Abstract: A method for making an NMOS transistor on a semiconductor substrate includes reducing the thickness of the PMD layer to expose the polysilicon gate electrode of the NMOS transistor and the polysilicon gate electrode of the PMOS transistor, and then removing the gate electrode of the NMOS transistor. The method also includes depositing a NMOS-metal layer over the semiconductor substrate, depositing a fill-metal layer over the NMOS-metal layer, and then reducing the thickness of the NMOS metal layer and the fill metal layer to expose the gate electrodes of the NMOS transistor and the PMOS transistor.

Abstract: An integrated circuit (IC) includes a substrate having a device layer and a plurality of metal layers formed thereon. The plurality of metal layers include patterned upper metal layers and lower metal layers, a multi-level metal interconnect structure formed using the plurality of metal layers, where the interconnect structure is in electrical contact with a first portion and second portion of the device layer. At least one circuit editing structure including a first and second columns are formed using at least a portion of the plurality of metal layers, the first column being in electrical contact with the first portion of the device layer and the second column being in electrical contact with second portion of the device layer, where a portion of the first and second columns define a circuit editing feature operable to electrically couple or decouple the columns using focused ion beam (FIB) processing.

Abstract: Various systems, methods and apparatus for calibrating a clock generating circuit are discussed herein. As one example, a method for calibrating a voltage controlled oscillator is disclosed. The method includes fixing the control voltage of a fine tune capacitor in the voltage controlled oscillator at a predetermined level. A binary search is performed in a digital circuit for a value of a calibration word that is used to enable switched capacitors in a coarse tune capacitor bank in the voltage controlled oscillator. The calibration word is fixed at the value determined by the binary search, and the control voltage of the fine tune capacitor is released to enable adjustment of the control voltage by a feedback signal to the voltage controlled oscillator.

Abstract: One embodiment of the present invention includes a pipelined analog-to-digital converter (ADC) comprising a plurality of pipeline stages. At least one of the plurality of pipeline stages comprises a feedback transistor-follower combination interconnected between a positive source voltage and a summation node and configured to set a voltage of the summation node approximately equal to a sample-and-hold voltage associated with a preceding one of the plurality of pipeline stages. The at least one of the plurality of pipeline stages also comprises a current mirror coupled to the feedback transistor-follower combination configured to provide a first current that is approximately equal to a second current that is associated with the feedback transistor-follower combination. The at least one of the plurality of pipeline stages further comprises an output resistor configured to set an output voltage of the respective at least one of the plurality of pipeline stages based on the first current.

Abstract: The present invention provides, in one embodiment, a process for forming a dual work function metal gate semiconductor device (100). The process includes providing a semiconductor substrate (105) having a gate dielectric layer (110) thereon and a metal layer (205) on the gate dielectric layer. A work function of the metal layer is matched to a conduction band or a valence band of the semiconductor substrate. The process also includes forming a conductive barrier layer (210) on a portion (215) of the metal layer and a material layer (305) on the metal layer. The metal layer and the material layer are annealed to form a metal alloy layer (405) to thereby match a work function of the metal alloy layer to another of the conduction band or the valence band of the substrate. Other embodiments of the invention include a dual work function metal gate semiconductor device (900) and an integrated circuit (1000).

Abstract: Serial scanning circuitry is connectable to test access port controller for transferring serial data to and from functional circuitry. The test access port controller includes a first state machine having plural states controlling the transfer of serial data. Additional control circuitry includes a second state machine connected to the serial scanning circuitry and connected to the test access port controller. The additional control circuitry, when connected to the test access port controller, effects the providing and receiving of signals between the serial scanning circuitry and the functional circuitry and the transferring of serial data to and from the serial scanning circuitry continuously without interruption while the first state machine remains in one state.

Abstract: A transport stream with embedded projector configuration data 208 being carried along with the video for use in digital cinema projector setup. The embedded configuration data consists of sub-packets 304 of setup data information for such parameters as gamma tables, color management system information, relative luminance level, format and range of the sampled data, 3D/2D presentation information, frame rate, image size, aspect ratio, font tables, and language provision. This approach assures that the projector 404 is setup properly and also permits on-the-fly changes to the projector's parameters, which may be used for artistic effects in the movie.

Abstract: A semiconductor device comprising a gate structure on a semiconductor substrate and a recessed-region in the semiconductor substrate. The recessed-region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.

Abstract: Methods and apparatus for use with a micromirror element includes a micromirror a micromirror having a substantially flat outer surface disposed outwardly from a support structure that is operable to at least partially support the micromirror. The support structure includes at least one layer overlying at least two discrete planes that are both substantially parallel to the outer surface of the micromirror. In one particular embodiment, the support structure includes annular-shaped sidewalls that encapsulate a photoresist plug.

Abstract: Circuitry for increasing the maximum output current magnitude of a diamond buffer (Q57,58,74,75) having increased maximum output current provides a bias current of a first magnitude (I) into an emitter of a PNP first input transistor (Q57) and sinks a bias current of the first magnitude out of an emitter of an NPN second input transistor (Q55). The decrease is sensed in a collector current of the first input transistor caused by a demand for increased base current by a NPN first output transistor (Q74) of the diamond buffer. A collector current (Ic(65)) in an NPN another transistor (Q65) is increased in response to the decrease in the collector current of the first input transistor. The increased collector current in the first transistor is mirrored into a base of the first output transistor to boost its base current and maintain operation of the first input transistor when the amount of base current demanded by the first output transistor exceeds the first magnitude.

