Abstract: Disclosed embodiments relate to systems for performing instructions to quickly convert and use matrices (tiles) as one-dimensional vectors. In one example, a processor includes fetch circuitry to fetch an instruction having fields to specify an opcode, locations of a two-dimensional (2D) matrix and a one-dimensional (1D) vector, and a group of elements comprising one of a row, part of a row, multiple rows, a column, part of a column, multiple columns, and a rectangular sub-tile of the specified 2D matrix, and wherein the opcode is to indicate a move of the specified group between the 2D matrix and the 1D vector, decode circuitry to decode the fetched instruction; and execution circuitry, responsive to the decoded instruction, when the opcode specifies a move from 1D, to move contents of the specified 1D vector to the specified group of elements.

Abstract: Some aspects relate to an apparatus, method and/or system of radar tracking. For example, a radar tracker may be configured to generate target tracking information corresponding to a plurality of targets in an environment of a radar device. For example, the radar tracker may include a processor configured to determine the target tracking information based on a plurality of multi-target density functions corresponding to a respective plurality of target types, and to update the plurality of multi-target density functions based on detection information corresponding to a plurality of detections in the environment. For example, the radar tracker may include an output to output the target tracking information.

Abstract: Examples described herein relate to an apparatus comprising: circuitry to receive a request to store data as a part of a matrix in a memory device; circuitry to allocate address mappings to the data to reduce a number of sequential accesses to a same partition of a portion of the memory device; circuitry to store the address mappings for access with a read operation; and circuitry to cause storage of the data into the memory device according to the address mappings. In some examples, the matrix comprises one or more columns and/or one or more rows. In some examples, the memory device comprises one or more of: a three-dimensional (3D) cross point memory device, volatile memory device, or non-volatile memory device.

Abstract: Per channel thermal management techniques are described herein. In one example, a memory controller receives channel temperature information for one or more channels of one or more dies in the stack. The memory controller can then throttle commands at a channel-level based on the channel temperature information. In one example, row commands and column commands to a channel are throttled at independent rates based on the channel temperature information. In one example, a row command throttling rate or column command throttling rate is based on a ratio of alternating on-time to off time of throttling signals, or a window of time in which commands are enabled or disabled to a channel. In one example, the row and column command throttling signals can be staggered across channels or pseudo channels.

Abstract: A mechanism is described for facilitating cinematic space-time view synthesis in computing environments according to one embodiment. A method of embodiments, as described herein, includes capturing, by one or more cameras, multiple images at multiple positions or multiple points in times, where the multiple images represent multiple views of an object or a scene, where the one or more cameras are coupled to one or more processors of a computing device. The method further includes synthesizing, by a neural network, the multiple images into a single image including a middle image of the multiple images and representing an intermediary view of the multiple views.

Abstract: Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

Abstract: Sensing circuits and techniques for NAND memory that can enable improved read disturb on the selected SGS are described herein. In one example, a reverse sensing circuit includes circuitry coupled with a bitline of the string of NAND memory cells to perform a sensing operation. The circuitry charges the bitline of the string of NAND memory cells to a target bitline voltage and applies a voltage to the source line that is higher than the bitline voltage. The sense current flows through the string from the source line to the bitline. The voltage at a sensing node that is indicative of a threshold voltage of a memory cell can then be detected.

Abstract: Techniques are disclosed for forming integrated circuit structures having a plurality of semiconductor fins, which in turn can be used to form non-planar transistor structures. The techniques include a mid-process removal of one or more partially-formed fins. The resulting integrated circuit structure includes a plurality of semiconductor fins having relatively uniform dimensions (e.g., fin width and trough depth). In an embodiment, the fin forming procedure includes partially forming a plurality of fins, using a selective etch stop built into the semiconductor structure in which the fins are being formed. One or more of the partially-formed fins are removed via sacrificial fin cut mask layer(s). After fin removal, the process continues by further etching trenches between the partially-formed fins (deep etch) to form portion of fins that will ultimately include transistor channel portion. A liner material may be deposited to protect the partially-formed fins during this subsequent deep trench etch.

