Abstract: A redistribution layer with a landing pad is formed over a substrate with one or more mesh holes extending through the landing pad. The mesh holes may be arranged in a circular shape, and a passivation layer may be formed over the landing pad and the mesh holes. An opening is formed through the passivation layer and an underbump metallization is formed in contact with an exposed portion of the landing pad and extends over the mesh holes. By utilizing the mesh holes, sidewall delamination and peeling that might otherwise occur may be reduced or eliminated.

Abstract: An embodiment is a structure including a first die having an active surface with a first center point, a molding compound at least laterally encapsulating the first die, and a first redistribution layer (RDL) including metallization patterns extending over the first die and the molding compound. A first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.

Abstract: A medical implant has a center axis and includes first and second flexible waved strands disposed around the center axis. The second flexible waved strand is in spatial communication with the first flexible waved strand to form a plurality of first unit shapes and a plurality of second unit shapes. Therein, the first unit shapes and the second unit shapes are staggered around the center axis. The first unit shapes are coupled to the second unit shapes to cause the first and second flexible waved strands to move substantially along the center axis. The first and second flexible waved strands together define a self-anchoring configuration in a radial direction perpendicular to the center axis so that a ratio of a von Mises stress to an axial displacement of the medical implant during an implant compression of the medical implant is greater than 0.1 and less than 30.

Abstract: A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.

Abstract: Disclosed is a differential amplifier including an input circuit, a detecting and controlling circuit, and an output circuit. The input circuit outputs input current to two output nodes according to the voltage of a differential input signal and the voltage of a bias node. The detecting and controlling circuit outputs compensative current to the two output nodes according to control bias voltage and the voltage of the bias node, in which the voltage of the bias node and the compensative current relate to the voltage of the differential input signal. The output circuit is coupled to the two output nodes and outputs a differential output signal according to the sum of the input current and the compensative current. Due to the detecting and controlling circuit outputting the compensative current, the differential amplifier prevents itself from entering a deadlock state even though the input current is insufficient or zero.

Abstract: Semiconductor devices and methods of forming are provided. A molding compound extends along sidewalls of a first die and a second die. A redistribution layer is formed over the first die, the second die, and the molding compound. The redistribution layer includes a conductor overlying a gap between the first die and the second die. The conductor is routed at a first angle over an edge of the first die. The first angle is measured with respect to a straight line that extends along a shortest between the first die and the second die, and the first angle is greater than 0.

Abstract: A telematics controller is programmed identify a location of the vehicle responsive to failure of a vehicle-originated data call to initiate packet-switched communications, and send, to a service delivery network configured to provide data services to the vehicle, a message specifying that circuit-switched communication but not packet-switched communication is available to the vehicle. A message is received, over a wide-area network from a vehicle, in response to a failed initiation of a packed-switched data connection over the wide-area network, indicating that packet-switched communications are unavailable at a current location of the vehicle. Failure zones are updated to indicate that the current location of the vehicle is a network location supporting circuit-switched communication but not packet-switched communication over the wide-area network.

Abstract: A sense amplifier for reading a via Read-Only Memory (Via-ROM) is provided. The sense amplifier includes a read circuit, an adaptive keeper circuit and a leakage monitor circuit. The read circuit is connected to the via-ROM. The adaptive keeper circuit is connected to the read circuit. The leakage monitor circuit is connected to the adaptive keeper circuit for forming a current mirror, such that the adaptive keeper circuit compensates a read voltage of a memory cell whose via is opened when a bit-line leakage is happened.

Abstract: A semiconductor package includes a semiconductor die and a connection structure. The semiconductor die is laterally encapsulated by an insulating encapsulant. The connection structure is disposed on the semiconductor die, the connection structure is electrically connected to the semiconductor die, and the connection structure includes at least one first via, first pad structures, second vias, a second pad structure and a conductive terminal. The at least one first via is disposed over and electrically connected to the semiconductor die. The first pad structures are disposed over the at least one first via, wherein the at least one first via contacts at least one of the first pad structures. The second vias are disposed over the first pad structures, wherein the second vias contact the first pad structures.