Abstract: A device test architecture and a reduced device test interface are provided to enable efficient testing of embedded cores and other circuits within devices. The reduced device test interface is achieved using a double data rate (DDR) signaling technique between the tester and the device. The DDR test interface allows the tester to interface to test circuits within the device, such as IEEE 1500 and/or IEEE 1149.1 test circuits, to provide high test data bandwidth to the test circuits using a minimum of test interface signals. The test architecture includes compare circuits that allow for comparison of test response data to be performed within the device. The test architecture further includes a memory for storing the results of the test response comparisons. The test architecture includes a programmable test controller to allow for various test control operations by simply inputting an instruction to the programmable test controller from the external tester.

Abstract: An integrated circuit includes a supply voltage controller operable to receive a plurality of control signals and at least one circuit supply voltage and to output at least one variable supply voltage to at least one supply terminal of the integrated circuit The controller is operable to switch the variable supply voltage to a first voltage level when the control signals define a first operation and to a second voltage level different from the first voltage level when the control signals define a second operation. The controller is also operable to float the variable supply voltage to a third voltage level different from the first voltage level when the control signals define a third operation.

Abstract: Embodiments of the present disclosure provide a feedback generator, a feedback decoder and methods of operating a feedback generator and decoder. In one embodiment, the feedback generator is for use in user equipment and includes a CQI profile module configured to provide a differential channel quality indicator, wherein the differential channel quality indicator represents a difference between indices corresponding to allocatable channel quality indicators. The feedback generator also includes a transmit module that transmits the differential channel quality indicator. In one embodiment, the feedback decoder is for use in a base station and includes a receive module configured to receive a differential channel quality indicator.

Abstract: An integrated circuit (IC) includes at least one memory array having a plurality of memory cells arranged in a plurality of rows and columns, the array also having a plurality of word lines for accessing rows of cells and a plurality bit lines for accessing columns of cells. A voltage differential generating circuit is operable to provide a differential wordline voltage (VWL) relative to an array supply voltage, wherein the differential is a function of the array supply voltage.

Abstract: An integrated circuit includes a memory array having a plurality of SRAM memory cells arranged in a plurality of rows and columns, the array also having a plurality of word lines for accessing rows of cells and a plurality bit lines for accessing columns of cells. The plurality of memory cells include a plurality of asymmetric cells, each of the asymmetric cells configured with a strong side including a first inverter having a strong side latch node, and a strong side pass transistor coupled to the strong side latch node, and a weak side including a second inverter cross-coupled with the first inverter having a weak side latch node and a weak side pass transistor coupled to the weak side latch node. Separate ones of the plurality of word lines are coupled to a gate of the strong side pass transistor and a gate of the weak side pass transistor.

Abstract: A method for making a transistor 20 that includes using a transition metal nitride layer 200 and/or a SOG layer 220 to protect the source/drain regions 60 from silicidation during the silicidation of the gate electrode 90. The SOG layer 210 is planarized to expose the transition metal nitride layer 200 or the gate electrode 93 before the gate silicidation process. If a transition metal nitride layer 200 is used, then it is removed from the top of the gate electrode 93 before the full silicidation of the gate electrode 90.

Abstract: A method is provided for driving a plurality of light emitters in a plurality of output paths with each output path including at least one light emitter. The method includes the steps of applying a supply voltage level to a plurality of output paths; generating a current for each path during a period of a predetermined length for the output path; sensing a current level for each output path during the period; comparing each sensed current level with a reference level; increasing the supply voltage level if the sensed current level is lower than the reference level; determining a lowest supply voltage level for the worst case output path; and using the lower supply voltage level as a common supply voltage level for all output paths.

Abstract: Various systems and methods for temperature measurement are disclosed. For example, some embodiments of the present invention provide methods for temperature measurement that include exciting a provided transistor with at least four sequential input signals of different magnitudes. In response, the transistor exhibits a sequence of output signals corresponding to the four sequential input signals. The sequence of output signals is sensed using a different gain for each of the output signals included in the sequence of output signals, and the output signals included in the sequence of output signals are combined such that the combined output signals eliminates a resistance error. The combined output signals are then used to calculate a temperature of the transistor.

Abstract: The invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among others, may include forming one or more layers of material within an opening in a substrate, the opening and the one or more layers forming at least a portion of an isolation structure, and subjecting at least one of the one or more layers to an energy beam treatment, the energy beam treatment configured to change a stress of the one or more layers subjected thereto, and thus change a stress in the substrate.

Abstract: A test architecture accesses IP core test wrappers within an IC using a Link Instruction Register (LIR). An IEEE P1500 standard is in development for providing test access to these individual cores via a test structure called a wrapper. The wrapper resides at the boundary of the core and provides a way to test the core and the interconnections between cores. The test architecture enables each of the plural wrappers in the IC, including wrappers in cores embedded within other cores, with separate enable signals.