Abstract: Apparatus and method for scalable representations of arbitrary quantum computing rotations. For example, one embodiment of an apparatus comprises: a memory to store a first waveform; and a base envelope generator to implement a base envelope, the base envelope applied to the first waveform to generate a second waveform usable to cause quantum rotation of a specified angle on a target quantum bit (qubit) of a quantum processor, and wherein the base envelope is selected out of a first plurality of envelopes based one or more characteristics specific to the target qubit on which the quantum rotation is performed.

Abstract: A method of fabricating an integrated circuit structure comprises depositing an oxide insulator layer over a substrate having fins. A gate trench is formed within the oxide insulator layer with the fins extending above a surface of the oxide insulator layer within the gate trench. A semiconducting oxide material is deposited to conformally cover the oxide insulator layer, including on top surfaces and sidewalls of both the gate trench and the fins. A gate material is deposited to conformally cover the semiconducting oxide material, including on top surfaces and sidewalls of both the gate trench and the fins. An angled etch is performed to remove the gate material selective to the semiconducting oxide material from sidewalls of the gate trench, but not from sidewalls of the fins.

Abstract: Methods, apparatus, systems and articles of manufacture to dynamically control devices based on distributed data are disclosed. An example apparatus includes a comparator to compare a first measurement measured by a first peer device to a second measurement, the second measurement being measured locally by the apparatus; and an operation adjuster to, when the comparison satisfies a threshold, adjust a measurement protocol of the first peer device.

Abstract: An integrated circuit interconnect structure includes a metallization level above a first device level. The metallization level includes an interconnect structure coupled to the device structure, a conductive cap including an alloy of a metal of the interconnect structure and either silicon or germanium on an uppermost surface of the interconnect structure. A second device level above the conductive cap includes a transistor coupled with the conductive cap. The transistor includes a channel layer including a semiconductor material, where at least one sidewall of the conductive cap is co-planar with a sidewall of the channel layer. The transistor further includes a gate on a first portion of the channel layer, where the gate is between a source region and a drain region, where one of the source or the drain region is in contact with the conductive cap.

Abstract: In one embodiment, an apparatus includes a processor comprising at least one core to execute instructions of a plurality of virtual machines (VMs) and a virtual machine monitor (VMM), and a cryptographic engine to protect data associated with the plurality of VMs through use of a plurality of private keys and a trusted transformer key, where each of the plurality of private keys are to protect program instructions and data of a respective VM and the trusted transformer key is to protect management structure data for the plurality of VMs. The processor is further to provide, to the VMM, read and write access to the management structure data through an untrusted transformer key.

Abstract: Connectors with a hybrid pitch are described. In one example, a connector to couple a card or module to a motherboard includes connector housing and a plurality of pins. The plurality of pins include alternating signal and ground pins. Each of the plurality of pins includes a card or module-facing end to couple with the card or module and a lead to couple with a through hole in the motherboard. A first pitch between leads of a pin and a first adjacent pin is different than a second pitch between leads of the pin and a second adjacent pin.

Abstract: A transistor comprises a substrate, a pair of spacers on the substrate, a gate dielectric layer on the substrate and between the pair of spacers, a gate electrode layer on the gate dielectric layer and between the pair of spacers, an insulating cap layer on the gate electrode layer and between the pair of spacers, and a pair of diffusion regions adjacent to the pair of spacers. The insulating cap layer forms an etch stop structure that is self aligned to the gate and prevents the contact etch from exposing the gate electrode, thereby preventing a short between the gate and contact. The insulator-cap layer enables self-aligned contacts, allowing initial patterning of wider contacts that are more robust to patterning limitations.

Abstract: A clock buffer that uses low-to-medium quality factor (e.g., QF of 2 to 5) inductors in shunt-series and in series-shunt configuration in high-speed clock distribution stages. Shunt-series and series-shunt inductors extend amplifier bandwidth. Applying shunt-series and series-shunt inductors to high-speed clock distribution filters jitter, attenuates supply noise, and improves fanout. An asymmetric multiplexer with inductors in shunt or in shunt-series configurations. Another asymmetric multiplexer with capacitively coupled tri-stateable inverter-based buffer stages. These two multiplexer techniques along with the ability to ‘hide’ a load of a non-preferred path at a virtual ground node of the shunt inductor, the multiplexer improves the jitter and power consumption of the preferred path significantly. A de-multiplexer (DeMux) is also shown using inductors. A combination of a shunt-multiplexer and an inductor-based DeMux is also discussed.

