Abstract: A semiconductor device package includes a first substrate, an antenna, a support layer, a dielectric layer and a second substrate. The first substrate has a first surface and a second surface opposite to the first surface. The antenna element is disposed on the second surface of the first substrate. The support layer is disposed on the first surface of the first substrate and at the periphery of the first surface of the first substrate. The support layer has a first surface facing away from the first substrate. The dielectric layer is disposed on the first surface of the support layer and spaced apart from the first substrate. The dielectric layer is chemically bonded to the support layer. The second substrate is disposed on a first surface of the dielectric layer facing away from the support layer.

Abstract: A manufacturing method of a semiconductor device is provided in an embodiment of the present invention. The manufacturing method includes the following steps. A transistor is formed on a substrate. The transistor includes a plurality of semiconductor sheets and two source/drain structures. The semiconductor sheets are stacked in a vertical direction and separated from one another. Each of the semiconductor sheets includes two first doped layers and a second doped layer disposed between the two first doped layers in the vertical direction. A conductivity type of the second doped layer is complementary to a conductivity type of each of the two first doped layers. The two source/drain structures are disposed at two opposite sides of each of the semiconductor sheets in a horizontal direction respectively, and the two source/drain structures are connected with the semiconductor sheets.

Abstract: Various embodiments process semiconductor devices. In one embodiment, a release layer is applied to a handler. The release layer comprises at least one additive that adjusts a frequency of electro-magnetic radiation absorption property of the release layer. The additive comprises, for example, a 355 nm chemical absorber and/or chemical absorber for one of more wavelengths in a range comprising 600 nm to 740 nm. The at least one singulated semiconductor device is bonded to the handler. The at least one singulated semiconductor device is packaged while it is bonded to the handler. The release layer is ablated by irradiating the release layer through the handler with a laser. The at least one singulated semiconductor device is removed from the transparent handler after the release layer has been ablated.

Abstract: A method for assessing the risk of severe cutaneous adverse drug reactions (SCARs) induced by disease-modifying antirheumatic drugs is provided, wherein the severe cutaneous adverse drug reactions comprises but not being limited to: Stevens-Johnson Syndrome (SJS), toxic epidermal necrolysis (TEN) and drug rash with eosinophilia and systemic symptoms (DRESS). Also provided is a detection kit for assessing the risk of developing cutaneous adverse drug reactions in a subject, said kit comprising a reagent for determining specific HLA alleles and a use of the detection kit in assessing the risk of developing cutaneous adverse drug reactions in a subject.

Abstract: A method includes forming a dielectric layer on a semiconductor workpiece, forming a first patterned layer of a first dipole material on the dielectric layer, and performing a first thermal drive-in operation at a first temperature to form a diffusion feature in a first portion of the dielectric layer beneath the first patterned layer. The method also includes forming a second patterned layer of a second dipole material, where a first section of the second patterned layer is on the diffusion feature and a second patterned layer is offset from the diffusion feature. The method further includes performing a second thermal drive-in operation at a second temperature, where the second temperature is less than the first temperature. The method additionally includes forming a gate electrode layer on the dielectric layer.

Abstract: Provided is a semiconductor memory device including a substrate, an isolation structure, a first gate dielectric layer, a first conductive layer, a second gate dielectric layer, a second conductive layer, and a protective layer. The substrate has an array region and a periphery region. The isolation structure is disposed in the substrate between the array and periphery regions. The first gate dielectric layer is disposed on the substrate in the array region. The first conductive layer is disposed on the first gate dielectric layer. The second gate dielectric layer is disposed on the substrate in the periphery region. The second conductive layer is disposed on the second dielectric layer. The second conductive layer extends to cover a portion of a top surface of the isolation structure. The protective layer is disposed between the second conductive layer and the isolation structure.

Abstract: An apparatus includes a substrate stage configured to secure a substrate thereon and a motion mechanism configured to rotate the substrate stage. The substrate stage includes a plurality of holding pins for holding an edge of the substrate. Rotating the substrate stage causes a chemical solution dispensed on an upper surface of the substrate to spread outwardly toward the edge of the substrate. At least one of the plurality of holding pins includes at least one opening or at least one tapered side surface, or both, for guiding the chemical solution to flow off the substrate.

Abstract: The current disclosure describes techniques for individually selecting the number of channel strips for a device. The channel strips are selected by defining a three-dimensional active region that include a surface active area and a depth/height. Semiconductor strips in the active region are selected as channel strips. Semiconductor strips contained in the active region will be configured to be channel strips. Semiconductor strips not included in the active region are not selected as channel strips and are separated from source/drain structures by an auxiliary buffer layer.

