Abstract: A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region. A split gate uses the active trenches as field plates or includes planar gates between the active trenches including a MOS gate electrode (MOS gate) and a diode gate electrode (diode gate). A body region of the second conductivity type in the drift region abutts the active trenches. A source of the first conductivity type in the body region includes a first source portion proximate to the MOS gate and a second source portion proximate to the diode gate. A vertical drift region uses the drift region below the body region to provide a drain. A connector shorts the diode gate to the second source portion to provide an integrated channel diode. The MOS gate is electrically isolated from the first source portion.

Abstract: DC to DC converters and PWM controllers are presented in which a slope compensation ramp signal is provided for current control operation via a frequency adaptive compensation circuit with a phase locked loop that provides a control output signal having an amplitude generally proportional to the frequency of a clock signal, and a slope generator circuit generating the slope compensation ramp signal with an amplitude generally proportional to the control output signal amplitude.

Abstract: A frequency reference device that includes a frequency reference generation unit to generate a frequency reference signal based on an absorption line of a gas.

Abstract: A system for measuring a capacitor (CSENj) precharges a CDAC (23) in a SAR converter (17) to a reference voltage (VAZ) and also precharges a first terminal (3-j) of the capacitor to another reference voltage (GND). During a measurement phase, the CDAC is coupled between an output and an input of an amplifier (31) and the capacitor also is coupled to the input of the amplifier, so as to redistribute charge between the capacitor and the CDAC. The amplifier generates an output voltage (VAMP) representing the capacitance being measured. The output voltage is stored in the CDAC. The SAR converter converts the output voltage to a digital value representing the capacitance being measured.

Abstract: A method for forming a stacked semiconductor package includes providing a bottom leadframe (LF) panel including LFs downset each including at least a plurality of terminals. Low side (LS) transistors are attached to the first die attach area. A first clip panel including first clips downset and interconnected are placed on the bottom LF panel. A dielectric interposer is attached on the first clips over the LS transistors. High side (HS) transistors are attached on the interposers. A second clip panel including a plurality of second clips is mated to interconnect to the HS transistors including mating together the second clip panel, first clip panel and bottom LF panel. The LFs can include a second die attach area, and a controller die attached on the second die attach area, and then pads of the controller die wirebonded to the plurality of terminals.

Abstract: A circuit for equalizing the impedances of a PMOS device with an NMOS device includes a first reference voltage coupled to the source of the first PMOS device. A second reference voltage is coupled to the source of the NMOS device. A first node has a common mode voltage between the first reference voltage and the second reference voltage. A second node is located between the PMOS device and the NMOS device. A first gate voltage is coupled to the gate of either the PMOS device or the NMOS device. An operational amplifier has a first input coupled to the first node and a second input coupled to the second node, the output of the operational amplifier is a second gate voltage that is coupled to the gate of one of either the PMOS device or the NMOS device that is not coupled to the first gate voltage.

Abstract: One embodiment includes a power supply system. The system includes a pulse-width modulation (PWM) system configured to generate a PWM signal. The system also includes a power stage comprising a gate driver, a high-side switch, and a low-side switch. The gate driver can be configured to alternately activate the high-side and low-side switches to provide an output signal to a load in response to the PWM signal, and to provide an activation dead-time between the alternate activation of the high-side and low-side switches. The system further includes a digital delay system configured to measure the activation dead-time and to add the measured activation dead-time to the activation of the high-side switch.

Abstract: Test circuits located on semiconductor die enable a tester to test a plurality of die/ICs in parallel by inputting both stimulus and response patterns to the plurality of die/ICs. The response patterns from the tester are input to the test circuits along with the output response of the die/IC to be compared. Also disclosed is the use of a response signal encoding scheme whereby the tester transmits response test commands to the test circuits, using a single signal per test circuit, to perform: (1) a compare die/IC output against an expected logic high, (2) a compare die/IC output against an expected logic low, and (3) a mask compare operation. The use of the signal encoding scheme allows functional testing of die and ICs since all response test commands (i.e. 1-3 above) required at each die/IC output can be transmitted to each die/IC output using only a single tester signal connection per die/IC output. In addition to functional testing, scan testing of die and ICs is also possible.

Abstract: An address and command port interface selectively enables JTAG TAP domain operations and Trace domain operations within an IC. The port carries TMS and TDI input and TDO output on a single pin and receives a clock signal on a separate pin. The addressable two pin interface loads and updates instructions and data to the TAP domain within the IC. The instruction or data update operations in multiple ICs occur simultaneously. A process transmits data from an addressed target device to a controller using data frames, each data frame comprising a header bit and data bits. The logic level of the header bit is used to start, continue, and stop the data transmission to the controller. A data and clock signal interface between a controller and multiple target devices provides for each target device to be individually addressed and commanded to perform a JTAG or Trace operation.

