Abstract: A programmable logic array (PLA) includes at least one AND plane including an array of transistors arranged in rows and columns. The transistors belonging to a same column may be connected in series with each other. Two end conduction terminals of the series connected transistors may be coupled to a supply voltage rail and to a reference, respectively. The transistors of the first and last rows of the array may have their control terminals coupled to respective opposite enabling/disabling potentials. Except for the first and last rows, first, second, and third control lines are associated with each row of the array. Except for the first and last rows, each transistor of each row may have its control terminal connected to one of the three control lines associated with its row. The PLA may alternatively include at least one OR plane.

Abstract: The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

Abstract: A chip of semiconductor material is fixed to a supporting area of a film of insulating material. Electrical interconnecting elements join metallized areas of the chip to the ends of metal strips which form the terminals of the device. To obtain devices with numerous terminals without approaching the dimensional limits imposed by the manufacture of the terminal frames, the interconnecting elements include electrically conductive tracks formed on the film of insulating material. The electrical connection between the ends of the terminals and the tracks is made by strips of anisotropic conductive material.

Abstract: A computer system includes an address and data path interconnecting an on-chip CPU with a module and an external communication port, event request packets being generated by the CPU and the module and memory access packets being generated by the CPU, each packet having a destination address and being distributed in parallel format on-chip with a reduction to a more serial format for off-chip communication.

Abstract: A method for manufacturing electronic devices, such as memory cells and LV transistors, with salicided junctions, that includes: depositing an upper layer of polycrystalline silicon; defining the upper layer, obtaining floating gate regions on first areas, LV gate regions on second areas of a substrate, and undefined regions on the first and third areas of the substrate; forming first cell source regions laterally to the floating gate regions; forming LV source and drain regions laterally to the LV gate regions; forming a silicide layer on the LV source and drain regions, on the LV gate regions, and on the undefined portions; defining HV gate regions on the third areas, and selection gate regions on the first areas; forming source regions laterally to the selection gate regions, and source and drain regions laterally to the HV gate regions.

Abstract: An improved method for fabricating interconnect signal lines in integrated circuits utilizes variations from standard process conditions to relieve stress during formation of metal signal lines. This prevents AlCu stress migration and TiN ARC cracking caused by subsequent high temperature processing. A relatively planar interconnect layer, being one which does not extend through an insulating layer to make contact with an underlying conductor, includes an initial wetting layer of Ti formed over a Ti/TiN layer remaining from earlier processing steps. An AlCu layer is deposited over the Ti at a high temperature with a low deposition rate. Finally, a TiN ARC layer is formed in the usual manner. However, decreased nitrogen flow during deposition lowers the nitrogen content of the ARC layer and prevents later cracking. Deposition conditions for the AlCu layer prevent the formation of voids during subsequent high temperature processing steps.

Abstract: The method is based on the use of an etching mask comprising silicon carbide or titanium nitride for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region of silicon oxide on a substrate of semiconductor material; growing a pseudo-epitaxial layer; forming electronic circuit components; depositing a masking layer comprising silicon carbide or titanium nitride; defining photolithographically the masking layer so as to form an etching mask containing the topography of a microstructure to be formed; with the etching mask, forming trenches in the pseudo-epitaxial layer as far as the sacrificial region so as to laterally define the microstructure; and removing the sacrificial region through the trenches.

Abstract: The invention relates to a control circuit for a hysteretic switching voltage regulator, which comprises a logic circuit driving an output stage; a hysteresis comparator comparing the voltage value at the output of the regulator with a reference voltage; a current sensor for sensing, through a comparator, the current drain of a load connected to the output of the regulator. This control circuit further comprises a device for adjusting the hysteresis range of the hysteresis comparator, and a hysteresis frequency sensing and controlling logic portion connected to the output of the hysteresis comparator, the logic portion acting on the frequency adjusting device.

Abstract: A self-powered peripheral apparatus is connected upstream to another apparatus via a universal serial bus (USB), wherein one of the conductors of the USB provides a supply voltage to the self-powered peripheral apparatus. One of the two data conductors of the USB is connected to a voltage source of the self-powered peripheral apparatus. The self-powered peripheral apparatus includes a control device for controlling the data conductor supply for supplying the latter only if the supply voltage is present on the supply conductor. The control device includes a circuit for detecting the supply voltage and a logic circuit for controlling the regulator.

Abstract: A semiconductor memory device having at least one memory cell row, each memory cell having an information storing element and a related select transistor for selecting the storing element. The select transistor includes a gate oxide region over a silicon substrate, a lower polysilicon layer and an upper polysilicon layer superimposed to the gate oxide region and electrically insulated by an intermediate dielectric layer interposed therebetween. The gate oxide regions of the select transistors of the at least one row are separated by field oxide regions, and the lower and upper polysilicon layers and the intermediate dielectric layer extend along the row over the gate oxide regions of the select transistors and over the field oxide regions. Along the row there is at least one opening in the upper polysilicon layer, intermediate dielectric layer and lower polysilicon layer, inside of which a first contact element suitable to electrically connect the lower and upper polysilicon layers is inserted.