Abstract: Waveguide interconnects for semiconductor packages are disclosed. An example semiconductor package includes a first semiconductor die, a second semiconductor die, and a substrate positioned between the first and second dies. The substrate includes a waveguide interconnect to provide a communication channel to carry an electromagnetic signal. The waveguide interconnect is defined by a plurality of through substrate vias (TSVs). The TSVs in a pattern around the at least the portion of the substrate to define a boundary of the communication channel.

Abstract: An example computing device comprises a processor to be coupled to a display device, and a boot controller coupled to the processor and to be coupled to the display device. The boot controller is configured to detect a power signal, receive sensor data detected by one or more sensors prior to an operating system being loaded by a boot process of the processor, determine a posture associated with the display device based on the sensor data detected by the one or more sensors, and communicate, to the display device, posture information indicating the posture associated with the display device. Pre-boot content is to be displayed on a display panel of the display device in a first arrangement based on the posture information. In more specific embodiments, determining the posture includes determining at least an orientation of the display device and whether a peripheral is present on the display device.

Abstract: Disclosed herein are techniques to coordinate power management between a platform and a panel. Provided are apparatuses, techniques, and circuitry to determine whether to initiate power management features in a panel and send a signal from a platform to the panel including an indication that no frame updates are expected and power management functions can be initiated.

Abstract: A processor includes a plurality of cores, at least two of which may execute redundantly, a configuration register to store a first synchronization domain indicator to indicate that a first core and a second core are associated with a first synchronization domain, and a power controller having a synchronization circuit to cause a dynamic adjustment to a frequency of at least one of the first and second cores to cause these cores to operate at a common frequency, based at least in part on the first synchronization domain indicator.

Abstract: A dielectric layer and a method of forming thereof. An opening defined in a dielectric layer and a wire deposited within the opening, wherein the wire includes a core material surrounded by a jacket material, wherein the jacket material exhibits a first resistivity ?1 and the core material exhibits a second resistivity ?2 and ?2 is less than ?1.

Abstract: Disclosed embodiments are related to techniques for powering compute platforms in low temperature environments. Embodiments include a preheating stage that is added to a power up sequence. The preheating stage may include a force-on stage and a force-offstage. During the force-on stage, all power rails of target components are forced to an ON state so that the target components consume current. When a target operating temperature is reached, the power rails of the target components are turned off, which causes the target components to revert back to their initial (pre-boot) state allowing the normal boot process to take place. Since the target components are now heated up, the boot process can execute faster than when the target components were cold. Other embodiments may be described and/or claimed.

Abstract: Apparatus and method for encoding sub-primitives to improve ray tracing efficiency. For example, one embodiment of an apparatus comprises: a ray generator to generate a plurality of rays in a ray tracing graphics pipeline; a sub-primitive generator to subdivide each primitive of a plurality of primitives into a plurality of sub-primitives; a sub-primitive encoder to identify a first subset of the plurality of sub-primitives as being fully transparent and to identify a second subset of the plurality of sub-primitives as being fully opaque; and wherein the first subset of the plurality of primitives identified as being fully transparent are culled prior to further processing of each respective primitive.

Abstract: An electronic substrate may be formed having at least one dielectric layer that is heterogeneous. The heterogeneous dielectric layer may comprise three separately formed materials that decouple the critical regions within a dielectric layer and allow for the optimization of desired interfacial properties, while minimizing the impact to the bulk requirements of the electronic substrate.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to packages that include CPUs and PICs electrically coupled via an interconnect bridge. In embodiments, the PIC are electrically coupled with the EMIB using a fan out RDL to extend reach of the PIC electrical connectors. EICs may be electrically coupled between the PIC and the interconnect bridge. The CPUs may be CPUS, graphical processing units (GPUs), field programmable gate arrays (FPGAs), or other processors. Other embodiments may be described and/or claimed.

