Abstract: An antenna box module comprising a circuit board and a connector module is provided. The circuit board has an antenna. The connector module comprises a first connector, a coaxial cable body and a second connector. The first connector comprises a first clip-locking portion and a first body. The first body has a tube shape and extends in a direction. The first clip-locking portion is disposed at the first body and an end of the first clip-locking portion is adapted for being elastically deformed perpendicularly to the direction. An end of the coaxial cable body passes through the first body of the first connector. The second connector comprises a second clip-locking portion and a second body. The second clip-locking portion is disposed at the second body and adapted for locking the first clip-locking portion of the first connector. The second body is disposed at the circuit board and electrically connected to the antenna. In addition, a connector module and a coaxial cable are also provided.

Abstract: One or more techniques or systems for mitigating pattern collapse are provided herein. For example, a semiconductor structure for mitigating pattern collapse is formed. In some embodiments, the semiconductor structure includes an extreme low-k (ELK) dielectric region associated with a via or a metal line. For example, a first metal line portion and a second metal line portion are associated with a first lateral location and a second lateral location, respectively. In some embodiments, the first portion is formed based on a first stage of patterning and the second portion is formed based on a second stage of patterning. In this manner, pattern collapse associated with the semiconductor structure is mitigated, for example.

Abstract: A method for assembling the electronic device is provided, including providing a band member, forming a buffer structure on the band member by overmolding, pulling the band member out of the buffer structure to form a channel in the buffer structure, providing a flexible circuit, and disposing the flexible circuit through the channel.

Abstract: Methods are disclosed herein for forming conductive patterns having small pitches. An exemplary method includes forming a metal line in a first dielectric layer. The metal line has a first dimension along a first direction and a second dimension along a second direction that is different than the first direction. The method includes forming a patterned mask layer having an opening that exposes a portion of the metal line along an entirety of the second dimension and etching the portion of the metal line exposed by the opening of the patterned mask layer until reaching the first dielectric layer. The metal line is thus separated into a first metal feature and a second metal feature. After removing the patterned mask layer, a barrier layer is deposited over exposed surfaces of the first metal feature and the second metal feature and a second dielectric layer is deposited over the barrier layer.

Abstract: In an embodiment, a method includes: forming a differential contact etch stop layer (CESL) having a first portion over a source/drain region and a second portion along a gate stack, the source/drain region being in a substrate, the gate stack being over the substrate proximate the source/drain region, a first thickness of the first portion being greater than a second thickness of the second portion; depositing a first interlayer dielectric (ILD) over the differential CESL; forming a source/drain contact opening in the first ILD; forming a contact spacer along sidewalls of the source/drain contact opening; after forming the contact spacer, extending the source/drain contact opening through the differential CESL; and forming a first source/drain contact in the extended source/drain contact opening, the first source/drain contact physically and electrically coupling the source/drain region, the contact spacer physically separating the first source/drain contact from the first ILD.

Abstract: A semiconductor device includes a substrate, first and second fins protruding from the substrate, and first and second source/drain (S/D) features over the first and second fins respectively. The semiconductor device further includes an isolation feature over the substrate and disposed between the first and second S/D features, and a dielectric layer disposed on sidewalls of the first and second S/D features and on sidewalls of the isolation feature. A top portion of the isolation feature extends above the dielectric layer.

Abstract: Provided is a package structure including a die; an electrically connecting structure having a die attach region and a peripheral region surrounding the die attach region, wherein the die is disposed on the electrically connecting structure within the die attach region; an insulating protrusion disposed in the peripheral region and extending in a thickness direction of the die; a conductive structure disposed on the electrically connecting structure and encapsulating the insulating protrusion, wherein the conductive structure is electrically coupled to the electrically connecting structure and the die; and a dielectric structure disposed on the electrically connecting structure and encapsulating the die and the conductive structure.

Abstract: The present invention relates to a manicure device including at least one sensor to make it easier for a user to know the working mode and operating conditions of the manicure device. Moreover, the manicure device of the invention can operate under automatic control in order to have its working mode and operating conditions adjusted or set, or to issue a notification signal, after the working mode and operating conditions of the manicure device are sensed; therefore, it is convenient for a user to use the manicure device.

Abstract: Methods of patterning a target material layer are provided herein. The method includes steps of positioning a semiconductor wafer having the target material layer thereon in an etch chamber and of providing a flow of etch gases into the etch chamber, the flow of etch gases etchant gas comprising a plurality of gases. The semiconductor wafer has a patterned hardmask feature formed from a compound on the target material layer. The method also includes steps of etching the target material layer using the patterned hardmask feature as a mask feature, wherein one of the gases chemically alters the patterned hardmask feature and at least one of the gases chemically repairs the patterned hardmask feature so that the patterned hardmask feature retains its dimensions during the etching. Associated semiconductor wafer are also provided herein.

Abstract: Semiconductor packages and methods of forming the same are disclosed. One of the semiconductor packages includes a first dielectric layer, a first conductive pattern and a barrier layer. The first conductive pattern is disposed in a second dielectric layer over the first dielectric layer. The barrier layer is disposed at an interface between the first conductive pattern and the second dielectric layer and an interface between the first dielectric layer and the second dielectric layer.