Abstract: A method for communicating between a transmitting unit and a receiving unit. A message formed by elementary messages is transmitted from the transmitting unit to the receiving unit, and at least one reception bit is transmitted from the receiving unit to the transmitting unit. The reception bit (or bits) allows the transmitting unit to determine the elementary message that is to be transmitted next. In a preferred method, at least two reception bits are transmitted from the receiving unit and the values of the reception bits indicate the elementary message that is to be transmitted next by the transmitting unit. The present invention also provides a receiving device for receiving messages from a transmitting device. The receiving device includes an interface for receiving a transmitted message from the transmitting device and for analyzing a received elementary message to determine if it was properly received, and a transmitter for transmitting at least one reception bit to the transmitting device.

Abstract: A method of voltage driving a load using a controlled current includes providing a negative feedback of an output current, measuring the output current on a collector of an output transistor of an output stage, comparing the measured output current with an input current to define a current difference, and providing the current difference at a base of the output transistor to provide the voltage driving.

Abstract: A process for forming a vertical double-diffused metal oxide semiconductor (VDMOS) structure comprising a semiconductor substrate, an epitaxial layer on the substrate, and a dielectric gate layer on the epitaxial layer includes implanting a first concentration dopant of a first conductivity type through an aperture defined by edges of a patterned gate conductor layer on the dielectric gate layer so that the first concentration dopant diffuses to form a body region of the VDMOS structure. A mask is formed on the patterned gate conductor layer and on a first portion of the body region for defining apertures exposing second portions of the body region.

Abstract: A device for protecting a structure of SOI type including several insulated cells, each cell being formed of a portion of a semiconductor substrate of a first conductivity type having its bottom and its lateral walls delimited by an insulating area. A protective cell includes a first semiconductor region of the second conductivity type connected to a reference potential and several second regions of the second conductivity type separated from one another and from the first region. The substrate portion of each of the cells other than the protective cell is connected to one of the second regions.

Abstract: In a reading device for a memory, a circuit for the asymmetrical precharging of the differential amplifier is provided so that an output of the reading device switches over to a determined state. In the following evaluation phase, if the memory cell is programmed, the output remains unchanged. If the memory cell is blank or erased, the output of the reading device switches over to another state. A detection circuit detects a sufficient difference between the inputs of the differential amplifier for stopping the asymmetrical precharging and for making the reading device go automatically to the evaluation phase.

Abstract: A plurality N of capacitance sensing cells are arranged in a row/column array top to cooperate with a fingertip and produce an output signal that controls the movement of a cursor/pointer across a display screen. The output of each individual sensing cell is connected to the corresponding individual node of a resistor array that has N nodes arranged in a similar row/column array. A centroid output of the resistor nodes in row configuration provides an output signal for control of cursor movement in a row direction. A centroid output of the resistor nodes in column configuration provides an output signal for control of cursor movement in an orthogonal column direction. A mass signal output of the row/column resistor mode array provides a switch on/off signal.

Abstract: A programming method comprises the steps of applying a ramp voltage having a first slope to the gate terminal of a selected memory cell to rapidly bring the threshold voltage of the selected cell to an intermediate value; then applying a ramp voltage having a second slope lower than the first, to end programming to the desired final threshold value with high precision. Thereby, when a high threshold value is to be programmed, programming time is reduced; on the other hand, if a low threshold value is to be programmed, the slower ramp voltage is applied right from the start, to prevent possible overprogramming of the cell.

Abstract: The generator includes complementary MOS transistors interconnected in four circuit branches one of which contains a constant-current generator. Voltages picked up at various nodes of the circuit can be used as reference and/or biasing voltages of the integrated circuit, which account for the variability of the manufacturing parameters.

Abstract: A system and method regulates an alternator and includes a circuit for digitally generating a sawtooth waveform. An error amplifier circuit generates a divided down and error amplified alternator system voltage. A comparator circuit receives and compares to each other the digitally generated sawtooth waveform and the error amplified alternator system voltage and has an output to produce an alternator field input signal used for driving the field of an alternator.

Abstract: An improved leadframe for packages of integrated power devices which, by virtue of its configuration, allows to press the dissipator on the bottom of the shell during the molding of the plastic case, without the dissipator having exposed portions of its inner face (which is in contact with the chip). In order to achieve this, the leadframe according to the invention comprises a monolithic body which defines a perimetric frame, the leads and the dissipator. The dissipator extends in a depressed plane with respect to the frame and is connected to the frame and to the leads in at least three step-like points which are mutually spaced and non-aligned. During the molding of the plastic case, a pressure is exerted on the frame and is transmitted to the dissipator by the three step-like points, so that the dissipator is effectively pressed flat against the bottom of the mold without using pushers which pass through the plastic case.