Abstract: The method is for controlling a voice coil motor which drives a mechanical arm via a control circuit which sets the output nodes, to which the motor is connected, in a high impedance state for a certain time interval. The method and circuit detect the back electromotive force induced on the motor winding during the time interval, and deliver current pulses for driving the motor. The circuit compares the detected back electromotive force with a certain target value and regulates the amplitude of the driving current pulses as a function of the difference between the detected value of the back electromotive force and a voltage signal representing the desired speed of the arm, according to a pre-established function. A preferred embodiment includes such a function being a pre-established saturated linear characteristic with an offset value.

Abstract: A process for adjusting a level of spurious signal spectral lines in an output frequency spectrum provided by a single-sideband frequency mixer includes the step of generating two mutually phase-shifted test signals defined by a plurality of parameters, and applying the two test signals to respective first and second inputs of the single-sideband frequency mixer. The level of each of the spurious signal spectral lines are measured for different test values corresponding to the plurality of parameters of the two test signals. Reference values are determined for the plurality of parameters for minimizing the level of the spurious signal spectral lines. The reference values are determined by a numerical calculation performed on a predetermined number of different test values of the plurality of parameters, and corresponding measured values of the levels with respect to two parabolic relations linking the levels of the two spurious signal spectral lines with the plurality of parameters.

Abstract: Method of manufacturing a capacitor integrated onto a silicon substrate, comprising a step of depositing a layer of first electrode, a step of depositing a layer of a dielectric material, a step of exposure of the dielectric layer to a plasma and a step of depositing a layer of second electrode. This creates the advantage of a design of capacitors with metallic electrodes having a good linearity versus voltage.

Abstract: A microprocessor circuit having an external memory interface includes a transmission element for the transmission of binary data packets between the microprocessor and the interface. The interface includes a buffer with a determined capacity for storing the transmitted data elements. The circuit also includes a controller capable of computing the capacity of the buffer that is available or unavailable owing to the storage of the data elements and capable of reporting the status of availability of the buffer to receive an additional packet. A method is also provided for the control of the interface of such a circuit. The interface comprises a decoder for decoding format data of a packet. The format data of a packet being contained in the data packet and each format data decoding operation being given to the controller in order to optimize the use of the storage capacity of the buffer and the transmission between the microprocessor and the external memory.

Abstract: Presented is a memory architecture including at least first, second and third voltage booster circuits adapted to generate, on respective first, second and third circuit nodes, at least first, second and third boosted voltage references. These boosted references are in turn connected to first, second and third adjusters, which are adapted to provide respective first, second and third voltage references as required for the operations of programming, erasing and verifying cells of the memory architecture. At least a first switch block is used that connects between the first and third circuit nodes and is controlled by a first control signal to place the first and third high-voltage references in parallel during cell verify operations, thereby to provide one equivalent high-voltage source having a higher capacity for current than individual sources and effectively speed up the charging of the first circuit node so as to shorten the settling time of the first voltage reference.

Abstract: An interconnect level includes upper and lower partial levels having respective conductive lines offset heightwise from each other. The interconnect level further includes respective dielectric portions separating adjacent conductive lines and extends above and below the conductive lines. At least one descending via connects a conductive line of the upper partial level with a lower element located below the dielectric portions of the interconnect level. The at least one descending via extends through the dielectric portions separating adjacent conductive lines of the lower partial level. At least one ascending via connects a conductive line of the lower partial level with an upper element located above the dielectric portions of the interconnect level. At least one ascending via extends through the dielectric portions separating adjacent conductive lines of the upper partial level.

Abstract: A process for assembling a microactuator on a R/W transducer that includes forming a first wafer of semiconductor material having a plurality of microactuators including suspended regions and fixed regions separated from each other by first trenches; forming a second wafer of semiconductor material comprising blocking regions connecting mobile and fixed intermediate regions separated from each other by second trenches; bonding the two wafers so as to form a composite wafer wherein the suspended regions of the first wafer are connected to the mobile intermediate regions of the second wafer, and the fixed regions of the first wafer are connected to the fixed intermediate regions of the second wafer; cutting the composite wafer into a plurality of units; fixing the mobile intermediate region of each unit to a respective R/W transducer; and removing the blocking regions. The blocking regions are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.

Abstract: A new memory controller for use in a display, such as a liquid crystal display of the type comprising a set of first drivers, a set of second drivers, a portion of which can be converted to the first drivers, and a RAM memory structured to accept data at an input and output the data to the sets of first and second drivers when a master clock signal is received at the RAM memory. The memory controller includes a clock signal generator structured to generate the master clock signal; and a control signal generator circuit structured to generate control signals for the RAM memory and the sets of first and second drivers.

Abstract: A device includes a capacitive structure including an input node and n output nodes, r integrated capacitors connected in series between two adjacent nodes, an integrated capacitor connected between the input node and ground, an integrated capacitor connected between the nth output node and ground, and r capacitive branches connected in parallel between ground and each node of the capacitive structure including the first output node and the (n−1)th output node. Each branch may include r+1 series-connected integrated capacitors. Furthermore, the integrated capacitors of the capacitive structure are theoretically identical. The device may also include a charge source for charging each node of the capacitive structure. Additionally, a measurement circuit may measure the charge at each of the nodes of the structure, and a comparison circuit may compare each measured nodal charge value with a theoretical nodal charge value while taking into account a predetermined nodal tolerance.

