signals includes a first input (502) for receiving an electronic signal, a sampling clock input (547) for receiving a sampling clock signal, and first and second sampling circuits. The first sampling circuit is arranged in a differential circuit arrangement, and is electrically connected to the first input (502) and to the sampling clock input (547) and is responsive to the sampling clock signal, for sampling the electronic signal to provide a pair of boundary reference voltage signals (706, 708, 710, 712) that bound the voltage of the sampled electronic signal, and further to convert the sampled electronic signal to provide the most significant bits (554) of a digital representation of the electronic signal at times indicated by the sampling clock signal.

Abstract: A method of operating a solid state image sensor having an image sensing array that includes a plurality of active pixels comprises resetting each pixel, and after successive time periods reading outputs from each pixel to obtain multiple sets of image data having different dynamic ranges without resetting the pixels between the successive time periods. The sets of image data are combined to obtain a resultant set of image data having a further dynamic range different from the individual dynamic ranges of the multiple data sets. Images are obtained having low noise, a wide dynamic range, and are resistant to lighting-induced flicker.

Abstract: An interconnect system includes an arbitration unit for arbitration among a plurality of sources or initiators requesting access to resources or targets. The arbitration unit selectively grants the initiators access to the targets as a function of respective priorities. The system includes a programmable control unit for programmably choosing the priorities in question out of group of at least two different priority schemes including a positional fixed priority, programmed fixed priority, and a variable priority based on a respective threshold latency values associated to the initiators.

Abstract: A field-effect transistor and a method for its fabrication are described. The transistor includes a monocrystalline channel region extending from a monocrystalline body region of a semiconductor substrate. First and second source/drain regions laterally adjoin opposite sides of the channel region and are electrically isolated from the body region by an underlying first dielectric layer. The source/drain regions include both polycrystalline and monocrystalline semiconductor regions. A conductive gate electrode is formed over a second dielectric layer overlying the channel region. The transistor is formed by selectively oxidizing portions of a monocrystalline semiconductor substrate and then removing portions of the oxidized substrate. The resulting structure includes a body region of the substrate having overlying first and second oxide regions, with a protruding channel region extending from the body region between the oxide regions.

Abstract: A memory device comprises a plurality of independent memory sectors, external address signal inputs for receiving external address signals that address individual memory locations of the memory device, the external address signals including external memory sector address signals allowing for individually addressing each memory sector, and a memory sector selection circuit for selecting one of the plurality of memory sectors according to a value of the external memory sector address signals. A first and a second alternative internal memory sector address signal paths are provided for supplying the external memory sector address signals to the memory sector selection circuit, the first path providing no logic inversion and the second path providing logic inversion.

Abstract: A method of manufacturing an integrated semiconductor device having at least one non-volatile floating gate memory cell and at least one logic transistor. The method includes growing a first gate oxide layer over a silicon substrate, depositing a first polysilicon layer over the first gate oxide layer, selectively etching and removing the first polysilicon layer in order to define the floating gate of the memory cell, introducing dopant in order to obtain source and drain regions of the memory cell, depositing a dielectric layer, selectively etching and removing the dielectric layer and the first polysilicon layer in a region wherein the logic transistor will be formed, depositing a second polysilicon layer, selectively etching and removing the second polysilicon layer in order to define the gate of the logic transistor and the control gate of the memory cell.

Abstract: A converter receiving an A.C. voltage between an input terminal and a reference terminal and providing two D.C. voltages of opposite polarities across a first and a second capacitor. The converter includes a first switch connected the input terminal and a node of the circuit; a third capacitor, connected in parallel with the first capacitor, between the node and the reference terminal; circuitry including a second switch for connecting, in series, the second capacitor and the third capacitor when the second switch is closed; and a control circuit for closing the first switch only at the beginning and at the end of halfwaves of given polarity, the first switch being open when the second switch is closed.

Abstract: Process for producing electrical connections on the surface of a semiconductor package containing an integrated-circuit chip and having metal electrical-connection regions on the surface of the package, consisting of: covering these connection regions with a first metal layer forming an anti-diffusion barrier; covering this first layer with an anti-oxidation second metal layer; and depositing a metal solder drop or solder ball on the second metal layer. The solder drop comprises an addition of metal particles in suspension which contain at least one of the metals of the first metal layer so as to produce a precipitate comprising these additional metal particles and at least partly the metal of the second metal layer, the precipitate remaining in suspension in the solder drop.

