Abstract: A data processing device is used with peripheral devices having addressees and differing communication response periods. The data processing device includes a digital processor adapted for selecting different ones of the peripheral devices by asserting addresses of each selected peripheral device. Addressable programmable registers hold wait state values representative of distinct numbers of wait states corresponding to different address ranges. Circuitry responsive to an asserted address to the peripheral devices asserted by the digital processor generates the number of wait states represented by the value held in one of the addressable programmable registers corresponding to the one of the address ranges in which the asserted address occurs, thereby accommodating the differing communication response periods of the peripheral devices.

Abstract: In a PCI-interface device (20), the present invention autonomously outputs video data (440) from data packets (426) including a header portion (428) and a video data portion (430). The invention receives the data packets (440) in a data packet transfer device (20), and associates an address with a plurality of address fields (428, 418) within the data packets (426). Decoding of the header portion (428) and an address segment within the video data portion occurs to determine whether the header portion (428) comprises a vertical synch signal (407). Also, the address segment of the video data portion is decoded to determine whether the video data portion comprises a horizontal synch signal (409). The invention separates the header portion from the video data portion and then flows the video data portion (430) into a zoom port.

Abstract: A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.

Abstract: The present invention discloses a method to form CMOS transistors for high speed and lower power applications. A high energy and low dose phosphorous is implanted in a silicon substrate to fabricate an N-well after a pad oxide layer and a silicon nitride layer is formed. After a thick field oxide is formed by using a high temperature steam oxidation process, another high energy and low dose multiple boron implantation is then performed to fabricate a buried heavily boron doped region. A rapid thermal processing (RTP) system is following used to activate the boron dopant to form buried p+ layer and to recover the implanted damages. All the field oxide films are then removed by using a diluted HF or BOE solution. After porous silicon is obtained via anodic electrochemical dissolution in the HF solution, the porous silicon is then thermally oxidized to form the separate n-type silicon islands. Next, a thick CVD oxide film is deposited and then etched back to planarize device surface.

Abstract: A communication circuit is designed with a processing circuit (11) coupled to receive a plurality of first control signals (40-45) and a second control signal (46) from a source external to the communication circuit during a predetermined time (49). The plurality of first control signals are equally spaced apart in time. The second control signal is proximate one of the first control signals (40). The processing circuit produces a power control signal in response to at least two of the plurality of first control signals. A serial circuit is coupled to receive the power control signal. The serial circuit produces the plurality of third control signals and the power control signal.

Abstract: A fuse link 16 is formed of a portion of a top level of patterned metal conductor in a multilevel conductor integrated circuit 10. A deposited layer of oxide material 26 covers the fuse link. Radiant energy from such as a laser 36 is directed through the oxide material 26 to heat and open the fuse link 16. Layers of deposited protective oxide 28 and PIX 30 then cover the fuse link and layer of oxide material. One photoprocessing step is avoided by locating the fuse link 16 and bond pad 22, both made from the top layer of conductive material, at different levels. The blanket etch then exposes the bond pad 22 while leaving the fuse link 16 covered. The fuse link can be formed down in a step 38 or the bond pad 22 can be formed above such as a group of memory cells 80. The bond pad 22 and fuse link 16 also can be formed at the same level with other process procedures.

Abstract: A communication system (10) comprising circuitry (RCVR1) for receiving a bitstream packet (P). The bitstream packet comprises at least three groups of bits: (i) a plurality of preamble prefix bits having a predetermined bit pattern; (ii) a plurality of synchronization word bits following the plurality of preamble prefix bits; and (iii) a plurality of data bits following the plurality of synchronization word bits. The system further includes circuitry for completing a carrier and clock recovery operation in response to receiving a first portion of the plurality of preamble prefix bits. Still further, the system includes circuitry (30) for determining a location of the plurality of synchronization word bits within the bitstream packet. The circuitry for determining comprises circuitry (36) for performing a number of comparisons between a bit test pattern vector (32) and a sample vector (34) of bits from the bitstream packet.

Abstract: A method is disclosed for making gate oxides on a silicon wafer surface for multiple voltage applications comprising the steps of growing an oxide layer (12) on a wafer (10) surface, exposing the surface of the oxide layer (12) to a nitrogen ion containing plasma to form a nitrided layer (22). Next, a photoresist layer (14) is deposited over a portion of the oxide layer (12) and the isolation (30), followed by etching of the exposed nitrided layer 22 and a portion of the oxide layer (12) to create a thinner silicon dioxide layer (32). The photoresist layer (14) is removed, the wafer (10) is cleaned and then the thinner silicon dioxide layer (32) is removed prior to a final oxidation step to form a thinner silicon dioxide layer (34) having a different thickness than the silicon dioxide layer (12).

Abstract: A method of encapsulating a semiconductor device comprising the steps of providing a mold having top and bottom halves each with cavities for holding semiconductor devices, and further having gates and runners for feeding encapsulation material into said cavities; lining said cavities with protective plastic films; providing a plurality of semiconductor integrated circuit chips, each having an outline; providing an electrically insulating interposer; assembling said chip and said interposer, loading said assembly into said mold and introducing into said mold a low-viscosity, high adhesion encapsulation material; at least partially curing said encapsulation material, thereby forming a flat, high-luster surface; opening said mold and removing said interposer together with said encapsulated chips from said mold; attaching an array of solder balls to the exposed surface of said interposer; and singulating said encapsulated semiconductor devices, thereby forming devices having an outline substantially the same as

Abstract: A surface mounted power transistor is provided with a heat sink by positioning a mounting plate of a heat sink between the power transistor and a solder pad on the circuit board. The mounting plate of the heat sink is provided with a plurality of openings through which the solder of the solder pad flows during the solder reflow process so that the mounting plate is securely adhered between the power transistor and the circuit board. The mounting plate of the heat sink is connected thermally to an extension member which extends generally perpendicular to the mounting plate, the extension member in turn being connected to a heat dissipation surface which may be one or several fins.