Abstract: A stacked structure includes a lower structure and an upper structure. The lower structure includes at least one lower dielectric layer and at least one lower metal layer in contact with the lower dielectric layer. The upper structure includes at least one upper dielectric layer and at least one upper metal layer in contact with the upper dielectric layer. The upper dielectric layer includes a first upper dielectric layer attached to the lower structure. The first upper dielectric layer includes a first portion and a second portion. A difference between a thickness of the first portion and a thickness of the second portion is greater than a gap between a highest point of a top surface of the first upper dielectric layer and lowest point of the top surface of the first upper dielectric layer.

Abstract: The present disclosure provides a semiconductor device package. The semiconductor device package includes an antenna layer, a first circuit layer and a second circuit layer. The antenna layer has a first coefficient of thermal expansion (CTE). The first circuit layer is disposed over the antenna layer. The first circuit layer has a second CTE. The second circuit layer is disposed over the antenna layer. The second circuit layer has a third CTE. A difference between the first CTE and the second CTE is less than a difference between the first CTE and the third CTE.

Abstract: A lens driving apparatus includes a holder, a metal cover, a carrier, a sensing magnet, a printed circuit board, a position sensor, a coil and at least one driving magnet. The metal cover is coupled with the holder and has an opening. The carrier is assembled to a lens assembly having an optical axis, wherein the carrier is disposed in the metal cover and is movable along a direction parallel to the optical axis. The sensing magnet is coupled with the carrier. The printed circuit board is disposed near to one of the four lateral sides of the holder. The position sensor is disposed on the printed circuit board and corresponds to the sensing magnet. The coil is disposed on an outer surface of the carrier. One of the driving magnet is disposed in the metal cover and corresponds to the coil.

Abstract: A method for fabricating a nanowire transistor includes the steps of first forming a nanowire channel structure on a substrate, in which the nanowire channel structure includes first semiconductor layers and second semiconductor layers alternately disposed over one another. Next, a gate structure is formed on the nanowire channel structure and then a source/drain structure is formed adjacent to the gate structure, in which the source/drain structure is made of graphene.

Abstract: A wiring structure and a method for manufacturing the same are provided. The wiring structure includes a conductive structure and at least one conductive through via. The conductive structure includes a plurality of dielectric layers and a plurality of circuit layers in contact with the dielectric layers. The conductive through via extends through the conductive structure. The conductive through via is a monolithic structure, and includes a main portion and an extending portion protruding from the main portion.

Abstract: The present invention pertains to methods of coating antimicrobial peptides on the biomaterial and the biomaterial coated thereby. The coating solution described herein comprises one or more antimicrobial peptides (AMPs) dissolved in a buffer containing an anionic surfactant, wherein the AMPs are amphipathic and cationic.

Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, whe

Abstract: A camera module includes a metal yoke, a holder, a plastic barrel, a plurality of plastic lens elements and a plurality of metal conducting elements. The holder is connected to the metal yoke for forming an inner space. The plastic barrel is movably disposed in the inner space and includes at least one buffering part. The plastic lens elements are disposed in the plastic barrel. The metal conducting elements are at least one leaf spring and a wire element, wherein the metal conducting elements are connected to the plastic barrel. Before the at least one buffering part contacts a contacting part of the at least one leaf spring, there is a gap distance between the at least one buffering part and the contacting part of the at least one leaf spring.

Abstract: A substrate structure and a method for manufacturing the same are provided. The substrate structure includes a first conductive layer, a dielectric layer, a second conductive layer and a connection layer. The dielectric layer is disposed on the first conductive layer. The dielectric layer defines an opening exposing the first conductive layer. The second conductive layer is disposed on the dielectric layer. The connection layer extends from an upper surface of the first conductive layer to a lateral surface of the second conductive layer. A surface roughness of an upper surface of the second conductive layer ranges from about 0.5 ?m to about 1.25 ?m.

Abstract: A sound source tracking method adapted to an ongoing video conference comprising: obtaining a streaming signal of the video conference from an internet; performing a video conference procedure to obtain an audio signal from the streaming signal and send the audio signal to a speaker; performing an audio tracking procedure to obtain the audio signal outputted from the video conference procedure to the communication device and send the audio signal to a sound source tracking camera; playing the audio signal to generate a far-end sound; recording a field sound comprising at least one of the far-end sound and a local-end sound; and performing a comparing procedure to determine a shooting direction of the sound source tracking camera, wherein the shooting direction is adjusted so as not to shoot the speaker when a similarity of the far-end sound and the audio signal is greater than a threshold.