Abstract: Disclosed herein are capacitors and resistors at direct bonding interfaces in microelectronic assemblies, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component and a second microelectronic component, wherein a direct bonding interface of the second microelectronic component is direct bonded to a direct bonding interface of the first microelectronic component, the microelectronic assembly includes a sensor, the sensor includes a first sensor plate and a second sensor plate, the first sensor plate is at the direct bonding interface of the first microelectronic component, and the second sensor plate is at the direct bonding interface of the second microelectronic component.

Abstract: Described herein are IC devices include patterned conductive layers, such as metal gratings and gate layers, and patterned layers formed over the patterned conductive layers using a directed self-assembly (DSA)-enabled process with DSA assisting features. A patterned conductive layer may have non-uniform features, such as large regions of insulator within a metal grating, or varying gate lengths across a gate layer. The DSA assisting features enable the formation of patterned layers, e.g., layers with different hard mask materials replicating the structure of the conductive layer below, even over non-uniform features.

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack structure of a quantum dot device, wherein the quantum well stack structure includes an insulating material to define multiple rows of quantum dot formation regions; and a gate that extends over multiple ones of the rows.

Abstract: Example systems, apparatus, articles of manufacture, and methods that perform memory preservation to improve system reliability are disclosed. Example apparatus disclosed herein increment an error count after detection of an error associated with a memory cell. Example apparatus also isolate a system memory address of the memory cell based on the error count.

Abstract: Methods of selectively transferring portions of layers between substrates, and devices and systems formed using the same, are disclosed herein. In one embodiment, a first substrate with a layer of integrated circuit (IC) components is received, and a second substrate with one or more adhesive areas is received. The first substrate is partially bonded to the second substrate, such that a subset of IC components on the first substrate are bonded to the adhesive areas on the second substrate. The first substrate is then separated from the second substrate, and the subset of IC components bonded to the second substrate are separated from the first substrate and remain on the second substrate.

Abstract: Embodiments described herein include software, firmware, and hardware logic that provides techniques to perform arithmetic on sparse data via a systolic processing unit. One embodiment provides for data aware sparsity via compressed bitstreams. One embodiment provides for block sparse dot product instructions. One embodiment provides for a depth-wise adapter for a systolic array.

Abstract: Disclosed herein are microelectronic assemblies and related devices and methods. In some embodiments, a microelectronic assembly may include a glass layer having a surface, the glass layer including conductive through-glass vias (TGVs); a dielectric layer at the surface of the glass layer, the dielectric layer including conductive pathways; and interconnects between the surface of the glass layer and the dielectric layer, wherein individual interconnects electrically couple individual TGVs to individual conductive pathways. In some embodiments, the interconnects include solder or liquid metal ink. In some embodiments, the interconnects include metal-metal bonds and dielectric-dielectric bonds.

Abstract: An example IC structure includes a first layer comprising a plurality of transistors; a second layer comprising a stack of layers of one or more insulator materials and conductive interconnect structures extending through the one or more insulator materials; a third layer comprising bonding pads, wherein the second layer is between the first layer and the third layer; and a via continuously extending between one of the bonding pads and one of the conductive interconnect structures in a bottom layer of the stack of layers or a conductive structure in the first layer, wherein the bottom layer is a layer of the stack of layers that is closer to the first layer than all other layers of the stack of layers.

Abstract: An IC device may include memory layers over a logic layer. A memory layer may include memory arrays and one or more peripheral circuits coupled to the memory arrays. A memory array may include memory cells arranged in rows and columns. A row of memory cells may be associated with a word line. A column of memory cells may be associated with a bit line. The logic layer includes one or more logic circuits that can control data read operations and data write operations of the memory layers. The logic layer may also include a power interconnect, which facilitates power delivery to the memory layers, and a signal interconnect, which facilitates signal transmission within the IC device. The IC device may further include vias that couple the memory layers to the logic layer. Each via may be connected to one or more memory layers and the logic layer.

