Abstract: A method for performing packet lookups is provided. Packets (which each have a body and a header) are received and parsed to parsing headers. A hash function is applied to each header, and each hashed header is compared with a plurality of binary rules stored within a primary table, where each binary rule is a binary version of at least one ternary rule from a first set of ternary rules. For each match failure with the plurality of rules, a secondary table is searched using the header associated with each match failure, where the secondary table includes a second set of ternary rules.

Abstract: A system and method for sharing a communications link between multiple protocols is described. A system includes a communications interface configured to exchange information with other systems using at least one of a plurality of protocols; a protocol select register that stores a value that selects a protocol from among the plurality of protocols to become an active protocol; and a state machine accessible to the communications interface, the state machine used to control the exchange of information through the communications interface according to the active protocol. The active protocol is used by the communications interface to exchange information while the remaining protocols of the plurality of protocols remain inactive. The state machine sequences through a series of states that cause the communications interface to operate according to the active protocol, and that are designated as inert sequences under the remaining protocols.

Abstract: An integrated circuit with SRAM cells containing dual passgate transistors and a read buffer, all connected to one word line is disclosed. The read buffer and one passgate transistor may be variously configured to a separate read data line and write data line, or a combined data line, in different embodiments. The read buffer in addressed SRAM cells may be biased during read operations. The read buffer in half-addressed SRAM cells may be biased or floated, depending on the configuration of the read data line and the write data line. The read buffer in addressed and half-addressed SRAM cells may be biased or floated, depending on the configuration of the read data line and the write data line.

Abstract: An integrated circuit structure includes a first conductive layer (MET4) including a first forked conductive structure (310), an insulating layer (320, ILD45) substantially disposed over the first forked conductive structure (310), a plurality of conductive vias (331-334) through the insulating layer (ILD45) and electrically connecting with the first forked conductive structure (310), and a second conductive layer (MET5) including a second forked conductive structure (340) substantially disposed over at least a portion of the insulating layer (ILD45) and generally perpendicular to the first forked conductive structure (310), the plurality of conductive vias (331-334) electrically connecting with the second forked conductive structure (340). Other structures, devices, and processes are also disclosed.

Abstract: Test circuits located on semiconductor die enable a tester to test a plurality of die/ICs in parallel by inputting both stimulus and response patterns to the plurality of die/ICs. The response patterns from the tester are input to the test circuits along with the output response of the die/IC to be compared. Also disclosed is the use of a response signal encoding scheme whereby the tester transmits response test commands to the test circuits, using a single signal per test circuit, to perform: (1) a compare die/IC output against an expected logic high, (2) a compare die/IC output against an expected logic low, and (3) a mask compare operation. The use of the signal encoding scheme allows functional testing of die and ICs since all response test commands (i.e. 1-3 above) required at each die/IC output can be transmitted to each die/IC output using only a single tester signal connection per die/IC output. In addition to functional testing, scan testing of die and ICs is also possible.

Abstract: An integrated circuit containing a gate controlled voltage divider having an upper resistor on field oxide in series with a transistor switch in series with a lower resistor. A resistor drift layer is disposed under the upper resistor, and the transistor switch includes a switch drift layer adjacent to the resistor drift layer, separated by a region which prevents breakdown between the drift layers. The switch drift layer provides an extended drain or collector for the transistor switch. A sense terminal of the voltage divider is coupled to a source or emitter node of the transistor and to the lower resistor. An input terminal is coupled to the upper resistor and the resistor drift layer. A process of forming the integrated circuit containing the gate controlled voltage divider.

Abstract: A semiconductor package having a die having a plurality of electrically continuous die wire bonding sites includes a first die wire bonding site and a second die wire bonding site. The package includes a substrate having a plurality of electrically continuous substrate wire bonding sites including a first substrate wire bonding site and a second substrate wire bonding site. A first bondwire is connected between the first die wire bonding site and the first substrate wire bonding site and a second bondwire is connected between the second die wire bonding site and the second substrate wire bonding site. The first and second bondwires lie in adjacent, substantially parallel bondwire planes. The second bondwire is substantially skewed with respect to said first bondwire.

Abstract: Methods and circuits for measuring the temperature of a transistor are disclosed. An embodiment of the method includes, providing a current into a circuit, wherein the circuit is connected to the transistor. A variable resistance is connected between the base and collector of the transistor. The circuit has a first mode and a second mode, wherein the current in the first mode flows into the base of the transistor and through the resistance and the current in the second mode flows into the emitter of the transistor. Voltages in both the first mode and the second mode are measured using different resistance settings. The temperature of the transistor is calculated based on the difference between the different voltages.

Abstract: A method of power line communications includes obtaining timing information for an AC mains signal transmitted on a power line in a power line communication (PLC) system that includes at least one receiver and at least one other device connected on the power line which provides variable loading during cycles of the AC mains signal. A first loading interval within at least a first cycle of the cycles having lower loading and at least a second loading interval within said first cycle having higher loading are identified using the timing information. At least one data packet is transmitted only during the first loading interval over the power line to the receiver.

Abstract: An integrated circuit contains a voltage protection structure having a diode isolated DENMOS transistor with a guard element proximate to the diode and the DENMOS transistor. The guard element includes an active area coupled to ground. The diode anode is connected to an I/O pad. The diode cathode is connected to the DENMOS drain. The DENMOS source is grounded. A process of forming the integrated circuit is also disclosed.

Abstract: This invention controls data transmission from a data source to a sink. The data source buffers the data. The data source signaling to transmit data upon storing a burst amount of data. The data source may include a plurality of data sources. A merge unit merges data by receiving and retransmitting data from each data source which signals to transmit and inserting a source identity block each time the merged data is received from a different source.

