Abstract: A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.

Abstract: A first UE receives a first Session Initiation Protocol (SIP) INVITE message requesting the first UE to place the RTT call on hold, during an ongoing Real-Time Text (RTT) call with a second UE. In response to the first SIP INVITE message, the first UE sends a first SIP 200 OK message to the second UE, and the first SIP 200 OK message indicates that the first UE is not allowed to send and receive media data. After sending the first SIP 200 OK message, the first UE receives a second SIP INVITE message requesting the first UE to resume the RTT call. In response to the second SIP INVITE message, the first UE sends a third SIP INVITE message to the second UE, and the third SIP INVITE message indicates that the first UE is allowed to send and receive media data.

Abstract: A semiconductor package includes a semiconductor die, a redistribution structure and connective terminals. The redistribution structure is disposed on the semiconductor die and includes a first metallization tier disposed in between a pair of dielectric layers. The first metallization tier includes routing conductive traces electrically connected to the semiconductor die and a shielding plate electrically insulated from the semiconductor die. The connective terminals include dummy connective terminals and active connective terminals. The dummy connective terminals are disposed on the redistribution structure and are electrically connected to the shielding plate. The active connective terminals are disposed on the redistribution structure and are electrically connected to the routing conductive traces. Vertical projections of the dummy connective terminals fall on the shielding plate.

Abstract: Techniques are described for joint encoding and decoding of information symbols. In one embodiment, a method for joint encoding includes, in part, obtaining a sequence of information symbols, generating a plurality of cyclic codewords each corresponding to a portion of the sequence of information symbols, jointly encoding the plurality of cyclic codewords to generate at least one combined codeword, and providing the combined codeword to a device. The at least one combined codeword may be generated through Galois Fourier Transform (GFT).

Abstract: The present disclosure provides a forward converter with secondary LCD connected in series to realize excitation energy transfer, comprising a forward converter main circuit and an energy transfer and transmission circuit. The forward converter main circuit includes a high-frequency transformer T, a switching tube S, a diode D1, a diode D2, an inductance L1, and a capacitor C1. The energy transfer and transmission circuit includes a diode D3, a capacitor C2, and an inductance L2. The circuit structure of the present disclosure has simple circuit structure and high reliability. And the reverse recovery problem of the diode could be eliminated by the soft switch-off or soft switch-on of the switching tube, which further reducing the loss of switching tube and diodes and improving the overall efficiency. In addition, the excitation energy could be transferred to the load side to improve the energy transmission efficiency.

Abstract: The present disclosure provides a forward converter with secondary LCD connected in parallel to realize forward and backward energy transmission, comprising a forward converter main circuit and an energy transfer and transmission circuit. The forward converter main circuit includes a high-frequency transformer T, a switching tube S, a diode D1, a diode D2, an inductance L1, and a capacitor C1. The energy transfer and transmission circuit includes a diode D3, a capacitor C2 and an inductance L2.

Abstract: A package structure and method for forming the same are provided. The package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.

Abstract: A structure including a wiring substrate, an interposer disposed on and electrically connected to the wiring substrate, a semiconductor die disposed on and electrically connected to the interposer, a first insulating encapsulation disposed on the interposer, a second insulating encapsulation disposed on the wiring substrate, and a lid is provided. The semiconductor die is laterally encapsulated by the first insulating encapsulation. The semiconductor die and the first insulating encapsulation are laterally encapsulated by the second insulating encapsulation. A top surface of the first insulating encapsulation is substantially leveled with a top surface of the second insulating encapsulation and a surface of the semiconductor die. The lid is disposed on the semiconductor die, the first insulating encapsulation and the second insulating encapsulation.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate, a die stack disposed over the substrate, a heat spreader disposed over the substrate and having a surface facing the substrate, and a thermal interface material (TIM) disposed between the die stack and the heat spreader. A bottommost die of the die stack includes a surface exposed from remaining dies of the die stack from a top view perspective; and the TIM is in contact with the exposed surface of the bottommost die and the surface of the heat spreader, and is in contact with a sidewall of at least one of the plurality of dies of the die stack.

Abstract: A foldable dip net includes a handle, a connector and a net rack, wherein the handle comprises a U-shaped support connected with a handle lever and an arm rest plate; the connector has a mounting base body and a lock structure, and a light-emitting unit is arranged in the mounting base body; the net rack is hinged to the mounting base body through a rotary pin, and a clamping groove is formed in the side wall of the rotary pin and is matched with the lock structure.