Abstract: A reading circuit having an array branch connected to a multi-level array memory cell; a reference branch connected to a reference memory cell; a current/voltage converter stage formed of a current mirror having a variable mirror ratio, connected to the array and reference branches, and supplying at an array node and at a reference node respectively an array potential and a reference potential, which are correlated respectively to the currents flowing in the array branch and in the reference branch; and a comparator stage having a first and a second input connected to the array and reference nodes for comparing with one another the array and reference potentials.

Abstract: A varactor has a gate region, first and second biasing regions of N+ type embedded in a well, and first and second extraction regions of P+ type, forming a pair of PN junctions with the well. The PN junctions are inversely biased and extract charge accumulating in the well, below the gate region, when the gate region is biased to a lower voltage than a predetermined threshold value.

Abstract: The device and method monitor the current delivered to a load through a power transistor including a sense transistor. The circuit includes a disturbances attenuating circuit that has a differential stage, and first, second and third stages referenced to ground, the respective input nodes of which are connected in common to an output node of the differential stage. The third stage is formed by a transistor identical to a transistor of the first stage and delivers a current signal through a current terminal thereof, proportional to the current being delivered to the load.

Abstract: A method for digital-to-analog conversion of a digital input code into a first output analog signal and a second output analog signal to be supplied to a first terminal and a second terminal, respectively, of an audio load, the conversion being performed by means of a DAC with N-level balanced output, the conversion method includes using N/2 positive generator elements supplying respective positive elementary contributions which are nominally equal to one another, and N/2 negative generator elements supplying respective negative elementary contributions which are nominally equal to one another and, in absolute value, equal to the positive elementary contributions; attributing the same progressive addresses to the positive generator elements and to the negative generator elements; defining a first index for the positive input codes and a second index for the negative input codes; and, in the presence of an input code at the input of the DAC, selecting between the first index and the second index, the index cor

Abstract: An electronic component, such as an IGBT, that presents a control terminal for receiving a stepwise control signal and at least one other terminal adapted for reaching a given voltage level by effect of the application of the step signal, with the possibility of overshoot occurring; and a damping resistive element interposed between the control terminal and the at least one other terminal. The damping resistive element shows a current saturated behavior correlated to voltage increase applied at the terminals towards the given voltage level, thus eliminating the risk of occurrence of overshoot in the voltage of the IGBT collector, and preventing the undesired re-ignition of the IGBT when it is in a cut-off condition, by inducing an overvoltage on the collector terminal. FIG. 5 is the one selected.

Abstract: A structure for a semiconductor resistive element, applicable in particular to power components, having a high concentration substrate of the n type, a first epitaxial layer of the n type, a region of the p type arranged on said first epitaxial layer so to form the resistive element proper, a second epitaxial layer of n type grown on said first epitaxial layer to make the region of the p type a buried region, and an additional layer of the n type with a higher concentration with respect to the second epitaxial level, positioned on the embedded region. Low resistivity regions of the p type adapted to make low resistivity deep contacts for the resistor are provided. The buried region can be made either with a development that is substantially uniform in its main direction of extension or so to present, at on part of its length, a structure of adjacent subregions in marginal continuity.

Abstract: A read only memory (ROM) device includes a semiconductor substrate having a first type of conductivity, and a plurality of memory cells on the semiconductor substrate. Each memory cell includes first and second regions of a second conductivity type opposite the first conductivity type. A first dielectric layer is on the plurality of memory cells, and a plurality of first contacts extend through the first dielectric layer for contacting the first regions. A second dielectric layer is on the first dielectric layer and the plurality of first contacts. A plurality of second contacts extend through the second dielectric layer and overlie the corresponding second regions.

Abstract: A method is provided for locally creating an aperture in a metal layer that is formed above a base wafer having at least one lateral mark provided in its peripheral edge and at least one surface mark provided at a point on its surface. Coordinates of a starting position of a tool with respect to the peripheral edge and the lateral mark are found, and coordinates of the position of the surface mark with respect to the starting position of the tool are calculated so as to determine a course to be followed by the tool from the starting position to a working position above the surface mark. The tool is moved to the working position and activated so as to etch the metal layer and create the aperture in the metal layer above the surface mark. Also provided is a device for locally creating an aperture in a metal layer that is formed above a base wafer.