Abstract: One embodiment provides a graphics processor comprising an interface to a system interconnect and a graphics processor coupled to the interface, the graphics processor comprising circuitry configured to compact sample data for multiple sample locations of a pixel, map the multiple sample locations to memory locations that store compacted sample data, the memory locations in a memory of the graphics processor, apply lossless compression to the compacted sample data, and update a compression control surface associated with the memory locations, the compression control surface to specify a compression status for the memory locations

Abstract: An integrated circuit includes an update controller circuit, updatable logic circuits, and an output circuit. The update controller circuit is configured to control an output signal of the output circuit that is provided to an external conductor during reconfiguration of the updatable logic circuits.

Abstract: Techniques to perform time recovery from attacks on delayed authentication in a time synchronized network are described. One embodiment comprises a method for decoding time information and a message authentication code (MAC) from a time message, the time information to synchronize a local clock for a device to a network time of a time synchronized network (TSN), and the MAC to authenticate the time message, determining whether the time message is authentic using the MAC, discarding the time information when the time message is not authentic, performing a bounded search to identify authentic time information using the MAC, and passing the authentic time information to a clock manager to synchronize the local clock to the network time of the TSN when the authentic time information is identified. Other embodiments are described and claimed.

Abstract: Technologies for providing secure utilization of tenant keys include a compute device. The compute device includes circuitry configured to obtain a tenant key. The circuitry is also configured to receive encrypted data associated with a tenant. The encrypted data defines an encrypted image that is executable by the compute device to perform a workload on behalf of the tenant in a virtualized environment. Further, the circuitry is configured to utilize the tenant key to decrypt the encrypted data and execute the workload without exposing the tenant key to a memory that is accessible to another workload associated with another tenant.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer having first dies in a first insulating material; a second layer on the first layer, the second layer including second dies having a first thickness and third dies having a second thickness different than the first thickness, the second dies and the third dies in a second insulating material, wherein the second dies and third dies have a first surface and an opposing second surface, and wherein the first surfaces of the second and third dies have a combined surface area between 3,000 square millimeters (mm2) and 9,000 mm2; and a redistribution layer (RDL) between the first layer and the second layer, the RDL including conductive pathways, wherein the first dies are electrically coupled to the second dies and the third dies by the conductive pathways and by interconnects.

Abstract: Methods of selectively transferring integrated circuit (IC) components between substrates, and devices and systems formed using the same, are disclosed herein. In one embodiment, a first substrate with a release layer and a layer of IC components over the release layer is received, and a second substrate with one or more adhesive areas is received. The layer of IC components may include one or more waveguides, ring resonators, drivers, photodetectors, transimpedance amplifiers, and/or electronic integrated circuits. The first substrate is partially bonded to the second substrate, such that a subset of IC components on the first substrate are bonded to the adhesive areas on the second substrate. The first substrate is then separated from the second substrate, and the subset of IC components bonded to the second substrate are separated from the first substrate and remain on the second substrate.

Abstract: A disaggregated processor package can be configured to accept interchangeable chiplets. Interchangeability is enabled by specifying a standard physical interconnect for chiplets that can enable the chiplet to interface with a fabric or bridge interconnect. Chiplets from different IP designers can conform to the common interconnect, enabling such chiplets to be interchangeable during assembly. The fabric and bridge interconnects logic on the chiplet can then be configured to confirm with the actual interconnect layout of the on-board logic of the chiplet. Additionally, data from chiplets can be transmitted across an inter-chiplet fabric using encapsulation, such that the actual data being transferred is opaque to the fabric, further enable interchangeability of the individual chiplets. With such an interchangeable design, cache or DRAM memory can be inserted into memory chiplet slots, while compute or graphics chiplets with a higher or lower core count can be inserted into logic chiplet slots.

Abstract: Embodiments described herein include software, firmware, and hardware logic that provides techniques to perform arithmetic on sparse data via a systolic processing unit. One embodiment provides techniques to optimize training and inference on a systolic array when using sparse data. One embodiment provides techniques to use decompression information when performing sparse compute operations. One embodiment enables the disaggregation of special function compute arrays via a shared reg file. One embodiment enables packed data compress and expand operations on a GPGPU. One embodiment provides techniques to exploit block sparsity within the cache hierarchy of a GPGPU.