Abstract: Low noise switchable varactors and digital controlled oscillator (DCO) circuitry are presented for creating alternating signals at controlled frequencies, including a first transistor for selectively coupling two capacitors between varactor output nodes when a control signal is in a first state, second and third transistors for selectively coupling first and second internal nodes between the respective capacitors and the first transistor with a third internal node when the control signal is in the first state, and an inverter disconnected from the first and second internal nodes to mitigate phase noise and operable to control the voltage of the third internal node according to the control signal.

Abstract: Described examples include circuitry and methods to control lock time of a phase lock loop (PLL) or other locking circuit, in which a phase frequency detector (PFD) circuit is switched from a first mode to provide a control input signal to a charge pump as a pulse signal having a pulse width corresponding to a phase difference between a reference clock signal and a feedback clock signal to a second mode to hold the control input signal at a constant value for a predetermined time in response to detected cycle slip conditions to enhance loop filter current during frequency transitions to reduce lock time for the locking circuit.

Abstract: Optical time domain reflectometer (OTDR) systems, methods and integrated circuits are presented for locating defects in an optical cable or other optical cable, in which a first optical signal is transmitted to the cable and reflections are sampled over a first time range at a first sample rate to identify one or more suspected defect locations, and a second optical signal is transmitted and corresponding reflections are sampled over a second smaller time range at a higher second sample rate to identify at least one defect location of the optical cable for relaxed memory requirements in the OTDR system.

Abstract: Disclosed examples include drawing apparatus and methods of rendering lines on a display screen, in which a first angle is determined that corresponds to a hand drawn line created by a user on the display screen, and a new line is rendered on the display screen to represent the hand drawn line created by the user. The new line is selectively rendered parallel or perpendicular to an existing line on the display screen at least partially according to the first angle using the processor.

Abstract: An LED backlight controller combines global/hybrid and local brightness/dimming control for an LED backlight illuminator with local regions illuminated by associated LED strings. Global/hybrid brightness/dimming control performs hybrid digital modulation control for a predefined lower range of brightness levels, with string current maintained at a substantially constant level associated with a predefined maximum brightness for the lower range (controlling brightness by adjusting digital modulation, such as PWM duty cycle, up to a maximum), and performs hybrid string current control for a predefined higher range of brightness levels (controlling brightness by adjusting string current). Local dimming control is performed by introducing a local digital modulation signal into a hybrid digital modulation control path for the associated string, so that digital modulation for the associated string is a combination of local digital modulation and global/hybrid digital modulation.

Abstract: The disclosure describes a novel method and apparatus for providing expected data, mask data, and control signals to scan test architectures within a device using the falling edge of a test/scan clock. The signals are provided on device leads that are also used to provide signals to scan test architectures using the rising edge of the test/scan clock. According to the disclosure, device test leads serve to input different test signals on the rising and falling edge of the test/scan clock which reduces the number of interconnects between a tester and the device under test.

Abstract: A circuit for reducing gate leakage current in a switchable power domain of a CMOS (complementary metal oxide semiconductor) integrated circuit chip includes a first transistor having a drain electrode coupled to a first terminal of a power switch having a second terminal coupled to a first reference voltage, the first transistor having a gate electrode, a body electrode, and a source electrode. The source electrode and body electrodes are coupled to a second reference voltage. The first transistor has a relatively high first gate leakage current that flows from its gate electrode to its body electrode if the power switch is open and a voltage of the gate electrode of the first transistor representing a first logic level exceeds a voltage of the body electrode by more than a first predetermined amount.

Abstract: A method of operating a transmitter (FIGS. 3A and 5A) is disclosed. The method includes receiving a sequence of data bits (DATA), wherein each data bit has a respective sequence number. A first data bit of the sequence is spread (508) with a first spreading code (504) determined by the sequence number (502) of the first data bit. A second data bit of the sequence is spread (508) with an inverse of the first spreading code (506) determined by the sequence number (502) of the second data bit. The first and second data bits are modulated (510) and transmitted (516) to a remote receiver.

Abstract: A built-in self-test (BIST) circuit to test one or more memory blocks on an integrated circuit. The one or more memory blocks further includes a first memory block and a second memory block A built-in soft-repair controller (BISoR) is provided to soft repair the one or more memory blocks. The BIST circuit in conjunction with the BISoR is configured to test and soft repair the first memory block before performing test and soft repair of the second memory block.

Abstract: A voltage converter (FIG. 4) for a power supply circuit is disclosed. The voltage converter comprises a control circuit (400) coupled to receive an enable (EN) signal. The control circuit produces a first control signal (PWM) to provide a load current (IL) in response to the enable signal. A sample and hold circuit (408) is arranged to produce a third control signal (CSP) to emulate the load current and a fourth control signal (CSN?) to sample and hold value of the third control signal. A comparator circuit (416) is arranged to compare the third and fourth control signals and produce the enable signal in response to a result of the comparison.

Abstract: An integrated circuit capacitor. The capacitor includes a substrate, a first conductor, and a first insulating region between the first conductor and the substrate. The capacitor also includes a second conductor, a second insulating region between the first conductor and the second conductor, a third conductor, and a third insulating region between the first conductor and the third conductor. The capacitor also includes a fourth conductor and a fourth insulating region between the first conductor and the fourth conductor.