Abstract: A novel therapeutic drug for malignant tumors, cancer stem cells, or fibrosis is obtained. A therapeutic drug for malignant tumors or cancer stem cells is used that includes at least one compound selected from the group consisting of compounds represented by formulas (1), (2), and (5), a salt thereof, or a solvate thereof. Alternatively, a therapeutic drug for fibrosis can be used that includes at least one compound selected from the group consisting of compounds represented by formulas (1), (2), and (5), a salt thereof, or a solvate thereof.

Abstract: Hybrid polymer-inorganic nanocolloids and methods of making them are described.

Abstract: Methods, systems, and computer readable media for machine translation between Arabic language and Arabic Sign Language are described.

Abstract: A shape memory material-based minimally invasive implantation with end part self-expanding structure, and an implant having the structure. The implant includes an actuating component; the implant has a first shape and a second shape, and comprises a central part and multiple end parts which are substantially symmetrically distributed; the second shape has a larger area than the first shape; the actuating component is able to enable the end parts to move along a direction away from the central part of the implant, so that the implant is transformed from the first shape to the second shape. The present invention can allow an implant to have a small size before it is implanted and to be expanded into a structure having a larger size after implantation.

Abstract: Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

Abstract: Disclosed are a wellbore inspection system and method for an ultra-deep vertical shaft. The wellbore inspection system includes a wire rope moving system, inspection robots, a visual image acquisition system, a wireless communication module, a central control system, and an image post-processing system of an upper computer. The wire rope moving system includes a surface wire rope guide rail, an underground wire rope guide rail, a surface wire rope moving device, an underground wire rope moving device, and a wire rope. The visual image acquisition system includes explosion-proof cameras. After image information acquired by the explosion-proof cameras is processed by a lower computer, the processed image is transmitted by a wireless image transmission module to the image post-processing system of the upper computer. The central control system is connected to the inspection robots and the wire rope moving system, and the inspection robots are connected to the central control system.

Abstract: According to a data analysis method by which time required for data analysis is shortened and practicality is improved, a client terminal requests institution terminals to perform analysis of a matching attribute; each of the institution terminals encrypts an element belonging to the matching attribute within a database and sends the converted data to an outsource terminal; the outsource terminal integrates the plurality of converted data sent from the institution terminals and sends the integrated converted data to the institution terminals; and each of the institution terminals compares each matching attribute of a plurality of the elements within the database of the institution terminal against the integrated converted data, thereby identifying, as a common element, an element associated with the matching attribute and held in common by the institution terminals.

Abstract: Resolving an exception situation in autonomous driving includes receiving an assistance request to resolve the exception situation from an autonomous vehicle (AV); identifying a solution to the exception situation; forwarding the solution to a tele-operator; receiving a request for playback data from the tele-operator; receiving, from the AV, the playback data; and obtaining, from the tele-operator, a validated solution based on the tele-operator using the playback data. The playback data includes snapshots ni of data related to autonomous driving stored at the AV at respective consecutive times ti, for i=1, . . . , N.

Abstract: A vibration unit assembly for a belt conveyor has a vibration element, and vibration generator and a connection assembly. The vibration generator is operatively connected to the vibration element for inducing vibrations in the vibration element. The connection assembly connects the vibration element to the belt conveyor so that the vibration element may move relative to the belt conveyor. A contact surface of the vibration element engages a material to vibrate and compress the material as it is transported on the belt conveyor. The vibration element may include a plate or a roller. A method for treating a material involves applying a vibration force and applying a compressive force to compact the material. A method for drying a material involves applying a vibration force to the material to release fluid and applying a compressive force to compact the material.

Abstract: A bulk permanent magnetic material may include between about 5 volume percent and about 40 volume percent Fe16N2 phase domains, a plurality of nonmagnetic atoms or molecules forming domain wall pinning sites, and a balance soft magnetic material, wherein at least some of the soft magnetic material is magnetically coupled to the Fe16N2 phase domains via exchange spring coupling. In some examples, a bulk permanent magnetic material may be formed by implanting N+ ions in an iron workpiece using ion implantation to form an iron nitride workpiece, pre-annealing the iron nitride workpiece to attach the iron nitride workpiece to a substrate, and post-annealing the iron nitride workpiece to form Fe16N2 phase domains within the iron nitride workpiece.

