Abstract: A method for forming a semiconductor arrangement comprises forming a fin over a semiconductor layer. A gate structure is formed over a first portion of the fin. A second portion of the fin adjacent to the first portion of the fin and a portion of the semiconductor layer below the second portion of the fin are removed to define a recess. A stress-inducing material is formed in the recess. A first semiconductor material is formed in the recess over the stress-inducing material. The first semiconductor material is different than the stress-inducing material.

Abstract: An integrated circuit includes a semiconductor nanostructure transistor. The semiconductor nanostructure transistor includes a plurality of semiconductor nanostructures corresponding to channel regions conductor Nanostructure transistor. A gate metal surrounds the semiconductor nanostructures. The gate metal has differing gate length dimension above the semiconductor nanostructures compared to the gate length between the semiconductor nanostructures.

Abstract: In an embodiment, a device includes: a first nanostructure over a substrate, the first nanostructure including a channel region and a first lightly doped source/drain region, the first lightly doped source/drain region adjacent the channel region; a first epitaxial source/drain region wrapped around four sides of the first lightly doped source/drain region; an interlayer dielectric over the first epitaxial source/drain region; a source/drain contact extending through the interlayer dielectric, the source/drain contact wrapped around four sides of the first epitaxial source/drain region; and a gate stack adjacent the source/drain contact and the first epitaxial source/drain region, the gate stack wrapped around four sides of the channel region.

Abstract: The present disclosure relates to a semiconductor device having a backside source/drain contact, and method for forming the device. The semiconductor device includes a source/drain feature having a top surface and a bottom surface, a first silicide layer formed in contact with the top surface of the source/drain feature, a first conductive feature formed on the first silicide layer, and a second conductive feature having a body portion and a first sidewall portion extending from the body portion, wherein the body portion is below the bottom surface of the source/drain feature, and the first sidewall portion is in contact with the first conductive feature.

Abstract: The present disclosure provides a fixed-position defect doping method for a micro-nanostructure based on a self-alignment process, including: S1, sequentially forming a sacrificial layer and a photoresist layer on a surface of a crystal substrate; S2, performing a lithography on the photoresist layer to form a mask hole according to a micro-nano pattern; S3, performing an isotropic etching on the sacrificial layer through the mask hole, and amplifying the micro-nano pattern to the sacrificial layer; S4, performing an ion implantation doping on an exposed crystal surface below the mask hole; S5, removing the photoresist layer, and depositing a mask material; S6, removing the sacrificial layer, and transferring a micro-nano amplified pattern in the sacrificial layer to a mask material pattern; and S7, etching an exposed crystal surface, and removing the mask material on the surface and forming a specific defect by annealing.

Abstract: A semiconductor device according to the present disclosure includes a vertical stack of channel members, a gate structure over and around the vertical stack of channel members, and a first source/drain feature and a second source/drain feature. Each of the vertical stack of channel members extends along a first direction between the first source/drain feature and the second source/drain feature. Each of the vertical stack of channel members is spaced apart from the first source/drain feature by a silicide feature.

Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a substrate, an isolation layer, a gate stack structure, and a dielectric layer. The method includes partially removing the gate stack structure to form a first trench in the gate stack structure. The method includes forming an isolation structure in the first trench. The method includes removing the first gate stack and the second gate stack to form a first recess and a second recess in the dielectric layer. The method includes forming an n-type gate stack and a p-type gate stack in the first recess and the second recess respectively. The method includes forming a conductive line over the n-type gate stack, the p-type gate stack, and the isolation structure. The conductive line electrically connects the n-type gate stack to the p-type gate stack.

Abstract: A plasma processing apparatus for semiconductor processing includes an injector holder configured to removably mate with a structure defining an interior chamber of a plasma processing apparatus. The injector holder defines a first opening. A sleeve is configured to be received within the first opening, and the sleeve defines a second opening. A gas injector is configured to be received within the second opening of the sleeve.

Abstract: The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench, depositing a first ferroelectric layer over the interfacial layer, removing the first ferroelectric layer from the nFET structure, depositing a metal oxide layer in each gate trench, depositing a second ferroelectric layer over the metal oxide layer, removing the second ferroelectric layer from the pFET structure, and depositing a gate electrode in each gate trench.

Abstract: The present invention provides uses of an andrographolide derivative in preparation of a medicament for preventing and treating inflammatory bowel disease. The andrographolide derivative AL-1 has the mechanisms, for the treatment of ulcerative colitis, of scavenging of free radicals, inhibition of NF-?B signaling pathway activation and COX-2 expression, activation of PPAR-? expression, and thus can prevent the transcription and expression of inflammatory-related genes to improve the conditions of inflammation. AL-1 can be used as a medicine for the treatment of inflammatory bowel disease and can be formulated to various dosage forms with a pharmaceutically acceptable carrier.

Abstract: Detecting anomalous data by applying a plurality of models to a data set to yield detection results including anomalous data, applying evaluation methods to the detection results for each of the plurality of models, determining a combined score for the detection results according to the evaluation methods, determining a combined score threshold, and defining a set of detected anomalies according to the combined score and the combined score threshold.