Abstract: An IC device may include memory layers bonded to a logic layer with inclination. An angle between a memory layer and the logic layer may be in a range from approximately 0 to approximately 90 degrees. The memory layers may be over the logic layer. The IC device may include one or more additional logic layers that are parallel to a memory layer or perpendicular to a memory layer. The one or more additional logic layers may be over the logic layer. A memory layer may include memory cells. The logic layer may include logic circuits (e.g., sense amplifier, word line driver, etc.) that control the memory cells. Bit lines (or word lines) in different memory layers may be coupled to each other. A bit line and a word line in a memory layer may be controlled by logic circuits in different logic layers.

Abstract: Technologies for fiber array unit (FAU) lid designs are disclosed. In one embodiment, channels in the lid allow for suction to be applied to fibers that the lid covers, pulling the fibers into place in a V-groove. The suction can hold the fibers in place as the fiber array unit is mated with a photonic integrated circuit (PIC) die. Additionally or alternatively, channels can be on pitch, allowing for pulling the FAU towards a PIC die as well as sensing the position and alignment of the FAU to the PIC die. In another embodiment, a warpage amount of a PIC die is characterized, and a FAU lid with a similar warpage is fabricated, allowing for the FAU to position fibers correctly relative to waveguides in the PIC die. In another embodiment, a FAU has an extended lid, which can provide fiber protection as well as position and parallelism tolerance control.

Abstract: In one embodiment, a device includes a fiber array unit (FAU) coupled to a photonics integrated circuit (PIC) die. The PIC die includes a cavity defined at an edge of the PIC die, with outer edges of the cavity being formed at an angle less than 90 degrees with respect to a bottom surface of the cavity. The PIC die further includes first waveguides protruding into the cavity of the PIC die. The FAU includes a shelf portion extending from a body portion, and a plurality of second waveguides protruding from an outer edge of the shelf portion opposite the body portion. The FAU further includes alignment structures on outer edges of the shelf portion that are in contact with the angled edges of the cavity of the PIC die.

Abstract: Apparatuses, methods, and computer readable media for regulating command submission to a shared device. A processor may receive a command for an operation to be performed by another device. The processor may determine an identifier of an address space of a process associated with the command. The processor may determine whether to accept or reject the command.

Abstract: Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gates above the quantum well stack; and a plurality of second gates above the quantum well stack; wherein the plurality of first gates are arranged in electrically continuous rows extending in a first direction, and the plurality of second gates are arranged in electrically continuous rows extending in a second direction perpendicular to the first direction.

Abstract: Methods of selectively transferring portions of layers between substrates, and devices and systems formed using the same, are disclosed herein. In one embodiment, a first substrate with a release layer and a layer of integrated circuit (IC) components over the release layer is received, and a second substrate with one or more adhesive areas is received. The release layer on the first substrate is weakened. The first substrate is partially bonded to the second substrate, such that a subset of IC components on the first substrate are bonded to the adhesive areas on the second substrate. The first substrate is then separated from the second substrate, and the subset of IC components bonded to the second substrate are separated from the first substrate and remain on the second substrate.

Abstract: Techniques for quality of service (QoS) support for input/output devices and other agents are described. In embodiments, a processing device includes execution circuitry to execute a plurality of software threads; hardware to control monitoring or allocating, among the plurality of software threads, one or more shared resources; and configuration storage to enable the monitoring or allocating of the one or more shared resources among the plurality of software threads and one or more channels through which one or more devices are to be connected to the one or more shared resources.

Abstract: An apparatus includes a host interface, a network interface, and programmable circuitry communicably coupled to the host interface and the network interface, the programmable circuitry comprising one or more processors are to implement network interface functionality and are to receive a prompt directed to an artificial intelligence (AI) model hosted by a host device communicably coupled to the host interface, apply a prompt tuning model to the prompt to generate an initial augmented prompt, compare the initial augmented prompt for a match with stored data of a prompt augmentation tracking table comprising real-time datacenter trend data and cross-network historical augmentation data from programmable network interface devices in a datacenter hosting the apparatus, generate, in response to identification of the match with the stored data, a final augmented prompt based on the match, and transmit the final augmented prompt to the AI model.