Abstract: A telematics controller is programmed to identify a location responsive to detecting a failed data call from a vehicle, and if the location is within a geographic boundary of a failure zone within a cellular tower region and a cause of the failure matches a recorded cause for the failure zone, initiate data throttling until the vehicle moved outside of the geographic boundary.

Abstract: An embodiment fin field-effect-transistor (finFET) includes a semiconductor fin comprising a channel region and a gate oxide on a sidewall and a top surface of the channel region. The gate oxide includes a thinnest portion having a first thickness and a thickest portion having a second thickness different than the first thickness. A difference between the first thickness and the second thickness is less than a maximum thickness variation, and the maximum thickness variation is in accordance with an operating voltage of the finFET.

Abstract: A semiconductor package includes a semiconductor die and a connection structure. The semiconductor die is laterally encapsulated by an insulating encapsulant. The connection structure is disposed on the semiconductor die, the connection structure is electrically connected to the semiconductor die, and the connection structure includes at least one first via, first pad structures, second vias, a second pad structure and a conductive terminal. The at least one first via is disposed over and electrically connected to the semiconductor die. The first pad structures are disposed over the at least one first via, wherein the at least one first via contacts at least one of the first pad structures. The second vias are disposed over the first pad structures, wherein the second vias contact the first pad structures.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided, in which the method includes the steps of forming a gate structure on a substrate, forming a spacer on a sidewall of the gate structure, forming two recesses adjacent to two sides of the spacer, performing a cleaning process to trim the spacer for forming a void between the spacer and the substrate, and forming two portions of an epitaxial layer in the two recesses. The semiconductor device preferably includes a cap layer on the two portions of the epitaxial layer as the cap layer includes a planar top surface and an inclined sidewall.

Abstract: Described herein are systems, methods, and software to enhance failover operations in a cloud computing environment. In one implementation, a method of operating a first service instance in a cloud computing environment includes obtaining a communication from a computing asset, wherein the communication comprises a first destination address. The method further provides replacing the first destination address with a second destination address in the communication, wherein the second destination address comprises a shared address for failover from a second service instance. After replacing the address, the method determines whether the communication is permitted based on the second destination address, and if permitted, processes the communication in accordance with a service executing on the service instance.

Abstract: An electronic product with a light emitting function is provided. The electronic product includes a supporting structure, a light emitting structure and a cavity. The light emitting structure is bonded on the supporting structure. The light emitting structure includes a film, a conductive circuit and a light emitting device. The conductive circuit is formed on the film. The conductive circuit is enclosed between the supporting structure and the film. The light emitting device is disposed on the conductive circuit. The cavity is formed between the supporting structure and the light emitting structure, and the light emitting device is received in the cavity.

Abstract: A manufacturing method of an electronic product is provided. The manufacturing method includes following steps. Firstly, a conductive circuit is formed on a film, wherein the conductive circuit is made of a conductive metal layer, the conductive metal layer is a metal foil and the conductive metal layer is patterned to form the conductive circuit. Then, an electronic element is disposed on the conductive circuit of the film, and the electronic element is electrically connected to the conductive circuit. Then, the film and a supporting structure are combined by an out-mold forming technology or an in-mold forming technology, such that the electronic element is wrapped between the film and the supporting structure.

Abstract: An embodiment is a structure including a first die having an active surface with a first center point, a molding compound at least laterally encapsulating the first die, and a first redistribution layer (RDL) including metallization patterns extending over the first die and the molding compound. A first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.

Abstract: A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

Abstract: The present disclosure relates a method of forming an integrated chip packaging device. In some embodiments, the method may be performed by forming a conductive trace on a surface of a packaging component. The conductive trace has an angled surface defining an undercut. A molding material is deposited over an entirety of the conductive trace and within the undercut. The molding material is removed from an upper surface of the conductive trace. The molding material has a sloped outermost sidewall after removing the molding material from the upper surface. A solder region is formed on the upper surface of the conductive trace.