Abstract: The present invention provides a photocuring device, comprising a housing and an ultraviolet (UV) light module, wherein the housing comprises an electroluminescent layer and/or a touch layer and a control module connected to the electroluminescent layer and/or the touch layer by an electrical means. The photocuring device of the invention not only features a low material cost and low production cost, but also allows its display interface and/or operation interface to be provided at any position of the housing of the photocuring device, without limitations in size, shape, or angle. Furthermore, the photocuring device of the invention allows its display interface and/or operation interface to be simplified as needed to facilitate operation and viewing by a manicurist or one who is receiving a manicure.

Abstract: A microLED display includes a first main substrate, microLEDs disposed above the first main substrate, a first light blocking layer disposed above the first main substrate to define emission areas, a light guiding layer disposed in the emission areas, and a plurality of connecting structures disposed in the emission areas respectively and electrically connected with the microLEDs.

Abstract: A model-based method of inspecting a specimen for presence of one or more interferent, such as Hemolysis, Icterus, and/or Lipemia (HI L) is provided. The method includes generating a pixelated image of the specimen in a first color space, determining color components (e.g., an a-value and a b-value) for pixels in the pixelated image, classifying of the pixels as being either liquid or non-liquid, defining one or more liquid regions based upon the pixels classified as liquid, and determining a presence of one or more interferent within the one or more liquid regions. The liquid classification is based upon a liquid classification model. Pixel classification may be based on a trained multiclass classifier. Interference level for the one or more interferent may be provided. Testing apparatus adapted to carry out the method are described, as are other aspects.

Abstract: A semiconductor structure includes semiconductor fins disposed over a substrate, an epitaxial source/drain (S/D) feature disposed over the semiconductor fins, where a top surface portion of the epitaxial S/D feature includes two surfaces slanted downward toward each other at an angle, a silicide layer disposed conformally over the top portion of the epitaxial S/D feature, and an S/D contact disposed over the silicide layer, where a bottom portion of the S/D contact extends into the epitaxial S/D feature.

Abstract: Aspects of the present invention disclose a method for a two-node storage system. The method includes one or more processors creating a plurality of first logic unit groups in a first storage node of a storage system. The method further includes mapping each of the plurality of first logic unit groups to a number of storage slices from different storage devices in the first storage node. The method further creating a plurality of second logic unit groups in a second storage node of the storage system, by mirroring storage slices from a storage device in the first storage node to multiple storage devices in the second storage node. In response to identifying a failure of a first storage device in the first storage node, the method further includes recovering lost data based on data in the second storage node.

Abstract: A method and device for processing a packet are provided in this disclosure. According to an example of the method, an HTTPS packet is received from a user host, and a non-online user session entry matching the HTTPs packet is searched for according to a source IP address and a destination IP address of the HTTPS packet. In case that the non-online user session entry is found, a token is obtained from a first token bucket if determining that a user session corresponding to the non-online user session entry has no token, where the number of tokens in the first token bucket is set based on processing capability of a CPU of the access gateway device. When the token is successfully obtained, the HTTPS packet is sent to the CPU for processing. When the token has failed to be obtained, the HTTPS packet is abandoned.

Abstract: A package structure and a formation method of a package structure are provided. The method includes disposing a semiconductor die over a first surface of a redistribution structure. The method also includes forming a first protective layer to surround a portion of the semiconductor die. The method further includes disposing a device element over a second surface of the redistribution structure. The redistribution structure is between the device element and the semiconductor die. In addition, the method includes forming a second protective layer to surround a portion of the device element. The second protective layer is thicker than the first protective layer, and the second protective layer and the first protective layer have different coefficients of thermal expansion.

Abstract: A circuit arrangement for controlling a backlight source and an operation method are provided. The circuit arrangement includes a generator. The generator receives a sync signal and generates a pulse width modulation signal synchronous with the sync signal to control the backlight source. The sync signal indicates a frequency of a video including a series of image frames. The sync signal includes a sync period corresponding to a frame of the video. The pulse width modulation signal includes a first waveform pattern in a first sub-period of the sync period and a second waveform pattern in a second sub-period of the sync period. Each of the first waveform pattern and the second waveform pattern includes at least one active pulse. The first waveform pattern is substantially identical to the second waveform pattern.

Abstract: A vacuum suction apparatus includes a semiconductor substrate with a top portion having grooves and a bottom portion having through holes, wherein each said groove correspondingly connects with at least one said through hole, and the groove has a width greater than a width of the through hole; and a cover plate disposed on a top surface of the semiconductor substrate. At least one edge of the vacuum suction apparatus has a vacuum chamber, which connects with the grooves. In another embodiment, the cover plate is replaced with a vacuum cover disposed above the semiconductor substrate, wherein the vacuum cover and the semiconductor substrate construct a vacuum chamber.

Abstract: A device for providing electrons and its method of making. The device includes an optical fiber with a tip and a metallic arrangement arranged at the tip. The metallic arrangement is arranged to be excited by an energy source to emit electrons or electron beams.