Abstract: The generator includes complementary MOS transistors interconnected in four circuit branches one of which contains a constant-current generator. Voltages picked up at various nodes of the circuit can be used as reference and/or biasing voltages of the integrated circuit, which account for the variability of the manufacturing parameters.

Abstract: An integrated cellular network structure that is programmable to solve partial derivative differential equations in order to control a phenomenon of diffusion or a propagation of electric drive pulses for robot actuators. Such structure includes analog and digital portions interconnected with each other; the analog portion having a matrix array of analog cells arranged to receive data from an I/O interface, and the digital portion having first and second memory arrays for storing a desired configuration and the initial state of such analog matrix array, respectively.

Abstract: An inductive structure integrated in a semiconductor substrate, comprising at least a conductive element insulated from the substrate, comprising an insulating structure, which is formed inside said semiconductor substrate and built close to said conductor element, so that the resistance of said substrate is increased and the parasitic currents induced by the conductor element in the substrate are decreased. The insulating structure including a plurality of insulating elements each surrounding a respective one of a plurality of semiconductor islands of the substrate.

Abstract: A reading circuit for semiconductor non-volatile memories connected to at least one selected cell and at least one reference cell, the circuit including current/voltage conversion circuits receiving at the input thereof a first current flowing through the selected cell and a second current flowing through the reference cell and providing respectively on a first circuit node a first selected cell voltage and on a second node a second reference cell voltage, as well as at least one differential amplifier, connected at the input of the first and the second nodes and having an output terminal effective to provide a logic signal correlated to the selected cell information.

Abstract: The invention relates to a plastic package for an integrated electronic semiconductor device to be encapsulated within a plastic body, the plastic bodyes formed using the step of molding said plastic body so as to fully enclose a semiconductor element, on which an integrated electronic circuit has been formed and which is placed onto a metal leadframe connected electrically to said integrated electronic circuit and carrying a plurality of terminal leads for external electric connection. To compensate the outward bends uncontrollably undergone by the plastic body due to thermal stresses during the molding step, a mold is used which has a cavity delimited by perimeter walls which define a concave-shaped volume. Preferably, at least one of the large walls, a bottom wall and a top wall, has a curvature inwardly of said mold. cavity. The curvature values are predetermined to compensate any outward curvature undergone by corresponding surfaces of said plastic body during the molding step.

Abstract: The invention relates to a ground-compatible inhibit circuit structure and method, for circuits integrated in a semiconductor substrate which is unrelated to ground potential. The circuit structure is integrated in the same substrate as an associated circuit to be inhibited, and the substrate is covered with an epitaxial layer accommodating the components of the inhibit circuit structure. It includes a stable internal voltage reference and a circuit portion for comparing this reference with an inhibit signal in order to block the associated circuit upon a predetermined threshold value being exceeded, even in a condition of the signal potential being higher than the supply potential to the circuit. Advantageously, the epitaxial layer of each well is always at a potential higher than or equal to that of the substrate.

Abstract: A processor is provided with a set of instructions formed in general, of an operation section and an operand section. For a special control instruction, the operand section is transmitted to the operation blocks along a bypass path separate from the normal path in which normal instructions are interpreted. In this way, an extension of the set of instructions can be achieved for tailoring the set of instructions to the user's own requirements. Consequently, the processor control unit should be capable of coupling its outputs to its inputs upon receiving one such instruction, thereby to transfer such internal operation control signals without interpretation.

Abstract: A computer system that includes a microprocessor, and at least one other device on a single integrated circuit chip that can be connected to an external computer device. The integrated circuit chip includes: an on-chip CPU having a plurality of registers, a communication bus for providing a parallel communication path between the CPU and a first memory local to the CPU, and an external communication port connected to the communication bus. The port [having] has an internal connection to the communication bus with an internal parallel signal format and an external connection to the external computer device with an external format less parallel than the internal parallel signal format.

Abstract: A field effect transistor having a variable doping profile is presented. The field effect transistor is integrated on a semiconductor substrate with a respective active area of the substrate including a source and drain region. A channel region is interposed between the source and drain regions and has a predefined nominal width. The effective width of the channel region is defined by a variable doping profile.

Abstract: A phase locked loop for a voltage controlled oscillator includes a phase comparator receiving at its inputs a reference frequency signal and a frequency signal from the oscillator, and supplies logic values to command a charge pump. A charge re-injection circuit receives one of the inputs of the comparator and supplies a logic value to command the charge pump. The loop further includes a detector with a threshold value for a current representative of the current supplied by the charge pump. A logic output from the detector is applied to the charge re-injection circuit so that the duration of the charge re-injection is limited.

Abstract: A method for reducing the transient response time of a voltage regulator when the load attached to it is entering or exiting a lower power consumption level by changing the bandwidth of the voltage regulator without compromising its stability, and a bandwidth regulator for implementing such a method are disclosed, wherein the bandwidth of the voltage regulator is changed based on a signal sent by a control device when it senses that the component is about to change power consumption levels.