Abstract: A powered device receives electrical power through a data transmission cable from a power supplying device that monitors a load on the data transmission cable and turns off the power to the load if the load is outside of a range. The powered device draws a first current at least part of a time during which the powered device is in a low power mode. The powered device is operable during the low power mode to draw a second current. And the powered device increases and decreases the second current to maintain a sum of the first current and the second current, or a level of a current into the powered device, at least at a minimum level for at least a portion of a cycle time.

Abstract: An electronic device for DC-DC conversion including a feedback loop coupled at one side to the inductor for measuring a current through the inductor with a series of an auxiliary capacitor and an auxiliary resistor, a transconductance stage coupled to the auxiliary capacitor for generating a current proportional to a voltage drop across the auxiliary capacitor, wherein the electronic device further includes a ramp resistor coupled to the output of the transconductance stage for generating a ramp voltage across the ramp resistor and a comparator receiving at a first input the ramp voltage, wherein the output of the comparator is coupled to a gate driving stage for driving a power transistor coupled with a control gate to the gate driving stage and with a channel to a switching node of the electronic device.

Abstract: Systems and methods for regulating a switching converter are disclosed. One embodiment of the present invention relates to a power supply system that includes a switching converter that provides an output voltage by alternately turning on and off a high-side transistor and a low-side transistor both coupled to an output inductor through a switching node. The switching converter includes a drive circuit that regulates the output voltage based on a feedback signal. The power supply system also includes a simulated output generator that generates and provides the drive circuit with a simulated inductor waveform as the feedback signal based on a low-side output waveform of the low-side transistor measured at the switching node during off-times of the switching converter.

Abstract: An embedded resistor structure in an integrated circuit that can be formed in a replacement gate high-k metal gate metal-oxide-semiconductor (MOS) technology process flow. The structure is formed by etching a trench into the substrate, either by removing a shallow trench isolation structure or by silicon etch at the desired location. Deposition of the dummy gate polysilicon layer fills the trench with polysilicon; the resistor polysilicon portion is protected from dummy gate polysilicon removal by a hard mask layer. The resistor polysilicon can be doped during source/drain implant, and can have its contact locations silicide-clad without degrading the metal gate electrode.

Abstract: An embedded micro-electro-mechanical system (MEMS) (100) comprising a semiconductor chip (101) embedded in an insulating board (120), the chip having a cavity (102) including a radiation sensor MEMS (105), the opening (104) of the cavity at the chip surface covered by a plate (110) transmissive to the radiation (150) sensed by the MEMS. The plate surface remote from the cavity having a bare central area, to be exposed to the radiation sensed by the MEMS in the cavity, and a peripheral area covered by a metal film (111) touching the plate surface and a layer (112) of adhesive stacked on the metal film.

Abstract: Integrated circuits (ICs) utilize bipolar transistors in electro-static discharge (ESD) protection circuits to shunt discharge currents during ESD events to protect the components in the ICs. Bipolar transistors are subject to non-uniform current crowding across the emitter-base junction during ESD events, which results in less protection for the IC components and degradation of the bipolar transistor. This invention comprises multiple contact islands (126) on the emitter (116) of a bipolar transistor, which act to spread current uniformly across the emitter-base junction. Also included in this invention is segmentation of the emitter diffused region to further improve current uniformity and biasing of the transistor. This invention can be combined with drift region ballasting or back-end ballasting to optimize an ESD protection circuit.

Abstract: In an embodiment of the invention, a method of forming an NMOS (n-type metal-oxide semiconductor) transistor is disclosed. A dual mask pattern is used to ion-implant source/drain regions of the NMOS transistor. The first mask allows first doses of As (arsenic), P (phosphorous) and N (Nitrogen) to be ion-implanted. After these doses are ion-implanted, a high temperature (900-1050 C) spike anneal is performed to activate the formed source/drains. A second mask allows a second dose of phosphorus to be implanted in the source/drain regions. The second dose of the phosphorus is typically higher than the first dose of phosphorus. The second dose of phosphorus lowers the Rsd (resistance of the source and drain regions) and dopes n-type poly-silicon blocks.

Abstract: In a bi-directional embodiment, an authorization transponder 114 coupled to the mobile device 128 transmits an interrogating message, which includes a UID 116 associated with the mobile device, to a nearby wireless key 100. The wireless key compares this received UID 116 with the one or more UID's 102 stored on the wireless key, and if a match is detected, sends the wireless key's UID or encrypted variant thereof to the interrogating authorization transponder 114. On receiving the UID from the wireless key 100 and determining that it matches the authorization transponder UID 116, a command is sent from authorization transponder 114 to mobile device 128 enabling some or all operations of mobile device 128.

Abstract: A metal-oxide-semiconductor transistor (MOS) and method of fabricating the same, in which the effective channel length is increased relative to the width of the gate electrode. A dummy gate electrode overlying dummy gate dielectric material is formed at the surface of the structure, with self-aligned source/drain regions, and dielectric spacers on the sidewalls of the dummy gate structure. The dummy gate dielectric underlies the sidewall spacers. Following removal of the dummy gate electrode and the underlying dummy gate dielectric material, including from under the spacers, a silicon etch is performed to form a recess in the underlying substrate. This etch is self-limiting on the undercut sides, due to the crystal orientation, relative to the etch of the bottom of the recess. The gate dielectric and gate electrode material are then deposited into the remaining void, for example to form a high-k metal gate MOS transistor.