Abstract: A package structure includes a semiconductor die, a redistribution circuit structure, and conductive pads. The redistribution circuit structure is located on and electrically connected to the semiconductor die, the redistribution circuit structure includes a first contact pad having a first width and a second contact pad having a second width. The conductive pads are located on and electrically connected to the redistribution circuit structure through connecting to the first contact pad and the second contact pad, the redistribution circuit structure is located between the conductive pads and the semiconductor die. The first width of the first contact pad is less than a width of the conductive pads, and the second width of the second contact pad is substantially equal to or greater than the width of the conductive pads.

Abstract: A packaged semiconductor device and a method and apparatus for forming the same are disclosed. In an embodiment, a method includes bonding a device die to a first surface of a substrate; depositing an adhesive on the first surface of the substrate; depositing a thermal interface material on a surface of the device die opposite the substrate; placing a lid over the device die and the substrate, the lid contacting the adhesive and the thermal interface material; applying a clamping force to the lid and the substrate; and while applying the clamping force, curing the adhesive and the thermal interface material.

Abstract: A semiconductor package includes a circuit substrate, a die, a frame structure, a heat sink lid and conductive balls. The die is disposed on a front surface of the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the front surface of the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies. The conductive balls are disposed on the opposite surface of the circuit substrate and electrically connected with the die through the circuit substrate.

Abstract: A structure includes a bridge die. The bridge die includes a semiconductor substrate; and an interconnect structure over the semiconductor substrate. The interconnect structure includes dielectric layers and conductive lines in the dielectric layers, an encapsulant encapsulating the bridge die therein, and a redistribution structure over the bridge die. The redistribution structure includes redistribution lines therein. A first package component and a second package component are bonded to the redistribution lines. The first package component and the second package component are electrically interconnected through the redistribution lines and the bridge die.

Abstract: A method for fabricating semiconductor device includes the steps of providing a substrate having a first region and a second region, forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region, and forming a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure. Preferably, the first fin-shaped structure and the second fin-shaped structure comprise different radius of curvature and a center of curvature of the first fin-shaped structure is lower than a top surface of the STI and a center of curvature of the second fin-shaped structure is higher than the top surface of the STI.

Abstract: In an embodiment, a device includes: a die stack over and electrically connected to an interposer, the die stack including a topmost integrated circuit die including: a substrate having a front side and a back side opposite the front side, the front side of the substrate including an active surface; a dummy through substrate via (TSV) extending from the back side of the substrate at least partially into the substrate, the dummy TSV electrically isolated from the active surface; a thermal interface material over the topmost integrated circuit die; and a dummy connector in the thermal interface material, the thermal interface material surrounding the dummy connector, the dummy connector electrically isolated from the active surface of the topmost integrated circuit die.

Abstract: Disclosed is a differential amplifier including an input circuit, a detecting and controlling circuit, and an output circuit. The input circuit outputs input current to two output nodes according to the voltage of a differential input signal and the voltage of a bias node. The detecting and controlling circuit outputs compensative current to the two output nodes according to control bias voltage and the voltage of the bias node, in which the voltage of the bias node and the compensative current relate to the voltage of the differential input signal. The output circuit is coupled to the two output nodes and outputs a differential output signal according to the sum of the input current and the compensative current. Due to the detecting and controlling circuit outputting the compensative current, the differential amplifier prevents itself from entering a deadlock state even though the input current is insufficient or zero.

Abstract: In an embodiment, a device includes: an integrated circuit die; a redistribution structure over a front-side surface of the integrated circuit die; a socket over the redistribution structure; a mechanical brace over the socket, the mechanical brace having an opening exposing the socket, edge regions of the socket overlapping edge regions of the mechanical brace at the opening; a first standoff screw disposed in the edge regions of the mechanical brace, the first standoff screw physically contacting the socket, the first standoff screw extending a first distance between the socket and the mechanical brace; and a bolt extending through the mechanical brace and the redistribution structure.

Abstract: Techniques for providing flow meta data exchanges between network and security functions for a security service are disclosed. In some embodiments, a system/process/computer program product for providing flow meta data exchanges between network and security functions for a security service includes receiving a flow at a network gateway of a security service from a software-defined wide area network (SD-WAN) device; inspecting the flow to determine meta information associated with the flow; and communicating the meta information associated with the flow to the SD-WAN device.

Abstract: A package structure includes a first through via structure formed in a substrate and a semiconductor die formed below the first through via structure. The package structure further includes a conductive structure formed in a passivation layer over the substrate. The conductive structure includes a first via portion and a second via portion, the first via portion is directly over the first through via structure, and there is no conductive material directly below and in direct contact with the second via portion.