Abstract: An electronic system (2001) for manipulating an input data argument (D[31:0]) comprising an integer number of bits. The system comprises an input (R) for receiving a right direction argument and an input (L) for receiving a left direction argument. The system also comprises circuitry (200) for producing a first data output having the integer number of bits by rotating the input data argument in response to the first direction argument and the second direction argument. The system also comprises circuitry for providing a modified data output (502). The circuitry for providing comprises circuitry for selecting a first set of bits from the first data output as a first portion of the modified data output and circuitry for providing a second set of bits from a source other than the first data output as a second portion of the modified data output.

Abstract: A system interface having an interface for dual battery packs provides for power up sequencing of battery packs and pack switching under the control of a host processor within associated system electronics. The host processor communicates with each battery pack via a pack interface that includes a single wire mode control signal and a single wire status signal. The mode control signal allows the host processor to control the operational mode of selector switches within the respective battery pack. The single wire status signal provides status information to the host processor regarding the state of the selector switches within the respective battery pack. The mode and status signals are multi-state signals that permit at least three states to be identified via the single wire interface. Selector switches are provided only in the battery packs. No selector switches are included in the system electronics to minimize voltage drops between the selected battery pack and the system electronics.

Abstract: The present invention facilitates semiconductor fabrication by providing methods of fabrication that employ high-k dielectric layers. An n-type well region (304) is formed within a semiconductor body (302). A threshold voltage adjustment implant is performed by implanting a p-type dopant into the n-type well region to form a counter doped region (307). A high-k dielectric layer (308) is formed over the device (300). A polysilicon layer (310) is formed on the high-k dielectric layer and doped n-type. The high-k dielectric layer (308) and the polysilicon layer (310) are patterned to form polysilicon gate structures. P-type source/drain regions (306) are formed within the n-type well region (304).

Abstract: A phase locked loop circuit comprises a voltage controlled oscillator with a control input to which a variable control voltage is applied and a phase-frequency discriminator with an output connected to a loop filter to produce the control voltage. To provide the phase locked loop circuit with a low loop gain and a wide frequency pulling range, a plurality of discrete capacitors is associated with the voltage controlled oscillator. A switch array selectively activates and deactivates each of the capacitors in the voltage controlled oscillator. Each number of currently activated capacitors determines one out of a plurality of partial ranges of frequencies through which the oscillator can be tuned by a variation of the control voltage in a range between predetermined upper and lower control voltage limits. A total frequency range through which the oscillator can be tuned is divided thus into a plurality of partial frequency ranges each defined by a different number of activated capacitors.

Abstract: Systems and methods are disclosed to enable determining thermal protection characteristics of an integrated circuit. In one embodiment, an integrated circuit includes a proportional to absolute temperature (PTAT) generator that provides a PTAT signal that varies as a function of temperature. Thermal protection control system provides an output signal indicative of a thermal protection condition based at least in part on the PTAT signal. A monitoring system that provides a path to enable selective measuring of at least one signal associated with operation of the thermal protection control system.

Abstract: A sample rate converter suitable for use in an audio DAC includes a first estimating circuit (32A) generating first (TR) and second (STAMPR) signals synchronized to an asynchronous clock (MCLK) and representing the period and edge arrival times, respectively, of a reference clock (REFCLK). A second estimating circuit (32B) operates on the first and second signals to generate third (T1) and fourth (STAMP1) signals representing an input sample rate (32fsin) and arrival times of input data samples, respectively, which are applied to a coefficient and address generator (76) to generate read addresses and coefficients input to a FIFO memory (42) receiving digital input data at the input sample rate and a multiplication/accumulation circuit (78) receiving data from the FIFO memory. The multiplication/accumulation circuit produces an output signal (SRC-out) synchronized to the asynchronous clock at an output sample rate (32fsout).

Abstract: Systems and methods for automatic gain control are disclosed. In one aspect of the invention, a system is provided that comprises a programmable gain amplifier that amplifies an input signal based on a gain signal. The system further comprises an analog-to-digital converter that generates at least one digital output signal from the amplified input signal, and an automatic gain control component that determines an adjustment of the gain signal based on a comparison of the at least one digital output signal to a predetermined maximum amplitude reference level.

Abstract: A system and are described as to adjusting voltages in a memory device, while the device is in sleep mode, to prevent or minimize voltage or current leakage of the device.

Abstract: A method or device handles memory management faults in a device having a digital signal processor (“DSP”) and a microprocessor. The DSP includes a memory management unit (“DSP MMU”) to manage memory access by the DSP, and the DSP and the microprocessor access shared physical memory. Upon the DSP executing an instruction attempting to access a virtual address wherein the virtual address is invalid, a page fault interrupt is generated by the DSP MMU. A microprocessor interrupt handler in the microprocessor is activated in direct response to the page fault interrupt. Thereafter in the microprocessor, a translation lookaside buffer (“TLB”) entry is created in the DSP MMU, which includes a valid mapping between the virtual address and a page of physical memory. After creating the TLB entry, the microprocessor indicates to the DSP that the access by the DSP of the virtual address is completed.

Abstract: A new analog-to-digital (ADC) circuit and architecture and the corresponding method of implementation are provided. The analog input signal is converted into a modulated pulse stream such as by a pulse-width-modulation scheme. The time-duration width of the pulses are measured by a TDC (time-to-digital converter) and converted to a digital binary representation that is directly correlated with the voltage amplitude of the analog input signal. The circuit implementation is substantially free of switches and circuit issues such as associated with sigma-delta and switched-capacitor techniques for ADC's.

