Publication number: 20080242007
Abstract: The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) over a substrate (310), and then forming a layer of material (510) over the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445). This method further includes selectively etching portions of the layer of material (510) based upon a density or size of the semiconductor features (405, 410, 415, 420, 425, 430, 435, 440, 445) located thereunder, and then polishing remaining portions of the layer of material (510).
Type:
Application
Filed:
March 30, 2007
Publication date:
October 2, 2008
Applicant:
Texas Instruments Incorporated
Inventors:
Kyle Hunt, Neel Bhatt, Asadd M. Hosein, Brian L. Vialpando, William R. Morrison