Abstract: Embodiments concern methods and compositions for treating or preventing a bacterial infection, particularly infection by a Staphylococcus bacterium. Aspects include methods and compositions for providing a passive immune response against the bacteria. In certain embodiments, the methods and compositions involve an antibody that binds Coagulase (Coa). Further aspects relate to immunogenic compositions comprising at least one Staphylococcal coagulase R Domain, wherein the R Domain is 80% identical in sequence to a R Domain.

Abstract: A manufacturing system for an inkjet printing flexible display device includes a substrate input module, a substrate transferring module, a printing module, a post-printing processing module, a solid content detection module, a film packaging printing module, a film formation detection module, a substrate output module. At the same time, the functional modules are highly integrated and optimized in structure and layout. The manufacturing system for the inkjet printing flexible display device is suitable for industrial production and are adopted to monitor the manufacturing process by using a plurality of detection modules.

Abstract: Various examples are provided related to diode clamped solid-state circuit breakers (SSCBs). Their configuration allows operation of the SSCB without dynamic voltage balancing issues. In one example, a diode clamped SSCB includes source-side switches and line-side switches connected between a DC source connection and a line-side connection. Clamping capacitors are connected at a common connection point between the source-side and line side switches and source-side and line-side clamping diodes are connected between the source-side switches and line-side switches and the clamping capacitors. Sequential switching of the source-side switches or line-side switches can avoid dynamic voltage balancing issues.

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

Abstract: Functionalized substrates are provided comprising a substrate and a plurality of transition metal dichalcogenide (TMD) heterostructures on a surface of the substrate, each TMD heterostructure comprising a TMD shell over a heterogeneous nucleation site, thereby providing a core-shell heterostructure, the heterogeneous nucleation site composed of a heterogeneous nucleation material; and a TMD wing extending outwardly from the core-shell heterostructure and non-parallel to and above the substrate surface. Electrocatalytic systems comprising the functionalized substrates are also provided.

Abstract: Clustering-based methods, apparatuses for frequency offset determination and elimination and electronic devices are disclosed. The clustering-based method for frequency offset determination includes: determining a constellation diagram for a received signal; determining N different values within a preset frequency interval, as N frequency offset estimates for a frequency offset of the received signal; for each of the frequency offset estimates, correcting the constellation diagram based on the frequency offset estimate to obtain a corrected constellation diagram, clustering signal points on the corrected constellation diagram, and calculating an area of a signal region in the corrected constellation diagram after clustering; and determining a frequency offset estimate corresponding to a signal region with a minimum area as a value of the frequency offset. The embodiments of the present invention can improve the accuracy and stability of the calculated value of the frequency offset.

Abstract: Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Abstract: The present invention provides a probability mass redistributor device comprising an input port and an output port. The device comprises a mapping block configured to perform a selected mapping function from a plurality of mapping functions on a random bitstream to generate an output signal having a desired probability mass function, at least one difference block, wherein the input to the at least one difference block comprises the output from the mapping block, and the output of the at least one difference block produces a modulation term, and wherein the output of each difference block is the difference between a previous value of the input signal to the block and a current value of the input signal to the block, and a summing block for summing a signal received by the input port and the modulation term to form an output signal.

Abstract: An operation method of a first communication node in a communication network identifies a number of second communication nodes receiving messages in a first reception mode and a number of third communication nodes receiving messages in a second reception mode. A transmission mode is determined for transmitting a wireless access in vehicular environments service advertisement (WSA) message based on the identified numbers. A transmission period is then determined for transmitting the WSA message based on the transmission mode. The WSA message is transmitted based on the transmission mode and the transmission period. A protocol used for the first reception mode is different from a protocol used for the second reception mode.

Abstract: A gas detecting apparatus and a gas detecting method based on terahertz spectroscopy are provided. The apparatus includes a sample chamber allowing a terahertz wave to pass therethrough; a gas feeding unit connected to the sample chamber to feed gas into the sample chamber; a gas outputting unit connected to the sample chamber to output gas from the sample chamber; and a vacuum pump connected to the sample chamber to evacuate the sample chamber. The apparatus further comprises one or more of a pressure gauge disposed on the sample chamber, an anemometer disposed on the sample chamber, a humidity regulation device connected to the sample chamber, and a temperature regulation device connected to the sample chamber.