Abstract: A method and system are described for a two step precharging of bitlines in a memory array. In the first step a partial precharge of the bitline is accomplished with a lower power supply, the second step completes the bitline precharge with the higher power supply. Since the higher power supply must ultimately supply the final bitline precharge voltage achieving a partial bitline precharge with a lower power supply will result in lower sram and system power.

Abstract: An efficient method of generating a bit-reverse index array in real time without performing any bit manipulation for a wireless communication system.

Abstract: A novel method and apparatus for a negative contributive offset compensation mechanism for a transmit buffer adapted to compensate for the positive offset generated by higher order sigma-delta modulators used to amplitude modulate the transmit buffer. The positive outputs from the sigma-delta modulator are processed differently than the negative outputs. The inverters associated with the negative outputs in the sigma-delta modulator are removed and the clock signal used to drive the transistors corresponding to the negative outputs is negated or shifted 180 degrees from the clock used to drive the transistors corresponding to the positive outputs. A non-inverted version of the clock is used with the positive outputs and an inverse clock is used with the negative outputs. Use of the inverse clock causes a negative contributive offset to be generated that is added on the second half cycle of each clock. The result is an offset compensated RF output signal having zero offset.

Abstract: A semiconductor device with a chip having at least one metallic bond pad (101) over weak insulating material (102). In contact with this bond pad is a flattened metal ball (104) made of at least 99.999% pure metal such as gold, copper, or silver. The diameter (104a) of the flattened ball is less than or equal to the diameter (103a) of the bond pad. A wire (110) is connected to the bond pad so that the wire has a thickened portion (111) conductively attached to the flattened metal ball. The wire is preferably made of composed metal such as gold alloy. The composition of the flattened ball is softer than the wire. This softness of the flattened ball protects the underlying insulator against damage caused by pressure or stress, when the composed ball is attached.

Abstract: The invention provides a method for manufacturing a microelectronic device and a microelectronic device. The method for manufacturing the microelectronic device, without limitation, may include forming a first mirror layer over and within one or more openings in a sacrificial spacer layer, and forming a dielectric layer over an upper surface of the first mirror layer and within the one or more openings. The method may further include subjecting the dielectric layer to an etch, the etch removing the dielectric layer from the upper surface and leaving dielectric portions along sidewalls of the one or more openings, and forming a second mirror layer over the first mirror layer and within the one or more openings, the dielectric portions separating the first mirror layer and the second mirror layer along the sidewalls.

Abstract: A projection system, a spatial light modulator, and a method for forming a micromirror array such as for a projection display are disclosed. The spatial light modulator can have two substrates bonded together with one of the substrates comprising a micro-mirror array. The two substrates can be bonded at the wafer level after depositing a getter material and/or solid or liquid lubricant on one or both of the wafers if desired. In one embodiment of the invention, one of the substrates is a light transmissive substrate and a light absorbing layer is provided on the light transmissive substrate to selectively block light from passing through the substrate. The light absorbing layer can form a pattern, such as a frame around an array of micro-mirrors.

Abstract: The present invention is a digital dynamic compression or automatic gain control (AGC) (10) adapted for use in high quality audio and hearing aids applications. An efficient digital AGC design employs two compact ROM-based tables (ROM_CSD, ROM_SPL) in addition to two comparators (COMP_A, COMP_B) and several registers (REG_A, REG_B, ADDR_A, ADDR_B). While one ROM stores the values of discrete input signal levels, the other contains gain codes based on a canonical signed digit (CSD) coding approach that leads to a very simple gain multiplier (20). In many cases an extremely compact table for gain values can be achieved by reusing a single small-size ROM that behaves like one that is several time larger. Two design examples are shown to expound the insights of the new digital AGC design. For the less-than-half-dB-gain-step cases only two adders are required for the multiplier whereas just three adders are needed in the situations with less than quarter-dB gain steps.

Abstract: A display system includes a light source 110 and a spatial light modulator 122 located to receive light from the light source. The spatial light modulator (e.g., a DMD) includes a number of independently controllable elements that are activated for a period of time to display light of a desired brightness. A light sensor 136 is located to determine a characteristic of light from the light source 110. A control circuit 126 is coupled to the spatial light modulator 122 and controls the period of time that the independently controllable elements are activated. This period of time is based at least in part by an input received from the light sensor 136.

Abstract: A method of communicating data across a channel that experiences near-end cross talk (NEXT) interference and far-end cross talk (FEXT) interference in alternate intervals. In one embodiment, the method comprises: a) determining NF, the number of bits per symbol usable in a FEXT-only mode of operation; b) determining NS, a number of bits per symbol usable in a single mode of operation; c) determining whether the FEXT-only mode or the single mode provides a higher data rate; and d) configuring a modem to transmit using the mode having a higher data rate. The FEXT-only mode may be determined to have a higher data rate when 126NF>340NS.

Abstract: In a method and system for fabricating a thermally enhanced semiconductor device (200, 300) is packaged as a through hole single inline package (SIP). A leadframe (210, 310, 410) having a die pad (220, 320, 420) to attach an IC die (230, 330), a first plurality of conductive leads (240, 340, 430) formed from a first portion of metal sheet (432), and a second portion of metal sheet (440) disposed on an opposite side of the IC die (230, 330) as the first plurality of conductive leads is stamped from a metal sheet. The first plurality of conductive leads (240, 340, 430) are arranged in a single line and are capable of being through hole mounted in accordance with the SIP. The second portion of metal sheet (440) includes the die pad (420) to form a heat spreader (260, 360) in the form of the metal sheet. The heat spreader (260, 360) provides heat dissipating for the heat generated by the IC die (230, 330).