Abstract: A method of forming a semiconductor device includes forming a dummy gate structure across a fin protruding from a substrate, forming gate spacers on opposite sidewalls of the dummy gate structure, forming source/drain epitaxial structures on opposite sides of the dummy gate structure, forming a first interlayer dielectric (ILD) layer on the source/drain epitaxial structures and outer sidewalls of the gate spacers, replacing the dummy gate structure with a replacement gate structure, etching back the replacement gate structure to form a first recess between the gate spacers, forming a source/drain contact in the first ILD layer, and forming a second interlayer dielectric (ILD) layer to fill in the first recess between the gate spacers and over the source/drain contact.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first gate electrode disposed on the substrate and located in a first region of the semiconductor device. The semiconductor device also includes a first sidewall structure covering the first gate electrode. The semiconductor device further includes a protective layer disposed between the first gate electrode and the first sidewall structure. In addition, the semiconductor device includes a second gate electrode disposed on the substrate and located in a second region of the semiconductor device. The semiconductor device also includes a second sidewall structure covering a lateral surface of the second gate electrode.

Abstract: A communication system and an operation method thereof are provided. The transmitting device transmits the current data unit and the transmitted data verification information to the receiving device through the communication interface, and records the current data unit in an FIFO buffer. The receiving device counts the received data identification value by itself based on the current data unit received from the communication interface. The receiving device uses the received data identification value and the transmitted data verification information to check whether the current data unit received from the communication interface has errors. When the current data unit is in error, the receiving device returns an error flag to the transmitting device so that the transmitting device suspends the transmission of the new data unit, and transmits the buffered data unit recorded in the FIFO buffer to the receiving device through the communication interface.

Abstract: A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a semiconductor substrate, a first patterned conductive layer, a second patterned conductive layer, a first dielectric layer, a third patterned conductive layer, a fourth patterned conductive layer, a second dielectric layer, and an oxide structure. The first dielectric layer is disposed on the semiconductor substrate and surrounds the first patterned conductive layer and the second patterned conductive layer. The third patterned conductive layer is disposed on the first patterned conductive layer. The fourth patterned conductive layer is disposed on the second patterned conductive layer. The second dielectric layer is disposed on the first dielectric layer. The oxide structure is in contact with the second dielectric layer, a side surface of the fourth patterned conductive layer, and a side surface of the third patterned conductive layer.

Abstract: An approach is provided in which the approach generates a parallel chart based on multiple records that includes a set of variable values corresponding to a set of variables. To generate the parallel chart, the approach arranges the set of variables on the parallel chart in a variable order based on at least one variable arrangement rule. The approach arranges an initial variable value order for each one of the set of variables, and computes a lucidity score based on the variable order and the initial variable value order of each of the set of variables. The lucidity score is a measurement of the clarity of the parallel chart. The approach adjusts the variable value order of at least one of the set of variables to increase the lucidity score and optimizes the clarity of the parallel chart based on the adjusted variable value order.

Abstract: A semiconductor device a method of forming the same are provided. A semiconductor device includes a gate stack over a substrate. A first dielectric layer is over the gate stack. The first dielectric layer includes a first material. A second dielectric layer is over the first dielectric layer. The second dielectric layer includes a second material different from the first material. A first conductive feature is adjacent the gate stack. A second conductive feature is over and in physical contact with a topmost surface of the first conductive feature. A bottommost surface of the second conductive feature is in physical contact with a topmost surface of the second dielectric layer.

Abstract: The present application discloses an array substrate and a display panel. The array substrate comprises a flexible substrate, a thin-film transistor layer, a planarization layer, and a pixel electrode layer, wherein the thin-film transistor layer comprises driving circuit units and metal wires, a groove is defined between adjacent driving circuit units, and a plurality of protrusions are formed at positions where the groove overlaps the metal wires. The array substrate according to the present application improves stability of the array substrate.

Abstract: A wavelength conversion device includes a disk, a wavelength conversion material, a light-transmitting counterweight ring, a first adhesive layer and at least one counterweight member. The disk has a central axis and rotates around the central axis as the rotation axis. The wavelength conversion material is arranged on the outer edge of the upper surface of the disk. The light-transmitting counterweight ring is arranged on the upper surface of the disk. The first adhesive layer is arranged between the light-transmitting counterweight ring and the disk. At least one counterweight member is disposed on one side of the light-transmitting counterweight ring away from the disk. The at least one counterweight member includes a weight and a photocured component covering the weight, and at least part of the photocured component is located between the weight and the light-transmitting counterweight ring. A projection device is also provided.

Abstract: An ultrasonic device is provided for use on a biological tissue, and includes a base assembly on which a vibrator is mounted, and an ultrasonic probe. The base assembly includes an annular base having at least two pairs of abutment protrusions for abutting against the biological tissue, and an installation base coaxially disposed on and rotatable relative to the annular base between two test positions. The installation base has a through hold in which the ultrasonic probe is inserted.