Abstract: An improved source/drain extension process is provided by processing steps (steps A and G) that cover the wafer and dry etching steps (steps D and I) that provide side wall spacers of poly oxide and/or cap oxide from the PMOS gate areas before doing PMOS implanting steps(K and M). The capping of the wafer (step G)with the cap oxide after the NMOS implant also prevents the arsenic from out diffusing from the silicon. Further embodiments include implanting directly on the base.

Abstract: An improved touch screen controller including a comparator and an analog-to-digital converter. The comparator of the touch screen controller detects a touch of the touch screen while the analog-to-digital converter is powered down. The Data Out (DOUT) line of the touch screen controller is used to signal the microprocessor that a touch has occurred. The unique structure of the improved touch screen controller and the fast switching edges of the comparator output signal provide for a faster touch screen controller that consumes little power without requiring a dedicated pin for the touch signal.

Abstract: A circuit for use in a phase lock loop including a first phase detector to detect a first phase error between input signals, the first phase detector obtaining the first phase error during a first time period, a second phase detector to detect a second phase error between the input signals, the second phase detector obtaining the second phase error during a second time period, the second time period being longer than the first time period, and a compensation circuit to compensate the first phase error with a portion of the second phase error signal.

Abstract: A method for integrating a thin film resistor into an interconnect process flow where one of the metal layers is used as a hardmask. After a via (42) etch and fill, the thin film resistor material (62) is deposited. The metal interconnect layer (76) is then deposited, including any barrier layers desired. The metal leads (70) are then etched together with the shape of the thin film resistor (60). The metal (76) over the thin film resistor (60) is then removed.

Abstract: An emulation controller (12) connected at a pin boundary of an integrated circuit (14) can be provided with concurrent access to concurrent debug signal activity of first and second data processing cores (core 2, core 1) embedded within the integrated circuit. A first signal path is provided from the first data processing core to a first pin (39) of the integrated circuit, for carrying a selected debug signal of the first data processing core to the first pin. A second signal path is provided from the second data processing core to the first pin of the integrated circuit for carrying a selected debug signal of the second data processing core to the first pin. A third signal path is provided from the second data processing core to a second pin (41) of the integrated circuit for carrying the selected debug signal of the second data processing core to the second pin.

Abstract: A digital processor (2, 102) for use in a digital controller (10) is disclosed. The digital processor (2, 102) includes a coefficient product memory (22) that stores previously calculated products of filter coefficients and each of a set of available input values. The memory (22) is addressed according to a received input value, and outputs a plurality of coefficient products associated with that input value. These coefficient products are combined across time samples (with one or more coefficient products delayed for use in later cycles), to produce an output value. The digital processor (2) can be used in combination with an analog-to-digital converter (4) and a pulse-width modulated circuit (6) to control a power supply. According to another embodiment of the invention, comparators (62H, 62L) and a counter (66) can be used instead of the analog-to-digital converter, for additional efficiency.

Abstract: A subscriber line interface circuit is provided that posses an output impedance that may be greater than about 2.2 Kohms at at least some frequencies associated ADSL communications. In at least some embodiments, such ADSL frequencies include frequencies greater than about 30 KHz. In some embodiments, the subscriber line interface circuit includes an output driver that provides voice signals on a telephone line on which digital data is also provided by a data driver and a filter coupled to the output driver wherein the output impedance of the subscriber line interface circuit is greater than about 2.2 Kohms at at least some frequencies greater than 30 KHz.

Abstract: According to one embodiment of the invention, a method for manufacturing a bipolar junction transistor includes implanting a first base dopant in a semiconductor substrate, forming an epitaxial layer outwardly from the semiconductor substrate, and forming a dielectric layer outwardly from the epitaxial layer. The method also includes etching a first portion of the dielectric layer to form an emitter region, forming an emitter polysilicon layer on the semiconductor substrate, and implanting an emitter dopant in the emitter polysilicon layer. The method further includes etching a portion of the emitter polysilicon layer and a second portion of the dielectric layer to form an emitter polysilicon region having sidewalls, forming nitride regions on the sidewalls, and implanting a second base dopant in the semiconductor substrate. After implanting the second base dopant, an annealing process is performed for the semiconductor substrate to form an emitter and a base.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: An embodiment of the invention is circuitry 25 that contains a programmable delay 8 and a pulse generator 16 that send clock signals of a certain frequency to a device under test 1. The programmable delay 8 increases the frequency of the clock signal to the device under test 1 until the device under test fails. The cycle time measurement of the device under test 1 is the period of maximum frequency at which the device under test 1 operates properly.