Abstract: A circuit is designed with a delay circuit (300) coupled to receive a clock input signal (CLK) and a control signal (DFT). The control signal has a first logic state and a second logic state. The delay circuit produces a clock control signal (*CLK) at a first time in response to the first logic state and at a second time in response to the second logic state. A clock circuit (200) is coupled to receive the clock input signal and is enabled by the clock control signal. The clock circuit produces a first clock pulse signal having a predetermined width in response to a first transition of the clock input signal and produces a second clock pulse signal having the predetermined width in response to a second transition of the clock input signal.

Abstract: A method for compressing screened image data for printing. The data is generated by tiling an image with multi-pixel cells. The pixels within any one cell may or may not be rescanned to be better fit for compression. The method allows for selection between two compression paths, one which has no loss (24), the other which is lossy (26). Once the data is compressed, the information is stored in a buffer (16), then sent to the exposure module. If the lossy scheme is selected, a quantization factor (14) is used in compression that may be adjusted, depending upon feedback signals (18,20), to increase or decrease the compression.

Abstract: A microprocessor controlled color phase locked loop is provided which provides flexibility and adaptability for different television standards and sampling rates. Color burst phase error and color burst amplitude information are stored in data registers located at the output of the phase locked loop's low pass filter rather than at the output of the color demodulator.

Abstract: An enlarged contact area (62, 162) is formed for a gate structure (14, 114) by providing a substrate (12, 112) having at least one gate electrode (22, 122) thereon. An implant sidewall (42, 142) is formed outwardly from the gate electrode (22, 122) and defines an implant area (44, 144) in the substrate (12, 112). A terminal (50, 150) is formed for the gate electrode (22, 122) by implanting dopants (46, 146) into the implant area (44, 144) in the substrate (12, 112). The implant sidewall (42, 142) is removed and an insulative sidewall (60, 160) is formed outwardly from the gate electrode (22, 122). The insulative sidewall (60, 160) has a thickness less than that of the implant sidewall (42, 142) to define an enlarged contact area (62, 162) for the terminal (50, 150).

Abstract: A method for fabricating a gate device includes forming an elongated projection (422) on a substrate (412). The elongated projection (422) protrudes from a surrounding area (424) of the substrate (412) and includes an access channel (434) for the gate device. A first terminal (430) and a second terminal (432) are formed and coupled to the access channel (434) in the elongated projection. A gate structure (522) is formed and operable to control the access channel (434) to selectively couple the first terminal (430) to the second terminal (432).

Abstract: An electronic system, such as a video decoder (80), includes a clock generator circuit (22, 22′) based upon a phase-locked loop (PLL) (25). The PLL (25) includes a voltage controlled oscillator (VCO) (30) that produces a plurality of evenly-spaced output phases, each of a locked frequency relative to a reference clock (CREF). A frequency synthesis circuit (27) receives a frequency selection value on control lines (FREQ) that include an integer and a fraction portion. The integer and fraction portion of the frequency selection value are added to the current contents of a register (40) that stores the previous integer value used to select the corresponding phase from VCO (30) for application to the clock input of a toggle flip-flop (36) from which the output clock (COUT) is generated. Use of the fraction portion permits a time-averaged clock frequency to be produced with more precision than the multiple phases output by the VCO (30).

Abstract: A device having a thin metallic coating, such as tin which forms strong bonds to copper is provided on the bond pads of an integrated circuit having copper metallization; surface oxidation of the coating is self limiting and the oxides are readily removed, further the coated bond pad forms intermetallics at low temperatures making it both solderable and compatible with wire bonding. A low cost process for forming tin coated copper bonding pads is provided by electroless plating.

Abstract: A method of making connection between an aluminum or aluminum based material and tungsten. The method includes providing an underlying region containing a layer of tungsten thereover. The underlying region is preferably a layer of titanium over which is a layer of titanium nitride. The layer of tungsten is etched back to the underlying region while exposed tungsten is retained over a portion of the underlying region. The underlying region also may contain a via therein which contains the exposed tungsten. An nitrogen-containing plasma, preferably elemental nitrogen, is then applied to the exposed tungsten and exposed underlying region and a layer of a barrier material is formed by reaction of the nitrogen in the plasma and the tungsten over the exposed tungsten. A further barrier layer, preferably titanium nitride, is optionally then applied followed by a layer of aluminum over the exposed surface, the barrier layer isolating the layer of aluminum from the tungsten.

Abstract: An approach to reduce noise associated with ground bounce in integrated circuits containing CMOS gates and drivers is provided. Typical CMOS gates and drivers consist of complementary pairs of MOS gates. As the CMOS driver input transitions from high to low or low to high, there is a brief period during which both gates of a CMOS are conductive. When both gates are on, voltage and/or current spikes can occur from a variety of sources, including parasitic inductance between the gate and its external power supply. Disruptions, bounces, and sinks in voltage and/or current can create noise which can be propagated throughout a chip, potentially resulting in operational errors. The present invention adds a high and low reference voltage and two or more pairs of CMOS gates to each gate's circuit to dynamically add charge and/or draw charge from the CMOS gate as needed to reduce ground bounce and noise.

Abstract: An A/D converter for sampling an input signal includes a reference circuit for generating a reference signal, a comparing circuit for comparing the input signal with the reference signal to produce a digital signal in response to the difference between the input signal and the reference signal, a first latch to latch the digital signal, a second latch to latch the digital signal, a first switch connected between the comparing circuit and the first latch, and a second switch connected between the comparing circuit and the second latch. The first switch and the second switch alternately operate.