Abstract: The present invention includes a circuit and method for determining fly height based upon the PW50. A signal is used to provide a measure of PW50 by detecting the peak height and the area of the signal. The ratio of the peak height and area provides an indication of PW50 and correspondingly, the fly height.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: The present invention provides a system for reducing power consumption in a memory device containing a memory array having a number of memory cells. The present invention raises a supply voltage of a row of memory cells from a first voltage to a second voltage whenever the row of memory cells is selected for access (102) and lowers the supply voltage of the row of selected memory cells from the second voltage to the first voltage after the row of selected memory cells has been accessed (106). The first voltage is low enough to reduce power consumption of the memory device, but is high enough to retain data stored in the memory device. The second voltage is a nominal operating voltage sufficient to access the row of selected memory cells while maintaining the performance and stability of the row of selected memory cells.

Abstract: An impedance calibration circuit for a serial ATA (SATA) transmitter has a resistor in series with each leg of the differential output of the transmitter. An array of selectable resistors is in parallel with each of the series resistors. Resistors in the array are selected to be in parallel with the series resistors. A calibration circuit utilizes a comparator to determine when the minimum error in the impedance calibration is reached. Offset errors in the comparator are compensated for by a circuit which determines the center of alternate ones and zeros generated by the comparator when the input signals are within the offset of the comparator, which should be the point of minimum error in the calibration.

Abstract: A memory such as a FeRAM implements accelerated fatigue operations that simultaneously change the storage state of large numbers of memory cells and can be rapidly repeated. In one embodiment, the FeRAM includes multiple segments with plate lines in each segment being isolated from plate lines in other segments. A first fatigue operation uses standard read/write decoding for word lines but simultaneously activates all segments. A second fatigue operation activates all segments and all plate lines and exercises one row of memory cells in each plate line group. A third fatigue operation is similar to the second but cycles through rows in the plate line groups so that a number of repetitions of the third fatigue operation equally fatigue every FeRAM cell.

Abstract: Electronic devices of improved reliability having a substrate of electrically insulating material, further an integrated circuit chip with a periphery and a surface. Using a layer of polymeric material, the chip surface is mounted on the substrate surface. The polymeric material protrudes beyond the chip periphery and spreads some distance along the substrate surface. A metal layer is on the substrate surface, this layer is shaped as a band around the chip periphery; the band has an inner edge near the chip periphery, and an outer edge near the contour of the polymer protrusion. This metal band serves as a guard ring to stop any nascent crack propagating in the polymer protrusion.

Abstract: A thin film resistor (55) is formed over an etch stop layer 40. Contact pads (65) are formed n the thin film resistor (55) and a dielectric layer (80) is formed over the thin film resistor (55). Metal structures (120 are formed above the thin film resistor (55) and metal (110) is used to fill a trench and via formed in the dielectric layer (80).

Abstract: A variable gain amplifier includes an input stage that receives an input signal and converts the input signal into a corresponding intermediate signal. An output stage provides an output signal based on the intermediate signal and a gain control signal, with feedback signal being provided to the input stage as a function of the gain control signal, so that the intermediate signal varies as a function of the input signal and the feedback signal. The linearity performance of the VGA is substantially constant at the output over the useful input range of signal amplitudes.

Abstract: A semiconductor device comprising a semiconductor chip having an active and a passive surface; the active surface includes an integrated circuit and input/output pads suitable for metallurgical contacts. Further, the device has a protective plastic film (polyimide, epoxy resin, or silicone) of controlled and uniform thickness (20 to 60 &mgr;m) selectively attached to the passive surface. The film is suitable to absorb light of visible and ultraviolet wavelengths, to remain insensitive to moisture absorption, and to exert thermomechanical stress on the chip such that this stress at least partially neutralizes the stress exerted by an outside part after chip assembly.

Abstract: Integrated circuit structures comprising an embedded ferroelectric memory cell and methods of forming the same are described. These structures include a transistor level, a ferroelectric device level, a first metal level, an inter-level dielectric level and a second metal level. In a first embodiment, the ferroelectric device level is disposed over an isolation layer of the transistor level and an isolation layer of the ferroelectric level has one or more vias that are laterally sized larger than corresponding contact vias extending through the transistor isolation layer and aligned therewith. In a second embodiment, the first metal level and the ferroelectric device level are integrated into the same level. In a third embodiment, the ferroelectric device level is disposed over the first metal level. In a fourth embodiment, the ferroelectric device level is disposed over the inter-level dielectric level that, in turn, is disposed over the first metal level.